{"id":8734,"date":"2026-03-09T16:54:02","date_gmt":"2026-03-09T08:54:02","guid":{"rendered":""},"modified":"2026-03-09T16:55:08","modified_gmt":"2026-03-09T08:55:08","slug":"high-purity-sic-crystal-growth-precision-manufacturing-standards","status":"publish","type":"post","link":"https:\/\/www.sic-wafers.com\/cs\/high-purity-sic-crystal-growth-precision-manufacturing-standards\/","title":{"rendered":"R\u016fst krystal\u016f SiC vysok\u00e9 \u010distoty: P\u0159esn\u00e9 v\u00fdrobn\u00ed standardy"},"content":{"rendered":"
<\/div>\n

Karbid k\u0159em\u00edku se stal jedn\u00edm z nejd\u016fle\u017eit\u011bj\u0161\u00edch \u0161irokop\u00e1smov\u00fdch polovodi\u010dov\u00fdch materi\u00e1l\u016f v modern\u00ed v\u00fdkonov\u00e9 elektronice a vysokoteplotn\u00edch aplikac\u00edch. Ve srovn\u00e1n\u00ed s b\u011b\u017en\u00fdmi polovodi\u010dov\u00fdmi materi\u00e1ly, jako je k\u0159em\u00edk, nab\u00edz\u00ed SiC vynikaj\u00edc\u00ed elektrick\u00e9, tepeln\u00e9 a mechanick\u00e9 vlastnosti, co\u017e umo\u017e\u0148uje v\u00fdvoj vysoce \u00fa\u010dinn\u00fdch za\u0159\u00edzen\u00ed pro elektromobily, syst\u00e9my obnoviteln\u00e9 energie a vysokofrekven\u010dn\u00ed v\u00fdkonovou elektroniku.<\/p>\n\n\n\n

V\u00fdroba vysoce \u010dist\u00fdch krystal\u016f SiC vhodn\u00fdch pro polovodi\u010dov\u00e9 sou\u010d\u00e1stky je v\u0161ak velmi n\u00e1ro\u010dn\u00e1. R\u016fst krystal\u016f vy\u017eaduje p\u0159\u00edsnou kontrolu teploty, tlaku, ne\u010distot a tvorby defekt\u016f. V d\u016fsledku toho se p\u0159esn\u00e9 v\u00fdrobn\u00ed standardy staly kl\u00ed\u010dov\u00fdm faktorem pro zaji\u0161t\u011bn\u00ed kvality, spolehlivosti a \u0161k\u00e1lovatelnosti desti\u010dek SiC.<\/p>\n\n\n\n

Tento \u010dl\u00e1nek poskytuje p\u0159ehled o vysoce \u010dist\u00fd SiC<\/a> technologie r\u016fstu krystal\u016f a p\u0159esn\u00e9 v\u00fdrobn\u00ed standardy, kter\u00fdmi se \u0159\u00edd\u00ed v\u00fdroba polovodi\u010dov\u00fdch substr\u00e1t\u016f SiC.<\/p>\n\n\n\n

\"\"<\/figure>\n\n\n\n

Pro\u010d je d\u016fle\u017eit\u00e1 vysok\u00e1 \u010distota krystal\u016f SiC<\/h2>\n\n\n\n

V\u00fdkonnost v\u00fdkonov\u00fdch za\u0159\u00edzen\u00ed SiC do zna\u010dn\u00e9 m\u00edry z\u00e1vis\u00ed na kvalit\u011b podkladov\u00e9ho krystalov\u00e9ho substr\u00e1tu. I mal\u00e9 nedokonalosti ve struktu\u0159e krystalu mohou v\u00fdznamn\u011b ovlivnit \u00fa\u010dinnost a spolehlivost za\u0159\u00edzen\u00ed.<\/p>\n\n\n\n

Mezi kl\u00ed\u010dov\u00e9 po\u017eadavky na krystaly SiC pro polovodi\u010de pat\u0159\u00ed:<\/p>\n\n\n\n

