{"id":8195,"date":"2025-12-16T10:57:54","date_gmt":"2025-12-16T02:57:54","guid":{"rendered":"https:\/\/www.sic-wafers.com\/?p=8195"},"modified":"2025-12-16T11:00:57","modified_gmt":"2025-12-16T03:00:57","slug":"challenges-and-opportunities-in-the-packaging-technology-for-silicon-carbide-sic-power-devices","status":"publish","type":"post","link":"https:\/\/www.sic-wafers.com\/tr\/challenges-and-opportunities-in-the-packaging-technology-for-silicon-carbide-sic-power-devices\/","title":{"rendered":"Silisyum Karb\u00fcr (SiC) G\u00fc\u00e7 Cihazlar\u0131 i\u00e7in Paketleme Teknolojisindeki Zorluklar ve F\u0131rsatlar"},"content":{"rendered":"
<\/div>\n

Silisyum Karb\u00fcr<\/a> (SiC), son yirmi y\u0131lda g\u00fc\u00e7 cihazlar\u0131 i\u00e7in geni\u015f bant aral\u0131kl\u0131 bir yar\u0131 iletken malzeme olarak artan bir ilgi g\u00f6rm\u00fc\u015ft\u00fcr. SiC cihazlar, silikon (Si) ile kar\u015f\u0131la\u015ft\u0131r\u0131ld\u0131\u011f\u0131nda daha y\u00fcksek k\u0131r\u0131lma elektrik alanlar\u0131, daha y\u00fcksek anahtarlama h\u0131zlar\u0131, daha iyi termal iletkenlik ve daha y\u00fcksek \u00e7al\u0131\u015fma s\u0131cakl\u0131klar\u0131 gibi \u00f6nemli avantajlar sunmaktad\u0131r. Ancak bu avantajlar\u0131n hayata ge\u00e7irilmesi, parazit end\u00fcktans\u0131n azalt\u0131lmas\u0131, termal performans\u0131n art\u0131r\u0131lmas\u0131 ve y\u00fcksek s\u0131cakl\u0131klarda g\u00fcvenilirli\u011fin sa\u011flanmas\u0131 gibi zorluklar\u0131n \u00fcstesinden gelmek i\u00e7in geli\u015fmi\u015f paketleme teknolojileri gerektirmektedir. Bu makale, d\u00fc\u015f\u00fck parazit end\u00fcktans, y\u00fcksek s\u0131cakl\u0131kta paketleme ve \u00e7ok i\u015flevli entegre paketlemeye odaklanarak SiC g\u00fc\u00e7 cihaz\u0131 paketleme teknolojilerindeki son geli\u015fmelere genel bir bak\u0131\u015f sunmaktad\u0131r. Bu alanlardaki zorluklar ve f\u0131rsatlar da tart\u0131\u015f\u0131lmaktad\u0131r.<\/p>\n\n\n\n

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Giri\u015f:<\/strong>
Silisyum Karb\u00fcr (SiC) g\u00fc\u00e7 cihazlar\u0131, geleneksel silikon cihazlara k\u0131yasla \u00fcst\u00fcn malzeme \u00f6zellikleri nedeniyle g\u00fc\u00e7 elektroni\u011finde devrim yaratmaya haz\u0131rlan\u0131yor. SiC tabanl\u0131 g\u00fc\u00e7 cihazlar\u0131 daha y\u00fcksek frekanslarda, voltajlarda ve s\u0131cakl\u0131klarda \u00e7al\u0131\u015fabilir, bu da elektrikli ara\u00e7lar, yenilenebilir enerji sistemleri ve end\u00fcstriyel g\u00fc\u00e7 elektroni\u011fi dahil olmak \u00fczere \u00e7e\u015fitli uygulamalar i\u00e7in geli\u015fmi\u015f verimlilik ve g\u00fc\u00e7 yo\u011funlu\u011fu sa\u011flar. Bununla birlikte, bu avantajlar ancak SiC cihazlar\u0131n\u0131n benzersiz gereksinimlerini kar\u015f\u0131layan geli\u015fmi\u015f paketleme teknolojilerinin geli\u015ftirilmesiyle tam olarak ger\u00e7ekle\u015ftirilebilir.<\/p>\n\n\n\n

