SiC wafer 4H-N 4H-SEMI 6H-N 6H-SEMI HPSI in hot demand

SiC wafers’ Application

1. Manufacturing Power Electronic Devices: They find extensive applications in the manufacturing of power electronic devices such as power converters, inverters, and rectifiers.
2. High-Temperature High-Frequency Electronic Devices: Due to SiC’s excellent thermal conductivity and high electron mobility, it excels in the fabrication of high-temperature high-frequency electronic devices, such as high-frequency power amplifiers and high-temperature sensors.
3. Optoelectronic Applications: They have widespread applications in optoelectronics, including the production of photodetectors, laser diodes, and other optical sensors.
4. Semiconductor Lighting: They are used to manufacture high-performance, high-brightness LEDs (Light Emitting Diodes), finding extensive use in the field of illumination.
5. Solar Cells: SiC is utilized as a substrate material in the manufacturing of solar cells, contributing to enhanced efficiency and stability of solar energy cells.
6. Nuclear Energy Sector: Due to SiC’s resistance to radiation, it is employed in the nuclear energy sector for manufacturing structural materials for nuclear reactors.
7. Automotive Electronics: They are widely applied in the power control systems of electric and hybrid vehicles, improving energy conversion efficiency.
8. High-Temperature Sensors: SiC’s high-temperature stability makes it suitable for manufacturing high-temperature sensors used to monitor temperature variations in extreme environments.
9. Microelectronics: They also find application in microelectronics for the production of high-performance and highly reliable integrated circuits.
10. Medical Devices: SiC is utilized in medical devices, including the manufacturing of high-frequency medical equipment and high-temperature sensors.
11. Communication Equipment: They are employed in the manufacturing of high-frequency communication equipment, enhancing the performance and efficiency of communication devices.
12. Power Systems: SiC is used in power systems to manufacture efficient power electronic devices, improving the efficiency of power transmission and distribution.
13. Aerospace Industry: Due to its lightweight and high-temperature performance, SiC is used in the aerospace industry for manufacturing advanced electronics and sensors.
14. High-Performance Computing:They find application in the field of high-performance computing, used to manufacture high-performance processors and memory devices.
15. Radar Systems: SiC is employed in the manufacturing of radar systems for high-frequency, high-power electronic devices, enhancing the performance of radar systems.

SiC wafer’s Parameter table

2inch diameter silicon Carbide(SiC) Substrate Speicfication

Grade	Zero MPD Grade	Production Grade	Research Grade	Dummy Grade
Diameter	50.6mm±0.2mm
Thickness	1000±25um Or other customized thickness
Wafer Orientation	Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI
Micropipe Density	≤0 cm-2	≤2 cm-2	≤5 cm-2	≤30 cm-2
Resistivity 4H-N	0.015~0.028 Ω•cm
Resistivity 4/6H-SI	≥1E7 Ω·cm
Primary Flat	{10-10}±5.0° or round shape
Primary Flat Length	18.5 mm±2.0 mm or round shape
Secondary Flat Length	10.0mm±2.0 mm
Secondary Flat Orientation	Silicon face up: 90° CW. from Prime flat ±5.0°
Edge exclusion	1 mm
TTV/Bow /Warp	≤10μm /≤10μm /≤15μm
Roughness	Polish Ra≤1 nm / CMP Ra≤0.5 nm
Cracks by high intensity light	None		1 allowed, ≤2 mm	Cumulative length ≤ 10mm, single length≤2mm
Hex Plates by high intensity light	Cumulative area ≤1%		Cumulative area ≤1%	Cumulative area ≤3%
Polytype Areas by high intensity light	None		Cumulative area ≤2%	Cumulative area ≤5%
Scratches by high intensity light	3 scratches to 1×wafer diameter cumulative length		5 scratches to 1×wafer diameter cumulative length	5 scratches to 1×wafer diameter cumulative length
edge chip	None		3 allowed, ≤0.5 mm each	5 allowed, ≤1 mm each

SiC ApplicationCatalohue Common Size In our Stock

4H-N Type / High Purity SiC wafer/ingots2 inch 4H N-Type SiC wafer/ingots 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots	4H Semi-insulating / High Purity SiC wafer2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer
6H N-Type SiC wafer 2 inch 6H N-Type SiC wafer/ingot	Customzied size for 2-6inch

The development of Silicon Carbide (SiC) wafers

The development of Silicon Carbide (SiC) wafers has undergone significant advancements, ushering in a new era in semiconductor technology. SiC wafers have emerged as a key player in the electronics industry due to their unique properties and superior performance compared to traditional silicon wafers. In this comprehensive overview, we will delve into the evolution and progress of SiC wafers, covering their properties, applications, and the impact they have had on various sectors.