Parametr<\/th>Typick\u00fd po\u017eadavek<\/th><\/tr><\/thead>
Chemick\u00e1 \u010distota<\/td>\u2265 99,9999% (6N)<\/td><\/tr>
Hustota mikrotrubi\u010dek<\/td>< 1 cm-\u00b2<\/td><\/tr>
Hustota dislokace<\/td>< 10\u2074 cm-\u00b2<\/td><\/tr>
Pr\u016fm\u011br desti\u010dky<\/td>100 mm - 200 mm (4-8 palc\u016f)<\/td><\/tr>
Drsnost povrchu<\/td>< 0,5 nm (po le\u0161t\u011bn\u00ed)<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

Krystaly SiC s vysokou \u010distotou umo\u017e\u0148uj\u00ed v\u00fdrobc\u016fm vyr\u00e1b\u011bt pokro\u010dil\u00e1 za\u0159\u00edzen\u00ed, jako jsou:<\/p>\n\n\n\n

    \n
  • SiC MOSFETy<\/li>\n\n\n\n
  • Schottkyho bari\u00e9rov\u00e9 diody<\/li>\n\n\n\n
  • Vysokoteplotn\u00ed senzory<\/li>\n\n\n\n
  • RF a mikrovlnn\u00e9 komponenty<\/li>\n<\/ul>\n\n\n\n

    Tato za\u0159\u00edzen\u00ed maj\u00ed z\u00e1sadn\u00ed v\u00fdznam pro zlep\u0161en\u00ed \u00fa\u010dinnosti p\u0159em\u011bny energie v modern\u00ed elektronice.<\/p>\n\n\n\n

    Metoda fyzik\u00e1ln\u00edho transportu par (PVT)<\/h2>\n\n\n\n

    Nejpou\u017e\u00edvan\u011bj\u0161\u00ed metodou pro p\u011bstov\u00e1n\u00ed objemov\u00fdch krystal\u016f SiC je tzv. Fyzik\u00e1ln\u00ed transport par (PVT)<\/strong> technika, zn\u00e1m\u00e1 tak\u00e9 jako sublima\u010dn\u00ed metoda<\/strong>.<\/p>\n\n\n\n

    Z\u00e1kladn\u00ed proces<\/h3>\n\n\n\n

    V procesu PVT:<\/p>\n\n\n\n

      \n
    1. Pr\u00e1\u0161ek SiC vysok\u00e9 \u010distoty se um\u00edst\u00ed na dno grafitov\u00e9ho kel\u00edmku.<\/li>\n\n\n\n
    2. V horn\u00ed \u010d\u00e1sti kel\u00edmku je upevn\u011bn krystal se semeny.<\/li>\n\n\n\n
    3. Syst\u00e9m se zah\u0159\u00edv\u00e1 na 2000-2400 \u00b0C<\/strong> v inertn\u00ed atmosf\u00e9\u0159e, obvykle argonu.<\/li>\n\n\n\n
    4. Pr\u00e1\u0161ek SiC sublimuje na plynn\u00e9 l\u00e1tky.<\/li>\n\n\n\n
    5. P\u00e1ry stoupaj\u00ed vzh\u016fru a rekrystalizuj\u00ed na seed krystalu, \u010d\u00edm\u017e vznik\u00e1 objemov\u00fd ingot SiC.<\/li>\n<\/ol>\n\n\n\n

      Tento proces umo\u017e\u0148uje \u0159\u00edzen\u00fd r\u016fst velk\u00fdch monokrystal\u016f p\u0159i zachov\u00e1n\u00ed pot\u0159ebn\u00e9 \u00farovn\u011b \u010distoty pro polovodi\u010dov\u00e9 aplikace.<\/p>\n\n\n\n

      Hlavn\u00ed v\u00fdhody<\/h3>\n\n\n\n
        \n
      • Vysok\u00e1 krystalov\u00e1 \u010distota<\/li>\n\n\n\n
      • Relativn\u011b stabiln\u00ed r\u016fstov\u00e9 prost\u0159ed\u00ed<\/li>\n\n\n\n
      • \u0160k\u00e1lovatelnost na v\u011bt\u0161\u00ed pr\u016fm\u011bry desti\u010dek<\/li>\n\n\n\n
      • Kompatibiln\u00ed s pr\u016fmyslovou v\u00fdrobou<\/li>\n<\/ul>\n\n\n\n

