{"id":8802,"date":"2026-04-02T13:23:00","date_gmt":"2026-04-02T05:23:00","guid":{"rendered":"https:\/\/www.sic-wafers.com\/?p=8802"},"modified":"2026-04-09T10:01:43","modified_gmt":"2026-04-09T02:01:43","slug":"detailed-overview-of-silicon-carbide-sic-power-device-fabrication","status":"publish","type":"post","link":"https:\/\/www.sic-wafers.com\/hu\/detailed-overview-of-silicon-carbide-sic-power-device-fabrication\/","title":{"rendered":"A szil\u00edcium-karbid (SiC) teljes\u00edtm\u00e9ny\u0171 eszk\u00f6z\u00f6k gy\u00e1rt\u00e1s\u00e1nak r\u00e9szletes \u00e1ttekint\u00e9se"},"content":{"rendered":"
<\/div>\n

A szil\u00edcium-karbid (SiC) sz\u00e9les s\u00e1vsz\u00e9less\u00e9ge, nagy h\u0151vezet\u0151 k\u00e9pess\u00e9ge, nagy \u00e1t\u00fct\u00e9si tere \u00e9s nagy elektron sodr\u00f3d\u00e1si sebess\u00e9ge miatt a nagy teljes\u00edtm\u00e9ny\u0171 teljes\u00edtm\u00e9ny\u0171 teljes\u00edtm\u00e9ny\u0171 f\u00e9lvezet\u0151 eszk\u00f6z\u00f6k kritikus anyag\u00e1v\u00e1 v\u00e1lt. Ezek a tulajdons\u00e1gok teszik a SiC-teljes\u00edtm\u00e9ny\u0171 eszk\u00f6z\u00f6ket ide\u00e1lis eszk\u00f6zz\u00e9 az elektromos j\u00e1rm\u0171vek, energiat\u00e1rol\u00f3 rendszerek \u00e9s meg\u00fajul\u00f3 energiaforr\u00e1sok inverterei sz\u00e1m\u00e1ra, mivel a hagyom\u00e1nyos szil\u00edciumeszk\u00f6z\u00f6kh\u00f6z k\u00e9pest alacsonyabb vezet\u00e9si vesztes\u00e9geket \u00e9s nagyobb hat\u00e9konys\u00e1got k\u00edn\u00e1lnak. Ez a cikk r\u00e9szletes technikai \u00e1ttekint\u00e9st ny\u00fajt a SiC teljes\u00edtm\u00e9nyelemek gy\u00e1rt\u00e1s\u00e1r\u00f3l, a szubsztr\u00e1tokra, az epitaxi\u00e1lis n\u00f6veked\u00e9sre, az adal\u00e9kol\u00e1s szab\u00e1lyoz\u00e1s\u00e1ra, a hib\u00e1k kezel\u00e9s\u00e9re \u00e9s az ipar\u00e1g jelenlegi trendjeire \u00f6sszpontos\u00edtva.<\/p>\n\n\n\n

\"\"<\/figure>\n\n\n\n

1. Maganyag: 4H-SiC egykrist\u00e1lyos szubsztr\u00e1tum<\/a><\/h2>\n\n\n\n

A 4H-SiC a leggyakrabban haszn\u00e1lt politechnikai t\u00edpus az elektromos eszk\u00f6z\u00f6k gy\u00e1rt\u00e1s\u00e1ban. A \u201c4H\u201d a c tengely ment\u00e9n elhelyezked\u0151 r\u00e9tegrendet jel\u00f6li, amelyben n\u00e9gy Si-C k\u00e9tr\u00e9teg alkot egy hatsz\u00f6glet\u0171 egys\u00e9gcell\u00e1t (ABCB r\u00e9tegrend). A legfontosabb anyagi el\u0151ny\u00f6k a k\u00f6vetkez\u0151k:<\/p>\n\n\n\n

