{"id":8718,"date":"2026-03-05T11:24:29","date_gmt":"2026-03-05T03:24:29","guid":{"rendered":"https:\/\/www.sic-wafers.com\/?p=8718"},"modified":"2026-03-05T14:11:37","modified_gmt":"2026-03-05T06:11:37","slug":"300mm-vs-200mm-sic-wafer-cost-analysis-at-what-production-volume-is-the-12-inch-transition-profitable","status":"publish","type":"post","link":"https:\/\/www.sic-wafers.com\/tr\/300mm-vs-200mm-sic-wafer-cost-analysis-at-what-production-volume-is-the-12-inch-transition-profitable\/","title":{"rendered":"300mm vs. 200mm SiC Gofret Maliyet Analizi: 12-\u0130n\u00e7 Ge\u00e7i\u015fi Hangi \u00dcretim Hacminde Karl\u0131?"},"content":{"rendered":"<div style=\"margin-top: 0px; margin-bottom: 0px;\" class=\"sharethis-inline-share-buttons\" ><\/div>\n<p>Silisyum karb\u00fcr (SiC) yongalar, y\u00fcksek g\u00fc\u00e7l\u00fc elektronikler, elektrikli ara\u00e7lar ve geli\u015fmi\u015f yar\u0131 iletken cihazlar i\u00e7in kritik bir malzeme haline gelmi\u015ftir. Daha y\u00fcksek verimli, daha k\u00fc\u00e7\u00fck form fakt\u00f6rl\u00fc cihazlara olan talep artt\u0131k\u00e7a, yar\u0131 iletken \u00fcreticileri stratejik bir kararla kar\u015f\u0131 kar\u015f\u0131ya kalmaktad\u0131r: geleneksel 200 mm (8 in\u00e7) SiC yonga plakalar\u0131ndan <a href=\"https:\/\/www.sic-wafers.com\/tr\/product\/12-inch-4h-n-silicon-carbide-substrates-production-dummy-grades\/\">300 mm (12 in\u00e7) gofretler<\/a>. Daha b\u00fcy\u00fck gofretler cihaz ba\u015f\u0131na maliyet tasarrufu vaat etse de, bu de\u011fi\u015fim \u00f6nemli sermaye yat\u0131r\u0131mlar\u0131, teknik zorluklar ve operasyonel ayarlamalar gerektirmektedir. Ekonomik ve teknik dengeleri anlamak m\u00fchendisler, \u00fcretim m\u00fcd\u00fcrleri ve sat\u0131n alma ekipleri i\u00e7in \u00e7ok \u00f6nemlidir.<\/p>\n\n\n\n<figure class=\"wp-block-image size-full\"><img data-dominant-color=\"bfbeb8\" data-has-transparency=\"false\" style=\"--dominant-color: #bfbeb8;\" fetchpriority=\"high\" decoding=\"async\" width=\"1000\" height=\"1000\" src=\"https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/01\/image.webp\" alt=\"G\u00fc\u00e7 Elektroni\u011fi i\u00e7in Do\u011fru SiC Substrat Nas\u0131l Se\u00e7ilir?\" class=\"wp-image-8379 not-transparent\" srcset=\"https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/01\/image.webp 1000w, https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/01\/image-300x300.webp 300w, https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/01\/image-150x150.webp 150w, https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/01\/image-768x768.webp 768w, https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/01\/image-600x600.webp 600w, https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/01\/image-100x100.webp 100w\" sizes=\"(max-width: 1000px) 100vw, 1000px\" \/><\/figure>\n\n\n\n<h2 class=\"wp-block-heading\"><strong>Neden 300mm SiC Wafer'lar\u0131 D\u00fc\u015f\u00fcnmelisiniz?