{"id":5448,"date":"2024-01-21T16:20:09","date_gmt":"2024-01-21T08:20:09","guid":{"rendered":"https:\/\/www.sic-wafers.com\/?p=5448"},"modified":"2024-01-23T14:23:32","modified_gmt":"2024-01-23T06:23:32","slug":"6-inch-gan-on-sapphire-top-supplier-from-xkh","status":"publish","type":"post","link":"https:\/\/www.sic-wafers.com\/pl\/6-inch-gan-on-sapphire-top-supplier-from-xkh\/","title":{"rendered":"6-calowy GaN na szafirze od dostawcy xkh"},"content":{"rendered":"<div style=\"margin-top: 0px; margin-bottom: 0px;\" class=\"sharethis-inline-share-buttons\" ><\/div>\n<p>gan on sapphire wafer\uff1a sapphire with gallium nitride substrates<\/p>\n\n\n\n<div data-aos= \"fade-down\" data-aos-duration=\"400\" data-aos-delay=\"0\" data-aos-easing=\"ease\" data-aos-once=\"true\" class=\"wp-block-uagb-container uagb-block-990c2806 alignfull uagb-is-root-container\"><div class=\"uagb-container-inner-blocks-wrap\">\n<div class=\"wp-block-uagb-container uagb-block-c70529c7\">\n<div data-aos= \"fade-right\" data-aos-duration=\"400\" data-aos-delay=\"0\" data-aos-easing=\"ease\" data-aos-once=\"true\" class=\"wp-block-uagb-image uagb-block-112299a2 wp-block-uagb-image--layout-default wp-block-uagb-image--effect-static wp-block-uagb-image--align-none\"><figure class=\"wp-block-uagb-image__figure\"><img loading=\"lazy\" decoding=\"async\" srcset=\"https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/01\/1705822808-images.jpeg ,https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/01\/1705822808-images.jpeg 780w, https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/01\/1705822808-images.jpeg 360w\" sizes=\"auto, (max-width: 480px) 150px\" src=\"https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/01\/1705822808-images.jpeg\" alt=\"Wafle GaN\" class=\"uag-image-5450\" width=\"258\" height=\"195\" title=\"\"\/><\/figure><\/div>\n<\/div>\n\n\n\n<div class=\"wp-block-uagb-container uagb-block-7ab80951\">\n<p>particularly in high-voltage applications, such as those requiring vertical gan devices with ratings more than 600 v, vertical gan power devices can potentially transform the power device market. gan devices have a lower on-resistance at a given breakdown voltage compared to both classic silicon-based power devices and upcoming pure silicon carbide power devices, depending on the material\u2019s physical features. in the low-voltage market, horizontal gan power devices, also known as gan-on-silicon high mobility transistors (hemts), compete with silicon devices, and gan is superior, further demonstrating the superiority of gan materials.<\/p>\n\n\n\n<p>Gallium Nitride on Sapphire, often abbreviated as GaN on Sapphire, represents a groundbreaking advancement in semiconductor technology. This innovative combination harnesses the unique properties of gallium nitride (GaN) while utilizing sapphire as the substrate material. In this comprehensive product introduction, we will explore the key features, advantages, applications, and the transformative impact of GaN on Sapphire in the semiconductor industry.<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">Key Features:<\/h3>\n\n\n\n<ol class=\"wp-block-list\">\n<li><strong>Material Synergy:<\/strong>\n<ul class=\"wp-block-list\">\n<li>GaN on Sapphire leverages the synergy between gallium nitride and sapphire. Gallium nitride provides excellent electrical properties, while sapphire serves as a robust and thermally efficient substrate, creating a powerful combination for semiconductor applications.<\/li>\n<\/ul>\n<\/li>\n\n\n\n<li><strong>Wide Bandgap Semiconductor:<\/strong>\n<ul class=\"wp-block-list\">\n<li>GaN is known for its wide bandgap, a crucial characteristic that allows for high-temperature operation and efficient power handling. This property makes GaN on Sapphire well-suited for applications requiring high-power and high-frequency operation.<\/li>\n<\/ul>\n<\/li>\n\n\n\n<li><strong>Stabilno\u015b\u0107 termiczna:<\/strong>\n<ul class=\"wp-block-list\">\n<li>Sapphire&#8217;s exceptional thermal stability complements GaN&#8217;s high-temperature capabilities. This combination ensures reliable performance even under extreme operating conditions, making GaN on Sapphire suitable for demanding applications.<\/li>\n<\/ul>\n<\/li>\n\n\n\n<li><strong>High Electron Mobility:<\/strong>\n<ul class=\"wp-block-list\">\n<li>GaN exhibits high electron mobility, enabling fast electron movement within the semiconductor material. This results in efficient and high-speed electronic devices, making GaN on Sapphire ideal for applications demanding rapid signal processing.<\/li>\n<\/ul>\n<\/li>\n\n\n\n<li><strong>Low Dislocation Density:<\/strong>\n<ul class=\"wp-block-list\">\n<li>The use of sapphire as a substrate contributes to low dislocation density in GaN on Sapphire structures. This feature enhances the material quality and reliability, leading to improved device performance and longevity.<\/li>\n<\/ul>\n<\/li>\n<\/ol>\n\n\n\n<h3 class=\"wp-block-heading\">Zalety:<\/h3>\n\n\n\n<ol class=\"wp-block-list\">\n<li><strong>Power Efficiency:<\/strong>\n<ul class=\"wp-block-list\">\n<li>GaN on Sapphire&#8217;s superior electrical properties translate to enhanced power efficiency. Devices built on this platform demonstrate reduced power losses, making them energy-efficient and environmentally friendly.