{"id":8072,"date":"2025-12-12T10:39:04","date_gmt":"2025-12-12T02:39:04","guid":{"rendered":"https:\/\/www.sic-wafers.com\/?p=8072"},"modified":"2025-12-12T10:39:40","modified_gmt":"2025-12-12T02:39:40","slug":"sapphire-crystal-structure-explained-a-plane-c-plane-r-plane-and-their-semiconductor-applications","status":"publish","type":"post","link":"https:\/\/www.sic-wafers.com\/cs\/sapphire-crystal-structure-explained-a-plane-c-plane-r-plane-and-their-semiconductor-applications\/","title":{"rendered":"Vysv\u011btlen\u00ed struktury krystalu saf\u00edru: A-plocha, C-plocha, R-plocha a jejich polovodi\u010dov\u00e9 aplikace."},"content":{"rendered":"
<\/div>\n

Saf\u00edr (\u03b1-Al\u2082O\u2083) je jedn\u00edm z nejpou\u017e\u00edvan\u011bj\u0161\u00edch substr\u00e1tov\u00fdch materi\u00e1l\u016f v polovodi\u010dov\u00e9m a optoelektronick\u00e9m pr\u016fmyslu. Jeho v\u00fdjime\u010dnost mechanick\u00e1 tvrdost, chemick\u00e1 stabilita a \u0161irok\u00fd p\u00e1sov\u00fd rozd\u00edl.<\/strong> je ide\u00e1ln\u00ed pro vysoce v\u00fdkonn\u00e1 za\u0159\u00edzen\u00ed.<\/p>\n\n\n\n

A\u010dkoli je saf\u00edr chemicky jednotn\u00fd, jeho krystalov\u00e1 struktura je anizotropn\u00ed<\/strong>, co\u017e znamen\u00e1, \u017ee fyzik\u00e1ln\u00ed a elektronick\u00e9 vlastnosti se li\u0161\u00ed v z\u00e1vislosti na orientaci krystalov\u00e9 roviny. Pochopen\u00ed t\u011bchto rovin -rovina A, rovina C, rovina R a dal\u0161\u00ed.<\/strong>-je z\u00e1sadn\u00ed pro v\u00fdb\u011br substr\u00e1t\u016f pro konkr\u00e9tn\u00ed polovodi\u010dov\u00e9 aplikace.<\/p>\n\n\n\n

Tento \u010dl\u00e1nek vysv\u011btluje krystalovou strukturu saf\u00edru, v\u00fdznam jednotliv\u00fdch rovin a vliv t\u011bchto rovin na v\u00fdkon polovodi\u010dov\u00fdch za\u0159\u00edzen\u00ed.<\/p>\n\n\n\n

\"\"<\/figure>\n\n\n\n

<\/p>\n\n\n\n

1. Z\u00e1kladn\u00ed krystalov\u00e1 struktura saf\u00edru<\/strong><\/h2>\n\n\n\n

Saf\u00edr je hexagon\u00e1ln\u00ed forma oxidu hlinit\u00e9ho (\u03b1-Al\u2082O\u2083)<\/strong>. Jeho atomy jsou uspo\u0159\u00e1d\u00e1ny do \u0161estihrann\u00e1 m\u0159\u00ed\u017eka s t\u011bsn\u00fdm uspo\u0159\u00e1d\u00e1n\u00edm<\/strong>, kde:<\/p>\n\n\n\n

    \n
  • Ionty hlin\u00edku (Al\u00b3\u207a) obsazuj\u00ed dv\u011b t\u0159etiny oktaedrick\u00fdch m\u00edst<\/strong><\/li>\n\n\n\n
  • Ionty kysl\u00edku (O\u00b2-) tvo\u0159\u00ed \u0161esti\u00faheln\u00edkov\u00e1 m\u0159\u00ed\u017eka<\/strong><\/li>\n\n\n\n
  • Ka\u017ed\u00fd ion hlin\u00edku je obklopen \u0161esti ionty kysl\u00edku (oktaedrick\u00e1 koordinace).<\/li>\n<\/ul>\n\n\n\n

