{"id":8224,"date":"2025-12-17T13:59:29","date_gmt":"2025-12-17T05:59:29","guid":{"rendered":"https:\/\/www.sic-wafers.com\/?post_type=product&p=8224"},"modified":"2026-02-24T08:56:02","modified_gmt":"2026-02-24T00:56:02","slug":"12-inch-300mm-4h-6h-sic-single-crystal-silicon-carbide-wafer-for-power-electronics-led-applications","status":"publish","type":"product","link":"https:\/\/www.sic-wafers.com\/hu\/product\/12-inch-300mm-4h-6h-sic-single-crystal-silicon-carbide-wafer-for-power-electronics-led-applications\/","title":{"rendered":"12 h\u00fcvelykes 300 mm-es 4H\/6H SiC egykrist\u00e1lyos szil\u00edciumkarbid ostya teljes\u00edtm\u00e9nyelektronikai \u00e9s LED alkalmaz\u00e1sokhoz"},"content":{"rendered":"

A ZMSH 12 h\u00fcvelykes (300 mm) SiC egykrist\u00e1lyos osty\u00e1k nagy tisztas\u00e1g\u00fa, sz\u00e9les s\u00e1vsz\u00e9less\u00e9g\u0171 f\u00e9lvezet\u0151k, amelyeket fizikai g\u0151ztranszport (PVT) m\u00f3dszerrel \u00e1ll\u00edtanak el\u0151. A kiv\u00e1l\u00f3 elektromos, termikus \u00e9s mechanikai tulajdons\u00e1gokkal rendelkez\u0151 SiC osty\u00e1k ide\u00e1lisak nagy teljes\u00edtm\u00e9ny\u0171, nagyfesz\u00fclts\u00e9g\u0171 \u00e9s nagyfrekvenci\u00e1s alkalmaz\u00e1sokhoz, valamint GaN-alap\u00fa LED- \u00e9s l\u00e9zerdi\u00f3da szubsztr\u00e1tumokhoz.<\/p>\n

\"\" \"\" \"\"<\/p>\n

A 12 h\u00fcvelykes osty\u00e1k jellemz\u0151i rendk\u00edv\u00fcl alacsony baz\u00e1lis s\u00edkbeli elmozdul\u00e1s-s\u0171r\u0171s\u00e9g (BPD)<\/strong>, magas h\u0151vezet\u0151 k\u00e9pess\u00e9g \u00e9s pontos krist\u00e1lyos orient\u00e1ci\u00f3, ami biztos\u00edtja az eszk\u00f6z kiv\u00e1l\u00f3 teljes\u00edtm\u00e9ny\u00e9t, megb\u00edzhat\u00f3s\u00e1g\u00e1t \u00e9s reproduk\u00e1lhat\u00f3s\u00e1g\u00e1t.<\/p>\n