Ingatlan<\/th>\u00c9rt\u00e9k<\/th>Jelent\u0151s\u00e9g<\/th><\/tr><\/thead>
Bandgap<\/td>~3,3 eV<\/td>Magas h\u0151m\u00e9rs\u00e9klet\u0171 m\u0171k\u00f6d\u00e9s<\/td><\/tr>
Kritikus bont\u00e1si mez\u0151<\/td>2-3 MV\/cm<\/td>Nagyfesz\u00fclts\u00e9g\u0171 t\u0171r\u00e9s<\/td><\/tr>
H\u0151vezet\u0151 k\u00e9pess\u00e9g<\/td>~4,9 W\/cm-K<\/td>Hat\u00e9kony h\u0151elvezet\u00e9s<\/td><\/tr>
Elektronok sodr\u00f3d\u00e1si sebess\u00e9ge<\/td>~2\u00d710\u2077 cm\/s<\/td>Alkalmas nagyfrekvenci\u00e1s m\u0171k\u00f6d\u00e9sre<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

Ezek a tulajdons\u00e1gok teszik a 4H-SiC-et ide\u00e1lis eszk\u00f6zz\u00e9 a nagyfesz\u00fclts\u00e9g\u0171, nagy\u00e1ram\u00fa, magas h\u0151m\u00e9rs\u00e9klet\u0171 \u00e9s nagyfrekvenci\u00e1s eszk\u00f6z\u00f6k gy\u00e1rt\u00e1s\u00e1hoz.<\/p>\n\n\n\n

2. Al\u00e1t\u00e9t orient\u00e1ci\u00f3 \u00e9s tengelyen k\u00edv\u00fcli kialak\u00edt\u00e1s<\/h2>\n\n\n\n

A SiC {0001} krist\u00e1lys\u00edkok a k\u00f6vetkez\u0151k szerint oszt\u00e1lyozhat\u00f3k:<\/p>\n\n\n\n

    \n
  • Si-arc (0001)<\/strong>: A legfels\u0151 atomok szil\u00edciumot tartalmaznak. A fel\u00fcleti tulajdons\u00e1gok kedveznek a szab\u00e1lyozott epitaxi\u00e1lis n\u00f6veked\u00e9snek \u00e9s az alacsony hibas\u0171r\u0171s\u00e9gnek.<\/li>\n\n\n\n
  • C-oldal (000-1)<\/strong>: A legfels\u0151 atomok sz\u00e9natomok. A nagy k\u00e9miai aktivit\u00e1s gyorsabb n\u00f6veked\u00e9st, de nagyobb hibak\u00e9pz\u0151d\u00e9st \u00e9s nagyobb kih\u00edv\u00e1st jelent\u0151 adal\u00e9kanyag-szab\u00e1lyoz\u00e1st eredm\u00e9nyez.<\/li>\n<\/ul>\n\n\n\n

    A kereskedelmi forgalomban kaphat\u00f3 teljes\u00edtm\u00e9ny\u0171 eszk\u00f6z\u00f6k szinte kiz\u00e1r\u00f3lag Si-lap\u00fa, tengelyen k\u00edv\u00fcli, jellemz\u0151en 3,5\u00b0-4\u00b0-kal a ir\u00e1nyba d\u00f6nt\u00f6tt szubsztr\u00e1tokat haszn\u00e1lnak. Ez olyan atomi l\u00e9pcs\u0151ket hoz l\u00e9tre, amelyek t\u00e1mogatj\u00e1k a l\u00e9p\u00e9s-\u00e1raml\u00e1sos n\u00f6veked\u00e9st, elnyomj\u00e1k a k\u00e9tdimenzi\u00f3s magk\u00e9pz\u0151d\u00e9st, cs\u00f6kkentik a hib\u00e1kat, \u00e9s atomi s\u00edk epitaxi\u00e1lis r\u00e9tegeket eredm\u00e9nyeznek.<\/p>\n\n\n\n

    3. SiC epitaxi\u00e1lis n\u00f6veked\u00e9si folyamat<\/h2>\n\n\n\n

    Az epitaxi\u00e1lis n\u00f6veked\u00e9s egy egykrist\u00e1lyos SiC-r\u00e9teg lev\u00e1laszt\u00e1sa egy egykrist\u00e1lyos hordoz\u00f3ra, azonos krist\u00e1lyszerkezet megtart\u00e1s\u00e1val. Ez k\u00e9pezi az eszk\u00f6z\u00f6k akt\u00edv r\u00e9gi\u00f3it, p\u00e9ld\u00e1ul a MOSFET driftr\u00e9tegeket \u00e9s a P+ r\u00e9tegeket. A szabv\u00e1nyos m\u00f3dszer K\u00e9miai g\u0151zf\u00e1zis\u00fa lev\u00e1laszt\u00e1s (CVD)<\/strong>.<\/p>\n\n\n\n

