{"id":8098,"date":"2025-12-12T14:20:50","date_gmt":"2025-12-12T06:20:50","guid":{"rendered":"https:\/\/www.sic-wafers.com\/?post_type=product&p=8098"},"modified":"2025-12-12T14:20:51","modified_gmt":"2025-12-12T06:20:51","slug":"silicon-carbide-sic-rectangle-substrate-high-purity-single-crystal-sic-plate-for-power-rf-optoelectronic-applications","status":"publish","type":"product","link":"https:\/\/www.sic-wafers.com\/es\/product\/silicon-carbide-sic-rectangle-substrate-high-purity-single-crystal-sic-plate-for-power-rf-optoelectronic-applications\/","title":{"rendered":"Sustrato rectangular de carburo de silicio SiC - Placa de SiC monocristalino de gran pureza para aplicaciones de potencia, RF y optoelectr\u00f3nica"},"content":{"rendered":"

En Silicon Carbide (SiC) Rectangle Substrate<\/strong> is a high-performance single-crystal semiconductor material designed for next-generation electronic and photonic devices. With its wide bandgap, excellent thermal conductivity, superior chemical resistance, and high mechanical strength, SiC is widely regarded as one of the most advanced substrate materials for high-power, high-temperature, and high-frequency applications.<\/p>\n

\"\" \"\" \"\"<\/p>\n

This rectangular SiC substrate offers flexible dimension customization, making it ideal for device R&D, prototype fabrication, optical components, epitaxy growth, and high-reliability industrial systems.<\/p>\n

Principales caracter\u00edsticas y ventajas<\/strong><\/h1>\n

1. Wide Bandgap Semiconductor<\/strong><\/h3>\n
    \n
  • \n

    Bandgap of ~3.2\u20133.3 eV<\/strong>, significantly higher than silicon<\/p>\n<\/li>\n

  • \n

    Supports high breakdown voltage and ultra-efficient switching performance<\/p>\n<\/li>\n<\/ul>\n

    2. Excellent Thermal Conductivity<\/strong><\/h3>\n
      \n
    • \n

      3.0\u20134.9 W\/cm\u00b7K<\/strong>, ensuring efficient heat dissipation<\/p>\n<\/li>\n

    • \n

      Suitable for high-density power modules and RF devices<\/p>\n<\/li>\n<\/ul>\n

      3. High Mechanical Strength<\/strong><\/h3>\n
        \n
      • \n

        Mohs hardness ~9.2<\/strong>, almost as hard as diamond<\/p>\n<\/li>\n

      • \n

        Resistant to wear during wire-sawing, CMP, and device process steps<\/p>\n<\/li>\n<\/ul>\n

        4. High-Temperature Stability<\/strong><\/h3>\n
          \n
        • \n

          Maintains electrical and structural integrity above 600\u00b0C<\/strong><\/p>\n<\/li>\n

        • \n

          Ideal for aerospace, automotive, and extreme-environment electronics<\/p>\n<\/li>\n<\/ul>\n

          5. Customizable Dimensions & Doping<\/strong><\/h3>\n
            \n
          • \n

            Various rectangle sizes available<\/p>\n<\/li>\n

          • \n

            N-type, P-type, semi-insulating options<\/p>\n<\/li>\n

          • \n

            Surface finish available in single \/ double polished, epi-ready<\/p>\n<\/li>\n<\/ul>\n

            Manufacturing Process (PVT Growth)<\/strong><\/h1>\n
              \n
            1. \n

              Raw Material Loading<\/strong>
              Ultra-high-purity SiC powders are placed inside a graphite crucible.<\/p>\n<\/li>\n

            2. \n

              Crystal Growth (>2000\u00b0C)<\/strong>
              Using Physical Vapor Transport (PVT), SiC sublimates and recondenses on a seed crystal.<\/p>\n<\/li>\n

            3. \n

              Ingot Processing<\/strong>
              The crystal boule is ground and oriented (C-plane, 0\u00b0 or 4\u00b0 off-axis).<\/p>\n<\/li>\n