F\u0151 jellemz\u0151k<\/strong><\/h3>\n
\n
\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Ingatlan<\/th>\n4H-SiC<\/th>\n6H-SiC<\/th>\n<\/tr>\n<\/thead>\n
Krist\u00e1lyszerkezet<\/td>\nHatsz\u00f6glet\u0171<\/td>\nHatsz\u00f6glet\u0171<\/td>\n<\/tr>\n
R\u00e1cs\u00e1lland\u00f3<\/td>\na=3,08 \u00c5, c=10,05 \u00c5<\/td>\na=3,08 \u00c5, c=15,12 \u00c5<\/td>\n<\/tr>\n
S\u00e1vh\u00e9zag<\/td>\n3,23 eV<\/td>\n3,02 eV<\/td>\n<\/tr>\n
Kem\u00e9nys\u00e9g (Mohs)<\/td>\n9.2<\/td>\n9.2<\/td>\n<\/tr>\n
H\u0151vezet\u0151 k\u00e9pess\u00e9g (N-t\u00edpus\u00fa, 0,02 \u03a9-cm)<\/td>\na~4,2 W\/cm-K, c~3,7 W\/cm-K<\/td>\na~4,6 W\/cm-K, c~3,2 W\/cm-K<\/td>\n<\/tr>\n
H\u0151t\u00e1gul\u00e1si egy\u00fctthat\u00f3<\/td>\n4-5\u00d710-\u2076\/K<\/td>\n4-5\u00d710-\u2076\/K<\/td>\n<\/tr>\n
Dielektromos \u00e1lland\u00f3<\/td>\n~9.66<\/td>\n~9.66<\/td>\n<\/tr>\n
Ellen\u00e1ll\u00e1s<\/td>\n0,015-0,028 \u03a9-cm (N-t\u00edpus\u00fa)<\/td>\n>1\u00d710\u2075 \u03a9-cm (f\u00e9lig szigetel\u0151)<\/td>\n<\/tr>\n
Orient\u00e1ci\u00f3<\/td>\n, 4\u00b0 tengelyen k\u00edv\u00fcl<\/td>\n, 4\u00b0 tengelyen k\u00edv\u00fcl<\/td>\n<\/tr>\n
Pol\u00edroz\u00e1s<\/td>\nEgyoldalas vagy k\u00e9toldalas<\/td>\nEgyoldalas vagy k\u00e9toldalas<\/td>\n<\/tr>\n
Fel\u00fcleti \u00e9rdess\u00e9g<\/td>\nRa \u2264 5\u00c5<\/td>\nRa \u2264 5\u00c5<\/td>\n<\/tr>\n
TTV<\/td>\n\u226415 \u00b5m<\/td>\n\u226415 \u00b5m<\/td>\n<\/tr>\n
\u00cdj\/Warp<\/td>\n\u226480 \u00b5m<\/td>\n\u226480 \u00b5m<\/td>\n<\/tr>\n
Vastags\u00e1g<\/td>\n0,35-1,0 mm (testreszabhat\u00f3)<\/td>\n0,35-1,0 mm (testreszabhat\u00f3)<\/td>\n<\/tr>\n
Monokrist\u00e1lyos z\u00f3na<\/td>\n\u2265290 mm<\/td>\n\u2265290 mm<\/td>\n<\/tr>\n
EPD (Etch Pit Density)<\/td>\n\u22641\/cm\u00b2<\/td>\n\u22641\/cm\u00b2<\/td>\n<\/tr>\n
Chiping<\/td>\n\u22642 mm<\/td>\n\u22642 mm<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n

Alkalmaz\u00e1sok<\/strong><\/h3>\n

1. Teljes\u00edtm\u00e9nyelektronika:<\/strong><\/p>\n

    \n
  • \n

    SiC MOSFET-ek, PiN-di\u00f3d\u00e1k, Schottky-di\u00f3d\u00e1k (SBD), JBS-di\u00f3d\u00e1k, IGBT-k \u00e9s SiC BJT-k.<\/p>\n<\/li>\n

  • \n

    Nagy hat\u00e9konys\u00e1g\u00fa teljes\u00edtm\u00e9nymodulok kisebb m\u00e9ret, k\u00f6nnyebb s\u00faly \u00e9s cs\u00f6kkentett energiavesztes\u00e9g<\/strong> a szil\u00edciumhoz k\u00e9pest.<\/p>\n<\/li>\n

  • \n

    T\u00e1mogatja a magas fesz\u00fclts\u00e9gen (3 kV-12 kV) \u00e9s magas h\u0151m\u00e9rs\u00e9kleten m\u0171k\u00f6d\u0151 eszk\u00f6z\u00f6ket.<\/p>\n<\/li>\n<\/ul>\n

    2. Optoelektronikai eszk\u00f6z\u00f6k:<\/strong><\/p>\n

      \n
    • \n

      Szubsztr\u00e1tum a GaN-alap\u00fa LED-ek \u00e9s l\u00e9zerdi\u00f3d\u00e1k<\/strong>.<\/p>\n<\/li>\n

    • \n

      A GaN r\u00e9tegekkel val\u00f3 kiv\u00e1l\u00f3 r\u00e1csilleszt\u00e9s \u00e9s termikus kompatibilit\u00e1s jav\u00edtja a GaN r\u00e9tegeket. f\u00e9nykivon\u00e1si hat\u00e9konys\u00e1g<\/strong> \u00e9s h\u0151elvezet\u00e9s<\/strong>.<\/p>\n<\/li>\n

    • \n

      Lehet\u0151v\u00e9 teszi a f\u00fcgg\u0151leges eszk\u00f6zszerkezeteket \u00e1ramdiff\u00fazi\u00f3s r\u00e9teg n\u00e9lk\u00fcl.<\/p>\n<\/li>\n<\/ul>\n

      3. Kutat\u00e1s \u00e9s fejlett eszk\u00f6z\u00f6k:<\/strong><\/p>\n

        \n
      • \n

        Alkalmas k\u00eds\u00e9rleti kutat\u00e1sra a k\u00f6vetkez\u0151 ter\u00fcleteken BPD-cs\u00f6kkent\u00e9s, nagyfesz\u00fclts\u00e9g\u0171 eszk\u00f6z\u00f6k \u00e9s a k\u00f6vetkez\u0151 gener\u00e1ci\u00f3s SiC elektronika<\/strong>.<\/p>\n<\/li>\n