Introduction to SiC Wafers:

Silicon Carbide (SiC) is a compound semiconductor material that has garnered attention for its remarkable electrical, thermal, and mechanical properties. They are thin slices of single crystal SiC used as a substrate for manufacturing electronic devices. The evolution of They has been driven by the quest for materials that can withstand higher temperatures, higher voltages, and offer enhanced power efficiency compared to conventional silicon-based devices.

Historical Development:

1. Early Exploration (20th Century):
   • The exploration of SiC dates back to the early 20th century, with researchers recognizing its potential for high-temperature applications. However, the initial challenges in producing high-quality single crystal SiC hindered widespread adoption.
2. Improvements in Crystal Growth (1980s-1990s):
   • The 1980s and 1990s witnessed significant strides in crystal growth techniques, leading to the production of high-quality They . Researchers refined methods like sublimation and chemical vapor deposition (CVD), resulting in larger, defect-free crystals.

Properties and Advantages:

1. Wide Bandgap:
   • They possess a wide bandgap, allowing them to operate at higher temperatures and voltages. This property contributes to the efficiency and reliability of electronic devices.
2. High Thermal Conductivity:
   • The excellent thermal conductivity of They enables efficient heat dissipation, making them ideal for high-power electronic applications where heat management is crucial.
3. Chemical and Mechanical Stability:
   • SiC is chemically and mechanically stable, ensuring the durability of devices even in harsh environments. This stability is particularly advantageous in industries such as aerospace and automotive.

Applications:

1. Power Electronics:
   • SiC wafers have revolutionized power electronics, enabling the development of high-performance devices such as power diodes, MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), and IGBTs (Insulated Gate Bipolar Transistors).
2. Automotive Industry:
   • In the automotive sector, SiC wafers are utilized in electric vehicles (EVs) and hybrid electric vehicles (HEVs) for power modules and inverters. The efficiency gains contribute to extended driving ranges.
3. Aerospace and Defense:
   • SiC’s ability to withstand high temperatures and harsh conditions has led to its adoption in aerospace and defense applications. It is used in components such as high-temperature sensors and power modules.
4. Renewable Energy:
   • SiC wafers play a crucial role in renewable energy systems, particularly in solar inverters. Their high efficiency and thermal conductivity enhance the performance of photovoltaic systems.

Market Growth and Industry Impact:

1. Rapid Market Expansion:
   • The demand for SiC wafers has experienced rapid growth, driven by their adoption in various industries. The market is characterized by increased production capacity and ongoing research to further enhance SiC-based devices.
2. Impact on Semiconductor Industry:
   • SiC wafers have disrupted the semiconductor industry by offering solutions to the limitations of traditional silicon. The shift towards SiC-based devices marks a paradigm change in power electronics and high-temperature applications.

Ongoing Research and Future Prospects:

1. Advanced Manufacturing Techniques:
   • Ongoing research focuses on advancing manufacturing techniques, including the development of larger and higher-quality SiC wafers. This is crucial for meeting the increasing demand for SiC-based devices.
2. Integration in More Applications:
   • SiC wafers are expected to find integration into a broader range of applications, including telecommunications, medical electronics, and consumer electronics, as manufacturing processes continue to mature.

Conclusion:

The evolution of Silicon Carbide (SiC) wafers represents a transformative journey in semiconductor technology. From early explorations to overcoming manufacturing challenges, SiC wafers have emerged as a cornerstone in the development of high-performance electronic devices. Their unique properties have opened up new possibilities in power electronics, automotive, aerospace, and renewable energy. As research and development efforts persist, SiC wafers are poised to play an even more significant role in shaping the future of semiconductor applications.