            4. \n

              High-Precision Slicing<\/strong>
              Diamond wire saws cut the crystal into rectangle plates or wafers.<\/p>\n<\/li>\n

            5. \n

              Lapping & Grinding<\/strong>
              Ensures flatness, uniform thickness, and removes slicing marks.<\/p>\n<\/li>\n

            6. \n

              Chemical Mechanical Polishing (CMP)<\/strong>
              Produces a mirror-grade surface suitable for epitaxial deposition.<\/p>\n<\/li>\n

            7. \n

              Optional Doping<\/strong>
              Nitrogen (N-type), Aluminum\/Boron (P-type), or SI\/HPSI for RF & detector applications.<\/p>\n<\/li>\n

            8. \n

              Inspecci\u00f3n de calidad<\/strong>
              Micropipe density, warp, bow, Ra value, and TTV are fully tested.<\/p>\n<\/li>\n<\/ol>\n

              Aplicaciones<\/strong><\/h1>\n

              Electr\u00f3nica de potencia<\/strong><\/h3>\n
                \n
              • \n

                MOSFET de SiC<\/p>\n<\/li>\n

              • \n

                Schottky barrier diodes (SBD)<\/p>\n<\/li>\n

              • \n

                EV traction inverters<\/p>\n<\/li>\n

              • \n

                High-voltage rectifiers<\/p>\n<\/li>\n<\/ul>\n

                RF & Microwave Devices<\/strong><\/h3>\n
                  \n
                • \n

                  Radar transmitters<\/p>\n<\/li>\n

                • \n

                  5G base station modules<\/p>\n<\/li>\n

                • \n

                  Satellite communication systems<\/p>\n<\/li>\n<\/ul>\n

                  Optoelectr\u00f3nica<\/strong><\/h3>\n
                    \n
                  • \n

                    UV lasers<\/p>\n<\/li>\n

                  • \n

                    UV photodetectors<\/p>\n<\/li>\n

                  • \n

                    High-power LED substrates<\/p>\n<\/li>\n<\/ul>\n

                    Extreme-Environment Electronics<\/strong><\/h3>\n
                      \n
                    • \n

                      Aerospace & defense<\/p>\n<\/li>\n

                    • \n

                      Sensores de alta temperatura<\/p>\n<\/li>\n

                    • \n

                      High-radiation equipment<\/p>\n<\/li>\n<\/ul>\n

                      R&D and Prototype Development<\/strong><\/h3>\n
                        \n
                      • \n

                        Material characterization<\/p>\n<\/li>\n

                      • \n

                        Epitaxial testing<\/p>\n<\/li>\n

                      • \n

                        Device structure optimization<\/p>\n<\/li>\n<\/ul>\n

                        Especificaciones t\u00e9cnicas<\/strong><\/h1>\n

                        1. General Specifications<\/strong><\/h2>\n
                        \n
                        \n\n\n\n\n\n\n\n\n\n\n\n\n\n
                        Art\u00edculo<\/th>\nEspecificaci\u00f3n<\/th>\n<\/tr>\n<\/thead>\n
                        Material<\/td>\nSingle-crystal Silicon Carbide (SiC)<\/td>\n<\/tr>\n
                        Shape<\/td>\nRectangle substrate \/ plate<\/td>\n<\/tr>\n
                        Available Polytypes<\/td>\n4H-SiC, 6H-SiC<\/td>\n<\/tr>\n
                        Orientaci\u00f3n<\/td>\nC-plane (0001), Off-axis 0\u00b0 \/ 4\u00b0<\/td>\n<\/tr>\n
                        Espesor<\/td>\n330\u2013500 \u03bcm (customizable)<\/td>\n<\/tr>\n
                        Acabado superficial<\/td>\nSSP \/ DSP \/ Epi-ready polished<\/td>\n<\/tr>\n
                        Doping<\/td>\nN-type, P-type, Semi-insulating HPSI<\/td>\n<\/tr>\n
                        Densidad de defectos<\/td>\n< 0.5 cm\u207b\u00b2 (4H standard), optional lower<\/td>\n<\/tr>\n
                        Grado<\/td>\nResearch-grade \/ device-grade<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