    M\u0159\u00ed\u017ekov\u00e9 parametry saf\u00edru jsou p\u0159ibli\u017en\u011b:<\/p>\n\n\n\n

      \n
    • a = 4,76 \u00c5<\/strong><\/li>\n\n\n\n
    • c = 12,99 \u00c5<\/strong><\/li>\n<\/ul>\n\n\n\n

      Na str\u00e1nk\u00e1ch hexagon\u00e1ln\u00ed struktura<\/strong> je zodpov\u011bdn\u00fd za saf\u00edr anizotropn\u00ed mechanick\u00e9, optick\u00e9 a tepeln\u00e9 vlastnosti.<\/strong>.<\/p>\n\n\n\n

      2. K\u0159i\u0161\u0165\u00e1lov\u00e9 roviny v saf\u00edru<\/strong><\/h2>\n\n\n\n

      Krystaly saf\u00edru lze \u0159ezat pod\u00e9l r\u016fzn\u00fdch rovin, \u010d\u00edm\u017e vznikaj\u00ed desti\u010dky s odli\u0161nou orientac\u00ed povrchu. Nejb\u011b\u017en\u011bj\u0161\u00ed roviny jsou:<\/p>\n\n\n\n

      C-Plane (0001)<\/strong><\/h3>\n\n\n\n
        \n
      • Naz\u00fdv\u00e1 se tak\u00e9 baz\u00e1ln\u00ed rovina<\/strong><\/li>\n\n\n\n
      • Norm\u00e1la povrchu pod\u00e9l osa c<\/strong><\/li>\n\n\n\n
      • Nejpou\u017e\u00edvan\u011bj\u0161\u00ed rovina v polovodi\u010dov\u00fdch za\u0159\u00edzen\u00edch<\/li>\n\n\n\n
      • Vlastnosti:<\/strong>\n
          \n
        • Hladk\u00fd povrch atomov\u00e9 terasy<\/li>\n\n\n\n
        • Nejvy\u0161\u0161\u00ed symetrie<\/li>\n\n\n\n
        • Podporuje vertik\u00e1ln\u00ed epitaxn\u00ed r\u016fst<\/strong> GaN a dal\u0161\u00edch polovodi\u010d\u016f III-V<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n\n\n\n

          Letadlo A (11-20)<\/strong><\/h3>\n\n\n\n
            \n
          • Norm\u00e1la povrchu kolm\u00e1 k jedn\u00e9 z t\u011bchto ploch osy a<\/strong><\/li>\n\n\n\n
          • Naz\u00fdv\u00e1 se tak\u00e9 m-rovina<\/strong> v n\u011bkter\u00e9 literatu\u0159e<\/li>\n\n\n\n
          • Vlastnosti:<\/strong>\n
              \n
            • Sn\u00ed\u017een\u00e1 polarita ve srovn\u00e1n\u00ed s rovinou C<\/li>\n\n\n\n
            • Up\u0159ednost\u0148ov\u00e1no pro r\u016fst nepol\u00e1rn\u00edho GaN<\/strong><\/li>\n\n\n\n
            • Minimalizuje piezoelektrick\u00e1 pole v LED diod\u00e1ch<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n\n\n\n

              Letoun R (1-102)<\/strong><\/h3>\n\n\n\n
                \n
              • Povrch je \u0161ikm\u00e9 vzhledem k ose c<\/strong><\/li>\n\n\n\n
              • Naz\u00fdv\u00e1 se tak\u00e9 r-rovina<\/strong> nebo \u201cchybn\u011b sest\u0159\u00edhan\u00e9 letadlo\u201d<\/strong><\/li>\n\n\n\n
              • Vlastnosti:<\/strong>\n
                  \n
                • Umo\u017e\u0148uje semipol\u00e1rn\u00ed epitaxe<\/strong><\/li>\n\n\n\n
                • Sni\u017euje vnit\u0159n\u00ed elektrick\u00e1 pole v kvantov\u00fdch j\u00e1m\u00e1ch<\/li>\n\n\n\n
                • Zlep\u0161uje \u00fa\u010dinnost extrakce sv\u011btla u LED diod<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n\n\n\n