    3.1 Szubsztr\u00e1t el\u0151k\u00e9sz\u00edt\u00e9se<\/h3>\n\n\n\n
    L\u00e9p\u00e9s<\/th>C\u00e9l<\/th>Tipikus param\u00e9terek<\/th><\/tr><\/thead>
    Hidrog\u00e9n marat\u00e1s<\/td>Karcol\u00e1sok, nat\u00edv oxid, szennyez\u0151d\u00e9sek elt\u00e1vol\u00edt\u00e1sa, atomi l\u00e9p\u00e9sek kialak\u00edt\u00e1sa<\/td>1500-1650\u00b0C, n\u00e9h\u00e1ny perc<\/td><\/tr>
    Tiszt\u00edt\u00e1s<\/td>A r\u00e9szecsk\u00e9k \u00e9s f\u00e9mionok elt\u00e1vol\u00edt\u00e1sa<\/td>RCA tiszta (SC1, SC2, DHF)<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

    3.2 Epitaxi\u00e1lis n\u00f6veked\u00e9si param\u00e9terek<\/h3>\n\n\n\n
    Param\u00e9ter<\/th>Tipikus tartom\u00e1ny<\/th>Megjegyz\u00e9sek<\/th><\/tr><\/thead>
    H\u0151m\u00e9rs\u00e9klet<\/td>1500-1650\u00b0C<\/td>A magas h\u0151m\u00e9rs\u00e9klet el\u0151seg\u00edti az el\u0151anyag boml\u00e1s\u00e1t \u00e9s az atomok fel\u00fcleti diff\u00fazi\u00f3j\u00e1t<\/td><\/tr>
    Nyom\u00e1s<\/td>100-300 mbar<\/td>Az alacsony nyom\u00e1s jav\u00edtja a vastags\u00e1g egyenletess\u00e9g\u00e9t \u00e9s cs\u00f6kkenti a r\u00e9szecskek\u00e9pz\u0151d\u00e9st<\/td><\/tr>
    Szil\u00edcium forr\u00e1s<\/td>SiH\u2084 vagy SiH\u2082Cl\u2082<\/td>SiH\u2082Cl\u2082 el\u0151nyben r\u00e9szes\u00edtve a 3C-SiC polyt\u00edpus\u00fa \u00e9s h\u00e1romsz\u00f6g alak\u00fa hib\u00e1k elnyom\u00e1s\u00e1ra<\/td><\/tr>
    Sz\u00e9nforr\u00e1s<\/td>C\u2083H\u2088 (prop\u00e1n) vagy C\u2082H\u2084 (etil\u00e9n)<\/td>Leggyakoribb a prop\u00e1n; etil\u00e9n alacsony h\u0151m\u00e9rs\u00e9klet\u0171 n\u00f6veked\u00e9shez vagy jobb egyenletess\u00e9ghez<\/td><\/tr>
    Si\/C ar\u00e1ny<\/td>0.7-1.0<\/td>Enyh\u00e9n C-gazdag a Si-cseppek \u00e9s a polyt\u00edpus\u00fa z\u00e1rv\u00e1nyok elker\u00fcl\u00e9se \u00e9rdek\u00e9ben.<\/td><\/tr>
    Dopping (N-t\u00edpus\u00fa)<\/td>N\u2082 vagy NH\u2083<\/td>Az NH\u2083 nagyobb hat\u00e9konys\u00e1got \u00e9s kevesebb prekurzor sz\u00fcks\u00e9ges<\/td><\/tr>
    Dopping (P-t\u00edpus\u00fa)<\/td>TMA vagy TEA<\/td>Alacsony hat\u00e9konys\u00e1g, pontos ellen\u0151rz\u00e9st ig\u00e9nyel az Al-C komplex k\u00e9pz\u0151d\u00e9s\u00e9nek megakad\u00e1lyoz\u00e1s\u00e1ra<\/td><\/tr>
    N\u00f6veked\u00e9si r\u00e1ta<\/td>5-20 \u00b5m\/h<\/td>A termel\u00e9si hat\u00e9konys\u00e1g \u00e9s a hibaellen\u0151rz\u00e9s egyens\u00falya<\/td><\/tr>
    Step-Flow n\u00f6veked\u00e9s<\/td>A tengelyen k\u00edv\u00fcli szubsztr\u00e1t \u00e9s szab\u00e1lyozott h\u0151m\u00e9rs\u00e9klet, nyom\u00e1s, Si\/C ar\u00e1ny seg\u00edts\u00e9g\u00e9vel \u00e9rhet\u0151 el.<\/td>Elnyomja a 2D magk\u00e9pz\u0151d\u00e9st, cs\u00f6kkenti a hib\u00e1kat, biztos\u00edtja az atomi s\u00edkoss\u00e1got.<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

