{"id":8879,"date":"2026-05-11T13:55:50","date_gmt":"2026-05-11T05:55:50","guid":{"rendered":"https:\/\/www.sic-wafers.com\/?p=8879"},"modified":"2026-05-11T14:07:43","modified_gmt":"2026-05-11T06:07:43","slug":"silicon-carbide-sic-synthesis-properties-applications","status":"publish","type":"post","link":"https:\/\/www.sic-wafers.com\/es\/silicon-carbide-sic-synthesis-properties-applications\/","title":{"rendered":"Carburo de silicio (SiC): S\u00edntesis, propiedades, aplicaciones y procesos de fabricaci\u00f3n de componentes de SiC"},"content":{"rendered":"<div style=\"margin-top: 0px; margin-bottom: 0px;\" class=\"sharethis-inline-share-buttons\" ><\/div>\n<h1 class=\"wp-block-heading\">1. \u00bfQu\u00e9 es el carburo de silicio (SiC)?<\/h1>\n\n\n\n<p>El carburo de silicio (SiC), tambi\u00e9n conocido como carborundo, es un material no met\u00e1lico de alto rendimiento compuesto por silicio (Si) y carbono (C). Se utiliza ampliamente en:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Dispositivos semiconductores (materiales de banda ancha)<\/li>\n\n\n\n<li>Hornos industriales de alta temperatura<\/li>\n\n\n\n<li>Abrasivos y herramientas de corte<\/li>\n\n\n\n<li>Sistemas aeroespaciales y energ\u00e9ticos<\/li>\n<\/ul>\n\n\n\n<p>El SiC se considera un material avanzado de \u00faltima generaci\u00f3n por sus excepcionales propiedades t\u00e9rmicas, mec\u00e1nicas y el\u00e9ctricas.<\/p>\n\n\n\n<figure class=\"wp-block-image aligncenter size-large\"><img data-dominant-color=\"e1e2e2\" data-has-transparency=\"false\" style=\"--dominant-color: #e1e2e2;\" fetchpriority=\"high\" decoding=\"async\" width=\"1024\" height=\"683\" src=\"https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-SiC-Synthesis-Properties-Applications-and-Manufacturing-Processes-of-SiC-Components-1024x683.webp\" alt=\"\" class=\"wp-image-8880 not-transparent\" srcset=\"https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-SiC-Synthesis-Properties-Applications-and-Manufacturing-Processes-of-SiC-Components-1024x683.webp 1024w, https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-SiC-Synthesis-Properties-Applications-and-Manufacturing-Processes-of-SiC-Components-300x200.webp 300w, https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-SiC-Synthesis-Properties-Applications-and-Manufacturing-Processes-of-SiC-Components-768x512.webp 768w, https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-SiC-Synthesis-Properties-Applications-and-Manufacturing-Processes-of-SiC-Components-18x12.webp 18w, https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-SiC-Synthesis-Properties-Applications-and-Manufacturing-Processes-of-SiC-Components-600x400.webp 600w, https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-SiC-Synthesis-Properties-Applications-and-Manufacturing-Processes-of-SiC-Components.webp 1536w\" sizes=\"(max-width: 1024px) 100vw, 1024px\" \/><\/figure>\n\n\n\n<h1 class=\"wp-block-heading\">2. S\u00edntesis industrial del carburo de silicio<\/h1>\n\n\n\n<h2 class=\"wp-block-heading\">2.1 Proceso Acheson (m\u00e9todo de reducci\u00f3n carbot\u00e9rmica)<\/h2>\n\n\n\n<p>El m\u00e9todo industrial m\u00e1s utilizado para la producci\u00f3n de SiC es el proceso de reducci\u00f3n carbot\u00e9rmica a alta temperatura:<\/p>\n\n\n\n<p>SiO\u2082 + 3C \u2192 SiC + 2CO\u2191.<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">Materias primas:<\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Cuarzo (SiO\u2082): 52-54%<\/li>\n\n\n\n<li>Coque de petr\u00f3leo \/ carb\u00f3n: ~35%<\/li>\n\n\n\n<li>Astillas de madera: ~11%<\/li>\n\n\n\n<li>Sal industrial (NaCl): 1,5-4%<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\">Funci\u00f3n de cada material:<\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Cuarzo: fuente de silicio<\/li>\n\n\n\n<li>Carbono: agente reductor<\/li>\n\n\n\n<li>Virutas de madera: crean porosidad para la liberaci\u00f3n de gas<\/li>\n\n\n\n<li>Sal: eliminaci\u00f3n de impurezas (\u00f3xidos de Fe, Al)<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\">Condiciones del proceso:<\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Temperatura de