                  Ostatn\u00ed letadla<\/strong><\/h3>\n\n\n\n
                    \n
                  • Rovina M (10-10)<\/strong> a Plocha N (11-23)<\/strong> existuj\u00ed, ale v komer\u010dn\u00edch substr\u00e1tech se pou\u017e\u00edvaj\u00ed m\u00e9n\u011b \u010dasto.<\/li>\n<\/ul>\n\n\n\n

                    3. Pro\u010d je v polovodi\u010d\u00edch d\u016fle\u017eit\u00e1 krystalov\u00e1 rovina?<\/strong><\/h2>\n\n\n\n

                    Orientace roviny ovliv\u0148uje:<\/p>\n\n\n\n

                      \n
                    1. Kvalita epitaxi\u00e1ln\u00edho r\u016fstu<\/strong>\n
                        \n
                      • M\u0159\u00ed\u017ekov\u00fd nesoulad mezi saf\u00edrem a epitaxn\u00ed vrstvou z\u00e1vis\u00ed na rovin\u011b<\/li>\n\n\n\n
                      • Hustota dislokac\u00ed ve vrstv\u00e1ch GaN se m\u011bn\u00ed v z\u00e1vislosti na orientaci substr\u00e1tu<\/li>\n<\/ul>\n<\/li>\n\n\n\n
                      • Polariza\u010dn\u00ed efekty<\/strong>\n
                          \n
                        • r\u016fst GaN v rovin\u011b C je pol\u00e1rn\u00ed \u2192 siln\u00e1 vnit\u0159n\u00ed elektrick\u00e1 pole<\/li>\n\n\n\n
                        • rovina A a rovina R \u2192 nepol\u00e1rn\u00ed nebo semipol\u00e1rn\u00ed r\u016fst \u2192 redukovan\u00e1 pole<\/li>\n<\/ul>\n<\/li>\n\n\n\n
                        • V\u00fdkon za\u0159\u00edzen\u00ed<\/strong>\n
                            \n
                          • LED diody: sn\u00ed\u017een\u00ed kvantov\u011b omezen\u00e9ho Starkova efektu zvy\u0161uje \u00fa\u010dinnost<\/li>\n\n\n\n
                          • V\u00fdkonov\u00e1 za\u0159\u00edzen\u00ed: volba roviny ovliv\u0148uje tepelnou vodivost a povrchov\u00e9 nap\u011bt\u00ed<\/li>\n<\/ul>\n<\/li>\n<\/ol>\n\n\n\n

                            4. Praktick\u00e9 p\u0159\u00edklady<\/strong><\/h2>\n\n\n\n
                            Letadlo<\/th>Typick\u00e9 pou\u017eit\u00ed<\/th>Hlavn\u00ed v\u00fdhody<\/th><\/tr><\/thead>
                            Plocha C (0001)<\/strong><\/td>GaN LED, HEMT<\/td>Snadn\u00e1 epitaxe, \u0161irok\u00e1 dostupnost, vysok\u00e1 symetrie<\/td><\/tr>
                            Rovina A (11-20)<\/strong><\/td>Nepol\u00e1rn\u00ed LED diody<\/td>Sni\u017euje polariza\u010dn\u00ed pole, zvy\u0161uje \u00fa\u010dinnost<\/td><\/tr>
                            Rovina R (1-102)<\/strong><\/td>Semipol\u00e1rn\u00ed LED diody, vysoce v\u00fdkonn\u00e1 za\u0159\u00edzen\u00ed<\/td>Sni\u017euje vady, zlep\u0161uje extrakci sv\u011btla<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n
                            \n\n\n\n