      • \n

        Nagyfrekvenci\u00e1s \u00e9s magas h\u0151m\u00e9rs\u00e9klet\u0171 elektronikus eszk\u00f6z\u00f6kben haszn\u00e1latos.<\/p>\n<\/li>\n<\/ul>\n

        El\u0151ny\u00f6k<\/strong><\/h3>\n
          \n
        1. \n

          Alacsony BPD-s\u0171r\u0171s\u00e9g:<\/strong><\/p>\n

            \n
          • \n

            Az optimaliz\u00e1lt PVT-n\u00f6veszt\u00e9s, a magk\u00f6t\u00e9s \u00e9s a grafitt\u00e9gely kiv\u00e1laszt\u00e1sa cs\u00f6kkenti a baz\u00e1lis s\u00edkbeli diszlok\u00e1ci\u00f3kat a k\u00f6vetkez\u0151 \u00e9rt\u00e9kek al\u00e1 1000 cm-\u00b2<\/strong>, a nagy teljes\u00edtm\u00e9ny\u0171 \u00e9s nagyfesz\u00fclts\u00e9g\u0171 eszk\u00f6z\u00f6k megb\u00edzhat\u00f3s\u00e1g\u00e1nak jav\u00edt\u00e1sa.<\/p>\n<\/li>\n<\/ul>\n<\/li>\n

          • \n

            Kiv\u00e1l\u00f3 termikus \u00e9s elektromos teljes\u00edtm\u00e9ny:<\/strong><\/p>\n

              \n
            • \n

              A nagy h\u0151vezet\u0151 k\u00e9pess\u00e9g hat\u00e9kony h\u0151elvezet\u00e9st biztos\u00edt.<\/p>\n<\/li>\n

            • \n

              A sz\u00e9les s\u00e1vsz\u00e9less\u00e9g \u00e9s a nagy elektronmozg\u00e9konys\u00e1g minimaliz\u00e1lja az energiavesztes\u00e9get magas fesz\u00fclts\u00e9g \u00e9s magas h\u0151m\u00e9rs\u00e9klet mellett.<\/p>\n<\/li>\n<\/ul>\n<\/li>\n

            • \n

              Nagy, 12 h\u00fcvelykes \u00e1tm\u00e9r\u0151j\u0171:<\/strong><\/p>\n

                \n
              • \n

                Lehet\u0151v\u00e9 teszi a t\u00e1pegys\u00e9gek \u00e9s LED szubsztr\u00e1tumok t\u00f6meggy\u00e1rt\u00e1s\u00e1t.<\/p>\n<\/li>\n

              • \n

                Testreszabhat\u00f3 vastags\u00e1g, ellen\u00e1ll\u00e1s \u00e9s orient\u00e1ci\u00f3 az egyedi alkalmaz\u00e1sokhoz.<\/p>\n<\/li>\n<\/ul>\n<\/li>\n

              • \n

                Kiv\u00e1l\u00f3 min\u0151s\u00e9g\u0171 fel\u00fcletkezel\u00e9s:<\/strong><\/p>\n

                  \n
                • \n

                  Az egy- vagy k\u00e9toldalas pol\u00edrozott osty\u00e1k rendk\u00edv\u00fcl alacsony \u00e9rdess\u00e9ggel (Ra \u2264 5\u00c5) biztos\u00edtj\u00e1k az egyenletes epitaxi\u00e1lis n\u00f6veked\u00e9st.<\/p>\n<\/li>\n<\/ul>\n<\/li>\n

                • \n

                  Tisztaszobai csomagol\u00e1s:<\/strong><\/p>\n

                    \n
                  • \n

                    Minden egyes ostya egyenk\u00e9nt csomagolva egy 100 fokozat\u00fa tiszta k\u00f6rnyezet<\/strong> a szennyez\u0151d\u00e9s megel\u0151z\u00e9se \u00e9rdek\u00e9ben.<\/p>\n<\/li>\n<\/ul>\n<\/li>\n<\/ol>\n