        Navzdory t\u011bmto v\u00fdhod\u00e1m vy\u017eaduje udr\u017een\u00ed st\u00e1l\u00e9 kvality krystal\u016f p\u0159\u00edsnou v\u00fdrobn\u00ed kontrolu.<\/p>\n\n\n\n

        P\u0159esn\u00e9 v\u00fdrobn\u00ed standardy p\u0159i r\u016fstu krystal\u016f SiC<\/h2>\n\n\n\n

        Modern\u00ed r\u016fst krystal\u016f SiC se op\u00edr\u00e1 o kombinaci materi\u00e1lov\u00e9ho in\u017een\u00fdrstv\u00ed, tepeln\u00e9ho \u0159\u00edzen\u00ed a monitorov\u00e1n\u00ed procesu. B\u011bhem v\u00fdroby je t\u0159eba dodr\u017eovat n\u011bkolik p\u0159esn\u00fdch norem.<\/p>\n\n\n\n

        1. Suroviny s velmi vysokou \u010distotou<\/h3>\n\n\n\n

        Ne\u010distoty, jako je hlin\u00edk, b\u00f3r a dus\u00edk, mohou v\u00fdrazn\u011b zm\u011bnit elektrick\u00e9 vlastnosti SiC. Proto mus\u00ed suroviny pou\u017e\u00edvan\u00e9 p\u0159i r\u016fstu krystal\u016f spl\u0148ovat mimo\u0159\u00e1dn\u011b p\u0159\u00edsn\u00e9 po\u017eadavky na \u010distotu.<\/p>\n\n\n\n

        Typick\u00e9 normy zahrnuj\u00ed:<\/p>\n\n\n\n

          \n
        • Zdrojov\u00fd pr\u00e1\u0161ek SiC o \u010distot\u011b 6N nebo vy\u0161\u0161\u00ed<\/li>\n\n\n\n
        • Grafitov\u00e9 kel\u00edmky s vysokou \u010distotou<\/li>\n\n\n\n
        • Velmi \u010dist\u00e9 prost\u0159ed\u00ed pece<\/li>\n<\/ul>\n\n\n\n

          Kontrola kontaminace je velmi d\u016fle\u017eit\u00e1, proto\u017ee i stopov\u00e9 ne\u010distoty mohou vn\u00e9st do krystalov\u00e9 m\u0159\u00ed\u017eky hlubok\u00e9 defekty.<\/p>\n\n\n\n

          2. \u0158\u00edzen\u00ed teplotn\u00edho pole<\/h3>\n\n\n\n

          K r\u016fstu krystal\u016f SiC doch\u00e1z\u00ed p\u0159i extr\u00e9mn\u011b vysok\u00fdch teplot\u00e1ch, tak\u017ee tepeln\u00e1 stabilita je jedn\u00edm z nejd\u016fle\u017eit\u011bj\u0161\u00edch parametr\u016f procesu.<\/p>\n\n\n\n

          P\u0159esn\u00e1 kontrola zahrnuje:<\/p>\n\n\n\n

            \n
          • Optimalizovan\u00e1 konstrukce izolace pece<\/li>\n\n\n\n
          • V\u00edcez\u00f3nov\u00e9 topn\u00e9 syst\u00e9my<\/li>\n\n\n\n
          • \u0158\u00edzen\u00e9 tepeln\u00e9 gradienty<\/li>\n<\/ul>\n\n\n\n

            Stabiln\u00ed teplotn\u00ed gradient zaji\u0161\u0165uje rovnom\u011brn\u00fd r\u016fst krystal\u016f a minimalizuje strukturn\u00ed defekty, jako jsou stohovac\u00ed poruchy a dislokace.<\/p>\n\n\n\n

            3. \u0158\u00edzen\u00ed hustoty defekt\u016f<\/h3>\n\n\n\n

            Jednou z hlavn\u00edch v\u00fdzev p\u0159i v\u00fdrob\u011b SiC je kontrola krystalov\u00fdch vad. Mezi b\u011b\u017en\u00e9 vady pat\u0159\u00ed:<\/p>\n\n\n\n