1. D\u00fc\u015f\u00fck Parazitik \u0130nd\u00fcktans Paketleme Teknolojisi:<\/strong>
SiC g\u00fc\u00e7 cihaz\u0131 paketlemesinde parazitik end\u00fcktans\u0131n azalt\u0131lmas\u0131, y\u00fcksek h\u0131zl\u0131 anahtarlama elde etmek ve voltaj a\u015f\u0131m\u0131n\u0131 ve elektromanyetik paraziti (EMI) en aza indirmek i\u00e7in kritik \u00f6neme sahiptir. Silikon cihazlar i\u00e7in yayg\u0131n olarak kullan\u0131lan geleneksel paketleme yap\u0131lar\u0131, b\u00fcy\u00fck anahtarlama d\u00f6ng\u00fcleri ve metal ba\u011f tellerinin kullan\u0131m\u0131 nedeniyle y\u00fcksek parazit end\u00fcktans\u0131ndan muzdariptir. Bu sorunu ele almak i\u00e7in \u00e7e\u015fitli yenilik\u00e7i paketleme teknolojileri geli\u015ftirilmi\u015ftir.<\/p>\n\n\n\n

1.1 Flip-Chip Paketleme:<\/strong>
Arkansas \u00dcniversitesi ekibi taraf\u0131ndan \u00f6nerilen gibi flip-chip paketleme teknolojisi, \u00e7ipi \u00e7evirmek ve arka taraftaki elektrodu \u00f6n elektrotla ayn\u0131 d\u00fczleme ba\u011flamak i\u00e7in metal bir ara ba\u011flant\u0131 kullan\u0131r. Bu, ba\u011flant\u0131 tellerine olan ihtiyac\u0131 ortadan kald\u0131r\u0131r ve parazitik end\u00fcktans\u0131 \u00f6nemli \u00f6l\u00e7\u00fcde azalt\u0131r. Bu paketleme yakla\u015f\u0131m\u0131n\u0131n, geleneksel TO-247 paketlemeye k\u0131yasla cihaz boyutunu 14 kat ve a\u00e7\u0131k durum direncini 24% azaltt\u0131\u011f\u0131 g\u00f6sterilmi\u015ftir.<\/p>\n\n\n\n

1.2 DBC+PCB Hibrit Ambalaj:<\/strong>
Parazitik end\u00fcktans\u0131 azaltmak i\u00e7in bir ba\u015fka \u00e7\u00f6z\u00fcm de Do\u011frudan Ba\u011fl\u0131 Bak\u0131r (DBC) ve Bask\u0131l\u0131 Devre Kartlar\u0131n\u0131 (PCB) hibrit bir ambalaj yap\u0131s\u0131nda birle\u015ftirmektir. \u00c7ip y\u00fczeyinin PCB'ye ba\u011flanmas\u0131yla ak\u0131m d\u00f6ng\u00fcs\u00fc alan\u0131 en aza indirilerek parazit end\u00fcktans\u0131nda \u00f6nemli bir azalma sa\u011flan\u0131r. Bu hibrit paketleme 5nH'nin alt\u0131nda end\u00fcktans de\u011ferlerine ula\u015fabilir ve toplam hacmi 40% azaltabilir.<\/p>\n\n\n\n

1.3 Chip-on-Lead Ara Ba\u011flant\u0131s\u0131:<\/strong>
\u00c7ip-kur\u015fun ba\u011flant\u0131lar\u0131 i\u00e7in do\u011frudan kur\u015fun ba\u011flama (DLB) kullan\u0131m\u0131, ak\u0131m d\u00f6ng\u00fc alan\u0131n\u0131 daha da en aza indirir, b\u00f6ylece parazitik end\u00fcktans\u0131 azalt\u0131r ve s\u0131cakl\u0131k d\u00f6ng\u00fcs\u00fc performans\u0131n\u0131 ve g\u00fcvenilirli\u011fini art\u0131r\u0131r. Bu paketleme tekni\u011fi, ba\u011flant\u0131 tellerine olan ihtiyac\u0131 ortadan kald\u0131rarak SiC g\u00fc\u00e7 cihazlar\u0131 i\u00e7in umut verici bir \u00e7\u00f6z\u00fcm haline getirmektedir.<\/p>\n\n\n\n