reacci\u00f3n: 1400\u00b0C a 2200\u00b0C<\/li>\n\n\n\n<li>Zona de sinterizaci\u00f3n final: 1900-2200\u00b0C<\/li>\n\n\n\n<li>Subproducto: gran volumen de gas CO<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\">Forma del producto:<\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Bloque de SiC policristalino (requiere trituraci\u00f3n y clasificaci\u00f3n)<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">2.2 Dep\u00f3sito qu\u00edmico en fase vapor (CVD) para <a href=\"https:\/\/www.sic-wafers.com\/es\/product-category\/sic-wafer\/\">SiC de gran pureza<\/a><\/h2>\n\n\n\n<p>Para aplicaciones de gran pureza (especialmente SiC de grado semiconductor), se utiliza la deposici\u00f3n qu\u00edmica en fase vapor:<\/p>\n\n\n\n<p>6SiCl\u2084 + C\u2086H\u2086 + 12H\u2082 \u2192 6SiC + 24HCl<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">Ventajas:<\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Cristales de SiC de pureza ultra alta<\/li>\n\n\n\n<li>Estructura de deposici\u00f3n controlada<\/li>\n\n\n\n<li>Adecuado para aplicaciones electr\u00f3nicas y de semiconductores<\/li>\n<\/ul>\n\n\n\n<h1 class=\"wp-block-heading\">3. Estructura cristalina y propiedades f\u00edsicas del SiC<\/h1>\n\n\n\n<p>El carburo de silicio existe en m\u00faltiples estructuras cristalinas polim\u00f3rficas:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>\u03b2-SiC (estructura c\u00fabica, fase de baja temperatura)<\/li>\n\n\n\n<li>\u03b1-SiC (estructura hexagonal, fase de alta temperatura)<\/li>\n\n\n\n<li>M\u00e1s de 100 polit\u00edpos (fen\u00f3meno del polit\u00edpico)<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">Propiedades f\u00edsicas clave:<\/h2>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Densidad: 3,21 g\/cm\u00b3<\/li>\n\n\n\n<li>Punto de sublimaci\u00f3n: ~2600\u00b0C<\/li>\n\n\n\n<li>Dureza Mohs: 9,2<\/li>\n\n\n\n<li>Conductividad t\u00e9rmica: muy alta<\/li>\n\n\n\n<li>Estabilidad qu\u00edmica: excelente en medios \u00e1cidos<\/li>\n<\/ul>\n\n\n\n<h1 class=\"wp-block-heading\">4. Estabilidad qu\u00edmica y comportamiento a altas temperaturas<\/h1>\n\n\n\n<h2 class=\"wp-block-heading\">4.1 Reacci\u00f3n de oxidaci\u00f3n<\/h2>\n\n\n\n<p>El SiC reacciona con el ox\u00edgeno a alta temperatura:<\/p>\n\n\n\n<p>SiC + 2O\u2082 \u2192 SiO\u2082 + CO\u2082.<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">Comportamiento de oxidaci\u00f3n por rango de temperatura:<\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li>800-1140\u00b0C: capa de \u00f3xido porosa, protecci\u00f3n d\u00e9bil<\/li>\n\n\n\n<li>1300-1500\u00b0C: la densa capa protectora de SiO\u2082 mejora la resistencia.<\/li>\n\n\n\n<li>1500\u00b0C: la capa de \u00f3xido puede romperse, degradaci\u00f3n acelerada<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">4.2 Estabilidad t\u00e9rmica<\/h2>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Estable hasta 2600\u00b0C en atm\u00f3sferas inertes o reductoras<\/li>\n\n\n\n<li>Excelente resistencia al choque t\u00e9rmico<\/li>\n\n\n\n<li>Alta resistencia a la deformaci\u00f3n por fluencia<\/li>\n<\/ul>\n\n\n\n<h1 class=\"wp-block-heading\">5. Principales aplicaciones del carburo de silicio<\/h1>\n\n\n\n<h2 class=\"wp-block-heading\">5.1 Abrasivos y materiales abrasivos<\/h2>\n\n\n\n<p>El SiC se utiliza ampliamente en:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Muelas abrasivas<\/li>\n\n\n\n<li>Herramientas de corte<\/li>\n\n\n\n<li>Materiales de pulido de precisi\u00f3n<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\">Ventajas:<\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Dureza extremadamente alta<\/li>\n\n\n\n<li>Gran resistencia al desgaste<\/li>\n\n\n\n<li>Rendimiento de corte estable<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">5.2 Elementos calefactores (varillas calefactoras de SiC)<\/h2>\n\n\n\n<p>Las aplicaciones incluyen:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Hornos industriales<\/li>\n\n\n\n<li>Sistemas de calefacci\u00f3n por resistencia a alta temperatura<\/li>\n\n\n\n<li>Componentes de calefacci\u00f3n del