{"id":6572,"date":"2024-05-11T16:27:09","date_gmt":"2024-05-11T08:27:09","guid":{"rendered":"https:\/\/www.sic-wafers.com\/?p=6572"},"modified":"2024-05-11T16:27:13","modified_gmt":"2024-05-11T08:27:13","slug":"exceptional-fz-cz-etching-silicon-wafers","status":"publish","type":"post","link":"https:\/\/www.sic-wafers.com\/tr\/exceptional-fz-cz-etching-silicon-wafers\/","title":{"rendered":"Ola\u011fan\u00fcst\u00fc 6 in\u00e7 ve 8 in\u00e7 FZ\/CZ A\u015f\u0131nd\u0131rma Silikon Gofretler - Y\u00fcksek Kimyasal Safl\u0131k, MEMS i\u00e7in E\u015fsiz Performans"},"content":{"rendered":"
<\/div>\n

Etching silicon wafer\u2018s abstarct<\/h2>\n\n\n\n
\"\"<\/a><\/figure>\n\n\n\n

XINKEHUI’s etching silicon wafers are meticulously designed to meet high industry standards, available in both N type and P type classifications. These wafers are engineered to have an exceptionally low surface roughness, which enhances their utility in sensitive electronic applications. The wafers are offered with options for both low and high reflectivity, allowing them to be optimally used in various technological environments depending on the specific light absorption and reflection needs.<\/p>\n\n\n\n

The standout feature of these etching wafers is their remarkable glossiness coupled with a relatively low production cost. This combination makes them highly desirable as they provide a cost-effective alternative to more expensive polished or epitaxial wafers. By substituting these higher-cost wafers, XINKEHUI\u2019s etching wafers offer a significant cost advantage in manufacturing processes, particularly in the production of electronic elements where reducing expenses without sacrificing quality is crucial.<\/p>\n\n\n\n

Furthermore, the adoption of these etching wafers can lead to substantial cost savings in the mass production of electronic components, especially in industries looking to optimize material costs while maintaining high performance and reliability in their electronic devices. This makes XINKEHUI\u2019s etching silicon wafers an invaluable resource for companies aiming to enhance their competitive edge in the market.<\/p>\n\n\n\n

Etching Silicon Wafers\u2019 photos<\/h2>\n\n\n\n
\n
\n
\"etching<\/figure>\n<\/div>\n\n\n\n
\n
\"etching<\/figure>\n<\/div>\n\n\n\n
\n
\"\"<\/figure>\n<\/div>\n\n\n\n
\n
\"\"<\/figure>\n<\/div>\n<\/div><\/div>\n\n\n\n

Etching silicon wafer\u2018s properties<\/h2>\n\n\n\n
    \n
  1. Material Composition<\/strong>: Typically made from high-purity Etching Silicon Wafers, which is essential for achieving the desired electrical properties in semiconductor devices.<\/li>\n\n\n\n
  2. Surface Smoothness<\/strong>: Etching wafers often have extremely smooth surfaces, which is crucial for the deposition of thin films and other materials in device fabrication.<\/li>\n\n\n\n
  3. Dimensional Stability<\/strong>: They maintain their shape and dimensions under the thermal and chemical stresses encountered during various manufacturing processes.<\/li>\n\n\n\n
  4. Thermal Conductivity<\/strong>: Etching Silicon Wafers has good thermal conductivity, which helps dissipate heat generated during device operation, thereby enhancing performance and longevity.<\/li>\n\n\n\n
  5. Electrical Properties<\/strong>: The intrinsic semiconductor nature of Etching Silicon Wafers can be modified through doping to create either p-type or n-type materials, which are fundamental for forming p-n junctions in electronic devices.<\/li>\n\n\n\n
  6. Chemical Resistance<\/strong>: Etching Silicon Wafers is resistant to oxidation and other chemical reactions at room temperature, although it can be etched with specific chemicals under controlled conditions, which is how patterns are created on the wafer.<\/li>\n\n\n\n
  7. Mechanical Strength<\/strong>: Despite being relatively brittle, Etching Silicon Wafers are strong enough to withstand handling and processing without degrading their usability.<\/li>\n<\/ol>\n\n\n\n
    \n
    \n
    \"\"<\/figure><\/div>\n<\/div>\n\n\n\n
    \n


    Silicon (Si) is the predominant semiconductor material used in the technology industry, notable for its ability to be processed into single crystal wafers up to 450 mm in diameter. These wafers are remarkably thin, typically less than 1 mm in thickness, and are circular slices derived from a larger single crystal semiconductor ingot. The geometric arrangement of silicon atoms within the crystal is organized into lattice planes and directions, which are mathematically represented using the Miller Index. This indexing system provides a way to describe vectors normal to the surfaces of specific crystal planes or facets within the cubic lattice structure of the Etching Silicon Wafers.<\/p>\n<\/div>\n<\/div><\/div>\n\n\n\n