1.4 \u00c7ift Tarafl\u0131 So\u011futma Ambalaj\u0131:<\/strong>
Elektrikli ara\u00e7lar i\u00e7in g\u00fc\u00e7 elektroni\u011finde yayg\u0131n olarak kullan\u0131lan \u00e7ift tarafl\u0131 so\u011futma teknolojisi, \u0131s\u0131 da\u011f\u0131l\u0131m\u0131n\u0131 iyile\u015ftirmek i\u00e7in SiC cihazlara uygulanm\u0131\u015ft\u0131r. \u00c7ipin her iki taraf\u0131nda DBC alt tabakalar\u0131 kullan\u0131larak, paket hem \u00fcst hem de alt y\u00fczeylerden e\u015fzamanl\u0131 \u0131s\u0131 da\u011f\u0131l\u0131m\u0131 sa\u011flar. Bu da termal direnci geleneksel paketlemeye k\u0131yasla 38% oran\u0131nda azaltmaktad\u0131r.<\/p>\n\n\n\n

1.5 3D Paketleme Teknolojisi:<\/strong>
3D paketleme teknolojisi, parazitik end\u00fcktans\u0131 azaltmak i\u00e7in SiC'nin dikey yap\u0131s\u0131ndan yararlan\u0131r. Anahtarlama kollar\u0131n\u0131 do\u011frudan \u00fcst \u00fcste istifleyerek, 3D paketleme gereksiz kablolamay\u0131 ortadan kald\u0131r\u0131r ve d\u00f6ng\u00fc end\u00fcktans\u0131n\u0131 \u00f6nemli \u00f6l\u00e7\u00fcde 1nH'nin alt\u0131na d\u00fc\u015f\u00fcr\u00fcr. Bu yakla\u015f\u0131m\u0131n cihaz\u0131n hem verimlili\u011fini hem de g\u00fc\u00e7 yo\u011funlu\u011funu art\u0131rd\u0131\u011f\u0131 g\u00f6sterilmi\u015ftir.<\/p>\n\n\n\n

2. Y\u00fcksek S\u0131cakl\u0131k Paketleme Teknolojisi:<\/strong>
SiC g\u00fc\u00e7 cihazlar\u0131, geleneksel silikon cihazlardan \u00e7ok daha y\u00fcksek olan 300\u00b0C'yi a\u015fan s\u0131cakl\u0131klarda \u00e7al\u0131\u015fmak \u00fczere tasarlanm\u0131\u015ft\u0131r. Ancak, silikon cihazlarda kullan\u0131lan ambalaj malzemeleri ve yap\u0131lar\u0131, g\u00fcvenilirlikleri 150\u00b0C'nin \u00fczerinde \u00f6nemli \u00f6l\u00e7\u00fcde azald\u0131\u011f\u0131 i\u00e7in y\u00fcksek s\u0131cakl\u0131k uygulamalar\u0131 i\u00e7in uygun de\u011fildir. Bu nedenle, y\u00fcksek s\u0131cakl\u0131klara dayanabilen ambalaj malzemelerinin geli\u015ftirilmesi, SiC g\u00fc\u00e7 cihazlar\u0131n\u0131n ba\u015far\u0131s\u0131 i\u00e7in \u00e7ok \u00f6nemlidir.<\/p>\n\n\n\n