<\/strong><\/h2>\n\n\n\n<p>300mm yonga plakalar\u0131na \u00f6l\u00e7eklendirme i\u00e7in birincil motivasyon maliyet verimlili\u011fidir. Daha b\u00fcy\u00fck wafer'lar wafer ba\u015f\u0131na daha fazla kal\u0131ba izin vererek cihaz ba\u015f\u0131na maliyeti d\u00fc\u015f\u00fcr\u00fcr. Ayr\u0131ca, 12 in\u00e7lik yonga plakalar\u0131 y\u00fcksek hacimli yar\u0131 iletken \u00fcretim hatlar\u0131yla uyumludur, verimi art\u0131r\u0131r ve modern IC \u00fcretim ekipmanlar\u0131yla daha iyi entegrasyon sa\u011flar.<\/p>\n\n\n\n<p>Ge\u00e7i\u015f s\u00fcrecinin di\u011fer faydalar\u0131 \u015funlard\u0131r:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li><strong>Azalt\u0131lm\u0131\u015f ta\u015f\u0131ma ve i\u015fleme ek y\u00fck\u00fc<\/strong>: Ayn\u0131 say\u0131da kal\u0131p elde etmek i\u00e7in daha az gofret gerekir.<\/li>\n\n\n\n<li><strong>Geli\u015ftirilmi\u015f verim \u00f6l\u00e7eklenebilirli\u011fi<\/strong>: Geli\u015fmi\u015f s\u00fcre\u00e7 kontrol\u00fc, daha fazla cihazdaki kusur etkisini azaltabilir.<\/li>\n\n\n\n<li><strong>Gelecekteki cihaz trendleriyle uyum<\/strong>: Y\u00fcksek g\u00fc\u00e7 ve elektrikli ara\u00e7 uygulamalar\u0131, MOSFET'ler, IGBT'ler ve Schottky diyotlar\u0131 gibi cihazlar i\u00e7in giderek daha b\u00fcy\u00fck, y\u00fcksek kaliteli gofretler talep etmektedir.<\/li>\n<\/ul>\n\n\n\n<p>Ancak bu faydalar, dikkatle de\u011ferlendirilmesi gereken daha y\u00fcksek sermaye harcamas\u0131 (CAPEX) ve potansiyel olarak daha y\u00fcksek operasyonel karma\u015f\u0131kl\u0131k pahas\u0131na gelmektedir.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\"><strong>Maliyet Yap\u0131s\u0131 Kar\u015f\u0131la\u015ft\u0131rmas\u0131: 200mm ve 300mm Yonga Levhalar\u0131<\/strong><\/h2>\n\n\n\n<p>Yonga plakas\u0131 \u00f6l\u00e7eklendirme ekonomisi \u00e7e\u015fitli fakt\u00f6rlere ba\u011fl\u0131d\u0131r:<\/p>\n\n\n\n<ol class=\"wp-block-list\">\n<li><strong>Kristal B\u00fcy\u00fctme ve Wafer \u00dcretimi<\/strong>\n<ul class=\"wp-block-list\">\n<li><strong>200mm gofretler<\/strong>: \u0130yi kurulmu\u015f PVT veya EFG s\u00fcre\u00e7leri, olgun verim oranlar\u0131, gofret ba\u015f\u0131na daha d\u00fc\u015f\u00fck kusur yo\u011funlu\u011fu.<\/li>\n\n\n\n<li><strong>300mm gofretler<\/strong>: Yeniden tasarlanm\u0131\u015f kristal b\u00fcy\u00fcme reakt\u00f6rleri, daha s\u0131k\u0131 termal gradyan kontrol\u00fc ve daha uzun b\u00fcy\u00fcme s\u00fcreleri gerektirir, bu da gofret ba\u015f\u0131na maliyeti art\u0131r\u0131r.<\/li>\n<\/ul>\n<\/li>\n\n\n\n<li><strong>\u0130\u015fleme Ekipman\u0131 Uyumlulu\u011fu<\/strong>\n<ul class=\"wp-block-list\">\n<li>Daha b\u00fcy\u00fck yonga plakalar\u0131, epitaksiyel b\u00fcy\u00fctme, parlatma, kesme ve paketleme i\u00e7in de\u011fi\u015ftirilmi\u015f veya yeni ekipman gerektirebilir.<\/li>\n\n\n\n<li>300mm'lik bir hat i\u00e7in sermaye maliyetleri \u015funlar olabilir <strong>2-3 kat daha y\u00fcksek<\/strong> otomasyon ve verimlili\u011fe ba\u011fl\u0131 olarak 200 mm'lik bir hattan daha fazla.<\/li>\n<\/ul>\n<\/li>\n\n\n\n<li><strong>Verim Hususlar\u0131<\/strong>\n<ul class=\"wp-block-list\">\n<li>Daha b\u00fcy\u00fck wafer'larda nihai kal\u0131b\u0131 etkileyen kusur olas\u0131l\u0131\u011f\u0131 daha y\u00fcksektir.<\/li>\n\n\n\n<li>D\u00fc\u015f\u00fck kusur yo\u011funlu\u011fu (&lt;1 cm^-2) elde etmek, cihaz ba\u015f\u0131na maliyet avantaj\u0131n\u0131n ger\u00e7ekle\u015fmesini sa\u011flamak i\u00e7in kritik \u00f6neme sahiptir.