                        2. Physical & Electrical Properties<\/strong><\/h2>\n
                        \n
                        \n\n\n\n\n\n\n\n\n\n\n\n
                        Propiedad<\/th>\n4H-SiC<\/th>\n6H-SiC<\/th>\n<\/tr>\n<\/thead>\n
                        Bandgap<\/td>\n~3.26 eV<\/td>\n~3.02 eV<\/td>\n<\/tr>\n
                        Conductividad t\u00e9rmica<\/td>\n4.9 W\/cm\u00b7K<\/td>\n4.9 W\/cm\u00b7K<\/td>\n<\/tr>\n
                        Densidad<\/td>\n3.21 g\/cm\u00b3<\/td>\n3.21 g\/cm\u00b3<\/td>\n<\/tr>\n
                        Breakdown Electric Field<\/td>\n2.2\u20132.8 MV\/cm<\/td>\n2.2\u20132.8 MV\/cm<\/td>\n<\/tr>\n
                        Electron Mobility<\/td>\n~800 cm\u00b2\/V\u00b7s<\/td>\n~400 cm\u00b2\/V\u00b7s<\/td>\n<\/tr>\n
                        Dureza Mohs<\/td>\n~9.2<\/td>\n~9.2<\/td>\n<\/tr>\n
                        Constante diel\u00e9ctrica<\/td>\n9.6<\/td>\n9.66<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

                        3. Surface & Quality Parameters<\/strong><\/h2>\n
                        \n
                        \n\n\n\n\n\n\n\n\n\n\n
                        Par\u00e1metro<\/th>\nValor t\u00edpico<\/th>\n<\/tr>\n<\/thead>\n
                        Rugosidad superficial (Ra)<\/td>\n\u2264 0.2 nm (polished)<\/td>\n<\/tr>\n
                        TTV<\/td>\n< 5 \u03bcm<\/td>\n<\/tr>\n
                        Bow<\/td>\n< 10 \u03bcm<\/td>\n<\/tr>\n
                        Warp<\/td>\n< 15 \u03bcm<\/td>\n<\/tr>\n
                        Particle Level<\/td>\n< 15 @ \u22650.3 \u03bcm<\/td>\n<\/tr>\n
                        Planitud<\/td>\n\u03bb\/10 @ 632.8 nm (optional)<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

                        4. Customization Options<\/strong><\/h2>\n
                        \n
                        \n\n\n\n\n\n\n\n\n\n\n\n
                        Customizable Item<\/th>\nOptions<\/th>\n<\/tr>\n<\/thead>\n
                        Dimensions<\/td>\nAny rectangular size available<\/td>\n<\/tr>\n
                        Espesor<\/td>\n0.33\u20130.50 mm standard; others on request<\/td>\n<\/tr>\n
                        Polytype<\/td>\n4H-SiC \/ 6H-SiC<\/td>\n<\/tr>\n
                        Orientaci\u00f3n<\/td>\n0\u00b0 or 4\u00b0 off-axis<\/td>\n<\/tr>\n
                        Pulido<\/td>\nSSP \/ DSP \/ Epi-ready<\/td>\n<\/tr>\n
                        Doping<\/td>\nN-type, P-type, SI \/ HPSI<\/td>\n<\/tr>\n
                        Edge Shape<\/td>\nSquare edge \/ chamfered edge<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

                        PREGUNTAS FRECUENTES<\/strong><\/h1>\n

                        Q1: Can the rectangle substrate be made in any size?<\/strong>
                        Yes. Fully customizable rectangular dimensions are available based on your design.<\/p>\n

                        Q2: Do you provide epitaxy services?<\/strong>
                        We offer epi-ready polishing, and epitaxial layers can be added upon request.<\/p>\n

                        Q3: What\u2019s the typical lead time?<\/strong>
                        Standard production lead time is about 30 days<\/strong>.<\/p>\n