2.1 Y\u00fcksek S\u0131cakl\u0131k Ara Ba\u011flant\u0131 Malzemeleri:<\/strong>
Y\u00fcksek s\u0131cakl\u0131k uygulamalar\u0131nda al\u00fcminyum tellerin yerini alan bak\u0131r ba\u011flama telleri, SiC g\u00fc\u00e7 cihazlar\u0131n\u0131n g\u00fcvenilirli\u011fini \u00f6nemli \u00f6l\u00e7\u00fcde art\u0131rmaktad\u0131r. Ayr\u0131ca, bak\u0131r bantlar ve \u015feritler, \u00fcst\u00fcn ak\u0131m ta\u015f\u0131ma kapasiteleri ve \u0131s\u0131 yayma yetenekleri nedeniyle ara\u015ft\u0131r\u0131lmakta ve y\u00fcksek s\u0131cakl\u0131ktaki SiC uygulamalar\u0131 i\u00e7in ideal hale getirilmektedir.<\/p>\n\n\n\n

2.2 Sinterlenmi\u015f G\u00fcm\u00fc\u015f Teknolojisi:<\/strong>
Sinterlenmi\u015f g\u00fcm\u00fc\u015f yap\u0131\u015ft\u0131rma, y\u00fcksek s\u0131cakl\u0131k uygulamalar\u0131 i\u00e7in geleneksel lehimleme tekniklerine bir alternatif olarak ortaya \u00e7\u0131kmaktad\u0131r. Sinterlenmi\u015f g\u00fcm\u00fc\u015f, 200W\/(m-K) termal iletkenli\u011fi ile m\u00fckemmel termal y\u00f6netim ve y\u00fcksek erime noktalar\u0131 sa\u011flayarak SiC g\u00fc\u00e7 cihazlar\u0131 i\u00e7in idealdir. Bununla birlikte, sinterlenmi\u015f g\u00fcm\u00fc\u015f yap\u0131\u015ft\u0131rmay\u0131 optimize etme s\u00fcreci - \u00f6zellikle bas\u0131n\u00e7, s\u0131cakl\u0131k ve zamanla ilgili olarak - aktif bir ara\u015ft\u0131rma alan\u0131 olmaya devam etmektedir.<\/p>\n\n\n\n

2.3 Seramik Y\u00fczeyler ve Metal Taban Plakalar\u0131:<\/strong>
SiC g\u00fc\u00e7 cihazlar\u0131n\u0131n y\u00fcksek s\u0131cakl\u0131kl\u0131 ortamlarda uzun vadeli g\u00fcvenilirli\u011fini sa\u011flamak i\u00e7in, alt tabakalar ve taban plakalar\u0131 y\u00fcksek termal iletkenlik sergilemeli ve SiC'nin termal genle\u015fme katsay\u0131s\u0131na (CTE) uygun olmal\u0131d\u0131r. Al\u00fcminyum Nitr\u00fcr (AlN) ve Berilyum Oksit (BeO) gibi malzemeler m\u00fckemmel termal \u00f6zellikleri nedeniyle de\u011ferlendirilmektedir. Ancak BeO'nun toksisitesi yayg\u0131n kullan\u0131m\u0131n\u0131 s\u0131n\u0131rlarken, AlN'nin y\u00fcksek maliyeti de benimsenmesinin \u00f6n\u00fcnde bir engel te\u015fkil etmektedir.<\/p>\n\n\n\n

3. \u00c7ok Fonksiyonlu Entegre Ambalaj Teknolojisi:<\/strong>
SiC cihazlar\u0131 minyat\u00fcrle\u015ftirme ve daha y\u00fcksek g\u00fc\u00e7 yo\u011funluklar\u0131na do\u011fru itildik\u00e7e, \u00e7ok i\u015flevli entegrasyon giderek daha \u00f6nemli hale gelmektedir. Kondansat\u00f6rlerin, s\u00fcr\u00fcc\u00fclerin, sens\u00f6rlerin ve \u0131s\u0131 al\u0131c\u0131lar\u0131n\u0131n ambalaja entegrasyonu, cihaz\u0131n genel performans\u0131n\u0131 art\u0131rmak i\u00e7in \u00e7ok \u00f6nemlidir.<\/p>\n\n\n\n