    A n\u00f6veked\u00e9s sor\u00e1n az adatomok el\u0151nyben r\u00e9szes\u00edtik a l\u00e9pcs\u0151sz\u00e9leket, \u00e9s a l\u00e9pcs\u0151k a teraszokon kereszt\u00fcl terjednek, sima, alacsony hib\u00e1j\u00fa epitaxi\u00e1lis r\u00e9teget k\u00e9pezve.<\/p>\n\n\n\n

    3.3 H\u0171t\u00e9s \u00e9s kirakod\u00e1s<\/h3>\n\n\n\n

    A n\u00f6veszt\u00e9s ut\u00e1n az osty\u00e1kat H\u2082 vagy inert g\u00e1z alatt h\u0171tik, hogy megel\u0151zz\u00e9k a termikus fesz\u00fclts\u00e9get \u00e9s az ostyareped\u00e9st. Csak a biztons\u00e1gos h\u0151m\u00e9rs\u00e9klet el\u00e9r\u00e9s\u00e9t k\u00f6vet\u0151en t\u00e1vol\u00edtj\u00e1k el a reaktorb\u00f3l az osty\u00e1kat.<\/p>\n\n\n\n

    4. Hibat\u00edpusok \u00e9s kih\u00edv\u00e1sok<\/h2>\n\n\n\n

    A SiC epitaxia sz\u00e1mos kritikus kih\u00edv\u00e1ssal n\u00e9z szembe a hib\u00e1k ellen\u0151rz\u00e9se ter\u00e9n:<\/p>\n\n\n\n

    Hiba t\u00edpusa<\/th>Ok<\/th>A k\u00e9sz\u00fcl\u00e9kre gyakorolt hat\u00e1s<\/th><\/tr><\/thead>
    H\u00e1romsz\u00f6g alak\u00fa hib\u00e1k<\/td>Szubsztr\u00e1t r\u00e9szecsk\u00e9k, karcol\u00e1sok, 3C-SiC z\u00e1rv\u00e1nyok<\/td>Cs\u00f6kkenti a hozamot \u00e9s a megb\u00edzhat\u00f3s\u00e1got<\/td><\/tr>
    R\u00e9pa hib\u00e1k<\/td>Sz\u00e9nz\u00e1rv\u00e1nyok vagy szubsztr\u00e1thib\u00e1k<\/td>Fel\u00fclet \u00e9rdess\u00e9ge, lokaliz\u00e1lt hib\u00e1k<\/td><\/tr>
    Polyt\u00edpus befogad\u00e1sa<\/td>3C-SiC szemcs\u00e9k<\/td>Megzavarja az egykrist\u00e1ly integrit\u00e1s\u00e1t<\/td><\/tr>
    Al\u00e1t\u00e9t \u00f6r\u00f6kl\u00f6tt hib\u00e1k<\/td>Baz\u00e1lis s\u00edkbeli elmozdul\u00e1sok (BPD), menetes sz\u00e9ls\u0151 elmozdul\u00e1sok (TED)<\/td>A BPD nagy mez\u0151k eset\u00e9n \u00e1tv\u00e1ltozhat halmoz\u00f3d\u00e1si hib\u00e1kk\u00e1, ami n\u00f6veli a bekapcsol\u00e1si ellen\u00e1ll\u00e1st.<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

