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<\/p>\nThe 4H-N SiC Substrate is a high-purity, single-crystal semiconductor material manufactured using the Physical Vapor Transport (PVT) method. With extremely low defect density, excellent thermal conductivity, and stable electrical characteristics, it is widely used in power electronics, RF\/microwave components, and UV optoelectronic devices.<\/p>\n
<\/p>\n
The compact 10\u00d710 mm format is ideal for R&D, device prototyping, epitaxial testing, and laboratory semiconductor research.<\/p>\n
Polytype: 4H-SiC<\/p>\n<\/li>\n
Conductivity: N-type<\/p>\n<\/li>\n
Micropipe Density (MPD): <1 cm\u207b\u00b2<\/p>\n<\/li>\n
Threading Dislocation Density: <10\u2074 cm\u207b\u00b2<\/p>\n<\/li>\n<\/ul>\n
Si-face (CMP): Ra \u2264 0.5 nm<\/p>\n<\/li>\n
C-face: Ra \u2264 1 nm<\/p>\n<\/li>\n
Suitable for MOCVD, CVD, and HVPE epitaxy<\/p>\n<\/li>\n<\/ul>\n
Resistivity: 0.01\u20130.1 \u03a9\u00b7cm<\/p>\n<\/li>\n
Carrier concentration: 1\u00d710\u00b9\u2078 \u2013 5\u00d710\u00b9\u2079 cm\u207b\u00b3<\/p>\n<\/li>\n
Supports high-voltage and high-frequency device structures<\/p>\n<\/li>\n<\/ul>\n
Thermal conductivity: ~490 W\/m\u00b7K<\/p>\n<\/li>\n
Operating temperature: up to 600\u00b0C<\/p>\n<\/li>\n
CTE: 4.0\u00d710\u207b\u2076 \/K<\/p>\n<\/li>\n<\/ul>\n
Vickers hardness: 28\u201332 GPa<\/p>\n<\/li>\n
Flexural strength: >400 MPa<\/p>\n<\/li>\n
Highly durable and wear-resistant<\/p>\n<\/li>\n<\/ul>\n
| Category<\/th>\n | Sp\u00e9cifications<\/th>\n<\/tr>\n<\/thead>\n |
|---|---|
| Mat\u00e9riau<\/td>\n | 4H-SiC Single Crystal (N-type)<\/td>\n<\/tr>\n |
| Dimensions<\/td>\n | 10\u00d710 mm (\u00b10.05 mm)<\/td>\n<\/tr>\n |
| Thickness Options<\/td>\n | 100\u2013500 \u03bcm<\/td>\n<\/tr>\n |
| Orientation<\/td>\n | (0001) \u00b1 0.5\u00b0<\/td>\n<\/tr>\n |
| Qualit\u00e9 de la surface<\/td>\n | CMP \/ Polished, Ra \u2264 0.5 nm<\/td>\n<\/tr>\n |
| R\u00e9sistivit\u00e9<\/td>\n | 0.01\u20130.1 \u03a9\u00b7cm<\/td>\n<\/tr>\n |
| Conductivit\u00e9 thermique<\/td>\n | 490 W\/m\u00b7K<\/td>\n<\/tr>\n |
| Defects<\/td>\n | MPD < 1 cm\u207b\u00b2<\/td>\n<\/tr>\n |
| Couleur<\/td>\n | Green-tea surface tone<\/td>\n<\/tr>\n |
| Grade Options<\/td>\n | Prime, Research, Dummy<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\nAvailable Customization<\/h2>\nSizes: 5\u00d75 mm, 5\u00d710 mm, 10\u00d720 mm, \u00d82\u20138 inch<\/p>\n<\/li>\n Thickness: 100\u2013500 \u03bcm or custom<\/p>\n<\/li>\n Orientation: on-axis, 4\u00b0, or 8\u00b0 off-axis<\/p>\n<\/li>\n Surface Finish: SSP\/DSP optional<\/p>\n<\/li>\n Doping Options: N-type, P-type, semi-insulating<\/p>\n<\/li>\n Backside metallization available<\/p>\n<\/li>\n<\/ul>\n Applications<\/h2>\n |
SiC MOSFETs, Schottky diodes, high-voltage power devices.<\/p>\n
RF power amplifiers, mm-wave modules, high-frequency switches.<\/p>\n
EV inverters, power module development, wide-bandgap testing.<\/p>\n
High-temperature, radiation-resistant device manufacturing.<\/p>\n
UV LEDs, photodiodes, GaN\/AlN epitaxy, laser structures.<\/p>\n
Material characterization, epitaxy research, device prototyping.<\/p>\n
1. What advantages does 4H-SiC have over 6H-SiC?<\/strong> 2. Do you supply conductive or semi-insulating SiC substrates?<\/strong> 3. Is this substrate ready for epitaxy?<\/strong> The 4H-N SiC Substrate is a high-purity, single-crystal semiconductor material manufactured using the Physical Vapor Transport (PVT) method. With extremely low defect density, excellent thermal conductivity, and stable electrical characteristics, it is widely used in power electronics, RF\/microwave components, and UV optoelectronic devices.