                        Q4: Is research-grade and device-grade quality available?<\/strong>
                        Yes. Both grades are produced according to customer requirements.<\/p>\n

                        Packaging & Delivery<\/strong><\/h1>\n
                          \n
                        • \n

                          Packaging:<\/strong> Custom anti-static boxes, vacuum-sealed or nitrogen-filled<\/p>\n<\/li>\n

                        • \n

                          Shipping:<\/strong> Protective cushioning for safe transport<\/p>\n<\/li>\n

                        • \n

                          Lead Time:<\/strong> 2-4 weeks<\/p>\n<\/li>\n

                        • \n

                          Supply Capability:<\/strong> Flexible based on order volume<\/p>\n<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

                          En Silicon Carbide (SiC) Rectangle Substrate<\/strong> is a high-performance single-crystal semiconductor material designed for next-generation electronic and photonic devices. With its wide bandgap, excellent thermal conductivity, superior chemical resistance, and high mechanical strength<\/p>","protected":false},"featured_media":8099,"comment_status":"open","ping_status":"closed","template":"","meta":{"_acf_changed":false,"_uag_custom_page_level_css":""},"product_brand":[],"product_cat":[1092,1083],"product_tag":[1467,1466,1464,1465,1463],"class_list":{"0":"post-8098","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-high-purity","7":"product_cat-sic-wafer","8":"product_tag-semiconductor-materials","9":"product_tag-sic-material","10":"product_tag-sic-substrate","11":"product_tag-sic-wafer","12":"product_tag-silicon-carbide-rectangle","14":"first","15":"instock","16":"shipping-taxable","17":"product-type-simple"},"acf":[],"uagb_featured_image_src":{"full":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/SiC-square4-scaled.webp",2560,2560,false],"thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/SiC-square4-150x150.webp",150,150,true],"medium":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/SiC-square4-300x300.webp",300,300,true],"medium_large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/SiC-square4-768x768.webp",768,768,true],"large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/SiC-square4-1024x1024.webp",800,800,true],"1536x1536":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/SiC-square4-1536x1536.webp",1536,1536,true],"2048x2048":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/SiC-square4-2048x2048.webp",2048,2048,true],"trp-custom-language-flag":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/SiC-square4-scaled.webp",12,12,false],"woocommerce_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/SiC-square4-300x300.webp",300,300,true],"woocommerce_single":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/SiC-square4-600x600.webp",600,600,true],"woocommerce_gallery_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/SiC-square4-100x100.webp",100,100,true]},"uagb_author_info":{"display_name":"lydia","author_link":"https:\/\/www.sic-wafers.com\/es\/author\/"},"uagb_comment_info":0,"uagb_excerpt":"The Silicon Carbide (SiC) Rectangle Substrate is a high-performance single-crystal semiconductor material designed for next-generation electronic and photonic devices. With its wide bandgap, excellent thermal conductivity, superior chemical resistance, and high mechanical strength","_links":{"self":[{"href":"https:\/\/www.sic-wafers.com\/es\/wp-json\/wp\/v2\/product\/8098","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.sic-wafers.com\/es\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.sic-wafers.com\/es\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/es\/wp-json\/wp\/v2\/comments?post=8098"}],"version-history":[{"count":2,"href":"https:\/\/www.sic-wafers.com\/es\/wp-json\/wp\/v2\/product\/8098\/revisions"}],"predecessor-version":[{"id":8109,"href":"https:\/\/www.sic-wafers.com\/es\/wp-json\/wp\/v2\/product\/8098\/revisions\/8109"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/es\/wp-json\/wp\/v2\/media\/8099"}],"wp:attachment":[{"href":"https:\/\/www.sic-wafers.com\/es\/wp-json\/wp\/v2\/media?parent=8098"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/es\/wp-json\/wp\/v2\/product_brand?post=8098"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/es\/wp-json\/wp\/v2\/product_cat?post=8098"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/es\/wp-json\/wp\/v2\/product_tag?post=8098"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}