<\/li>\n<\/ul>\n<\/li>\n\n\n\n<li><strong>Operasyonel Maliyetler (OPEX)<\/strong>\n<ul class=\"wp-block-list\">\n<li>Enerji t\u00fcketimi, gaz kullan\u0131m\u0131 ve bak\u0131m maliyetleri yonga plakas\u0131 boyutuyla birlikte artar.<\/li>\n\n\n\n<li>Personel e\u011fitimi ve s\u00fcre\u00e7 optimizasyonu dolayl\u0131 operasyonel maliyetleri art\u0131r\u0131r.<\/li>\n<\/ul>\n<\/li>\n<\/ol>\n\n\n\n<h3 class=\"wp-block-heading\"><strong>Kal\u0131p Ba\u015f\u0131na Maliyet Analizi<\/strong><\/h3>\n\n\n\n<p>Basitle\u015ftirilmi\u015f bir senaryo d\u00fc\u015f\u00fcnelim:<\/p>\n\n\n\n<figure class=\"wp-block-table\"><table class=\"has-fixed-layout\"><thead><tr><th>Parametre<\/th><th>200mm Gofret<\/th><th>300mm Wafer<\/th><\/tr><\/thead><tbody><tr><td>Wafer alan\u0131<\/td><td>31.400 mm\u00b2<\/td><td>70.700 mm\u00b2<\/td><\/tr><tr><td>Kal\u0131p boyutu<\/td><td>50 mm\u00b2<\/td><td>50 mm\u00b2<\/td><\/tr><tr><td>Gofret ba\u015f\u0131na kal\u0131p (ideal)<\/td><td>628<\/td><td>1,414<\/td><\/tr><tr><td>Wafer maliyeti<\/td><td>$4,000<\/td><td>$10,000<\/td><\/tr><tr><td>Kusur etkisi<\/td><td>5%<\/td><td>8%<\/td><\/tr><tr><td>Gofret ba\u015f\u0131na etkin kal\u0131plar<\/td><td>597<\/td><td>1,300<\/td><\/tr><tr><td>Kal\u0131p ba\u015f\u0131na maliyet<\/td><td>~$6.70<\/td><td>~$7.70<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n<p><strong>G\u00f6zlem:<\/strong> D\u00fc\u015f\u00fck hacimlerde, 300mm wafer'lar daha y\u00fcksek CAPEX ve OPEX nedeniyle uygun maliyetli olmayabilir. Ancak \u00fcretim hacmi artt\u0131k\u00e7a kal\u0131p ba\u015f\u0131na maliyet avantaj\u0131 ortaya \u00e7\u0131kar \u00e7\u00fcnk\u00fc daha az say\u0131da yonga plakas\u0131na ihtiya\u00e7 duyulur ve bu da ta\u015f\u0131ma, temizleme ve i\u015fleme giderlerini azalt\u0131r.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\"><strong>K\u00e2rl\u0131l\u0131k i\u00e7in \u00dcretim Hacmi E\u015fi\u011fi<\/strong><\/h2>\n\n\n\n<p>Bu <strong>ba\u015fa ba\u015f noktas\u0131<\/strong> \u00e7e\u015fitli fakt\u00f6rlere ba\u011fl\u0131d\u0131r:<\/p>\n\n\n\n<ol class=\"wp-block-list\">\n<li><strong>Wafer maliyet fark\u0131<\/strong>: Daha y\u00fcksek 300mm yonga plakas\u0131 maliyeti, CAPEX'i amorti etmek i\u00e7in yeterli verim gerektirir.<\/li>\n\n\n\n<li><strong>Verim optimizasyonu<\/strong>: Etkili hata kontrol\u00fc kritik \u00f6nem ta\u015f\u0131r. Daha b\u00fcy\u00fck wafer'larda 10% daha y\u00fcksek hata oran\u0131 maliyet avantajlar\u0131n\u0131 dengeleyebilir.<\/li>\n\n\n\n<li><strong>Ekipman kullan\u0131m\u0131<\/strong>: Reakt\u00f6r \u00e7al\u0131\u015fma s\u00fcresinin ve proses verimlili\u011finin en \u00fcst d\u00fczeye \u00e7\u0131kar\u0131lmas\u0131 \u00f6l\u00e7ek ekonomisi sa\u011flar.<\/li>\n<\/ol>\n\n\n\n<p>Sekt\u00f6r analizleri, SiC g\u00fc\u00e7 elektroni\u011fi i\u00e7in 12 in\u00e7lik ge\u00e7i\u015fin, kusur yo\u011funluklar\u0131n\u0131n kontrol edildi\u011fi ve s\u00fcre\u00e7 verimlili\u011finin optimize edildi\u011fi varsay\u0131ld\u0131\u011f\u0131nda, y\u0131lda 50.000-100.000 wafer'\u0131 a\u015fan \u00fcretim hacimlerinde karl\u0131 hale geldi\u011fini g\u00f6stermektedir.