horno<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\">Ventajas:<\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Resistencia a altas temperaturas<\/li>\n\n\n\n<li>Larga vida \u00fatil<\/li>\n\n\n\n<li>Rendimiento el\u00e9ctrico estable<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">5.3 Materiales refractarios y estructurales de alta temperatura<\/h2>\n\n\n\n<p>El SiC se utiliza ampliamente en las industrias metal\u00fargica y qu\u00edmica:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Revestimientos de hornos<\/li>\n\n\n\n<li>Crisoles<\/li>\n\n\n\n<li>Tuber\u00edas de alta temperatura<\/li>\n\n\n\n<li>Sistemas de transporte de metal fundido<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">5.4 Sistemas aeroespaciales y energ\u00e9ticos<\/h2>\n\n\n\n<p>Las aplicaciones incluyen:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Toberas de cohetes<\/li>\n\n\n\n<li>Componentes de turbinas de gas<\/li>\n\n\n\n<li>Piezas estructurales de alta temperatura<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">5.5 Semiconductores y aplicaciones electr\u00f3nicas (material de banda ancha)<\/h2>\n\n\n\n<p>El carburo de silicio es un <strong>material semiconductor de tercera generaci\u00f3n<\/strong> utilizado en:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Dispositivos electr\u00f3nicos de potencia<\/li>\n\n\n\n<li>Sistemas de conmutaci\u00f3n de alta tensi\u00f3n<\/li>\n\n\n\n<li>Veh\u00edculos el\u00e9ctricos (m\u00f3dulos de alimentaci\u00f3n EV)<\/li>\n\n\n\n<li>Electr\u00f3nica de alta temperatura<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\">Ventajas clave en semiconductores:<\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Amplia banda prohibida (~3,2 eV)<\/li>\n\n\n\n<li>Alta tensi\u00f3n de ruptura<\/li>\n\n\n\n<li>Alta conductividad t\u00e9rmica<\/li>\n\n\n\n<li>Baja p\u00e9rdida de energ\u00eda<\/li>\n<\/ul>\n\n\n\n<h1 class=\"wp-block-heading\">6. Procesos de fabricaci\u00f3n de componentes de carburo de silicio<\/h1>\n\n\n\n<h2 class=\"wp-block-heading\">6.1 Preparaci\u00f3n del polvo<\/h2>\n\n\n\n<p>Las materias primas t\u00edpicas son:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>\u03b1-SiC (part\u00edculas estructurales gruesas)<\/li>\n\n\n\n<li>\u03b2-SiC (part\u00edculas finas para densificaci\u00f3n)<\/li>\n<\/ul>\n\n\n\n<p>La ingenier\u00eda del polvo es fundamental para la densificaci\u00f3n final.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">6.2 M\u00e9todos de conformado<\/h2>\n\n\n\n<p>T\u00e9cnicas habituales de moldeado:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Prensado en seco (50-70 MPa)<\/li>\n\n\n\n<li>Prensado isost\u00e1tico<\/li>\n\n\n\n<li>Moldeo por extrusi\u00f3n<\/li>\n<\/ul>\n\n\n\n<p>Las carpetas utilizadas son:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Aglutinantes org\u00e1nicos (PVA, CMC)<\/li>\n\n\n\n<li>Ligantes sol-gel (soles de SiO\u2082, Al\u2082O\u2083).<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">6.3 Tecnolog\u00edas de sinterizaci\u00f3n<\/h2>\n\n\n\n<h3 class=\"wp-block-heading\">(1) SiC ligado por reacci\u00f3n (RB-SiC)<\/h3>\n\n\n\n<p>Proceso:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>El Si se infiltra en la preforma que contiene carbono<\/li>\n\n\n\n<li>Forma la fase de enlace \u03b2-SiC<\/li>\n<\/ul>\n\n\n\n<p>Ventajas:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Bajo coste<\/li>\n\n\n\n<li>Buena estabilidad dimensional<\/li>\n\n\n\n<li>Escalabilidad industrial<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\">(2) SiC prensado en caliente (HP-SiC)<\/h3>\n\n\n\n<p>Condiciones del proceso:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Temperatura: 1300-1500\u00b0C<\/li>\n\n\n\n<li>Presi\u00f3n: 70-90 MPa<\/li>\n<\/ul>\n\n\n\n<p>Ventajas:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Densidad cercana a la te\u00f3rica<\/li>\n\n\n\n<li>Alta resistencia mec\u00e1nica (380-500 MPa)<\/li>\n\n\n\n<li>Excelente resistencia al choque t\u00e9rmico<\/li>\n<\/ul>\n\n\n\n<p>Limitaciones:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Restricciones geom\u00e9tricas complejas<\/li>\n\n\n\n<li>Baja eficiencia de la producci\u00f3n<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">6.4 