<\/li>\n<\/ul>\n<\/li>\n\n\n\n<li><strong>High-Frequency Operation:<\/strong>\n<ul class=\"wp-block-list\">\n<li>The wide bandgap of GaN allows for high-frequency operation, making it suitable for applications in radio frequency (RF) devices, telecommunications, and high-frequency power electronics.<\/li>\n<\/ul>\n<\/li>\n\n\n\n<li><strong>Miniaturization and Integration:<\/strong>\n<ul class=\"wp-block-list\">\n<li>GaN on Sapphire enables the development of smaller and more compact devices due to its high electron mobility and efficient power handling. This feature facilitates the miniaturization and integration of semiconductor components.<\/li>\n<\/ul>\n<\/li>\n\n\n\n<li><strong>Improved Reliability:<\/strong>\n<ul class=\"wp-block-list\">\n<li>The low dislocation density in GaN on Sapphire contributes to improved device reliability. This is particularly crucial in applications where consistent and dependable performance is paramount.<\/li>\n<\/ul>\n<\/li>\n\n\n\n<li><strong>Versatility Across Industries:<\/strong>\n<ul class=\"wp-block-list\">\n<li>GaN on Sapphire finds applications across diverse industries, including telecommunications, automotive, aerospace, and power electronics. Its versatility makes it a preferred choice for next-generation semiconductor devices.<\/li>\n<\/ul>\n<\/li>\n<\/ol>\n\n\n\n<h3 class=\"wp-block-heading\">Zastosowania:<\/h3>\n\n\n\n<ol class=\"wp-block-list\">\n<li><strong>RF Power Amplifiers:<\/strong>\n<ul class=\"wp-block-list\">\n<li>GaN on Sapphire is widely used in the development of RF power amplifiers for wireless communication systems. Its high-frequency operation and power efficiency make it instrumental in enhancing signal strength in communication networks.<\/li>\n<\/ul>\n<\/li>\n\n\n\n<li><strong>Elektronika mocy:<\/strong>\n<ul class=\"wp-block-list\">\n<li>In power electronics applications, GaN on Sapphire is employed for the production of high-performance transistors and converters. Its efficiency and reliability contribute to the advancement of power management systems.<\/li>\n<\/ul>\n<\/li>\n\n\n\n<li><strong>LEDs and Lighting:<\/strong>\n<ul class=\"wp-block-list\">\n<li>GaN on Sapphire is a key technology in the manufacturing of high-brightness LEDs. Its wide bandgap is well-suited for emitting light in the visible spectrum, making it essential for energy-efficient lighting solutions.<\/li>\n<\/ul>\n<\/li>\n\n\n\n<li><strong>Przemys\u0142 lotniczy i obronny:<\/strong>\n<ul class=\"wp-block-list\">\n<li>The robustness and reliability of GaN on Sapphire make it suitable for aerospace and defense applications. It is used in radar systems, electronic warfare, and high-frequency communication devices.<\/li>\n<\/ul>\n<\/li>\n\n\n\n<li><strong>Elektronika samochodowa:<\/strong>\n<ul class=\"wp-block-list\">\n<li>GaN on Sapphire is increasingly integrated into automotive electronics for power conversion and management. Its ability to operate at high temperatures and handle high power levels aligns with the demanding requirements of automotive applications.<\/li>\n<\/ul>\n<\/li>\n<\/ol>\n\n\n\n<h3 class=\"wp-block-heading\">Transformative Impact:<\/h3>\n\n\n\n<ol class=\"wp-block-list\">\n<li><strong>5G Technology:<\/strong>\n<ul class=\"wp-block-list\">\n<li>GaN on Sapphire plays a pivotal role in the development of 5G technology. Its high-frequency capabilities contribute to the creation of efficient and high-performance RF devices essential for 5G communication networks.<\/li>\n<\/ul>\n<\/li>\n\n\n\n<li><strong>Electric Vehicles:<\/strong>\n<ul class=\"wp-block-list\">\n<li>The automotive industry benefits from GaN on Sapphire in the electrification of vehicles. Its use in power electronics enhances the efficiency and performance of electric vehicle systems.<\/li>\n<\/ul>\n<\/li>\n\n\n\n<li><strong>Efficient Power Distribution:<\/strong>\n<ul class=\"wp-block-list\">\n<li>GaN on Sapphire is transforming power distribution systems by enabling the development of compact and efficient power converters. This has implications for renewable energy systems and smart grid technologies.<\/li>\n<\/ul>\n<\/li>\n\n\n\n<li><strong>Advancements in Lighting:<\/strong>\n<ul class=\"wp-block-list\">\n<li>The use of GaN on Sapphire in LED technology has led to significant advancements in energy-efficient lighting solutions. It contributes to the development of brighter, longer-lasting, and environmentally friendly lighting options.<\/li>\n<\/ul>\n<\/li>\n<\/ol>\n\n\n\n<h3 class=\"wp-block-heading\">Future Trends:<\/h3>\n\n\n\n<ol class=\"wp-block-list\">\n<li><strong>Integration in Consumer Electronics:<\/strong>\n<ul class=\"wp-block-list\">\n<li>GaN on Sapphire is expected to play a larger role in consumer electronics, leading to the development of smaller, more efficient devices in areas such as smartphones, laptops, and wearables.<\/li>\n<\/ul>\n<\/li>\n\n\n\n<li><strong>Continued Expansion in 5G Infrastructure:<\/strong>\n<ul class=\"wp-block-list\">\n<li>With the global rollout of 5G networks, the demand for GaN on Sapphire is expected to surge, driving further innovation in RF power amplifiers and high-frequency devices.<\/li>\n<\/ul>\n<\/li>\n\n\n\n<li><strong>Emergence in Quantum Computing:<\/strong>\n<ul class=\"wp-block-list\">\n<li>GaN on Sapphire&#8217;s unique properties may find applications in emerging technologies, including quantum computing, where its reliability and efficiency can contribute to the development of advanced computing systems.