    Az optimaliz\u00e1lt step-flow n\u00f6veked\u00e9s \u00e9s a gondos szubsztr\u00e1t-el\u0151k\u00e9sz\u00edt\u00e9s r\u00e9szben megakad\u00e1lyozhatja a BPD-k terjed\u00e9s\u00e9t \u00e9s cs\u00f6kkentheti azok hat\u00e1s\u00e1t.<\/p>\n\n\n\n

    5. Ipari trendek<\/h2>\n\n\n\n
      \n
    1. Nagyobb ostyam\u00e9retek<\/strong>: \u00c1t\u00e1ll\u00e1s a 100 mm-es osty\u00e1kr\u00f3l a 150 mm-es \u00e9s 200 mm-es osty\u00e1kra az egykrist\u00e1lyos felhaszn\u00e1l\u00e1s jav\u00edt\u00e1sa \u00e9rdek\u00e9ben.<\/li>\n\n\n\n
    2. Alacsonyabb hibas\u0171r\u0171s\u00e9g<\/strong>: A h\u0151m\u00e9rs\u00e9klet, a nyom\u00e1s, a Si\/C ar\u00e1ny \u00e9s a prekurzor kiv\u00e1laszt\u00e1s\u00e1nak optimaliz\u00e1l\u00e1sa a BPD-k \u00e9s a h\u00e1romsz\u00f6g alak\u00fa hib\u00e1k minimaliz\u00e1l\u00e1sa \u00e9rdek\u00e9ben.<\/li>\n\n\n\n
    3. Jav\u00edtott doppingellen\u0151rz\u00e9s<\/strong>: K\u00fcl\u00f6n\u00f6sen a P-t\u00edpus\u00fa adal\u00e9kol\u00e1shoz az egyenletess\u00e9g \u00e9s a hat\u00e9konys\u00e1g el\u00e9r\u00e9se \u00e9rdek\u00e9ben.<\/li>\n\n\n\n
    4. Magas n\u00f6veked\u00e9si r\u00e1ta<\/strong>: A >30 \u00b5m\/h n\u00f6veked\u00e9s felt\u00e1r\u00e1sa a min\u0151s\u00e9g fenntart\u00e1sa mellett olyan fejlett prekurzorok haszn\u00e1lat\u00e1val, mint a SiHCl\u2083 (TCS).<\/li>\n\n\n\n
    5. Helysz\u00edni megfigyel\u00e9s<\/strong>: L\u00e9zerinterferometria, optikai pirometria \u00e9s ellipszometria a n\u00f6veked\u00e9s val\u00f3s idej\u0171 nyomon k\u00f6vet\u00e9s\u00e9re.<\/li>\n\n\n\n
    6. T\u00f6bbr\u00e9teg\u0171 szerkezetek<\/strong>: Az N+\/N-\/P-well\/N+ r\u00e9tegek prec\u00edz epitaxi\u00e1ja olyan \u00f6sszetett eszk\u00f6z\u00f6kh\u00f6z, mint a MOSFET-ek \u00e9s IGBT-k.<\/li>\n<\/ol>\n\n\n\n

      6. K\u00f6vetkeztet\u00e9s<\/h2>\n\n\n\n

      A SiC epitaxi\u00e1lis n\u00f6veszt\u00e9se 4H-SiC Si-face off-axis szubsztr\u00e1tokon a nagy teljes\u00edtm\u00e9ny\u0171 teljes\u00edtm\u00e9ny\u0171 eszk\u00f6z\u00f6k alapj\u00e1t k\u00e9pezi. A szubsztr\u00e1t orient\u00e1ci\u00f3j\u00e1nak, a tengelyen k\u00edv\u00fcli kialak\u00edt\u00e1snak, a step-flow n\u00f6veked\u00e9snek \u00e9s a CVD param\u00e9terek pontos szab\u00e1lyoz\u00e1s\u00e1nak elsaj\u00e1t\u00edt\u00e1sa elengedhetetlen az alacsony hib\u00e1j\u00fa, egyenletes \u00e9s kiv\u00e1l\u00f3 min\u0151s\u00e9g\u0171 epitaxi\u00e1lis r\u00e9tegek el\u00e9r\u00e9s\u00e9hez. Az ostyam\u00e9ret, a n\u00f6veked\u00e9si sebess\u00e9g, a hib\u00e1k ellen\u0151rz\u00e9se \u00e9s a helysz\u00edni megfigyel\u00e9s ter\u00e9n el\u00e9rt folyamatos el\u0151rel\u00e9p\u00e9s a SiC-eszk\u00f6z\u00f6k nagyobb teljes\u00edtm\u00e9nye, alacsonyabb k\u00f6lts\u00e9ge \u00e9s sz\u00e9lesebb k\u00f6r\u0171 alkalmaz\u00e1sa az energiahat\u00e9kony elektronik\u00e1ban.<\/p>","protected":false},"excerpt":{"rendered":"

