{"id":7864,"date":"2025-12-05T11:15:11","date_gmt":"2025-12-05T03:15:11","guid":{"rendered":"https:\/\/www.sic-wafers.com\/?post_type=product&p=7864"},"modified":"2025-12-08T15:12:13","modified_gmt":"2025-12-08T07:12:13","slug":"12-inch-4h-n-sic-substrate-prime-grade-300mm-silicon-carbide-wafer-for-high-power-high-temperature-devices","status":"publish","type":"product","link":"https:\/\/www.sic-wafers.com\/ja\/product\/12-inch-4h-n-sic-substrate-prime-grade-300mm-silicon-carbide-wafer-for-high-power-high-temperature-devices\/","title":{"rendered":"\u5927\u96fb\u529b\u30fb\u9ad8\u6e29\u30c7\u30d0\u30a4\u30b9\u75284H-N SiC\u70ad\u5316\u30b1\u30a4\u7d20\u30a6\u30a7\u30cf\u30fc"},"content":{"rendered":"

The 12-inch (300mm) silicon carbide substrate is a next-generation large-diameter wafer engineered for high-performance semiconductor manufacturing. Based on 4H-N SiC single-crystal technology, this prime-grade substrate offers exceptional electrical, thermal, and mechanical properties, making it ideal for high-power, high-frequency, and high-temperature device applications.
With the transition from 6-inch to 8-inch and now 12-inch platforms, SiC wafers significantly improve chip yield, lower cost per device, and accelerate mass production of power electronics.<\/p>\n

