Silicon carbide (SiC) wafers have become one of the most important wide-bandgap semiconductor substrates in power electronics, RF communication, and high-temperature applications. Among the most
1. Inleiding: Van siliciumlimieten naar doorbraken in de brede bandkloof Naarmate de wereldwijde industrieën versnellen in de richting van elektrificatie en digitalisering, naderen conventionele halfgeleiders op basis van silicium (Si) hun fysische grenzen.
With the rapid development of electric vehicles, 5G base stations, and renewable energy power electronics, substrate selection has become a critical factor in high-power device