<\/li>\n<\/ul>\n<\/li>\n<\/ol>\n\n\n\n<h3 class=\"wp-block-heading\">Wnioski:<\/h3>\n\n\n\n<p>In conclusion, GaN on Sapphire stands at the forefront of semiconductor technology, offering a potent combination of gallium nitride&#8217;s electrical prowess and sapphire&#8217;s substrate advantages. Its impact spans diverse industries, from telecommunications to automotive and beyond. As the demand for high-frequency, efficient, and reliable semiconductor devices continues to rise, GaN on Sapphire is poised to play a pivotal role in shaping the future of electronic systems and technologies.<\/p>\n<\/div>\n<\/div><\/div>\n\n\n\n<p>to compete in the high-voltage market with pure silicon carbide power devices, vertical gan power devices are being developed. several businesses have increased production of 6-inch and 8-inch sic in the first two years, and sic devices have earned some market share in the high-voltage application sector. on the other hand, vertical gan devices are not yet on the market, and only a select few manufacturers can produce gan wafers with a 4-inch diameter. for vertical gan devices to advance, it is essential to increase the availability of high-quality gan wafers.<br>gallium nitride high voltage power devices may offer three benefits:<br>the predicted on-resistance is much lower than the experimental one under a fixed breakdown voltage. that\u2019s why the forward bias power loss is lower and the overall energy efficiency is better.<\/p>\n\n\n\n<div class=\"wp-block-uagb-advanced-heading uagb-block-1311efce\"><h2 class=\"uagb-heading-text\">150mm 6inch GaN on Silicon\/Sapphire\/SiC Epi-layer wafer Gallium nitride epitaxial wafer<\/h2><\/div>\n\n\n\n<p>The 6-inch sapphire substrate wafer is a high-quality semiconductor material consisting of gallium nitride (GaN) layers grown on a sapphire substrate. The material has excellent electronic transport properties and is ideal for manufacturing high-power and high-frequency semiconductor devices.<\/p>\n\n\n\n<div class=\"wp-block-uagb-advanced-heading uagb-block-1bb45d96\"><h2 class=\"uagb-heading-text\">150mm 6inch GaN on Silicon\/Sapphire\/SiC Epi-layer wafer Gallium nitride epitaxial wafer<\/h2><\/div>\n\n\n\n<p>The 6-inch sapphire substrate wafer is a high-quality semiconductor material consisting of layers of gallium nitride (GaN) grown on a sapphire substrate. The material has excellent electronic transport properties and is ideal for manufacturing high-power and high-frequency semiconductor devices.<\/p>\n\n\n\n<p>Manufacturing method: The manufacturing process involves growing GaN layers on a sapphire substrate using advanced techniques such as metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). The deposition process is carried out under controlled conditions to ensure high crystal quality and uniform film.<\/p>\n\n\n\n<p>6inch GaN-On-Sapphire applications: 6-inch sapphire substrate chips are widely used in microwave communications, radar systems, wireless technology and optoelectronics.<\/p>\n\n\n\n<div class=\"wp-block-uagb-advanced-heading uagb-block-98cbadbd\"><h2 class=\"uagb-heading-text\">Some common applications include of GaN on Sapphire<\/h2><\/div>\n\n\n\n<div class=\"wp-block-uagb-icon-list uagb-block-2979abbb\"><div class=\"uagb-icon-list__wrap\">\n<div class=\"wp-block-uagb-icon-list-child uagb-block-7cba0d62\"><span class=\"uagb-icon-list__source-wrap\"><svg xmlns=\"https:\/\/www.w3.org\/2000\/svg\" viewbox=\"0 0 512 512\"><path d=\"M256 0C114.6 0 0 114.6 0 256c0 141.4 114.6 256 256 256s256-114.6 256-256C512 114.6 397.4 0 256 0zM406.6 278.6l-103.1 103.1c-12.5 12.5-32.75 12.5-45.25 0s-12.5-32.75 0-45.25L306.8 288H128C110.3 288 96 273.7 96 256s14.31-32 32-32h178.8l-49.38-49.38c-12.5-12.5-12.5-32.75 0-45.25s32.75-12.5 45.25 0l103.1 103.1C414.6 241.3 416 251.1 416 256C416 260.9 414.6 270.7 406.6 278.6z\"><\/path><\/svg><\/span><span class=\"uagb-icon-list__label\">Rf power amplifier<\/span><\/div>\n\n\n\n<div class=\"wp-block-uagb-icon-list-child uagb-block-12c34293\"><span class=\"uagb-icon-list__source-wrap\"><svg xmlns=\"https:\/\/www.w3.org\/2000\/svg\" viewbox=\"0 0 512 512\"><path d=\"M256 0C114.6 0 0 114.6 0 256c0 141.4 114.6 256 256 256s256-114.6 256-256C512 114.6 397.4 0 256 0zM406.6 278.6l-103.1 103.1c-12.5 12.5-32.75 12.5-45.25 0s-12.5-32.75 0-45.25L306.8 288H128C110.3 288 96 273.7 96 256s14.31-32 32-32h178.8l-49.38-49.38c-12.5-12.5-12.5-32.75 0-45.25s32.75-12.5 45.25 0l103.1 103.1C414.6 241.3 416 251.1 416 256C416 260.9 414.6 270.7 406.6 278.6z\"><\/path><\/svg><\/span><span class=\"uagb-icon-list__label\">LED lighting industry<\/span><\/div>\n\n\n\n<div class=\"wp-block-uagb-icon-list-child uagb-block-7bcc586b\"><span class=\"uagb-icon-list__source-wrap\"><svg xmlns=\"https:\/\/www.w3.org\/2000\/svg\" viewbox=\"0 0 512 512\"><path d=\"M256 0C114.6 0 0 114.6 0 256c0 141.4 114.6 256 256 256s256-114.6 256-256C512 114.6 397.4 0 256 0zM406.6 278.6l-103.1 103.1c-12.5 12.5-32.75 12.5-45.25 0s-12.5-32.75 0-45.25L306.8 288H128C110.3 288 96 273.7 96 256s14.31-32 32-32h178.8l-49.38-49.38c-12.5-12.5-12.5-32.75 0-45.25s32.75-12.5 45.25 0l103.1 103.1C414.6 241.3 416 251.1 416 256C416 260.9 414.6 270.7 406.6 278.6z\"><\/path><\/svg><\/span><span class=\"uagb-icon-list__label\">Wireless network communication equipment<\/span><\/div>\n\n\n\n<div class=\"wp-block-uagb-icon-list-child