                            5. Mechanick\u00e9 a optick\u00e9 aspekty<\/strong><\/h2>\n\n\n\n
                              \n
                            • Tvrdost:<\/strong> Saf\u00edr m\u00e1 Mohsova tvrdost 9<\/strong>, tak\u017ee je velmi odoln\u00fd proti po\u0161kr\u00e1b\u00e1n\u00ed p\u0159i manipulaci a v\u00fdrob\u011b.<\/li>\n\n\n\n
                            • Tepeln\u00e1 vodivost:<\/strong> M\u00edrn\u011b se li\u0161\u00ed podle orientace roviny, co\u017e je d\u016fle\u017eit\u00e9 pro v\u00fdkonn\u00e1 za\u0159\u00edzen\u00ed.<\/li>\n\n\n\n
                            • Transparentnost:<\/strong> Saf\u00edr je opticky \u010dir\u00fd od UV a\u017e bl\u00edzk\u00e9 infra\u010derven\u00e9 z\u00e1\u0159en\u00ed<\/strong>, a je tak ide\u00e1ln\u00ed pro optoelektronick\u00e9 aplikace.<\/li>\n<\/ul>\n\n\n\n

                              6. V\u00fdb\u011br spr\u00e1vn\u00e9 roviny<\/strong><\/h2>\n\n\n\n

                              In\u017een\u00fd\u0159i vyb\u00edraj\u00ed saf\u00edrov\u00e9 substr\u00e1ty na z\u00e1klad\u011b:<\/p>\n\n\n\n

                                \n
                              1. Typ za\u0159\u00edzen\u00ed:<\/strong> LED, laser, v\u00fdkonov\u00e9 za\u0159\u00edzen\u00ed, optick\u00fd senzor<\/li>\n\n\n\n
                              2. R\u016fstov\u00e1 technika:<\/strong> MOCVD, HVPE nebo LPE<\/li>\n\n\n\n
                              3. Po\u017eadovan\u00e9 elektrick\u00e9 a optick\u00e9 vlastnosti:<\/strong> Polarizace, hustota defekt\u016f, extrakce sv\u011btla<\/li>\n<\/ol>\n\n\n\n

                                Pravidlo:<\/strong><\/p>\n\n\n\n

                                  \n
                                • Plocha C \u2192 v\u00fdchoz\u00ed pro r\u016fst GaN pro v\u0161eobecn\u00e9 pou\u017eit\u00ed<\/li>\n\n\n\n
                                • Plocha A \u2192 nepol\u00e1rn\u00ed LED s vy\u0161\u0161\u00ed \u00fa\u010dinnost\u00ed<\/li>\n\n\n\n
                                • R-plocha \u2192 semipol\u00e1rn\u00ed, redukovan\u00e9 vnit\u0159n\u00ed elektrick\u00e9 pole<\/li>\n<\/ul>\n\n\n\n

                                  7. Z\u00e1v\u011br<\/strong><\/h2>\n\n\n\n

                                  Pochopen\u00ed krystalov\u00fdch rovin saf\u00edru je z\u00e1sadn\u00ed pro n\u00e1vrh polovodi\u010dov\u00fdch za\u0159\u00edzen\u00ed a optimalizace v\u00fdkonu<\/strong>.<\/p>\n\n\n\n

                                    \n
                                  • Na str\u00e1nk\u00e1ch Rovina C<\/strong> z\u016fst\u00e1v\u00e1 standardem pro vertik\u00e1ln\u00ed epitaxi.<\/li>\n\n\n\n
                                  • Rovina A a rovina R<\/strong> jsou nezbytn\u00e9 pro sn\u00ed\u017een\u00ed polariza\u010dn\u00edch efekt\u016f v LED diod\u00e1ch a dal\u0161\u00edch optoelektronick\u00fdch za\u0159\u00edzen\u00edch.<\/li>\n\n\n\n
                                  • V\u00fdb\u011br spr\u00e1vn\u00e9 orientace m\u016f\u017ee sn\u00ed\u017een\u00ed po\u010dtu z\u00e1vad, zv\u00fd\u0161en\u00ed \u00fa\u010dinnosti a zlep\u0161en\u00ed dlouhodob\u00e9 spolehlivosti za\u0159\u00edzen\u00ed.<\/strong>.<\/li>\n<\/ul>\n\n\n\n

                                    D\u00edky zvl\u00e1dnut\u00ed struktury saf\u00edrov\u00e9ho krystalu a v\u00fdb\u011bru rovin mohou in\u017een\u00fd\u0159i optimalizovat. vysoce v\u00fdkonn\u00e9, vysoce \u00fa\u010dinn\u00e9 polovodi\u010dov\u00e9 sou\u010d\u00e1stky nov\u00e9 generace.<\/strong>.<\/p>","protected":false},"excerpt":{"rendered":"