\"12\u30a4\u30f3\u30c1\u30fb\u30b7\u30c3\u30af\u30a6\u30a7\u30cf\u30fc\"
12\u30a4\u30f3\u30c1\u30fb\u30b7\u30c3\u30af\u30a6\u30a7\u30cf\u30fc<\/figcaption><\/figure>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
\u30d1\u30e9\u30e1\u30fc\u30bf<\/strong><\/th>\nZeroMPD Production Grade (Z Grade)<\/strong><\/th>\nStandard Production Grade (P Grade)<\/strong><\/th>\nDummy Grade (D Grade)<\/strong><\/th>\n<\/tr>\n<\/thead>\n
\u76f4\u5f84<\/strong><\/td>\n300 mm<\/td>\n300 mm<\/td>\n300 mm<\/td>\n<\/tr>\n
\u539a\u3055<\/strong><\/td>\n750\u03bcm \u00b1 15\u03bcm<\/td>\n750\u03bcm \u00b1 25\u03bcm<\/td>\n750\u03bcm \u00b1 25\u03bcm<\/td>\n<\/tr>\n
\u30a6\u30a7\u30cf\u30fc\u306e\u5411\u304d<\/strong><\/td>\nOff axis: 4.0\u00b0 towards <1120> \u00b10.5\u00b0 for 4H-N<\/td>\nOn axis: <0001> \u00b10.5\u00b0 for 4H-SI<\/td>\n\u2014<\/td>\n<\/tr>\n
\u30de\u30a4\u30af\u30ed\u30d1\u30a4\u30d7\u5bc6\u5ea6\uff08MPD\uff09<\/strong><\/td>\n4H-N: \u22640.4 cm\u207b\u00b2; 4H-SI: \u22645 cm\u207b\u00b2<\/td>\n4H-N: \u22644 cm\u207b\u00b2; 4H-SI: \u226410 cm\u207b\u00b2<\/td>\n4H-N: \u226425 cm\u207b\u00b2; 4H-SI: \u226425 cm\u207b\u00b2<\/td>\n<\/tr>\n
\u62b5\u6297\u7387<\/strong><\/td>\n4H-N: 0.015 ~ 0.024 \u03a9\u00b7cm<\/td>\n4H-N: 0.015 ~ 0.028 \u03a9\u00b7cm<\/td>\n4H-SI: \u22651E10 \u03a9\u00b7cm; 4H-SI: \u22651E5 \u03a9\u00b7cm<\/td>\n<\/tr>\n
\u30d7\u30e9\u30a4\u30de\u30ea\u30fc\u30fb\u30d5\u30e9\u30c3\u30c8\u30fb\u30aa\u30ea\u30a8\u30f3\u30c6\u30fc\u30b7\u30e7\u30f3<\/strong><\/td>\n{10-10} \u00b15.0\u00b0<\/td>\n{10-10} \u00b15.0\u00b0<\/td>\n{10-10} \u00b15.0\u00b0<\/td>\n<\/tr>\n
\u30d7\u30e9\u30a4\u30de\u30ea\u30fc\u30fb\u30d5\u30e9\u30c3\u30c8\u306e\u9577\u3055<\/strong><\/td>\nN\/A<\/td>\nNotch<\/td>\nNotch<\/td>\n<\/tr>\n
Edge Exclusion<\/strong><\/td>\n3 mm<\/td>\n3 mm<\/td>\n3 mm<\/td>\n<\/tr>\n
LTV\/TTV\/Bow\/Warp<\/strong><\/td>\n\u22645\u03bcm\/ \u226415\u03bcm\/ \u226435\u03bcm\/ \u226455\u03bcm<\/td>\n\u22645\u03bcm\/ \u226415\u03bcm\/ \u226435\u03bcm\/ \u226455\u03bcm<\/td>\n\u22645\u03bcm\/ \u226415\u03bcm\/ \u226435\u03bcm\/ \u226455\u03bcm<\/td>\n<\/tr>\n
\u7c97\u3055<\/strong><\/td>\nPolish Ra \u22641 nm; CMP Ra \u22640.2 nm<\/td>\nRa \u22640.5 nm<\/td>\nRa \u22640.5 nm<\/td>\n<\/tr>\n
Edge Cracks by High Intensity Light<\/strong><\/td>\n\u306a\u3057<\/td>\n\u306a\u3057<\/td>\nCumulative length \u2264 20 mm, single length \u2264 2 mm<\/td>\n<\/tr>\n
Hex Plates by High Intensity Light<\/strong><\/td>\n\u306a\u3057<\/td>\n\u306a\u3057<\/td>\nCumulative area \u2264 0.1%<\/td>\n<\/tr>\n
Polytype Areas by High Intensity Light<\/strong><\/td>\n\u306a\u3057<\/td>\n\u306a\u3057<\/td>\nCumulative area \u2264 3%<\/td>\n<\/tr>\n
Visual Carbon Inclusions<\/strong><\/td>\n\u306a\u3057<\/td>\n\u306a\u3057<\/td>\nCumulative area \u2264 3%<\/td>\n<\/tr>\n
Silicon Surface Scratches<\/strong><\/td>\n\u306a\u3057<\/td>\n\u306a\u3057<\/td>\nCumulative length \u2264 1 \u00d7 wafer diameter<\/td>\n<\/tr>\n
Edge Chips by High Intensity Light<\/strong><\/td>\nNone permitted \u22650.2mm width and depth<\/td>\n7 allowed, \u22641 mm each<\/td>\n7 allowed, \u22641 mm each<\/td>\n<\/tr>\n
Threading Screw Dislocation (TSD)<\/strong><\/td>\n\u2264500 cm\u207b\u00b2<\/td>\nN\/A<\/td>\nN\/A<\/td>\n<\/tr>\n
Base Plane Dislocation (BPD)<\/strong><\/td>\n\u22641000 cm\u207b\u00b2<\/td>\nN\/A<\/td>\nN\/A<\/td>\n<\/tr>\n
Silicon Surface Contamination by High Intensity Light<\/strong><\/td>\n\u306a\u3057<\/td>\n\u306a\u3057<\/td>\n\u306a\u3057<\/td>\n<\/tr>\n
\u30d1\u30c3\u30b1\u30fc\u30b8\u30f3\u30b0<\/strong><\/td>\nMulti-wafer cassette or single wafer container<\/td>\nMulti-wafer cassette or single wafer container<\/td>\nMulti-wafer cassette or single wafer container<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

\u4e3b\u306a\u7279\u5fb4<\/strong><\/h2>\n

\u25cf Superior Thermal Management<\/strong><\/h3>\n

SiC provides thermal conductivity over three times that of silicon, enabling efficient heat dissipation in high-power systems such as EV inverters and industrial converters.<\/p>\n