uagb-block-af45ddba\"><span class=\"uagb-icon-list__source-wrap\"><svg xmlns=\"https:\/\/www.w3.org\/2000\/svg\" viewbox=\"0 0 512 512\"><path d=\"M256 0C114.6 0 0 114.6 0 256c0 141.4 114.6 256 256 256s256-114.6 256-256C512 114.6 397.4 0 256 0zM406.6 278.6l-103.1 103.1c-12.5 12.5-32.75 12.5-45.25 0s-12.5-32.75 0-45.25L306.8 288H128C110.3 288 96 273.7 96 256s14.31-32 32-32h178.8l-49.38-49.38c-12.5-12.5-12.5-32.75 0-45.25s32.75-12.5 45.25 0l103.1 103.1C414.6 241.3 416 251.1 416 256C416 260.9 414.6 270.7 406.6 278.6z\"><\/path><\/svg><\/span><span class=\"uagb-icon-list__label\">Electronic devices in high temperature environment<\/span><\/div>\n\n\n\n<div class=\"wp-block-uagb-icon-list-child uagb-block-456f2e5c\"><span class=\"uagb-icon-list__source-wrap\"><svg xmlns=\"https:\/\/www.w3.org\/2000\/svg\" viewbox=\"0 0 512 512\"><path d=\"M256 0C114.6 0 0 114.6 0 256c0 141.4 114.6 256 256 256s256-114.6 256-256C512 114.6 397.4 0 256 0zM406.6 278.6l-103.1 103.1c-12.5 12.5-32.75 12.5-45.25 0s-12.5-32.75 0-45.25L306.8 288H128C110.3 288 96 273.7 96 256s14.31-32 32-32h178.8l-49.38-49.38c-12.5-12.5-12.5-32.75 0-45.25s32.75-12.5 45.25 0l103.1 103.1C414.6 241.3 416 251.1 416 256C416 260.9 414.6 270.7 406.6 278.6z\"><\/path><\/svg><\/span><span class=\"uagb-icon-list__label\">Optoelectronic devices<\/span><\/div>\n<\/div><\/div>\n\n\n\n<div class=\"wp-block-uagb-advanced-heading uagb-block-7f625571\"><h2 class=\"uagb-heading-text\">Product specifications of GaN on Sapphire<\/h2><\/div>\n\n\n\n<div class=\"wp-block-uagb-icon-list uagb-block-a0255480\"><div class=\"uagb-icon-list__wrap\">\n<div class=\"wp-block-uagb-icon-list-child uagb-block-c7d0678c\"><span class=\"uagb-icon-list__source-wrap\"><svg xmlns=\"https:\/\/www.w3.org\/2000\/svg\" viewbox=\"0 0 448 512\"><path d=\"M347.1 215.4c11.7-32.6 45.4-126.9 45.4-157.1 0-26.6-15.7-48.9-43.7-48.9-44.6 0-84.6 131.7-97.1 163.1C242 144 196.6 0 156.6 0c-31.1 0-45.7 22.9-45.7 51.7 0 35.3 34.2 126.8 46.6 162-6.3-2.3-13.1-4.3-20-4.3-23.4 0-48.3 29.1-48.3 52.6 0 8.9 4.9 21.4 8 29.7-36.9 10-51.1 34.6-51.1 71.7C46 435.6 114.4 512 210.6 512c118 0 191.4-88.6 191.4-202.9 0-43.1-6.9-82-54.9-93.7zM311.7 108c4-12.3 21.1-64.3 37.1-64.3 8.6 0 10.9 8.9 10.9 16 0 19.1-38.6 124.6-47.1 148l-34-6 33.1-93.7zM142.3 48.3c0-11.9 14.5-45.7 46.3 47.1l34.6 100.3c-15.6-1.3-27.7-3-35.4 1.4-10.9-28.8-45.5-119.7-45.5-148.8zM140 244c29.3 0 67.1 94.6 67.1 107.4 0 5.1-4.9 11.4-10.6 11.4-20.9 0-76.9-76.9-76.9-97.7 .1-7.7 12.7-21.1 20.4-21.1zm184.3 186.3c-29.1 32-66.3 48.6-109.7 48.6-59.4 0-106.3-32.6-128.9-88.3-17.1-43.4 3.8-68.3 20.6-68.3 11.4 0 54.3 60.3 54.3 73.1 0 4.9-7.7 8.3-11.7 8.3-16.1 0-22.4-15.5-51.1-51.4-29.7 29.7 20.5 86.9 58.3 86.9 26.1 0 43.1-24.2 38-42 3.7 0 8.3 .3 11.7-.6 1.1 27.1 9.1 59.4 41.7 61.7 0-.9 2-7.1 2-7.4 0-17.4-10.6-32.6-10.6-50.3 0-28.3 21.7-55.7 43.7-71.7 8-6 17.7-9.7 27.1-13.1 9.7-3.7 20-8 27.4-15.4-1.1-11.2-5.7-21.1-16.9-21.1-27.7 0-120.6 4-120.6-39.7 0-6.7 .1-13.1 17.4-13.1 32.3 0 114.3 8 138.3 29.1 18.1 16.1 24.3 113.2-31 174.7zm-98.6-126c9.7 3.1 19.7 4 29.7 6-7.4 5.4-14 12-20.3 19.1-2.8-8.5-6.2-16.8-9.4-25.1z\"><\/path><\/svg><\/span><span class=\"uagb-icon-list__label\">Size: The substrate diameter is 6 inches (about 150 mm).<\/span><\/div>\n\n\n\n<div class=\"wp-block-uagb-icon-list-child uagb-block-f3c4ea2d\"><span class=\"uagb-icon-list__source-wrap\"><svg xmlns=\"https:\/\/www.w3.org\/2000\/svg\" viewbox=\"0 0 448 512\"><path d=\"M347.1 215.4c11.7-32.6 45.4-126.9 45.4-157.1 0-26.6-15.7-48.9-43.7-48.9-44.6 0-84.6 131.7-97.1 163.1C242 144 196.6 0 156.6 0c-31.1 0-45.7 22.9-45.7 51.7 0 35.3 34.2 126.8 46.6 162-6.3-2.3-13.1-4.3-20-4.3-23.4 0-48.3 29.1-48.3 52.6 0 8.9 4.9 21.4 8 29.7-36.9 10-51.1 34.6-51.1 71.7C46 435.6 114.4 512 210.6 512c118 0 191.4-88.6 191.4-202.9 0-43.1-6.9-82-54.9-93.7zM311.7 108c4-12.3 21.1-64.3 37.1-64.3 8.6 0 10.9 8.9 10.9 16 0 19.1-38.6 124.6-47.1 148l-34-6 33.1-93.7zM142.3 48.3c0-11.9 14.5-45.7 46.3 47.1l34.6 100.3c-15.6-1.3-27.7-3-35.4 1.4-10.9-28.8-45.5-119.7-45.5-148.8zM140 244c29.3 0 67.1 94.6 67.1 107.4 0 5.1-4.9 11.4-10.6 11.4-20.9 0-76.9-76.9-76.9-97.7 .1-7.7 12.7-21.1 20.4-21.1zm184.3 186.3c-29.1 32-66.3 48.6-109.7 48.6-59.4 0-106.3-32.6-128.9-88.3-17.1-43.4 3.8-68.3 20.6-68.3 11.4 0 54.3 60.3 54.3 73.1 0 4.9-7.7 8.3-11.7 8.3-16.1 0-22.4-15.5-51.1-51.4-29.7 29.7 20.5 86.9 58.3 86.9 26.1 0 43.1-24.2 38-42 3.7 0 8.3 .3 11.7-.6 1.1 27.1 9.1 59.4 41.7 61.7 0-.9 2-7.1 2-7.4 0-17.4-10.6-32.6-10.6-50.3 0-28.3 21.7-55.7 43.7-71.7 8-6 17.7-9.7 27.1-13.1 9.7-3.7 20-8 27.4-15.4-1.1-11.2-5.7-21.1-16.9-21.1-27.7 0-120.6 4-120.6-39.7 0-6.7 .1-13.1 17.4-13.1 32.3 0 114.3 8 138.3 29.1 18.1 16.1 24.3 113.2-31 174.7zm-98.6-126c9.7 3.1 19.7 4 29.7 6-7.4 5.4-14 12-20.3 19.1-2.8-8.5-6.2-16.8-9.4-25.1z\"><\/path><\/svg><\/span><span class=\"uagb-icon-list__label\">Surface quality: The surface has been finely polished to provide excellent mirror quality.