                    GYIK<\/strong><\/h3>\n

                    1. k\u00e9rd\u00e9s: Mekkora a ZMSH 12 h\u00fcvelykes SiC osty\u00e1k tipikus BPD-s\u0171r\u0171s\u00e9ge?<\/strong>
                    A1:<\/strong> A baz\u00e1lis s\u00edkbeli diszlok\u00e1ci\u00f3 s\u0171r\u0171s\u00e9g\u00e9t az al\u00e1bbiakban szab\u00e1lyozz\u00e1k 1000 cm-\u00b2<\/strong> optimaliz\u00e1lt n\u00f6veked\u00e9si, h\u0171t\u00e9si \u00e9s magk\u00f6t\u00e9si folyamatok r\u00e9v\u00e9n, biztos\u00edtva a kiv\u00e1l\u00f3 megb\u00edzhat\u00f3s\u00e1got.<\/p>\n

                    2. k\u00e9rd\u00e9s: Testreszabhat\u00f3-e az ostyavastags\u00e1g, a t\u00e1jol\u00e1s vagy az ellen\u00e1ll\u00e1s?<\/strong>
                    A2:<\/strong> Igen. A vastags\u00e1g (0,35-1,0 mm), a tengelyen k\u00edv\u00fcli orient\u00e1ci\u00f3 ( 4\u00b0 vagy egy\u00e9ni) \u00e9s az ellen\u00e1ll\u00e1s (N-t\u00edpus\u00fa 0,015-0,028 \u03a9-cm vagy f\u00e9lig szigetel\u0151 >1\u00d710\u2075 \u03a9-cm) mind testre szabhat\u00f3.<\/p>\n

                    3. k\u00e9rd\u00e9s: Milyen el\u0151ny\u00f6kkel j\u00e1r a SiC szubsztr\u00e1t a GaN-alap\u00fa LED-alkalmaz\u00e1sok sz\u00e1m\u00e1ra?<\/strong>
                    A3:<\/strong> A SiC biztos\u00edtja a r\u00e1csszerkezet \u00e9s a h\u0151kompatibilit\u00e1st a GaN-nel, lehet\u0151v\u00e9 teszi a f\u00fcgg\u0151leges eszk\u00f6zszerkezetet, jav\u00edtja a f\u00e9nykivon\u00e1s hat\u00e9konys\u00e1g\u00e1t, \u00e9s jav\u00edtja a h\u0151kezel\u00e9st, ami hosszabb \u00e9lettartamot tesz lehet\u0151v\u00e9.<\/p>\n

                    ZMSH k\u00f6telezetts\u00e9gv\u00e1llal\u00e1s<\/strong><\/h3>\n

                    A ZMSH elk\u00f6telezett a k\u00f6vetkez\u0151k biztos\u00edt\u00e1sa mellett nagy teljes\u00edtm\u00e9ny\u0171 12 h\u00fcvelykes SiC osty\u00e1k<\/strong> rendk\u00edv\u00fcl alacsony diszlok\u00e1ci\u00f3s s\u0171r\u0171s\u00e9ggel \u00e9s reproduk\u00e1lhat\u00f3 min\u0151s\u00e9ggel. A mi osty\u00e1ink ide\u00e1lisak a k\u00f6vetkez\u0151kh\u00f6z teljes\u00edtm\u00e9nyelektronika, optoelektronika \u00e9s \u00faj gener\u00e1ci\u00f3s f\u00e9lvezet\u0151k kutat\u00e1sa<\/strong>, testreszabhat\u00f3 specifik\u00e1ci\u00f3kkal az ipari \u00e9s kutat\u00e1si ig\u00e9nyek kiel\u00e9g\u00edt\u00e9s\u00e9re.<\/p>","protected":false},"excerpt":{"rendered":"