              \n
            • Mikrotrubi\u010dky<\/li>\n\n\n\n
            • Vyklouben\u00ed z\u00e1vitov\u00e9ho \u0161roubu<\/li>\n\n\n\n
            • Dislokace v baz\u00e1ln\u00ed rovin\u011b<\/li>\n\n\n\n
            • Poruchy stohov\u00e1n\u00ed<\/li>\n<\/ul>\n\n\n\n

              Vysp\u011bl\u00ed v\u00fdrobci uplat\u0148uj\u00ed n\u011bkolik strategi\u00ed ke sn\u00ed\u017een\u00ed hustoty defekt\u016f:<\/p>\n\n\n\n

                \n
              • V\u00fdb\u011br vysoce kvalitn\u00edch krystal\u016f semen<\/li>\n\n\n\n
              • Optimalizovan\u00e9 m\u00edry r\u016fstu<\/li>\n\n\n\n
              • Sledov\u00e1n\u00ed r\u016fstu v re\u00e1ln\u00e9m \u010dase<\/li>\n<\/ul>\n\n\n\n

                V posledn\u00edch dvou desetilet\u00edch se v\u00fdrazn\u011b sn\u00ed\u017eila hustota defekt\u016f, co\u017e umo\u017enilo komercializaci vysoce v\u00fdkonn\u00fdch SiC za\u0159\u00edzen\u00ed.<\/p>\n\n\n\n

                4. Pr\u016fm\u011br desti\u010dky a normy pro \u0161k\u00e1lov\u00e1n\u00ed<\/h3>\n\n\n\n

                Polovodi\u010dov\u00fd pr\u016fmysl neust\u00e1le usiluje o zv\u011bt\u0161ov\u00e1n\u00ed velikosti desti\u010dek, aby se zv\u00fd\u0161ila efektivita v\u00fdroby.<\/p>\n\n\n\n

                Sou\u010dasn\u00e9 pr\u016fmyslov\u00e9 normy zahrnuj\u00ed:<\/p>\n\n\n\n

                Velikost oplatky<\/th>Typick\u00e1 aplikace<\/th><\/tr><\/thead>
                4 palce (100 mm)<\/td>V\u00fdzkum a po\u010d\u00e1te\u010dn\u00ed v\u00fdroba za\u0159\u00edzen\u00ed<\/td><\/tr>
                6 palc\u016f (150 mm)<\/td>Hlavn\u00ed proud v\u00fdroby SiC za\u0159\u00edzen\u00ed<\/td><\/tr>
                8 palc\u016f (200 mm)<\/td>Velkos\u00e9riov\u00e1 v\u00fdroba nov\u00e9 generace<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

                \u0160k\u00e1lov\u00e1n\u00ed na osmipalcov\u00e9 desti\u010dky p\u0159edstavuje dal\u0161\u00ed v\u00fdzvu p\u0159i udr\u017eov\u00e1n\u00ed rovnom\u011brn\u00e9 kvality krystal\u016f na cel\u00e9m substr\u00e1tu.<\/p>\n\n\n\n

                5. Zpracov\u00e1n\u00ed a le\u0161t\u011bn\u00ed povrchu<\/h3>\n\n\n\n

                Po r\u016fstu krystal\u016f proch\u00e1z\u00ed ingot SiC n\u011bkolika kroky zpracov\u00e1n\u00ed:<\/p>\n\n\n\n

                  \n
                1. M\u011b\u0159en\u00ed orientace krystal\u016f<\/li>\n\n\n\n
                2. \u0158ez\u00e1n\u00ed dr\u00e1tovou pilou<\/li>\n\n\n\n
                3. Lapov\u00e1n\u00ed<\/li>\n\n\n\n
                4. Chemicko-mechanick\u00e9 le\u0161t\u011bn\u00ed (CMP)<\/li>\n<\/ol>\n\n\n\n

                  Tyto procesy zaji\u0161\u0165uj\u00ed, \u017ee fin\u00e1ln\u00ed desti\u010dka spl\u0148uje p\u0159\u00edsn\u00e9 normy pro povrch polovodi\u010d\u016f, v\u010detn\u011b hladkosti na atom\u00e1rn\u00ed \u00farovni a minim\u00e1ln\u00edho po\u0161kozen\u00ed pod povrchem.<\/p>\n\n\n\n