    \n
    \n

    In this cubic system, a notation such as [hkl] is employed to denote the orientation of a plane or facet, simplifying the characterization and manipulation of the crystal for various applications. Each silicon crystal is composed of fundamental units that repeat periodically, each with a distinct shape, volume, and composition. These fundamental units are crucial for understanding and exploiting the electronic properties of Etching Silicon Wafersin semiconductor manufacturing. This structured approach to describing and cutting the wafers ensures precision in the creation of semiconductor devices, where consistency and accuracy are paramount.<\/p>\n<\/div>\n\n\n\n

    \n
    \"\"<\/figure>\n<\/div>\n<\/div><\/div>\n\n\n\n

    Crystal Properties<\/h3>\n\n\n\n
    Property<\/th>Value<\/th>Units<\/th><\/tr><\/thead>
    Structure<\/td>Cubic<\/td><\/td><\/tr>
    Space Group<\/td>Fd3m<\/td><\/td><\/tr>
    Atomic weight<\/td>28.0855<\/td><\/td><\/tr>
    Lattice spacing (a0<\/sub>) at 300K<\/td>0.54311<\/td>nm<\/td><\/tr>
    Density at 300K<\/td>2.3290<\/td>g\/cm3<\/sup><\/td><\/tr>
    Nearest Neighbour Distance at 300K<\/td>0.235<\/td>nm<\/td><\/tr>
    Number of atoms in 1 cm3<\/sup><\/td>4.995\u00d71022<\/sup><\/td><\/td><\/tr>
    Isotopes<\/td>28 (92.23%)
    29 (4.67%)
    30 (3.10%)<\/td>    		<\/td><\/tr>
    Electron Shells<\/td>1s2<\/sup>2s2<\/sup>2p6<\/sup>3s2<\/sup>3p2<\/sup><\/td><\/td><\/tr>
    Common Ions<\/td>Si 4 +<\/sup>, Si 4 –<\/sup><\/td><\/td><\/tr>
    Critical Pressure<\/td>1450<\/td>atm<\/td><\/tr>
    Critical Temperature<\/td>4920<\/td>\u00b0C<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

    Band Structure Properties<\/h3>\n\n\n\n
    Property<\/th>Value<\/th>Units<\/th><\/tr><\/thead>
    Dielectric Constant at 300 K (Relative Permittivity (\u03b5r<\/sub>))<\/td>11.7<\/td><\/td><\/tr>
    Dielectric Strength<\/td>100 – 700<\/td>(V\/mil)<\/td><\/tr>
    Loss Tangent<\/td>0.005 (at 1 GHz)
    0.015 (at 10 GHz)<\/td>    		<\/td><\/tr>
    Effective density of states (conduction, Nc<\/sub> T=300 K )<\/td>2.8\u00d71019<\/sup><\/td>cm-3<\/sup><\/td><\/tr>
    Effective density of states (valence, Nv<\/sub> T=300 K )<\/td>1.04\u00d71019<\/sup><\/td>cm-3<\/sup><\/td><\/tr>
    Electron affinity<\/td>133.6<\/td>kJ \/ mol<\/td><\/tr>
    Energy Gap Eg<\/sub> at 300 K (Minimum Indirect Energy Gap at 300 K)<\/td>1.12<\/td>eV<\/td><\/tr>
    Energy Gap Eg<\/sub> at ca. 0 K (Minimum Indirect Energy Gap at 0K)<\/td>1.17 (at 0 K)<\/td>eV<\/td><\/tr>
    Minimum Direct Energy Gap at 300 K<\/td>3.4<\/td>eV<\/td><\/tr>
    Energy separation (E\u0393L<\/sub>)<\/td>4.2<\/td>eV<\/td><\/tr>
    Intrinsic Debye length<\/td>24<\/td>\u00b5m<\/td><\/tr>
    Intrinsic carrier concentration at 300K<\/td>1\u00d71010<\/sup><\/td>cm-3<\/sup><\/td><\/tr>
    Intrinsic carrier concentration at 25\u00b0C<\/td>8.6\u00d7109<\/sup><\/td>cm-3<\/sup><\/td><\/tr>
    Intrinsic resistivity<\/td>3.2\u00d7105<\/sup><\/td>\u03a9\u00d7cm<\/td><\/tr>
    Auger recombination coefficient Cn<\/sub><\/td>1.1\u00d710-30<\/sup><\/td>cm6<\/sup> \/ s<\/td><\/tr>
    Auger recombination coefficient Cp<\/sub><\/td>3\u00d710-31<\/sup><\/td>cm6<\/sup> \/ s<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