\u25cf High Breakdown Electric Field<\/strong><\/h3>\n

The breakdown field strength of 4H-SiC is nearly an order of magnitude higher than silicon, supporting high-voltage and high-reliability applications.<\/p>\n

\u25cf Wide Bandgap Energy (3.26 eV)<\/strong><\/h3>\n

A broad bandgap enables stable operation under high temperature, high frequency, and harsh environmental conditions.<\/p>\n

\u25cf Outstanding Mechanical Properties<\/strong><\/h3>\n

Mohs hardness of 9.2 offers excellent wear resistance and mechanical robustness during device processing.<\/p>\n

\u25cf Chemical & Thermal Stability<\/strong><\/h3>\n

SiC maintains structural and electrical stability in corrosive, high-temperature, and high-stress manufacturing environments.<\/p>\n

\u25cf Large-Diameter Growth Technology<\/strong><\/h3>\n

Prime-grade 12-inch (300mm) wafers help customers increase throughput, optimize device design, and reduce long-term production costs.<\/p>\n

\u25cf Low Defect Density<\/strong><\/h3>\n

Advanced crystal growth and wafering technologies ensure uniformity, high epitaxial compatibility, and stable device performance.<\/p>\n

Main Application Areas<\/strong><\/h2>\n

1. Power Electronics<\/strong><\/h3>\n
    \n
  • \n

    SiC MOSFET<\/strong> for EV traction inverters, industrial drives, PV inverters<\/p>\n<\/li>\n

  • \n

    Schottky Barrier Diodes (SBDs)<\/strong> for high-efficiency rectification<\/p>\n<\/li>\n

  • \n

    Power modules<\/strong> operating in high-voltage and high-current environments<\/p>\n<\/li>\n<\/ul>\n

    2. RF & Microwave Devices<\/strong><\/h3>\n
      \n
    • \n

      RF power amplifiers for 5G base stations<\/strong><\/p>\n<\/li>\n

    • \n

      Microwave devices for radar, satellite communication<\/strong>, and phased-array systems<\/p>\n<\/li>\n<\/ul>\n

      3. New Energy Vehicles<\/strong><\/h3>\n
        \n
      • \n

        \u8eca\u8f09\u5145\u96fb\u5668\uff08OBC\uff09<\/p>\n<\/li>\n

      • \n

        Fast-charging power conversion modules<\/p>\n<\/li>\n

      • \n

        High-efficiency traction system components<\/p>\n<\/li>\n<\/ul>\n

        4. Industrial & Energy Infrastructure<\/strong><\/h3>\n
          \n
        • \n

          Smart grid HVDC systems<\/p>\n<\/li>\n

        • \n

          High-voltage inverters and power control equipment<\/p>\n<\/li>\n

        • \n

          Industrial automation & robotics<\/p>\n<\/li>\n<\/ul>\n

          5. Aerospace & Harsh-Environment Electronics<\/strong><\/h3>\n
            \n
          • \n

            \u9ad8\u6e29\u30a8\u30ec\u30af\u30c8\u30ed\u30cb\u30af\u30b9<\/p>\n<\/li>\n

          • \n

            Radiation-resistant and extreme-environment devices<\/p>\n<\/li>\n<\/ul>\n

            6. Scientific Research<\/strong><\/h3>\n
              \n
            • \n

              Wide bandgap semiconductor device R&D<\/p>\n<\/li>\n

            • \n

              Advanced epitaxy, doping, and material characterization<\/p>\n<\/li>\n<\/ul>\n

              Why Choose Our 12-Inch SiC Substrate?<\/strong><\/h2>\n

              \u25cf Customized Manufacturing<\/strong><\/h3>\n

              Various crystal orientations, resistivities, surface finish levels (CMP, epi-ready), and wafer thickness options are available.<\/p>\n

              \u25cf Process Integration Support<\/strong><\/h3>\n

              Technical guidance for epitaxy, lithography, doping, thinning, and device fabrication ensures seamless production compatibility.<\/p>\n