Sistemas de uni\u00f3n y aditivos<\/h2>\n\n\n\n<p>Para mejorar el rendimiento, se utilizan diferentes aglutinantes:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>SiC unido por \u00f3xido (rentable)<\/li>\n\n\n\n<li>SiC con nitruro de silicio (alta resistencia a la oxidaci\u00f3n)<\/li>\n\n\n\n<li>SiC ligado con oxinitruro de silicio (rendimiento equilibrado)<\/li>\n\n\n\n<li>SiC autoligado (alta pureza y resistencia)<\/li>\n<\/ul>\n\n\n\n<h1 class=\"wp-block-heading\">7. Ventajas y limitaciones del carburo de silicio<\/h1>\n\n\n\n<h2 class=\"wp-block-heading\">Ventajas:<\/h2>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Dureza extremadamente alta<\/li>\n\n\n\n<li>Excelente conductividad t\u00e9rmica<\/li>\n\n\n\n<li>Excelente estabilidad a altas temperaturas<\/li>\n\n\n\n<li>Gran resistencia qu\u00edmica<\/li>\n\n\n\n<li>Alta resistencia al choque t\u00e9rmico<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">Limitaciones:<\/h2>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Comportamiento de sinterizaci\u00f3n dif\u00edcil<\/li>\n\n\n\n<li>Densificaci\u00f3n limitada sin aditivos<\/li>\n\n\n\n<li>Sensibilidad a la oxidaci\u00f3n en condiciones extremas<\/li>\n\n\n\n<li>Elevado coste de fabricaci\u00f3n de los grados avanzados<\/li>\n<\/ul>\n\n\n\n<h1 class=\"wp-block-heading\">8. Tendencias de desarrollo (perspectivas para 2026)<\/h1>\n\n\n\n<p>La industria del carburo de silicio evoluciona r\u00e1pidamente hacia:<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">8.1 Materiales de SiC de grado semiconductor<\/h2>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Obleas electr\u00f3nicas de gran pureza<\/li>\n\n\n\n<li>Crecimiento cristalino controlado por defectos<\/li>\n\n\n\n<li>Optimizaci\u00f3n de la capa epitaxial<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">8.2 Obleas de SiC de gran di\u00e1metro<\/h2>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Ampliaci\u00f3n a obleas de 6 y 8 pulgadas<\/li>\n\n\n\n<li>Mayor eficacia de la producci\u00f3n<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">8.3 Expansi\u00f3n de la electr\u00f3nica de potencia<\/h2>\n\n\n\n<ul class=\"wp-block-list\">\n<li>M\u00f3dulos de alimentaci\u00f3n para VE<\/li>\n\n\n\n<li>Sistemas de energ\u00eda renovable<\/li>\n\n\n\n<li>Inversores de alta eficiencia<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">8.4 Ingenier\u00eda cer\u00e1mica avanzada<\/h2>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Integraci\u00f3n estructural y funcional<\/li>\n\n\n\n<li>Sistemas compuestos de alta temperatura<\/li>\n\n\n\n<li>Componentes cer\u00e1micos de precisi\u00f3n<\/li>\n<\/ul>\n\n\n\n<h1 class=\"wp-block-heading\">Conclusi\u00f3n<\/h1>\n\n\n\n<p>El carburo de silicio (SiC) es un material avanzado cr\u00edtico que combina la resistencia estructural de la cer\u00e1mica con la funcionalidad de los semiconductores. Sus m\u00e9todos de s\u00edntesis, control microestructural y procesos de fabricaci\u00f3n determinan directamente el rendimiento en aplicaciones industriales y electr\u00f3nicas.<\/p>\n\n\n\n<p>Con la r\u00e1pida expansi\u00f3n de la electr\u00f3nica de potencia, los veh\u00edculos el\u00e9ctricos y la fabricaci\u00f3n avanzada en 2026, se espera que el carburo de silicio siga siendo un material fundamental en las industrias de alto rendimiento de pr\u00f3xima generaci\u00f3n.<\/p>","protected":false},"excerpt":{"rendered":"<p>1. What Is Silicon Carbide (SiC)? Silicon carbide (SiC), also known as carborundum, is a high-performance non-metallic material composed of silicon (Si) and carbon (C). It is widely used in: SiC is considered a next-generation advanced material due to its exceptional thermal, mechanical, and electrical properties. 