3.1 Entegre Kondansat\u00f6rler ve S\u00fcr\u00fcc\u00fcler:<\/strong>
Seramik kapasit\u00f6rlerin do\u011frudan g\u00fc\u00e7 mod\u00fcl\u00fcne entegre edilmesi parazitik end\u00fcktans\u0131 azalt\u0131r ve genel sistem performans\u0131n\u0131 art\u0131r\u0131r. Bununla birlikte, bu kapasit\u00f6rlerin y\u00fcksek s\u0131cakl\u0131k g\u00fcvenilirli\u011fi hala bir zorluktur. Benzer \u015fekilde, Mitsubishi ve Infineon gibi \u015firketlerin SiC ak\u0131ll\u0131 g\u00fc\u00e7 mod\u00fcllerinde (IPM'ler) g\u00f6r\u00fcld\u00fc\u011f\u00fc gibi kap\u0131 s\u00fcr\u00fcc\u00fclerinin mod\u00fcl i\u00e7ine entegre edilmesi mod\u00fcl\u00fcn boyutunu k\u00fc\u00e7\u00fcltmekte ve anahtarlama performans\u0131n\u0131 art\u0131rmaktad\u0131r.<\/p>\n\n\n\n

3.2 Sens\u00f6r Entegrasyonu ve EMI Azaltma:<\/strong>
S\u0131cakl\u0131k, ak\u0131m ve voltaj sens\u00f6rleri, ger\u00e7ek zamanl\u0131 izleme ve kontrol sa\u011flamak i\u00e7in SiC g\u00fc\u00e7 cihazlar\u0131na entegre edilerek sistemin genel performans\u0131n\u0131 ve g\u00fcvenilirli\u011fini art\u0131rmaktad\u0131r. Ayr\u0131ca, elektromanyetik paraziti azaltmak i\u00e7in EMI filtreleri ve ekranlama entegre edilerek end\u00fcstri standartlar\u0131na uygunluk sa\u011flanmaktad\u0131r.<\/p>\n\n\n\n

3.3 Mikrokanal Is\u0131 Emici Entegrasyonu:<\/strong>
Mikro kanall\u0131 \u0131s\u0131 al\u0131c\u0131lar\u0131, \u0131s\u0131 da\u011f\u0131l\u0131m\u0131n\u0131 iyile\u015ftirmek i\u00e7in do\u011frudan g\u00fc\u00e7 mod\u00fcl\u00fcne entegre edilmektedir. Bu teknoloji termal direnci azaltmakta ve SiC g\u00fc\u00e7 cihazlar\u0131n\u0131n genel termal performans\u0131n\u0131 iyile\u015ftirmektedir. Mikrokanal so\u011futman\u0131n mod\u00fcl\u00fcn taban plakas\u0131na entegre edilmesi, termal diren\u00e7te 34%'lik bir azalma sa\u011flayabilir.<\/p>\n\n\n\n

4. Zorluklar ve Gelecek Beklentileri:<\/strong>
SiC paketleme teknolojilerindeki ilerlemelere ra\u011fmen, \u00f6zellikle malzeme geli\u015ftirme, maliyet azaltma ve y\u00fcksek s\u0131cakl\u0131k g\u00fcvenilirli\u011fi alanlar\u0131nda \u00e7e\u015fitli zorluklar devam etmektedir. Daha fazla ara\u015ft\u0131rmaya ihtiya\u00e7 duyulmaktad\u0131r:<\/p>\n\n\n\n

    \n
  1. D\u00fc\u015f\u00fck parazitik end\u00fcktansl\u0131 paketleme yap\u0131lar\u0131n\u0131n performans\u0131n\u0131, \u00f6zellikle g\u00fc\u00e7 d\u00f6ng\u00fcs\u00fc, termal d\u00f6ng\u00fc ve genel g\u00fcvenilirlik a\u00e7\u0131s\u0131ndan do\u011frulay\u0131n.<\/li>\n\n\n\n
  2. Optimum termal iletkenlik ve termal genle\u015fme \u00f6zelliklerine sahip y\u00fcksek s\u0131cakl\u0131k ambalaj malzemeleri geli\u015ftirin.<\/li>\n\n\n\n
  3. Seramik kapasit\u00f6rlerin, sens\u00f6rlerin ve di\u011fer entegre bile\u015fenlerin y\u00fcksek s\u0131cakl\u0131klardaki s\u0131n\u0131rlamalar\u0131n\u0131n \u00fcstesinden gelin.<\/li>\n\n\n\n
  4. SiC g\u00fc\u00e7 cihazlar\u0131n\u0131n termal performans\u0131n\u0131 daha da art\u0131rmak i\u00e7in mikrokanal so\u011futma ve faz de\u011fi\u015fim malzemeleri gibi yeni so\u011futma teknolojilerini ke\u015ffedin.<\/li>\n<\/ol>\n\n\n\n