<\/span><\/div>\n\n\n\n<div class=\"wp-block-uagb-icon-list-child uagb-block-f14405d7\"><span class=\"uagb-icon-list__source-wrap\"><svg xmlns=\"https:\/\/www.w3.org\/2000\/svg\" viewbox=\"0 0 448 512\"><path d=\"M347.1 215.4c11.7-32.6 45.4-126.9 45.4-157.1 0-26.6-15.7-48.9-43.7-48.9-44.6 0-84.6 131.7-97.1 163.1C242 144 196.6 0 156.6 0c-31.1 0-45.7 22.9-45.7 51.7 0 35.3 34.2 126.8 46.6 162-6.3-2.3-13.1-4.3-20-4.3-23.4 0-48.3 29.1-48.3 52.6 0 8.9 4.9 21.4 8 29.7-36.9 10-51.1 34.6-51.1 71.7C46 435.6 114.4 512 210.6 512c118 0 191.4-88.6 191.4-202.9 0-43.1-6.9-82-54.9-93.7zM311.7 108c4-12.3 21.1-64.3 37.1-64.3 8.6 0 10.9 8.9 10.9 16 0 19.1-38.6 124.6-47.1 148l-34-6 33.1-93.7zM142.3 48.3c0-11.9 14.5-45.7 46.3 47.1l34.6 100.3c-15.6-1.3-27.7-3-35.4 1.4-10.9-28.8-45.5-119.7-45.5-148.8zM140 244c29.3 0 67.1 94.6 67.1 107.4 0 5.1-4.9 11.4-10.6 11.4-20.9 0-76.9-76.9-76.9-97.7 .1-7.7 12.7-21.1 20.4-21.1zm184.3 186.3c-29.1 32-66.3 48.6-109.7 48.6-59.4 0-106.3-32.6-128.9-88.3-17.1-43.4 3.8-68.3 20.6-68.3 11.4 0 54.3 60.3 54.3 73.1 0 4.9-7.7 8.3-11.7 8.3-16.1 0-22.4-15.5-51.1-51.4-29.7 29.7 20.5 86.9 58.3 86.9 26.1 0 43.1-24.2 38-42 3.7 0 8.3 .3 11.7-.6 1.1 27.1 9.1 59.4 41.7 61.7 0-.9 2-7.1 2-7.4 0-17.4-10.6-32.6-10.6-50.3 0-28.3 21.7-55.7 43.7-71.7 8-6 17.7-9.7 27.1-13.1 9.7-3.7 20-8 27.4-15.4-1.1-11.2-5.7-21.1-16.9-21.1-27.7 0-120.6 4-120.6-39.7 0-6.7 .1-13.1 17.4-13.1 32.3 0 114.3 8 138.3 29.1 18.1 16.1 24.3 113.2-31 174.7zm-98.6-126c9.7 3.1 19.7 4 29.7 6-7.4 5.4-14 12-20.3 19.1-2.8-8.5-6.2-16.8-9.4-25.1z\"><\/path><\/svg><\/span><span class=\"uagb-icon-list__label\">Thickness: The thickness of GaN layer can be customized according to specific requirements.<\/span><\/div>\n\n\n\n<div class=\"wp-block-uagb-icon-list-child uagb-block-064882cd\"><span class=\"uagb-icon-list__source-wrap\"><svg xmlns=\"https:\/\/www.w3.org\/2000\/svg\" viewbox=\"0 0 448 512\"><path d=\"M347.1 215.4c11.7-32.6 45.4-126.9 45.4-157.1 0-26.6-15.7-48.9-43.7-48.9-44.6 0-84.6 131.7-97.1 163.1C242 144 196.6 0 156.6 0c-31.1 0-45.7 22.9-45.7 51.7 0 35.3 34.2 126.8 46.6 162-6.3-2.3-13.1-4.3-20-4.3-23.4 0-48.3 29.1-48.3 52.6 0 8.9 4.9 21.4 8 29.7-36.9 10-51.1 34.6-51.1 71.7C46 435.6 114.4 512 210.6 512c118 0 191.4-88.6 191.4-202.9 0-43.1-6.9-82-54.9-93.7zM311.7 108c4-12.3 21.1-64.3 37.1-64.3 8.6 0 10.9 8.9 10.9 16 0 19.1-38.6 124.6-47.1 148l-34-6 33.1-93.7zM142.3 48.3c0-11.9 14.5-45.7 46.3 47.1l34.6 100.3c-15.6-1.3-27.7-3-35.4 1.4-10.9-28.8-45.5-119.7-45.5-148.8zM140 244c29.3 0 67.1 94.6 67.1 107.4 0 5.1-4.9 11.4-10.6 11.4-20.9 0-76.9-76.9-76.9-97.7 .1-7.7 12.7-21.1 20.4-21.1zm184.3 186.3c-29.1 32-66.3 48.6-109.7 48.6-59.4 0-106.3-32.6-128.9-88.3-17.1-43.4 3.8-68.3 20.6-68.3 11.4 0 54.3 60.3 54.3 73.1 0 4.9-7.7 8.3-11.7 8.3-16.1 0-22.4-15.5-51.1-51.4-29.7 29.7 20.5 86.9 58.3 86.9 26.1 0 43.1-24.2 38-42 3.7 0 8.3 .3 11.7-.6 1.1 27.1 9.1 59.4 41.7 61.7 0-.9 2-7.1 2-7.4 0-17.4-10.6-32.6-10.6-50.3 0-28.3 21.7-55.7 43.7-71.7 8-6 17.7-9.7 27.1-13.1 9.7-3.7 20-8 27.4-15.4-1.1-11.2-5.7-21.1-16.9-21.1-27.7 0-120.6 4-120.6-39.7 0-6.7 .1-13.1 17.4-13.1 32.3 0 114.3 8 138.3 29.1 18.1 16.1 24.3 113.2-31 174.7zm-98.6-126c9.7 3.1 19.7 4 29.7 6-7.4 5.4-14 12-20.3 19.1-2.8-8.5-6.2-16.8-9.4-25.1z\"><\/path><\/svg><\/span><span class=\"uagb-icon-list__label\">Packaging: The substrate is carefully packed with anti-static materials to prevent damage during transportation.<\/span><\/div>\n\n\n\n<div class=\"wp-block-uagb-icon-list-child uagb-block-b443425b\"><span class=\"uagb-icon-list__source-wrap\"><svg xmlns=\"https:\/\/www.w3.org\/2000\/svg\" viewbox=\"0 0 448 512\"><path d=\"M347.1 215.4c11.7-32.6 45.4-126.9 45.4-157.1 0-26.6-15.7-48.9-43.7-48.9-44.6 0-84.6 131.7-97.1 163.1C242 144 196.6 0 156.6 0c-31.1 0-45.7 22.9-45.7 51.7 0 35.3 34.2 126.8 46.6 162-6.3-2.3-13.1-4.3-20-4.3-23.4 0-48.3 29.1-48.3 52.6 0 8.9 4.9 21.4 8 29.7-36.9 10-51.1 34.6-51.1 71.7C46 435.6 114.4 512 210.6 512c118 0 191.4-88.6 191.4-202.9 0-43.1-6.9-82-54.9-93.7zM311.7 108c4-12.3 21.1-64.3 37.1-64.3 8.6 0 10.9 8.9 10.9 16 0 19.1-38.6 124.6-47.1 148l-34-6 33.1-93.7zM142.3 48.3c0-11.9 14.5-45.7 46.3 47.1l34.6 100.3c-15.6-1.3-27.7-3-35.4 1.4-10.9-28.8-45.5-119.7-45.5-148.8zM140 244c29.3 0 67.1 94.6 67.1 107.4 0 5.1-4.9 11.4-10.6 11.4-20.9 0-76.9-76.9-76.9-97.7 .1-7.7 12.7-21.1 20.4-21.1zm184.3 186.3c-29.1 32-66.3 48.6-109.7 48.6-59.4 0-106.3-32.6-128.9-88.3-17.1-43.4 3.8-68.3 20.6-68.3 11.4 0 54.3 60.3 54.3 73.1 0 4.9-7.7 8.3-11.7 8.3-16.1 0-22.4-15.5-51.1-51.4-29.7 29.7 20.5 86.9 58.3 86.9 26.1 0 43.1-24.2 38-42 3.7 0 8.3 .3 11.7-.6 1.1 27.1 9.1 59.4 41.7 61.7 0-.9 2-7.1 2-7.4 0-17.4-10.6-32.6-10.6-50.3 0-28.3 21.7-55.7 43.7-71.7 8-6 17.7-9.7 27.1-13.1 9.7-3.7 20-8 27.4-15.4-1.1-11.2-5.7-21.1-16.9-21.1-27.7 0-120.6 4-120.6-39.7 0-6.7 .1-13.1 17.4-13.1 32.3 0 114.3 8 138.3 29.1 18.1 16.1 24.3 113.2-31 174.7zm-98.6-126c9.7 3.1 19.7 4 29.7 6-7.4 5.4-14 12-20.3 19.1-2.8-8.5-6.2-16.8-9.4-25.1z\"><\/path><\/svg><\/span><span class=\"uagb-icon-list__label\">\u00a0Positioning edges: The substrate has specific positioning edges that facilitate alignment and operation during device preparation<\/span><\/div>\n\n\n\n<div class=\"wp-block-uagb-icon-list-child uagb-block-b6b9ea5e\"><span class=\"uagb-icon-list__source-wrap\"><svg xmlns=\"https:\/\/www.w3.org\/2000\/svg\" viewbox=\"0 0 448 512\"><path d=\"M347.1 215.4c11.7-32.6 45.4-126.9 45.4-157.1 0-26.6-15.7-48.9-43.7-48.9-44.6 0-84.6 131.7-97.1 163.1C242 144 196.6 0 156.6 0c-31.1 0-45.7 22.9-45.7 51.7 0 35.3 34.2 126.8 46.6 162-6.3-2.3-13.1-4.3-20-4.3-23.4 0-48.3 29.1-48.3 52.6 0 8.9 4.9 21.4 8 29.7-36.9 10-51.1 34.6-51.1 71.7C46 435.6 114.4 512 210.6 512c118 0 191.4-88.6 191.4-202.9 0-43.1-6.9-82-54.9-93.7zM311.7 108c4-12.3 21.1-64.3 37.1-64.3 8.6 0 10.9 8.9 10.9 16 0 19.1-38.6 124.6-47.1 148l-34-6 33.1-93.7zM142.3 48.3c0-11.9 14.5-45.7 46.3 47.1l34.6 100.3c-15.6-1.3-27.7-3-35.4 1.4-10.9-28.8-45.5-119.7-45.5-148.8zM140 244c29.3 0 67.1 94.6 67.1 107.4 0 