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\"><strong>Maliyeti Etkileyen Teknik Zorluklar<\/strong><\/h2>\n\n\n\n<p>300mm SiC yonga plakalar\u0131na ge\u00e7i\u015f sadece ekonomik de\u011fildir; teknik engeller de karl\u0131l\u0131\u011f\u0131 etkilemektedir:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li><strong>Termal Stres Y\u00f6netimi<\/strong>: Daha b\u00fcy\u00fck gofretler e\u011filmeye ve \u00e7atlamaya kar\u015f\u0131 daha hassast\u0131r. Reakt\u00f6r tasar\u0131m\u0131, d\u00fczl\u00fc\u011f\u00fc ve homojenli\u011fi korumak i\u00e7in termal gradyanlar\u0131 azaltmal\u0131d\u0131r.<\/li>\n\n\n\n<li><strong>Epitaksiyel Katman D\u00fczg\u00fcnl\u00fc\u011f\u00fc<\/strong>: Tutarl\u0131 EPI katman kal\u0131nl\u0131\u011f\u0131n\u0131 ve katk\u0131s\u0131n\u0131 12 in\u00e7lik yonga plakalar\u0131nda korumak, 200 mm'lik yonga plakalar\u0131na g\u00f6re daha zordur.<\/li>\n\n\n\n<li><strong>Kristal B\u00fcy\u00fcme S\u00fcresi<\/strong>: 300 mm yonga levhalar\u0131 i\u00e7in b\u00fcy\u00fcme s\u00fcresi daha uzundur ve verimi etkiler. PVT veya EFG s\u00fcre\u00e7lerinin optimizasyonu \u00e7ok \u00f6nemlidir.<\/li>\n<\/ul>\n\n\n\n<p>Bu zorluklar\u0131n \u00fcstesinden gelmek i\u00e7in Ar-Ge yat\u0131r\u0131m\u0131 ve pilot \u00fcretim gerekebilir, bu da ba\u015fa ba\u015f noktas\u0131n\u0131 daha da etkileyebilir.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\"><strong>\u00dcreticiler i\u00e7in Stratejik Hususlar<\/strong><\/h2>\n\n\n\n<p>Ge\u00e7i\u015fi de\u011ferlendiren \u015firketler i\u00e7in birka\u00e7 stratejik nokta karar verme s\u00fcrecine rehberlik etmelidir:<\/p>\n\n\n\n<ol class=\"wp-block-list\">\n<li><strong>Yonga plakas\u0131 boyutunu pazar talebiyle uyumlu hale getirin<\/strong>: M\u00fc\u015fteriler y\u00fcksek hacimli EV veya end\u00fcstriyel g\u00fc\u00e7 cihazlar\u0131na ihtiya\u00e7 duyuyorsa, 300mm waferlar uzun vadeli avantajlar sunar.<\/li>\n\n\n\n<li><strong>S\u00fcre\u00e7 optimizasyonuna yat\u0131r\u0131m yap\u0131n<\/strong>: Kal\u0131p ba\u015f\u0131na maliyet avantajlar\u0131n\u0131 ger\u00e7ekle\u015ftirmek i\u00e7in verim iyile\u015ftirme, kusur azaltma ve homojenli\u011fe odaklan\u0131n.<\/li>\n\n\n\n<li><strong>A\u015famal\u0131 benimsemeyi d\u00fc\u015f\u00fcn\u00fcn<\/strong>: Hem 200mm hem de 300mm yonga plakalar\u0131n\u0131 muhafaza eden hibrit \u00fcretim hatlar\u0131, riski y\u00f6netirken kademeli \u00f6l\u00e7eklendirmeye olanak tan\u0131r.<\/li>\n\n\n\n<li>Otomasyon ve izlemeden yararlan\u0131n: Ger\u00e7ek zamanl\u0131 s\u00fcre\u00e7 kontrol\u00fc, operasyonel de\u011fi\u015fkenli\u011fi azalt\u0131r ve daha b\u00fcy\u00fck yonga plakalar\u0131nda kalite sa\u011flar.<\/li>\n<\/ol>\n\n\n\n<h2 class=\"wp-block-heading\"><strong>Sonu\u00e7<\/strong><\/h2>\n\n\n\n<p>300mm SiC wafer'lar kal\u0131p ba\u015f\u0131na \u00f6nemli maliyet tasarruflar\u0131 ve geli\u015fmi\u015f verim vaat ederken, karl\u0131l\u0131\u011fa ula\u015fmak \u00fcretim hacmi, hata y\u00f6netimi ve ekipman yat\u0131r\u0131m\u0131n\u0131n dikkatli bir \u015fekilde de\u011ferlendirilmesini gerektirir. 