    Thermal Properties<\/h3>\n\n\n\n
    Property<\/th>Value<\/th>Units<\/th><\/tr><\/thead>
    Melting point<\/td>1414
    1687<\/td>    		\u00b0C
    K<\/td><\/tr>
    Boiling point<\/td>3538<\/td>K<\/td><\/tr>
    Specific heat<\/td>0.7<\/td>J \/ (g \u00d7 \u00b0C)<\/td><\/tr>
    Thermal conductivity [300K]<\/td>148<\/td>W \/ (m \u00d7 K)<\/td><\/tr>
    Thermal diffusivity<\/td>0.8<\/td>cm2<\/sup>\/s<\/td><\/tr>
    Thermal expansion, linear<\/td>2.6\u00d710-6<\/sup><\/td>\u00b0C -1<\/sup><\/td><\/tr>
    Debye temperature<\/td>640<\/td>K<\/td><\/tr>
    Temperature dependence of band gap<\/td>-2.3e-4<\/td>eV\/K<\/td><\/tr>
    Heat of: fusion \/ vaporization \/ atomization<\/td>39.6 \/ 383.3 \/ 452<\/td>kJ \/ mol<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

    Electrical Properties<\/h3>\n\n\n\n
    Property<\/th>Value<\/th>Units<\/th><\/tr><\/thead>
    Breakdown field<\/td>\u2248 3\u00d7105<\/sup><\/td>V\/cm<\/td><\/tr>
    Index of refraction<\/td>3.42<\/td><\/td><\/tr>
    Mobility electrons<\/td>\u2248 1400<\/td>cm2<\/sup> \/ (V \u00d7 s)<\/td><\/tr>
    Mobility holes<\/td>\u2248 450<\/td>cm2<\/sup> \/ (V \u00d7 s)<\/td><\/tr>
    Diffusion coefficient electrons<\/td>\u2248 36<\/td>cm2<\/sup>\/s<\/td><\/tr>
    Diffusion coefficient holes<\/td>\u2248 12<\/td>cm2<\/sup>\/s<\/td><\/tr>
    Electron thermal velocity<\/td>2.3\u00d7105<\/sup><\/td>m\/s<\/td><\/tr>
    Electronegativity<\/td>1.8<\/td>Pauling`s<\/td><\/tr>
    Hole thermal velocity<\/td>1.65\u00d7105<\/sup><\/td>m\/s<\/td><\/tr>
    Optical phonon energy<\/td>0.063<\/td>eV<\/td><\/tr>
    Density of surface atoms<\/td>(100) 6.78
    (110) 9.59
    (111) 7.83<\/td>    		1014<\/sup>\/cm2<\/sup>
    1014<\/sup>\/cm2<\/sup>
    1014<\/sup>\/cm2<\/sup><\/td><\/tr>
    Work function (intrinsic)<\/td>4.15<\/td>eV<\/td><\/tr>
    Ionization Energies for Various Dopants<\/td>Donors:<\/em>Sb<\/strong> 0.039
    P<\/strong> 0.045
    As<\/strong> 0.054
    Acceptors:<\/em>B<\/strong> 0.045
    Al<\/strong> 0.067
    Ga<\/strong> 0.072
    In<\/strong> 0.16<\/td>
    eV
    eV
    eV

    eV
    eV
    eV
    eV<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

    Mechanical Properties<\/h3>\n\n\n\n
    Property<\/th>Value<\/th>Units<\/th><\/tr><\/thead>
    Bulk modulus of elasticity<\/td>9.8\u00d71011<\/sup><\/td>dyn\/cm2<\/sup><\/td><\/tr>
    Density<\/td>2.329<\/td>g\/cm3<\/sup><\/td><\/tr>
    Hardness<\/td>7<\/td>on the Mohs scale<\/td><\/tr>
    Surface microhardness (using Knoop’s pyramid test)<\/td>1150<\/td>kg\/mm2<\/sup><\/td><\/tr>
    Elastic constants<\/td>C11<\/sub> = 16.60\u00d71011<\/sup>
    C12<\/sub> = 6.40\u00d71011<\/sup>
    C44<\/sub> = 7.96\u00d71011<\/sup><\/td>    		dyn\/cm2<\/sup>
    dyn\/cm2<\/sup>
    dyn\/cm2<\/sup><\/td><\/tr>
    Young’s Modulus (E)<\/td>[100]
    [110]
    [111]<\/td>    		129.5
    168.0
    186.5<\/td>    		GPa
    GPa
    GPa<\/td><\/tr>
    Shear Modulus<\/td>64.1<\/td>GPa<\/td><\/tr>
    Poisson’s Ratio<\/td>0.22 to 0.28<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

    Our Etching Silicon Wafers manufacturing process<\/h2>\n\n\n\n

    From sand to ingot<\/h3>\n\n\n\n
    \n
    \n
    \"\"<\/figure>\n<\/div>\n\n\n\n
    \n

    Silicon, constituting about 27% of the Earth’s crust, ranks as the second most abundant element, following oxygen. It does not occur in its elemental form naturally but exists predominantly as silicon dioxide (SiO2). This compound forms a significant part of sand and various types of rocks.<\/p>\n\n\n\n

    For its application in the semiconductor industry, silicon must be extracted and refined to achieve an ultra-high purity level of approximately 99.9999999% (9N). This purification process involves three energy-intensive steps:<\/p>\n<\/div>\n<\/div><\/div>\n\n\n\n

    \n
    \n