5.1-4.9 11.4-10.6 11.4-20.9 0-76.9-76.9-76.9-97.7 .1-7.7 12.7-21.1 20.4-21.1zm184.3 186.3c-29.1 32-66.3 48.6-109.7 48.6-59.4 0-106.3-32.6-128.9-88.3-17.1-43.4 3.8-68.3 20.6-68.3 11.4 0 54.3 60.3 54.3 73.1 0 4.9-7.7 8.3-11.7 8.3-16.1 0-22.4-15.5-51.1-51.4-29.7 29.7 20.5 86.9 58.3 86.9 26.1 0 43.1-24.2 38-42 3.7 0 8.3 .3 11.7-.6 1.1 27.1 9.1 59.4 41.7 61.7 0-.9 2-7.1 2-7.4 0-17.4-10.6-32.6-10.6-50.3 0-28.3 21.7-55.7 43.7-71.7 8-6 17.7-9.7 27.1-13.1 9.7-3.7 20-8 27.4-15.4-1.1-11.2-5.7-21.1-16.9-21.1-27.7 0-120.6 4-120.6-39.7 0-6.7 .1-13.1 17.4-13.1 32.3 0 114.3 8 138.3 29.1 18.1 16.1 24.3 113.2-31 174.7zm-98.6-126c9.7 3.1 19.7 4 29.7 6-7.4 5.4-14 12-20.3 19.1-2.8-8.5-6.2-16.8-9.4-25.1z\"><\/path><\/svg><\/span><span class=\"uagb-icon-list__label\">Other parameters: Specific parameters such as thinness, resistivity and doping concentration can be adjusted according to customer requirements.<\/span><\/div>\n<\/div><\/div>\n\n\n\n<p>With their superior material properties and diverse applications, 6-inch sapphire substrate wafers are a reliable choice for the development of high-performance semiconductor devices in various industries.<\/p>\n\n\n\n<figure class=\"wp-block-table\"><table><tbody><tr><td><strong>Substrate<\/strong><\/td><td>6\u201d 1mm &lt;111&gt; p-type Si<\/td><td>6\u201d 1mm &lt;111&gt; p-type Si<\/td><\/tr><tr><td><strong>Epi ThickAvg<\/strong><\/td><td>~5um<\/td><td>~7um<\/td><\/tr><tr><td><strong>Epi ThickUnif<\/strong><\/td><td>&lt;2%<\/td><td>&lt;2%<\/td><\/tr><tr><td><strong>Bow<\/strong><\/td><td>+\/-45um<\/td><td>+\/-45um<\/td><\/tr><tr><td><strong>Cracking<\/strong><\/td><td>&lt;5mm<\/td><td>&lt;5mm<\/td><\/tr><tr><td><strong>Vertical BV<\/strong><\/td><td>&gt;1000V<\/td><td>&gt;1400V<\/td><\/tr><tr><td><strong>HEMT Al%<\/strong><\/td><td>25-35%<\/td><td>25-35%<\/td><\/tr><tr><td><strong>HEMT ThickAvg<\/strong><\/td><td>20-30nm<\/td><td>20-30nm<\/td><\/tr><tr><td><strong>Insitu SiN Cap<\/strong><\/td><td>5-60nm<\/td><td>5-60nm<\/td><\/tr><tr><td><strong>2DEG conc.<\/strong><\/td><td>~10<sup>13<\/sup>cm<sup>-2<\/sup><\/td><td>~10<sup>13<\/sup>cm<sup>-2<\/sup><\/td><\/tr><tr><td><strong>Mobility<\/strong><\/td><td>~2000cm<sup>2<\/sup>\/Vs (&lt;2%)<\/td><td>~2000cm<sup>2<\/sup>\/Vs (&lt;2%)<\/td><\/tr><tr><td><strong>Rsh<\/strong><\/td><td>&lt;330ohm\/sq (&lt;2%)<\/td><td>&lt;330ohm\/sq (&lt;2%)<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\t\t\t\t\t<div\n\t\t\t\t\t\tclass=\"wp-block-uagb-image-gallery uagb-block-61a27cd5\"\n\t\t\t\t\t\tstyle=\"\"\n\t\t\t\t\t>\n\t\t\t\t\t\t\t\t\t\t\t<div class=\"spectra-image-gallery spectra-image-gallery__layout--grid spectra-image-gallery__layout--grid-col-3 spectra-image-gallery__layout--grid-col-tab-3 spectra-image-gallery__layout--grid-col-mob-2\">\n\t\t\t\t\t\t\t\t\t\t\t<div class='spectra-image-gallery__media-wrapper' data-spectra-gallery-image-id='5453' tabindex=\"0\">\n\t\t\t\t\t\t\t<div class=\"spectra-image-gallery__media spectra-image-gallery__media--grid\">\n\t\t\t\t<picture>\n\t\t\t\t\t<source media=\"(min-width: 1024px)\" srcset=\"https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/01\/1705823617-QQ\u56fe\u7247202202281158051.png\">\n\t\t\t\t\t<source media=\"(min-width: 768px)\" srcset=\"https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/01\/1705823617-QQ\u56fe\u7247202202281158051.png\">\n\t\t\t\t\t<img decoding=\"async\" class=\"spectra-image-gallery__media-thumbnail spectra-image-gallery__media-thumbnail--grid\" src=\"https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/01\/1705823617-QQ\u56fe\u7247202202281158051-300x300.png\" alt=\"\" loading=\"lazy\" \/>\n\t\t\t\t<\/picture>\n\t\t\t\t<div class=\"spectra-image-gallery__media-thumbnail-blurrer\"><\/div>\n\t\t\t\t\t\t\t\t\t\t\t<div class=\"spectra-image-gallery__media-thumbnail-caption-wrapper spectra-image-gallery__media-thumbnail-caption-wrapper--overlay\">\n\t\t\t\t\t\t\t\t\t\t\t<div class=\"spectra-image-gallery__media-thumbnail-caption spectra-image-gallery__media-thumbnail-caption--overlay\">\n\t\t\t\t\tGaN on Sapphire wafers\t\t\t\t<\/div>\n\t\t\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t\t\t\t<div class='spectra-image-gallery__media-wrapper' data-spectra-gallery-image-id='5450' tabindex=\"0\">\n\t\t\t\t\t\t\t<div class=\"spectra-image-gallery__media spectra-image-gallery__media--grid\">\n\t\t\t\t<picture>\n\t\t\t\t\t<source media=\"(min-width: 1024px)\" srcset=\"https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/01\/1705822808-images.jpeg\">\n\t\t\t\t\t<source media=\"(min-width: 768px)\" srcset=\"https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/01\/1705822808-images.jpeg\">\n\t\t\t\t\t<img decoding=\"async\" class=\"spectra-image-gallery__media-thumbnail spectra-image-gallery__media-thumbnail--grid\" src=\"https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/01\/1705822808-images.jpeg\" alt=\"Wafle GaN\" loading=\"lazy\" \/>\n\t\t\t\t<\/picture>\n\t\t\t\t<div class=\"spectra-image-gallery__media-thumbnail-blurrer\"><\/div>\n\t\t\t\t\t\t\t\t\t\t\t<div class=\"spectra-image-gallery__media-thumbnail-caption-wrapper spectra-image-gallery__media-thumbnail-caption-wrapper--overlay\">\n\t\t\t\t\t\t\t\t\t\t\t<div class=\"spectra-image-gallery__media-thumbnail-caption spectra-image-gallery__media-thumbnail-caption--overlay\">\n\t\t\t\t\tGaN on Sapphire wafers\t\t\t\t<\/div>\n\t\t\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t\t\t\t<div