    Sonu\u00e7 olarak, geli\u015fmi\u015f paketleme teknolojilerinin geli\u015ftirilmesi, SiC g\u00fc\u00e7 cihazlar\u0131n\u0131n t\u00fcm potansiyelini ortaya \u00e7\u0131karman\u0131n anahtar\u0131d\u0131r. Sekt\u00f6r yenilik yapmaya devam ettik\u00e7e, SiC g\u00fc\u00e7 elektroni\u011finin evriminde giderek daha \u00f6nemli bir rol oynayacak ve daha y\u00fcksek verimlilik, daha y\u00fcksek g\u00fc\u00e7 yo\u011funlu\u011fu ve daha g\u00fcvenilir sistemlerin \u00f6n\u00fcn\u00fc a\u00e7acakt\u0131r.<\/p>","protected":false},"excerpt":{"rendered":"

    Silicon Carbide (SiC) has gained increasing attention as a wide-bandgap semiconductor material for power devices over the past two decades. Compared to silicon (Si), SiC devices offer significant advantages such as higher breakdown electric fields, faster switching speeds, better thermal conductivity, and higher operating temperatures. However, the realization of these advantages requires advanced packaging technologies […]<\/p>\n","protected":false},"author":2,"featured_media":8196,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"_uag_custom_page_level_css":"","footnotes":""},"categories":[27],"tags":[1517,1515,1519,1516,1513,1514,1059,1512,1518],"class_list":["post-8195","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-companynews","tag-heat-dissipation","tag-high-temperature-packaging","tag-microchannel-cooling","tag-multifunctional-integration","tag-packaging-technology","tag-parasitic-inductance","tag-power-electronics","tag-silicon-carbide-sic","tag-sintered-silver"],"acf":[],"uagb_featured_image_src":{"full":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/flip-chip-packaging-scaled.webp",2560,1439,false],"thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/flip-chip-packaging-150x150.webp",150,150,true],"medium":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/flip-chip-packaging-300x169.webp",300,169,true],"medium_large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/flip-chip-packaging-768x432.webp",768,432,true],"large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/flip-chip-packaging-1024x576.webp",800,450,true],"1536x1536":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/flip-chip-packaging-1536x864.webp",1536,864,true],"2048x2048":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/flip-chip-packaging-2048x1152.webp",2048,1152,true],"trp-custom-language-flag":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/flip-chip-packaging-scaled.webp",18,10,false],"woocommerce_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/flip-chip-packaging-300x300.webp",300,300,true],"woocommerce_single":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/flip-chip-packaging-600x337.webp",600,337,true],"woocommerce_gallery_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/flip-chip-packaging-100x100.webp",100,100,true]},"uagb_author_info":{"display_name":"lydia","author_link":"https:\/\/www.sic-wafers.com\/tr\/author\/lydia\/"},"uagb_comment_info":0,"uagb_excerpt":"Silicon Carbide (SiC) has gained increasing attention as a wide-bandgap semiconductor material for power devices over the past two decades. Compared to silicon (Si), SiC devices offer significant advantages such as higher breakdown electric fields, faster switching speeds, better thermal conductivity, and higher operating temperatures. However, the realization of these advantages requires advanced packaging technologies…","_links":{"self":[{"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/posts\/8195","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/comments?post=8195"}],"version-history":[{"count":1,"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/posts\/8195\/revisions"}],"predecessor-version":[{"id":8197,"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/posts\/8195\/revisions\/8197"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/media\/8196"}],"wp:attachment":[{"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/media?parent=8195"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/categories?post=8195"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/tags?post=8195"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}