{"id":8334,"date":"2025-12-29T10:31:39","date_gmt":"2025-12-29T02:31:39","guid":{"rendered":"https:\/\/www.sic-wafers.com\/?post_type=product&p=8334"},"modified":"2025-12-29T10:35:59","modified_gmt":"2025-12-29T02:35:59","slug":"2-inch-zinc-doped-gallium-arsenide-gaas-wafer-for-optoelectronic-and-laser-devices","status":"publish","type":"product","link":"https:\/\/www.sic-wafers.com\/fr\/product\/2-inch-zinc-doped-gallium-arsenide-gaas-wafer-for-optoelectronic-and-laser-devices\/","title":{"rendered":"2-Inch Zinc-Doped Gallium Arsenide (GaAs) Wafer for Optoelectronic and Laser Devices"},"content":{"rendered":"

The 2-inch zinc-doped Gallium Arsenide (GaAs) wafer is a p-type compound semiconductor wafer manufactured through the Vertical Gradient Freeze (VGF) crystal growth technique. This growth method enables precise control over crystal composition and dopant distribution, resulting in uniform electrical properties and stable wafer-to-wafer performance.<\/p>\n

Zinc is introduced as an acceptor dopant to achieve p-type conductivity with controlled carrier concentration and low resistivity. Combined with the inherent advantages of GaAs as a direct bandgap III\u2013V semiconductor, this wafer delivers high optical emission efficiency, fast carrier response, and reliable electrical behavior. These characteristics make it well suited for light-emitting devices, laser diodes, and other optoelectronic components that require consistent wafer quality.<\/p>\n

\"2-Inch\"\" \"\"<\/p>\n

The wafer is produced with a standard (100) crystal orientation and optional misorientation angles to support optimized epitaxial layer growth. Polished surface finishes, low etch pit density, and strict flatness control allow the wafer to meet the requirements of advanced wafer processing, photolithography, and epitaxial deposition processes such as MBE and MOCVD.<\/p>\n

Dimensional accuracy, surface cleanliness, and mechanical stability are tightly controlled throughout the manufacturing process. Optional orientation flats, notch configurations, and backside laser marking provide flexibility for equipment compatibility, automation, and traceability in production environments. The 2-inch Zn-doped GaAs wafer is suitable for both research-scale development and volume manufacturing workflows.<\/p>\n

Material and Physical Characteristics<\/strong><\/h2>\n

Gallium Arsenide is a crystalline III\u2013V compound semiconductor with a zinc blende crystal structure. It exhibits a direct bandgap, high electron mobility, and excellent thermal and electrical stability under operating conditions commonly encountered in optoelectronic and high-frequency electronic devices. Zinc-doped GaAs wafers offer predictable p-type behavior, enabling repeatable device characteristics and improved yield.<\/p>\n

Key physical properties include a density of approximately 5.32 g\/cm\u00b3, a molecular weight of 144.64, and a melting point of approximately 1400 \u00b0C. The gray crystalline appearance and cubic lattice structure are typical of high-purity single-crystal GaAs material grown under controlled conditions.<\/p>\n

\"\" \"\" \"\"<\/p>\n

Manufacturing and Quality Control<\/strong><\/h2>\n

The wafer is grown using the Vertical Gradient Freeze method, which allows slow and controlled solidification of the GaAs crystal. This process minimizes thermal stress, reduces crystal defects, and improves dopant uniformity across the wafer surface.<\/p>\n

Post-growth processing includes precision slicing, lapping, polishing, and cleaning to achieve the required thickness, surface roughness, and flatness specifications. Each wafer undergoes inspection for dimensional accuracy, surface quality, and electrical properties. Key parameters such as etch pit density, particle count, total thickness variation, bow, and warp are monitored to ensure consistency and reliability for downstream processing.<\/p>\n