                    A ZMSH 12 h\u00fcvelykes (300 mm) SiC egykrist\u00e1lyos osty\u00e1k nagy tisztas\u00e1g\u00fa, sz\u00e9les s\u00e1vsz\u00e9less\u00e9g\u0171 f\u00e9lvezet\u0151k, amelyeket fizikai g\u0151ztranszport (PVT) m\u00f3dszerrel \u00e1ll\u00edtanak el\u0151. A kiv\u00e1l\u00f3 elektromos, termikus \u00e9s mechanikai tulajdons\u00e1gokkal rendelkez\u0151 SiC osty\u00e1k ide\u00e1lisak nagy teljes\u00edtm\u00e9ny\u0171, nagyfesz\u00fclts\u00e9g\u0171 \u00e9s nagyfrekvenci\u00e1s alkalmaz\u00e1sokhoz, valamint GaN-alap\u00fa LED- \u00e9s l\u00e9zerdi\u00f3da szubsztr\u00e1tumokhoz.<\/p>","protected":false},"featured_media":8228,"comment_status":"open","ping_status":"closed","template":"","meta":{"_acf_changed":false,"_uag_custom_page_level_css":""},"product_brand":[],"product_cat":[1091,1094,1083],"product_tag":[1535,1536,1534,1532,1533,1530,1531],"class_list":{"0":"post-8224","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-4h-n","7":"product_cat-6h-n","8":"product_cat-sic-wafer","9":"product_tag-12-inch-4h-sic","10":"product_tag-12-inch-6h-sic","11":"product_tag-12-inch-sic-ingot","12":"product_tag-12-inch-sic-single-crystal","13":"product_tag-12-inch-sic-substrate","14":"product_tag-12-inch-sic-wafer","15":"product_tag-12-inch-silicon-carbide","17":"first","18":"instock","19":"shipping-taxable","20":"product-type-simple"},"acf":[],"uagb_featured_image_src":{"full":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/12-Inch-300mm-4H6H-SiC-Single-Crystal-Silicon-Carbide-Wafer-for-Power-LED-Devices1.webp",1000,1000,false],"thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/12-Inch-300mm-4H6H-SiC-Single-Crystal-Silicon-Carbide-Wafer-for-Power-LED-Devices1-150x150.webp",150,150,true],"medium":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/12-Inch-300mm-4H6H-SiC-Single-Crystal-Silicon-Carbide-Wafer-for-Power-LED-Devices1-300x300.webp",300,300,true],"medium_large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/12-Inch-300mm-4H6H-SiC-Single-Crystal-Silicon-Carbide-Wafer-for-Power-LED-Devices1-768x768.webp",768,768,true],"large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/12-Inch-300mm-4H6H-SiC-Single-Crystal-Silicon-Carbide-Wafer-for-Power-LED-Devices1.webp",800,800,false],"1536x1536":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/12-Inch-300mm-4H6H-SiC-Single-Crystal-Silicon-Carbide-Wafer-for-Power-LED-Devices1.webp",1000,1000,false],"2048x2048":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/12-Inch-300mm-4H6H-SiC-Single-Crystal-Silicon-Carbide-Wafer-for-Power-LED-Devices1.webp",1000,1000,false],"trp-custom-language-flag":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/12-Inch-300mm-4H6H-SiC-Single-Crystal-Silicon-Carbide-Wafer-for-Power-LED-Devices1.webp",12,12,false],"woocommerce_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/12-Inch-300mm-4H6H-SiC-Single-Crystal-Silicon-Carbide-Wafer-for-Power-LED-Devices1-300x300.webp",300,300,true],"woocommerce_single":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/12-Inch-300mm-4H6H-SiC-Single-Crystal-Silicon-Carbide-Wafer-for-Power-LED-Devices1-600x600.webp",600,600,true],"woocommerce_gallery_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/12-Inch-300mm-4H6H-SiC-Single-Crystal-Silicon-Carbide-Wafer-for-Power-LED-Devices1-100x100.webp",100,100,true]},"uagb_author_info":{"display_name":"lydia","author_link":"https:\/\/www.sic-wafers.com\/hu\/author\/"},"uagb_comment_info":0,"uagb_excerpt":"ZMSH 12-inch (300mm) SiC single crystal wafers are high-purity, wide-bandgap semiconductors produced via Physical Vapor Transport (PVT) method. With excellent electrical, thermal, and mechanical properties, SiC wafers are ideal for high-power, high-voltage, and high-frequency applications, as well as GaN-based LED and laser diode substrates.","_links":{"self":[{"href":"https:\/\/www.sic-wafers.com\/hu\/wp-json\/wp\/v2\/product\/8224","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.sic-wafers.com\/hu\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.sic-wafers.com\/hu\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/hu\/wp-json\/wp\/v2\/comments?post=8224"}],"version-history":[{"count":3,"href":"https:\/\/www.sic-wafers.com\/hu\/wp-json\/wp\/v2\/product\/8224\/revisions"}],"predecessor-version":[{"id":8233,"href":"https:\/\/www.sic-wafers.com\/hu\/wp-json\/wp\/v2\/product\/8224\/revisions\/8233"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/hu\/wp-json\/wp\/v2\/media\/8228"}],"wp:attachment":[{"href":"https:\/\/www.sic-wafers.com\/hu\/wp-json\/wp\/v2\/media?parent=8224"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/hu\/wp-json\/wp\/v2\/product_brand?post=8224"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/hu\/wp-json\/wp\/v2\/product_cat?post=8224"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/hu\/wp-json\/wp\/v2\/product_tag?post=8224"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}