class='spectra-image-gallery__media-wrapper' data-spectra-gallery-image-id='5449' tabindex=\"0\">\n\t\t\t\t\t\t\t<div class=\"spectra-image-gallery__media spectra-image-gallery__media--grid\">\n\t\t\t\t<picture>\n\t\t\t\t\t<source media=\"(min-width: 1024px)\" srcset=\"https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/01\/1705822671-\u4e0b\u8f7d.jpeg\">\n\t\t\t\t\t<source media=\"(min-width: 768px)\" srcset=\"https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/01\/1705822671-\u4e0b\u8f7d.jpeg\">\n\t\t\t\t\t<img decoding=\"async\" class=\"spectra-image-gallery__media-thumbnail spectra-image-gallery__media-thumbnail--grid\" src=\"https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/01\/1705822671-\u4e0b\u8f7d.jpeg\" alt=\"GaN na szafirze\" loading=\"lazy\" \/>\n\t\t\t\t<\/picture>\n\t\t\t\t<div class=\"spectra-image-gallery__media-thumbnail-blurrer\"><\/div>\n\t\t\t\t\t\t\t\t\t\t\t<div class=\"spectra-image-gallery__media-thumbnail-caption-wrapper spectra-image-gallery__media-thumbnail-caption-wrapper--overlay\">\n\t\t\t\t\t\t\t\t\t\t\t<div class=\"spectra-image-gallery__media-thumbnail-caption spectra-image-gallery__media-thumbnail-caption--overlay\">\n\t\t\t\t\tGaN on sapphire Wafers\t\t\t\t<\/div>\n\t\t\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t\t\t\t\t\t\n\n\n<div data-schema-only=\"false\" class=\"wp-block-aioseo-faq\"><h3 class=\"aioseo-faq-block-question\">Why is GaN on Sapphire?<\/h3><div class=\"aioseo-faq-block-answer\">\n\n<p>Compared to traditional silicon, constructing GaN devices on sapphire&nbsp;<strong>allows for a much higher operating voltage due to sapphire&#8217;s better insulating properties<\/strong>, critical for emerging EV and three-phase power applications<\/p>\n\n<\/div><\/div>\n\n\n<div class=\"wp-block-uagb-faq uagb-faq__outer-wrap uagb-block-9bd86cc3 uagb-faq-icon-row uagb-faq-layout-accordion uagb-faq-expand-first-true uagb-faq-inactive-other-true uagb-faq__wrap uagb-buttons-layout-wrap uagb-faq-equal-height\" data-faqtoggle=\"true\" role=\"tablist\"><div class=\"wp-block-uagb-faq-child uagb-faq-child__outer-wrap uagb-faq-item uagb-block-4f0e50d1\" role=\"tab\" tabindex=\"0\"><div class=\"uagb-faq-questions-button uagb-faq-questions\">\t\t\t<span class=\"uagb-icon uagb-faq-icon-wrap\">\n\t\t\t\t\t\t\t\t<svg xmlns=\"https:\/\/www.w3.org\/2000\/svg\" viewbox= \"0 0 448 512\"><path d=\"M432 256c0 17.69-14.33 32.01-32 32.01H256v144c0 17.69-14.33 31.99-32 31.99s-32-14.3-32-31.99v-144H48c-17.67 0-32-14.32-32-32.01s14.33-31.99 32-31.99H192v-144c0-17.69 14.33-32.01 32-32.01s32 14.32 32 32.01v144h144C417.7 224 432 238.3 432 256z\"><\/path><\/svg>\n\t\t\t\t\t\t\t<\/span>\n\t\t\t\t\t\t<span class=\"uagb-icon-active uagb-faq-icon-wrap\">\n\t\t\t\t\t\t\t\t<svg xmlns=\"https:\/\/www.w3.org\/2000\/svg\" viewbox= \"0 0 448 512\"><path d=\"M400 288h-352c-17.69 0-32-14.32-32-32.01s14.31-31.99 32-31.99h352c17.69 0 32 14.3 32 31.99S417.7 288 400 288z\"><\/path><\/svg>\n\t\t\t\t\t\t\t<\/span>\n\t\t\t<span class=\"uagb-question\">What size are GaN wafers?<\/span><\/div><div class=\"uagb-faq-content\"><p>XINKEHUI GaN on Sapphire sizes include 4-inch, 6-inch, 8-inch, 12-inch<\/p><\/div><\/div><div class=\"wp-block-uagb-faq-child uagb-faq-child__outer-wrap uagb-faq-item uagb-block-096bc314\" role=\"tab\" tabindex=\"0\"><div class=\"uagb-faq-questions-button uagb-faq-questions\">\t\t\t<span class=\"uagb-icon uagb-faq-icon-wrap\">\n\t\t\t\t\t\t\t\t<svg xmlns=\"https:\/\/www.w3.org\/2000\/svg\" viewbox= \"0 0 448 512\"><path d=\"M432 256c0 17.69-14.33 32.01-32 32.01H256v144c0 17.69-14.33 31.99-32 31.99s-32-14.3-32-31.99v-144H48c-17.67 0-32-14.32-32-32.01s14.33-31.99 32-31.99H192v-144c0-17.69 14.33-32.01 32-32.01s32 14.32 32 32.01v144h144C417.7 224 432 238.3 432 256z\"><\/path><\/svg>\n\t\t\t\t\t\t\t<\/span>\n\t\t\t\t\t\t<span class=\"uagb-icon-active uagb-faq-icon-wrap\">\n\t\t\t\t\t\t\t\t<svg xmlns=\"https:\/\/www.w3.org\/2000\/svg\" viewbox= \"0 0 448 512\"><path d=\"M400 288h-352c-17.69 0-32-14.32-32-32.01s14.31-31.99 32-31.99h352c17.69 0 32 14.3 32 31.99S417.7 288 400 288z\"><\/path><\/svg>\n\t\t\t\t\t\t\t<\/span>\n\t\t\t<span class=\"uagb-question\">What are the substrates for GaN?<\/span><\/div><div class=\"uagb-faq-content\"><p>LEDs and light-emitting diodes. GaN is found on\u00a0<strong>Silicon, SiC, and InGaN<\/strong>\u00a0substrates. These substrates offer several advantages when it comes to designing and manufacturing LEDs.<\/p><\/div><\/div><\/div>\n\n\n<div class=\"wp-block-uagb-advanced-heading uagb-block-20657ad7\"><h2 class=\"uagb-heading-text\">Related Products<\/h2><\/div>\n\n\n\n<div class=\"wp-block-uagb-buttons uagb-buttons__outer-wrap uagb-btn__default-btn uagb-btn-tablet__default-btn uagb-btn-mobile__default-btn uagb-block-c7f180ac\"><div class=\"uagb-buttons__wrap uagb-buttons-layout-wrap\">\n<div class=\"wp-block-uagb-buttons-child uagb-buttons__outer-wrap uagb-block-de40b26a wp-block-button\"><div class=\"uagb-button__wrapper\"><a class=\"uagb-buttons-repeater wp-block-button__link\" href=\"#\" onclick=\"return false;\" rel=\"follow noopener\" target=\"_self\"><div class=\"uagb-button__link\">Wafel GaN<\/div><\/a><\/div><\/div>\n\n\n\n<div class=\"wp-block-uagb-buttons-child uagb-buttons__outer-wrap uagb-block-dbf49d25 wp-block-button\"><div class=\"uagb-button__wrapper\"><a class=\"uagb-buttons-repeater