Sp\u00e9cifications techniques<\/strong><\/h2>\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Attribute<\/th>\nValeur<\/th>\n<\/tr>\n<\/thead>\n
Mat\u00e9riau<\/td>\nGallium Arsenide (GaAs)<\/td>\n<\/tr>\n
Dopant<\/td>\nZinc (Zn)<\/td>\n<\/tr>\n
Type de plaquette<\/td>\nP-Type Semiconductor Wafer<\/td>\n<\/tr>\n
Crystal Growth Method<\/td>\nVertical Gradient Freeze (VGF)<\/td>\n<\/tr>\n
Structure cristalline<\/td>\nZinc Blende<\/td>\n<\/tr>\n
Orientation des cristaux<\/td>\n(100) \u00b1 0.5\u00b0<\/td>\n<\/tr>\n
Misorientation Options<\/td>\n2\u00b0 \/ 6\u00b0 \/ 15\u00b0 off (110)<\/td>\n<\/tr>\n
Diam\u00e8tre<\/td>\n50.8 \u00b1 0.2 mm<\/td>\n<\/tr>\n
\u00c9paisseur<\/td>\n220 \u2013 350 \u00b1 20 \u00b5m<\/td>\n<\/tr>\n
Orientation Flat<\/td>\n16 \u00b1 1 mm<\/td>\n<\/tr>\n
Identification Flat<\/td>\n8 \u00b1 1 mm<\/td>\n<\/tr>\n
Flat \/ Notch Options<\/td>\nEJ, US, or Notch<\/td>\n<\/tr>\n
Finition de la surface<\/td>\nP\/P or P\/E<\/td>\n<\/tr>\n
Concentration du transporteur<\/td>\n(0.3 \u2013 1.0) \u00d7 10\u00b9\u2078 cm\u207b\u00b3<\/td>\n<\/tr>\n
Electrical Resistivity<\/td>\n(0.8 \u2013 9.0) \u00d7 10\u207b\u00b3 \u03a9\u00b7cm<\/td>\n<\/tr>\n
Hall Mobility<\/td>\n1,500 \u2013 3,000 cm\u00b2\/V\u00b7s<\/td>\n<\/tr>\n
Etch Pit Density<\/td>\n\u2264 5,000 cm\u207b\u00b2<\/td>\n<\/tr>\n
Total Thickness Variation<\/td>\n\u2264 10 \u00b5m<\/td>\n<\/tr>\n
Bow \/ Warp<\/td>\n\u2264 30 \u00b5m<\/td>\n<\/tr>\n
Particle Count<\/td>\n< 50 particles (\u2265 0.3 \u00b5m per wafer)<\/td>\n<\/tr>\n
Laser Marking<\/td>\nBackside or upon request<\/td>\n<\/tr>\n
Packaging<\/td>\nSingle wafer container or cassette, aluminum composite outer bag<\/td>\n<\/tr>\n
CAS Number<\/td>\n1303-00-0<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Domaines d'application<\/strong><\/h2>\n
    \n
  • \n

    LED wafer processing and device fabrication<\/p>\n<\/li>\n

  • \n

    Laser diode wafer manufacturing<\/p>\n<\/li>\n

  • \n

    Optoelectronic and photonic devices<\/p>\n<\/li>\n

  • \n

    RF and high-frequency electronic components<\/p>\n<\/li>\n

  • \n

    Research and process development wafers<\/p>\n<\/li>\n<\/ul>\n

    Frequently Asked Questions<\/strong><\/h2>\n

    Why is zinc doping used for GaAs wafers?<\/strong>
    Zinc acts as an effective acceptor dopant in GaAs, providing stable p-type conductivity with controlled carrier concentration. This is critical for optoelectronic devices that rely on consistent hole transport and optical emission performance.<\/p>\n

    What makes this wafer suitable for epitaxial growth?<\/strong>
    The combination of controlled crystal orientation, low defect density, polished surface finish, and strict flatness specifications allows the wafer to be directly used for MBE and MOCVD epitaxial growth processes.<\/p>\n

    Can this wafer be supplied with customized mechanical or identification features?<\/strong>
    Yes. Orientation flats, notch options, backside laser marking, and selected surface or electrical parameters can be customized to meet specific equipment, automation, or process requirements.<\/p>","protected":false},"excerpt":{"rendered":"

