8-Inch (200mm) SiC Epitaxial Wafers for 1200V MOSFETs: Epilayer Thickness, Doping Uniformity, BPD Control and Substrate Requirements
The transition from 150 mm to 200 mm silicon carbide wafers is moving from development programs toward practical device manufacturing. One of the most important applications is the 1200 V SiC MOSFET, widely used in electric vehicles, charging infrastructure, solar inverters, energy storage systems, industrial drives and high-efficiency power conversion. In September 2026, an 8-inch […]