wp-block-button__link\" href=\"https:\/\/www.sic-wafers.com\/pl\/sapphire-substrate-wafer-c-plane%e3%80%81a-plane\/\" onclick=\"return true;\" rel=\"follow noopener\" target=\"_blank\"><div class=\"uagb-button__link\">Wafel szafirowy<\/div><span class=\"uagb-button__icon uagb-button__icon-position-after\"><svg xmlns=\"https:\/\/www.w3.org\/2000\/svg\" viewbox=\"0 0 448 512\"><path d=\"M438.6 278.6l-160 160C272.4 444.9 264.2 448 256 448s-16.38-3.125-22.62-9.375c-12.5-12.5-12.5-32.75 0-45.25L338.8 288H32C14.33 288 .0016 273.7 .0016 256S14.33 224 32 224h306.8l-105.4-105.4c-12.5-12.5-12.5-32.75 0-45.25s32.75-12.5 45.25 0l160 160C451.1 245.9 451.1 266.1 438.6 278.6z\"><\/path><\/svg><\/span><\/a><\/div><\/div>\n\n\n\n<div class=\"wp-block-uagb-buttons-child uagb-buttons__outer-wrap uagb-block-bc7fe27b wp-block-button\"><div class=\"uagb-button__wrapper\"><a class=\"uagb-buttons-repeater wp-block-button__link\" href=\"#\" onclick=\"return false;\" rel=\"follow noopener\" target=\"_self\"><div class=\"uagb-button__link\">SOI<\/div><\/a><\/div><\/div>\n\n\n\n<div class=\"wp-block-uagb-buttons-child uagb-buttons__outer-wrap uagb-block-c34690fd wp-block-button\"><div class=\"uagb-button__wrapper\"><a class=\"uagb-buttons-repeater wp-block-button__link\" href=\"#\" onclick=\"return false;\" rel=\"follow noopener\" target=\"_self\"><div class=\"uagb-button__link\">SOS<\/div><\/a><\/div><\/div>\n<\/div><\/div>\n\n\n\n<p>goto xinkehui:https:\/\/w<a href=\"https:\/\/www.xkh-semitech.com\/6inch-gan-on-sapphire-product\/\" data-type=\"link\" data-id=\"https:\/\/www.xkh-semitech.com\/6inch-gan-on-sapphire-product\/\" rel=\"nofollow noopener\" target=\"_blank\">ww.xkh-semitech.com\/6inch-gan-on-sapphire-product\/<\/a><\/p>","protected":false},"excerpt":{"rendered":"<p>gan on sapphire wafer\uff1a sapphire with gallium nitride substrates particularly in high-voltage applications, such as those requiring vertical gan devices with ratings more than 600 v, vertical gan power devices can potentially transform the power device market. gan devices have a lower on-resistance at a given breakdown voltage compared to both classic silicon-based power devices [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":5449,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"_uag_custom_page_level_css":"","footnotes":""},"categories":[11,217],"tags":[],"class_list":["post-5448","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-products","category-gan-wafers-gan-on-sapphire"],"acf":[],"uagb_featured_image_src":{"full":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/01\/1705822671-\u4e0b\u8f7d.jpeg",225,225,false],"thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/01\/1705822671-\u4e0b\u8f7d-150x150.jpeg",150,150,true],"medium":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/01\/1705822671-\u4e0b\u8f7d.jpeg",225,225,false],"medium_large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/01\/1705822671-\u4e0b\u8f7d.jpeg",225,225,false],"large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/01\/1705822671-\u4e0b\u8f7d.jpeg",225,225,false],"1536x1536":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/01\/1705822671-\u4e0b\u8f7d.jpeg",225,225,false],"2048x2048":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/01\/1705822671-\u4e0b\u8f7d.jpeg",225,225,false],"trp-custom-language-flag":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/01\/1705822671-\u4e0b\u8f7d.jpeg",12,12,false],"woocommerce_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/01\/1705822671-\u4e0b\u8f7d.jpeg",225,225,false],"woocommerce_single":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/01\/1705822671-\u4e0b\u8f7d.jpeg",225,225,false],"woocommerce_gallery_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/01\/1705822671-\u4e0b\u8f7d.jpeg",100,100,false]},"uagb_author_info":{"display_name":"xinkehui","author_link":"https:\/\/www.sic-wafers.com\/pl\/author\/admin\/"},"uagb_comment_info":0,"uagb_excerpt":"gan on sapphire wafer\uff1a sapphire with gallium nitride substrates particularly in high-voltage applications, such as those requiring vertical gan devices with ratings more than 600 v, vertical gan power devices can potentially transform the power device market. gan devices have a lower on-resistance at a given breakdown voltage compared to both classic silicon-based power devices&hellip;","_links":{"self":[{"href":"https:\/\/www.sic-wafers.com\/pl\/wp-json\/wp\/v2\/posts\/5448","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.sic-wafers.com\/pl\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.sic-wafers.com\/pl\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/pl\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/pl\/wp-json\/wp\/v2\/comments?post=5448"}],"version-history":[{"count":3,"href":"https:\/\/www.sic-wafers.com\/pl\/wp-json\/wp\/v2\/posts\/5448\/revisions"}],"predecessor-version":[{"id":5571,"href":"https:\/\/www.sic-wafers.com\/pl\/wp-json\/wp\/v2\/posts\/5448\/revisions\/5571"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/pl\/wp-json\/wp\/v2\/media\/5449"}],"wp:attachment":[{"href":"https:\/\/www.sic-wafers.com\/pl\/wp-json\/wp\/v2\/media?parent=5448"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/pl\/wp-json\/wp\/v2\/categories?post=5448"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/pl\/wp-json\/wp\/v2\/tags?post=5448"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}