                                    Sapphire (\u03b1-Al\u2082O\u2083) is one of the most widely used substrate materials in the semiconductor and optoelectronics industries. Its exceptional mechanical hardness, chemical stability, and wide bandgap make it ideal for high-performance devices. Although sapphire is chemically uniform, its crystal structure is anisotropic, meaning that physical and electronic properties differ depending on the orientation of the […]<\/p>\n","protected":false},"author":2,"featured_media":8073,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"_uag_custom_page_level_css":"","footnotes":""},"categories":[27],"tags":[1447,1450,1446,1451,1050,1444,1448,1445,1219,1335,1449,1046,1202,1452,1453],"class_list":["post-8072","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-companynews","tag-a-plane","tag-c-plane","tag-crystal-structure","tag-dislocation-density","tag-gan","tag-hexagonal-lattice","tag-leds","tag-non-polar-growth","tag-optoelectronics","tag-power-devices","tag-r-plane","tag-sapphire","tag-semiconductor-applications","tag-semipolar-growth","tag-substrate-orientation"],"acf":[],"uagb_featured_image_src":{"full":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/Functional-crystallographic-planes-of-single-crystal-sapphire.webp",850,482,false],"thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/Functional-crystallographic-planes-of-single-crystal-sapphire-150x150.webp",150,150,true],"medium":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/Functional-crystallographic-planes-of-single-crystal-sapphire-300x170.webp",300,170,true],"medium_large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/Functional-crystallographic-planes-of-single-crystal-sapphire-768x436.webp",768,436,true],"large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/Functional-crystallographic-planes-of-single-crystal-sapphire.webp",800,454,false],"1536x1536":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/Functional-crystallographic-planes-of-single-crystal-sapphire.webp",850,482,false],"2048x2048":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/Functional-crystallographic-planes-of-single-crystal-sapphire.webp",850,482,false],"trp-custom-language-flag":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/Functional-crystallographic-planes-of-single-crystal-sapphire.webp",18,10,false],"woocommerce_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/Functional-crystallographic-planes-of-single-crystal-sapphire-300x300.webp",300,300,true],"woocommerce_single":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/Functional-crystallographic-planes-of-single-crystal-sapphire-600x340.webp",600,340,true],"woocommerce_gallery_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/Functional-crystallographic-planes-of-single-crystal-sapphire-100x100.webp",100,100,true]},"uagb_author_info":{"display_name":"lydia","author_link":"https:\/\/www.sic-wafers.com\/cs\/author\/lydia\/"},"uagb_comment_info":0,"uagb_excerpt":"Sapphire (\u03b1-Al\u2082O\u2083) is one of the most widely used substrate materials in the semiconductor and optoelectronics industries. Its exceptional mechanical hardness, chemical stability, and wide bandgap make it ideal for high-performance devices. Although sapphire is chemically uniform, its crystal structure is anisotropic, meaning that physical and electronic properties differ depending on the orientation of the…","_links":{"self":[{"href":"https:\/\/www.sic-wafers.com\/cs\/wp-json\/wp\/v2\/posts\/8072","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.sic-wafers.com\/cs\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.sic-wafers.com\/cs\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/cs\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/cs\/wp-json\/wp\/v2\/comments?post=8072"}],"version-history":[{"count":1,"href":"https:\/\/www.sic-wafers.com\/cs\/wp-json\/wp\/v2\/posts\/8072\/revisions"}],"predecessor-version":[{"id":8074,"href":"https:\/\/www.sic-wafers.com\/cs\/wp-json\/wp\/v2\/posts\/8072\/revisions\/8074"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/cs\/wp-json\/wp\/v2\/media\/8073"}],"wp:attachment":[{"href":"https:\/\/www.sic-wafers.com\/cs\/wp-json\/wp\/v2\/media?parent=8072"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/cs\/wp-json\/wp\/v2\/categories?post=8072"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/cs\/wp-json\/wp\/v2\/tags?post=8072"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}