                  Budouc\u00ed trendy ve v\u00fdrob\u011b SiC krystal\u016f<\/h2>\n\n\n\n

                  S rostouc\u00ed celosv\u011btovou popt\u00e1vkou po energeticky \u00fasporn\u00e9 elektronice se v\u00fdroba krystal\u016f SiC vyv\u00edj\u00ed v n\u011bkolika kl\u00ed\u010dov\u00fdch sm\u011brech.<\/p>\n\n\n\n

                  V\u00fdroba v\u011bt\u0161\u00edch oplatek<\/h3>\n\n\n\n

                  O\u010dek\u00e1v\u00e1 se, \u017ee p\u0159echod z 6palcov\u00fdch na 8palcov\u00e9 desti\u010dky v\u00fdrazn\u011b sn\u00ed\u017e\u00ed v\u00fdrobn\u00ed n\u00e1klady za\u0159\u00edzen\u00ed.<\/p>\n\n\n\n

                  Pokro\u010dil\u00e9 sledov\u00e1n\u00ed r\u016fstu<\/h3>\n\n\n\n

                  Nov\u00e9 technologie, jako nap\u0159. optick\u00e9 monitorov\u00e1n\u00ed in-situ<\/strong> a \u0158\u00edzen\u00ed pece s pomoc\u00ed um\u011bl\u00e9 inteligence<\/strong> zlep\u0161uj\u00ed stabilitu r\u016fstu a v\u00fdnosy.<\/p>\n\n\n\n

                  Bezchybn\u00fd v\u00fdvoj krystal\u016f<\/h3>\n\n\n\n

                  V\u00fdzkumn\u00e9 \u00fasil\u00ed se zam\u011b\u0159uje na v\u00fdrobu substr\u00e1t\u016f SiC s t\u00e9m\u011b\u0159 nulov\u00fdmi defekty, co\u017e by d\u00e1le zv\u00fd\u0161ilo v\u00fdkon a spolehlivost za\u0159\u00edzen\u00ed.<\/p>\n\n\n\n

                  Z\u00e1v\u011br<\/h2>\n\n\n\n

                  R\u016fst vysoce \u010dist\u00fdch krystal\u016f SiC p\u0159edstavuje jeden z nejn\u00e1ro\u010dn\u011bj\u0161\u00edch proces\u016f v oblasti polovodi\u010dov\u00e9ho materi\u00e1lov\u00e9ho in\u017een\u00fdrstv\u00ed. D\u00edky pokro\u010dil\u00fdm r\u016fstov\u00fdm technik\u00e1m, jako je PVT, p\u0159\u00edsn\u00e9 \u010di\u0161t\u011bn\u00ed surovin a p\u0159esn\u00e1 tepeln\u00e1 kontrola, mohou v\u00fdrobci vyr\u00e1b\u011bt vysoce kvalitn\u00ed substr\u00e1ty SiC, kter\u00e9 umo\u017e\u0148uj\u00ed v\u00fdrobu v\u00fdkonov\u00e9 elektroniky nov\u00e9 generace.<\/p>\n\n\n\n

                  S t\u00edm, jak pr\u016fmysl sm\u011b\u0159uje k elektrifikaci a vy\u0161\u0161\u00ed energetick\u00e9 \u00fa\u010dinnosti, budou se standardy p\u0159esn\u00e9 v\u00fdroby krystal\u016f SiC d\u00e1le vyv\u00edjet. Zlep\u0161ov\u00e1n\u00ed velikosti desti\u010dek, kontrola defekt\u016f a automatizace proces\u016f budou hr\u00e1t kl\u00ed\u010dovou roli p\u0159i podpo\u0159e roz\u0161i\u0159uj\u00edc\u00edho se glob\u00e1ln\u00edho trhu se za\u0159\u00edzen\u00edmi na b\u00e1zi SiC.<\/p>","protected":false},"excerpt":{"rendered":"

