SiC Wafer Specification Guide: Polytype, Doping, Micropipes and How to Choose
1. Introduction Silicon carbide (SiC) has become a cornerstone material in power electronics, RF devices, and harsh-environment applications due to its wide bandgap, high thermal conductivity, and exceptional breakdown field. However, unlike silicon, SiC wafer selection is highly non-trivial. Subtle differences in polytype, doping, and defect density can directly determine device performance, yield, and long-term […]
Custom SiC Wafer Solutions: From Sizes to Doping
SiC wafer have become a foundational material in modern power electronics and high-frequency devices, driven by their superior physical and electrical properties. Compared with conventional silicon, SiC exhibits a wide bandgap (~3.26 eV for 4H-SiC), high thermal conductivity, and a strong critical electric field, enabling devices to operate efficiently under high voltage, high temperature, and […]