2. Industrial Synthesis of Silicon Carbide 2.1 Acheson Process [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":8880,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"_uag_custom_page_level_css":"","footnotes":""},"categories":[27,12],"tags":[2349,1999,2353,2352,2357,2351,2358,2321,2347,2322,1983,2356,2350,2348,2354,2355],"class_list":["post-8879","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-companynews","category-news","tag-acheson-process-silicon-carbide","tag-high-purity-sic","tag-hot-pressed-sic","tag-reaction-bonded-sic","tag-refractory-sic-materials","tag-sic-ceramic-manufacturing","tag-sic-industrial-applications","tag-sic-power-electronics","tag-sic-synthesis-process","tag-silicon-carbide-applications","tag-silicon-carbide-crystal-structure","tag-silicon-carbide-furnace-components","tag-silicon-carbide-properties","tag-silicon-carbide-sic-2","tag-silicon-carbide-sintering","tag-wide-bandgap-semiconductor-sic"],"acf":[],"uagb_featured_image_src":{"full":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-SiC-Synthesis-Properties-Applications-and-Manufacturing-Processes-of-SiC-Components.webp",1536,1024,false],"thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-SiC-Synthesis-Properties-Applications-and-Manufacturing-Processes-of-SiC-Components-150x150.webp",150,150,true],"medium":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-SiC-Synthesis-Properties-Applications-and-Manufacturing-Processes-of-SiC-Components-300x200.webp",300,200,true],"medium_large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-SiC-Synthesis-Properties-Applications-and-Manufacturing-Processes-of-SiC-Components-768x512.webp",768,512,true],"large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-SiC-Synthesis-Properties-Applications-and-Manufacturing-Processes-of-SiC-Components-1024x683.webp",800,534,true],"1536x1536":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-SiC-Synthesis-Properties-Applications-and-Manufacturing-Processes-of-SiC-Components.webp",1536,1024,false],"2048x2048":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-SiC-Synthesis-Properties-Applications-and-Manufacturing-Processes-of-SiC-Components.webp",1536,1024,false],"trp-custom-language-flag":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-SiC-Synthesis-Properties-Applications-and-Manufacturing-Processes-of-SiC-Components-18x12.webp",18,12,true],"woocommerce_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-SiC-Synthesis-Properties-Applications-and-Manufacturing-Processes-of-SiC-Components-300x300.webp",300,300,true],"woocommerce_single":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-SiC-Synthesis-Properties-Applications-and-Manufacturing-Processes-of-SiC-Components-600x400.webp",600,400,true],"woocommerce_gallery_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-SiC-Synthesis-Properties-Applications-and-Manufacturing-Processes-of-SiC-Components-100x100.webp",100,100,true]},"uagb_author_info":{"display_name":"lydia","author_link":"https:\/\/www.sic-wafers.com\/es\/author\/lydia\/"},"uagb_comment_info":1,"uagb_excerpt":"1. What Is Silicon Carbide (SiC)? Silicon carbide (SiC), also known as carborundum, is a high-performance non-metallic material composed of silicon (Si) and carbon (C). It is widely used in: SiC is considered a next-generation advanced material due to its exceptional thermal, mechanical, and electrical properties. 2. Industrial Synthesis of Silicon Carbide 2.1 Acheson Process&hellip;","_links":{"self":[{"href":"https:\/\/www.sic-wafers.com\/es\/wp-json\/wp\/v2\/posts\/8879","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.sic-wafers.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.sic-wafers.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/es\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/es\/wp-json\/wp\/v2\/comments?post=8879"}],"version-history":[{"count":2,"href":"https:\/\/www.sic-wafers.com\/es\/wp-json\/wp\/v2\/posts\/8879\/revisions"}],"predecessor-version":[{"id":8882,"href":"https:\/\/www.sic-wafers.com\/es\/wp-json\/wp\/v2\/posts\/8879\/revisions\/8882"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/es\/wp-json\/wp\/v2\/media\/8880"}],"wp:attachment":[{"href":"https:\/\/www.sic-wafers.com\/es\/wp-json\/wp\/v2\/media?parent=8879"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/es\/wp-json\/wp\/v2\/categories?post=8879"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/es\/wp-json\/wp\/v2\/tags?post=8879"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}