                  Silicon Carbide has emerged as one of the most important wide-bandgap semiconductor materials in modern power electronics and high-temperature applications. Compared with conventional semiconductor materials such as Silicon, SiC offers superior electrical, thermal, and mechanical properties, enabling the development of high-efficiency devices for electric vehicles, renewable energy systems, and high-frequency power electronics. However, producing high-purity […]<\/p>\n","protected":false},"author":2,"featured_media":8735,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"_uag_custom_page_level_css":"","footnotes":""},"categories":[27,12],"tags":[1999,1998,2003,2000,1754,2002,1997,2001,1125],"class_list":["post-8734","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-companynews","category-news","tag-high-purity-sic","tag-pvt-crystal-growth","tag-sic-crystal-defects","tag-sic-semiconductor-substrates","tag-sic-wafer-manufacturing","tag-sic-wafer-production","tag-silicon-carbide-crystal-growth","tag-silicon-carbide-power-devices","tag-wide-bandgap-semiconductors"],"acf":[],"uagb_featured_image_src":{"full":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/03\/High-Purity-SiC-Crystal-Growth-Precision-Manufacturing-Standards-1.webp",712,281,false],"thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/03\/High-Purity-SiC-Crystal-Growth-Precision-Manufacturing-Standards-1-150x150.webp",150,150,true],"medium":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/03\/High-Purity-SiC-Crystal-Growth-Precision-Manufacturing-Standards-1-300x118.webp",300,118,true],"medium_large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/03\/High-Purity-SiC-Crystal-Growth-Precision-Manufacturing-Standards-1.webp",712,281,false],"large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/03\/High-Purity-SiC-Crystal-Growth-Precision-Manufacturing-Standards-1.webp",712,281,false],"1536x1536":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/03\/High-Purity-SiC-Crystal-Growth-Precision-Manufacturing-Standards-1.webp",712,281,false],"2048x2048":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/03\/High-Purity-SiC-Crystal-Growth-Precision-Manufacturing-Standards-1.webp",712,281,false],"trp-custom-language-flag":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/03\/High-Purity-SiC-Crystal-Growth-Precision-Manufacturing-Standards-1-18x7.webp",18,7,true],"woocommerce_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/03\/High-Purity-SiC-Crystal-Growth-Precision-Manufacturing-Standards-1-300x281.webp",300,281,true],"woocommerce_single":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/03\/High-Purity-SiC-Crystal-Growth-Precision-Manufacturing-Standards-1-600x237.webp",600,237,true],"woocommerce_gallery_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/03\/High-Purity-SiC-Crystal-Growth-Precision-Manufacturing-Standards-1-100x100.webp",100,100,true]},"uagb_author_info":{"display_name":"lydia","author_link":"https:\/\/www.sic-wafers.com\/cs\/author\/lydia\/"},"uagb_comment_info":0,"uagb_excerpt":"Silicon Carbide has emerged as one of the most important wide-bandgap semiconductor materials in modern power electronics and high-temperature applications. Compared with conventional semiconductor materials such as Silicon, SiC offers superior electrical, thermal, and mechanical properties, enabling the development of high-efficiency devices for electric vehicles, renewable energy systems, and high-frequency power electronics. However, producing high-purity…","_links":{"self":[{"href":"https:\/\/www.sic-wafers.com\/cs\/wp-json\/wp\/v2\/posts\/8734","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.sic-wafers.com\/cs\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.sic-wafers.com\/cs\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/cs\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/cs\/wp-json\/wp\/v2\/comments?post=8734"}],"version-history":[{"count":1,"href":"https:\/\/www.sic-wafers.com\/cs\/wp-json\/wp\/v2\/posts\/8734\/revisions"}],"predecessor-version":[{"id":8736,"href":"https:\/\/www.sic-wafers.com\/cs\/wp-json\/wp\/v2\/posts\/8734\/revisions\/8736"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/cs\/wp-json\/wp\/v2\/media\/8735"}],"wp:attachment":[{"href":"https:\/\/www.sic-wafers.com\/cs\/wp-json\/wp\/v2\/media?parent=8734"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/cs\/wp-json\/wp\/v2\/categories?post=8734"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/cs\/wp-json\/wp\/v2\/tags?post=8734"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}