              \u25cf Comprehensive Quality Assurance<\/strong><\/h3>\n

              Strict defect inspection including:<\/p>\n

                \n
              • \n

                Micropipe analysis<\/p>\n<\/li>\n

              • \n

                BPD\/TSD mapping<\/p>\n<\/li>\n

              • \n

                Surface particle monitoring<\/p>\n<\/li>\n

              • \n

                Flatness and uniformity measurements<\/p>\n<\/li>\n<\/ul>\n

                \u25cf R&D Partnership<\/strong><\/h3>\n

                We work closely with customers on new device structures, large-diameter wafer development, and next-generation SiC technology innovation.<\/p>\n

                The 12-inch 4H-N silicon carbide substrate represents a major milestone in the evolution of wide bandgap semiconductors. Its superior thermal conductivity, high breakdown strength, and large-size platform make it a core material for future high-power and high-efficiency electronic systems.
                Whether for electric vehicles, power grids, RF systems, or aerospace, 300mm SiC wafers deliver performance, scalability, and reliability for next-generation semiconductor manufacturing.<\/p>","protected":false},"excerpt":{"rendered":"

                The 12-inch (300mm) silicon carbide substrate is a next-generation large-diameter wafer engineered for high-performance semiconductor manufacturing. Based on 4H-N SiC single-crystal technology, this prime-grade substrate offers exceptional electrical, thermal, and mechanical properties, making it ideal for high-power, high-frequency, and high-temperature device applications.<\/p>","protected":false},"featured_media":7865,"comment_status":"open","ping_status":"closed","template":"","meta":{"_acf_changed":false,"_uag_custom_page_level_css":""},"product_brand":[],"product_cat":[1091,1083],"product_tag":[],"class_list":{"0":"post-7864","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-4h-n","7":"product_cat-sic-wafer","9":"first","10":"instock","11":"shipping-taxable","12":"product-type-simple"},"acf":[],"uagb_featured_image_src":{"full":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/12inch-Sic-wafer-3.webp",600,600,false],"thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/12inch-Sic-wafer-3-150x150.webp",150,150,true],"medium":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/12inch-Sic-wafer-3-300x300.webp",300,300,true],"medium_large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/12inch-Sic-wafer-3.webp",600,600,false],"large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/12inch-Sic-wafer-3.webp",600,600,false],"1536x1536":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/12inch-Sic-wafer-3.webp",600,600,false],"2048x2048":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/12inch-Sic-wafer-3.webp",600,600,false],"trp-custom-language-flag":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/12inch-Sic-wafer-3.webp",12,12,false],"woocommerce_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/12inch-Sic-wafer-3-300x300.webp",300,300,true],"woocommerce_single":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/12inch-Sic-wafer-3.webp",600,600,false],"woocommerce_gallery_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/12inch-Sic-wafer-3-100x100.webp",100,100,true]},"uagb_author_info":{"display_name":"lydia","author_link":"https:\/\/www.sic-wafers.com\/ja\/author\/"},"uagb_comment_info":0,"uagb_excerpt":"The 12-inch (300mm) silicon carbide substrate is a next-generation large-diameter wafer engineered for high-performance semiconductor manufacturing. Based on 4H-N SiC single-crystal technology, this prime-grade substrate offers exceptional electrical, thermal, and mechanical properties, making it ideal for high-power, high-frequency, and high-temperature device applications.","_links":{"self":[{"href":"https:\/\/www.sic-wafers.com\/ja\/wp-json\/wp\/v2\/product\/7864","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.sic-wafers.com\/ja\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.sic-wafers.com\/ja\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/ja\/wp-json\/wp\/v2\/comments?post=7864"}],"version-history":[{"count":0,"href":"https:\/\/www.sic-wafers.com\/ja\/wp-json\/wp\/v2\/product\/7864\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/ja\/wp-json\/wp\/v2\/media\/7865"}],"wp:attachment":[{"href":"https:\/\/www.sic-wafers.com\/ja\/wp-json\/wp\/v2\/media?parent=7864"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/ja\/wp-json\/wp\/v2\/product_brand?post=7864"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/ja\/wp-json\/wp\/v2\/product_cat?post=7864"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/ja\/wp-json\/wp\/v2\/product_tag?post=7864"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}