<\/p>","protected":false},"featured_media":8124,"comment_status":"open","ping_status":"closed","template":"","meta":{"_acf_changed":false,"_uag_custom_page_level_css":""},"product_brand":[],"product_cat":[1091,1083],"product_tag":[1473,1474,1475,1465],"class_list":{"0":"post-8123","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-4h-n","7":"product_cat-sic-wafer","8":"product_tag-4h-sic-substrate","9":"product_tag-n-type-sic","10":"product_tag-sic-for-power-electronics","11":"product_tag-sic-wafer","13":"first","14":"instock","15":"shipping-taxable","16":"product-type-simple"},"acf":[],"uagb_featured_image_src":{"full":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/4H-N-SiC-Substrate-for-Power-Electronics-RF-Devices-UV-Optoelectronics3-scaled.webp",2560,2560,false],"thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/4H-N-SiC-Substrate-for-Power-Electronics-RF-Devices-UV-Optoelectronics3-150x150.webp",150,150,true],"medium":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/4H-N-SiC-Substrate-for-Power-Electronics-RF-Devices-UV-Optoelectronics3-300x300.webp",300,300,true],"medium_large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/4H-N-SiC-Substrate-for-Power-Electronics-RF-Devices-UV-Optoelectronics3-768x768.webp",768,768,true],"large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/4H-N-SiC-Substrate-for-Power-Electronics-RF-Devices-UV-Optoelectronics3-1024x1024.webp",800,800,true],"1536x1536":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/4H-N-SiC-Substrate-for-Power-Electronics-RF-Devices-UV-Optoelectronics3-1536x1536.webp",1536,1536,true],"2048x2048":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/4H-N-SiC-Substrate-for-Power-Electronics-RF-Devices-UV-Optoelectronics3-2048x2048.webp",2048,2048,true],"trp-custom-language-flag":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/4H-N-SiC-Substrate-for-Power-Electronics-RF-Devices-UV-Optoelectronics3-scaled.webp",12,12,false],"woocommerce_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/4H-N-SiC-Substrate-for-Power-Electronics-RF-Devices-UV-Optoelectronics3-300x300.webp",300,300,true],"woocommerce_single":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/4H-N-SiC-Substrate-for-Power-Electronics-RF-Devices-UV-Optoelectronics3-600x600.webp",600,600,true],"woocommerce_gallery_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/4H-N-SiC-Substrate-for-Power-Electronics-RF-Devices-UV-Optoelectronics3-100x100.webp",100,100,true]},"uagb_author_info":{"display_name":"lydia","author_link":"https:\/\/www.sic-wafers.com\/fr\/author\/"},"uagb_comment_info":0,"uagb_excerpt":"The 4H-N SiC Substrate is a high-purity, single-crystal semiconductor material manufactured using the Physical Vapor Transport (PVT) method. With extremely low defect density, excellent thermal conductivity, and stable electrical characteristics, it is widely used in power electronics, RF\/microwave components, and UV optoelectronic devices.","_links":{"self":[{"href":"https:\/\/www.sic-wafers.com\/fr\/wp-json\/wp\/v2\/product\/8123","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.sic-wafers.com\/fr\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.sic-wafers.com\/fr\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/fr\/wp-json\/wp\/v2\/comments?post=8123"}],"version-history":[{"count":2,"href":"https:\/\/www.sic-wafers.com\/fr\/wp-json\/wp\/v2\/product\/8123\/revisions"}],"predecessor-version":[{"id":8133,"href":"https:\/\/www.sic-wafers.com\/fr\/wp-json\/wp\/v2\/product\/8123\/revisions\/8133"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/fr\/wp-json\/wp\/v2\/media\/8124"}],"wp:attachment":[{"href":"https:\/\/www.sic-wafers.com\/fr\/wp-json\/wp\/v2\/media?parent=8123"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/fr\/wp-json\/wp\/v2\/product_brand?post=8123"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/fr\/wp-json\/wp\/v2\/product_cat?post=8123"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/fr\/wp-json\/wp\/v2\/product_tag?post=8123"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
4H-SiC provides higher electron mobility, lower on-resistance, and better performance in high-power and high-frequency devices.<\/p>\n
Yes. Both N-type conductive and semi-insulating 4H-SiC substrates are available with customizable resistivity.<\/p>\n
Yes. The CMP-polished Si-face is epi-ready and suitable for GaN, AlN, and SiC epitaxial growth using MOCVD, CVD, or HVPE.<\/p>","protected":false},"excerpt":{"rendered":"