Product Abstract: 8-Inch and 6-Inch N-Type SiC Wafer & Substrate – Dummy and Prime Grades
Our high-quality 8-inch and 6-inch N-type Silicon Carbide (SiC) wafers and substrates are precisely engineered to meet the rigorous demands of cutting-edge electronics and high-performance power device applications. These wafers offer a powerful combination of durability, electrical efficiency, and reliability, ensuring that they excel in environments where high power, high frequency, and extreme temperature conditions are essential. The exceptional properties of our SiC wafers make them the perfect choice for industry sectors that are rapidly evolving, such as electric vehicles, renewable energy, telecommunications, and high-power industrial electronics.
Available in Dummy Grade and Prime Grade options, our SiC wafers provide versatility for diverse application needs. Dummy Grade wafers offer a practical, cost-effective solution for testing and calibration, enabling manufacturers to validate processes and fine-tune equipment without sacrificing quality. Prime Grade wafers, on the other hand, are crafted for the most demanding applications, where ultra-low defect density, high uniformity, and pristine surface quality are paramount. These Prime Grade wafers ensure that each device manufactured meets exacting standards, enhancing yield rates and delivering reliable, high-performance components.
8inch 6inch N type SiC wafer‘s specification:
Size
6 Inch/8 inch
Conductivity
N-type
Dopant
Nitroger
Doping Calculation Method
No-NA
Concentration
Range
9E14-1E19/cm3
Tolerance
±12%
Uniformity
0.06
Thickness
Range
0.2–50 μm
Tolerance
±8%
Uniformity
0.04
Defect
Die yield
≥95%
Scratches
cumulative scratch length ≤150 mm
Edge chips
≤0.5 mm
Backside cleanliness
100% clean
Surface Roughness (20 × 20 μm)
≤0.5 nm
Key Benefits and Features of Our SiC Wafers:
Enhanced Thermal and Electrical Properties Silicon Carbide’s superior thermal conductivity and high breakdown electric field enable these wafers to operate efficiently in high-voltage and high-temperature applications, reducing energy loss and improving overall device performance. This makes them an ideal choice for power systems in electric vehicles, where efficient energy conversion and management are critical for extending battery life and driving range.
High Dielectric Strength and Low Defect Density Our Prime Grade SiC wafers are meticulously processed to achieve low defect densities, ensuring minimal disruptions in electric field uniformity and enhancing device durability and lifespan. Low defect density directly translates into improved performance consistency across each die, which is particularly beneficial for high-voltage applications in renewable energy systems, where device reliability under continuous load is essential.
Temperature Resilience and Longevity Our SiC wafers exhibit outstanding performance in high-temperature conditions, which is crucial for applications that involve continuous operation, such as industrial motor drives, energy conversion systems, and 5G base stations. This temperature resilience not only extends device life but also allows for compact device designs without additional cooling requirements, further reducing manufacturing and operational costs.
High Uniformity and Consistency in Doping and Thickness Each wafer undergoes stringent quality control to ensure uniform doping levels and precise thickness across its surface, meeting the exact specifications required for high-frequency and high-power electronic devices. Consistent doping and thickness ensure reliable current conduction and heat dissipation, allowing for smooth device integration, especially in applications like RF devices in telecommunications where signal clarity and stability are critical.
Surface Quality and Low Surface Roughness Surface roughness and overall wafer cleanliness play an essential role in device performance and yield. Our wafers feature a smooth, defect-minimized surface with low surface roughness, enhancing their suitability for precision bonding and further processing. This quality also enables higher die yields, as reduced surface defects minimize the likelihood of device failure, saving manufacturers both time and resources in the production process.
Versatility in Dummy and Prime Grades
Dummy Grade: Provides an affordable solution for testing, process calibration, and equipment alignment without compromising essential material properties, helping manufacturers optimize and refine their production workflows.
Prime Grade: Delivers exceptional performance for high-stakes applications requiring consistent quality and minimal defects, ensuring that each device meets the high standards required in industries such as automotive, aerospace, and telecommunications.
Applications Across High-Demand Industries
Electric Vehicles (EVs) In the EV sector, SiC wafers are indispensable in power inverters and converters, where efficient power management is critical for extending battery life and enhancing overall vehicle performance. Prime Grade SiC wafers ensure that EV manufacturers can rely on durable, high-performing components capable of handling extreme currents and voltages.
Renewable Energy Systems Renewable energy systems, including solar inverters, wind power converters, and energy storage solutions, demand durable components that perform reliably under variable loads. Our high-performance SiC wafers support stable, efficient power conversion, directly contributing to the reliability and efficiency of green energy systems.
Telecommunications and 5G In telecommunications, especially in 5G infrastructure, devices must operate at high frequencies with minimal signal loss. Our SiC wafers are optimized for high-frequency applications, enabling stable signal processing and transmission, reducing interference, and ensuring robust performance across complex network architectures.
Industrial Power Electronics High-power industrial electronics, such as motor drives, power conversion systems, and industrial automation, require components that can withstand continuous operation under high stress. Our SiC wafers, with their thermal and electrical resilience, are ideal for these demanding environments, providing long-lasting and reliable performance even under harsh conditions.
Conclusion
With our 8-inch and 6-inch N-Type Silicon Carbide (SiC) wafers available in both Dummy and Prime Grades, we offer solutions that cater to diverse applications—from cost-effective test runs to high-precision, critical production lines. These SiC wafers stand out not only for their exceptional physical and electrical properties but also for their role in supporting the advancement of next-generation electronic devices and power solutions. Whether in automotive, renewable energy, telecommunications, or industrial electronics, our SiC wafers deliver unmatched quality, reliability, and performance, empowering our clients to push the boundaries of innovation and efficiency in their respective fields.