    The 2-inch zinc-doped Gallium Arsenide (GaAs) wafer is a p-type compound semiconductor wafer manufactured through the Vertical Gradient Freeze (VGF) crystal growth technique. This growth method enables precise control over crystal composition and dopant distribution, resulting in uniform electrical properties and stable wafer-to-wafer performance.<\/p>","protected":false},"featured_media":8335,"comment_status":"open","ping_status":"closed","template":"","meta":{"_acf_changed":false,"_uag_custom_page_level_css":""},"product_brand":[],"product_cat":[1598],"product_tag":[1599,1602,1604,1603,1605,1601,1606,1600],"class_list":{"0":"post-8334","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-gaas-wafer","7":"product_tag-2-inch-gaas-wafer","8":"product_tag-gallium-arsenide-wafer","9":"product_tag-laser-diode-wafer","10":"product_tag-led-wafer","11":"product_tag-optoelectronic-wafer","12":"product_tag-p-type-gaas-wafer","13":"product_tag-vgf-gaas-wafer","14":"product_tag-zn-doped-gaas-wafer","16":"first","17":"instock","18":"shipping-taxable","19":"product-type-simple"},"acf":[],"uagb_featured_image_src":{"full":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/2-Inch-Zinc-Doped-Gallium-Arsenide-GaAs-Wafer-for-Optoelectronic-and-Laser-Devices-1-scaled.webp",2560,2560,false],"thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/2-Inch-Zinc-Doped-Gallium-Arsenide-GaAs-Wafer-for-Optoelectronic-and-Laser-Devices-1-150x150.webp",150,150,true],"medium":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/2-Inch-Zinc-Doped-Gallium-Arsenide-GaAs-Wafer-for-Optoelectronic-and-Laser-Devices-1-300x300.webp",300,300,true],"medium_large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/2-Inch-Zinc-Doped-Gallium-Arsenide-GaAs-Wafer-for-Optoelectronic-and-Laser-Devices-1-768x768.webp",768,768,true],"large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/2-Inch-Zinc-Doped-Gallium-Arsenide-GaAs-Wafer-for-Optoelectronic-and-Laser-Devices-1-1024x1024.webp",800,800,true],"1536x1536":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/2-Inch-Zinc-Doped-Gallium-Arsenide-GaAs-Wafer-for-Optoelectronic-and-Laser-Devices-1-1536x1536.webp",1536,1536,true],"2048x2048":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/2-Inch-Zinc-Doped-Gallium-Arsenide-GaAs-Wafer-for-Optoelectronic-and-Laser-Devices-1-2048x2048.webp",2048,2048,true],"trp-custom-language-flag":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/2-Inch-Zinc-Doped-Gallium-Arsenide-GaAs-Wafer-for-Optoelectronic-and-Laser-Devices-1-scaled.webp",12,12,false],"woocommerce_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/2-Inch-Zinc-Doped-Gallium-Arsenide-GaAs-Wafer-for-Optoelectronic-and-Laser-Devices-1-300x300.webp",300,300,true],"woocommerce_single":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/2-Inch-Zinc-Doped-Gallium-Arsenide-GaAs-Wafer-for-Optoelectronic-and-Laser-Devices-1-600x600.webp",600,600,true],"woocommerce_gallery_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/2-Inch-Zinc-Doped-Gallium-Arsenide-GaAs-Wafer-for-Optoelectronic-and-Laser-Devices-1-100x100.webp",100,100,true]},"uagb_author_info":{"display_name":"lydia","author_link":"https:\/\/www.sic-wafers.com\/fr\/author\/"},"uagb_comment_info":0,"uagb_excerpt":"The 2-inch zinc-doped Gallium Arsenide (GaAs) wafer is a p-type compound semiconductor wafer manufactured through the Vertical Gradient Freeze (VGF) crystal growth technique. This growth method enables precise control over crystal composition and dopant distribution, resulting in uniform electrical properties and stable wafer-to-wafer performance.","_links":{"self":[{"href":"https:\/\/www.sic-wafers.com\/fr\/wp-json\/wp\/v2\/product\/8334","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.sic-wafers.com\/fr\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.sic-wafers.com\/fr\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/fr\/wp-json\/wp\/v2\/comments?post=8334"}],"version-history":[{"count":4,"href":"https:\/\/www.sic-wafers.com\/fr\/wp-json\/wp\/v2\/product\/8334\/revisions"}],"predecessor-version":[{"id":8348,"href":"https:\/\/www.sic-wafers.com\/fr\/wp-json\/wp\/v2\/product\/8334\/revisions\/8348"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/fr\/wp-json\/wp\/v2\/media\/8335"}],"wp:attachment":[{"href":"https:\/\/www.sic-wafers.com\/fr\/wp-json\/wp\/v2\/media?parent=8334"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/fr\/wp-json\/wp\/v2\/product_brand?post=8334"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/fr\/wp-json\/wp\/v2\/product_cat?post=8334"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/fr\/wp-json\/wp\/v2\/product_tag?post=8334"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}