      Silicon carbide (SiC) has emerged as a critical material in high-performance power semiconductor devices due to its wide bandgap, high thermal conductivity, high breakdown field, and high electron drift velocity. These properties make SiC power devices ideal for electric vehicles, energy storage systems, and renewable energy inverters, offering lower conduction losses and higher efficiency compared […]<\/p>\n","protected":false},"author":2,"featured_media":8803,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"_uag_custom_page_level_css":"","footnotes":""},"categories":[12,27],"tags":[1166,2175,2173,2178,1305,1306,1819,1313,1240,1048,2185,2183,2184,1338,1781,2182,2181,1340,2177,1807,2176,2180,2170,2171,1056,1776,1111,2174,2172,2179],"class_list":["post-8802","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-news","category-companynews","tag-4h-sic","tag-atomic-steps","tag-c-face","tag-carrot-defects","tag-chemical-vapor-deposition","tag-cvd","tag-defect-control","tag-doping-control","tag-epitaxial-growth","tag-epitaxy","tag-high-performance-semiconductor","tag-high-temperature-growth","tag-igbt","tag-jbs-diode","tag-large-diameter-wafer-2","tag-layer-uniformity","tag-low-pressure-growth","tag-mosfet","tag-n-type-doping","tag-off-axis-substrate","tag-p-type-doping","tag-polytype-inclusion","tag-power-device","tag-si-face","tag-sic","tag-sic-power-device","tag-silicon-carbide","tag-step-flow-growth","tag-substrate-preparation","tag-triangular-defects"],"acf":[],"uagb_featured_image_src":{"full":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1.webp",600,600,false],"thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1-150x150.webp",150,150,true],"medium":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1-300x300.webp",300,300,true],"medium_large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1.webp",600,600,false],"large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1.webp",600,600,false],"1536x1536":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1.webp",600,600,false],"2048x2048":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1.webp",600,600,false],"trp-custom-language-flag":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1-12x12.webp",12,12,true],"woocommerce_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1-300x300.webp",300,300,true],"woocommerce_single":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1.webp",600,600,false],"woocommerce_gallery_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1-100x100.webp",100,100,true]},"uagb_author_info":{"display_name":"lydia","author_link":"https:\/\/www.sic-wafers.com\/hu\/author\/lydia\/"},"uagb_comment_info":0,"uagb_excerpt":"Silicon carbide (SiC) has emerged as a critical material in high-performance power semiconductor devices due to its wide bandgap, high thermal conductivity, high breakdown field, and high electron drift velocity. These properties make SiC power devices ideal for electric vehicles, energy storage systems, and renewable energy inverters, offering lower conduction losses and higher efficiency compared…","_links":{"self":[{"href":"https:\/\/www.sic-wafers.com\/hu\/wp-json\/wp\/v2\/posts\/8802","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.sic-wafers.com\/hu\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.sic-wafers.com\/hu\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/hu\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/hu\/wp-json\/wp\/v2\/comments?post=8802"}],"version-history":[{"count":1,"href":"https:\/\/www.sic-wafers.com\/hu\/wp-json\/wp\/v2\/posts\/8802\/revisions"}],"predecessor-version":[{"id":8804,"href":"https:\/\/www.sic-wafers.com\/hu\/wp-json\/wp\/v2\/posts\/8802\/revisions\/8804"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/hu\/wp-json\/wp\/v2\/media\/8803"}],"wp:attachment":[{"href":"https:\/\/www.sic-wafers.com\/hu\/wp-json\/wp\/v2\/media?parent=8802"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/hu\/wp-json\/wp\/v2\/categories?post=8802"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/hu\/wp-json\/wp\/v2\/tags?post=8802"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}