12-in\u00e7 SiC yonga plakalar\u0131n\u0131n teknik ve operasyonel zorluklar\u0131n\u0131n \u00fcstesinden gelen \u015firketler, hem ekonomik hem de teknolojik avantajlar elde ederek y\u00fcksek g\u00fc\u00e7l\u00fc elektronik ve elektrikli ara\u00e7 pazarlar\u0131nda lider olarak konumlanacakt\u0131r.<\/p>\n\n\n\n<p>Sonu\u00e7 olarak, ge\u00e7i\u015f sadece yonga plakas\u0131 boyutuyla de\u011fil, stratejik planlama, s\u00fcre\u00e7 kontrol\u00fc ve \u00fcretim verimlili\u011fiyle ilgili bir konudur. Karar vericiler, 300mm SiC yonga plakas\u0131 teknolojisini benimsemenin en uygun noktas\u0131n\u0131 belirlemek i\u00e7in CAPEX, OPEX, verim ve pazar talebini dengelemelidir.<\/p>","protected":false},"excerpt":{"rendered":"<p>Silicon carbide (SiC) wafers have become a critical material for high-power electronics, electric vehicles, and advanced semiconductor devices. As the demand for higher efficiency, smaller form-factor devices grows, semiconductor manufacturers face a strategic decision: whether to transition from conventional 200mm (8-inch) SiC wafers to 300mm (12-inch) wafers. While larger wafers promise cost savings per device, [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":8379,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"_uag_custom_page_level_css":"","footnotes":""},"categories":[12,27],"tags":[1139,1491,1800,1950,1955,1259,1203,1959,1802,1951,1225,1320,1168,1170,1266,1811,1953,1960,1954],"class_list":["post-8718","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-news","category-companynews","tag-12-inch-wafer","tag-300mm-sic-wafer","tag-dislocations","tag-efg-sic","tag-epitaxial-layer-uniformity","tag-ev-power-devices","tag-high-power-electronics","tag-large-diameter-sic","tag-micropipes","tag-pvt-sic","tag-semiconductor-manufacturing","tag-sic-crystal-growth","tag-sic-substrate","tag-sic-wafer","tag-silicon-carbide-wafer","tag-stacking-faults","tag-thermal-gradient-control","tag-wafer-defects","tag-wafer-warpage"],"acf":[],"uagb_featured_image_src":{"full":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/01\/image.webp",1000,1000,false],"thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/01\/image-150x150.webp",150,150,true],"medium":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/01\/image-300x300.webp",300,300,true],"medium_large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/01\/image-768x768.webp",768,768,true],"large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/01\/image.webp",800,800,false],"1536x1536":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/01\/image.webp",1000,1000,false],"2048x2048":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/01\/image.webp",1000,1000,false],"trp-custom-language-flag":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/01\/image.webp",12,12,false],"woocommerce_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/01\/image-300x300.webp",300,300,true],"woocommerce_single":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/01\/image-600x600.webp",600,600,true],"woocommerce_gallery_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/01\/image-100x100.webp",100,100,true]},"uagb_author_info":{"display_name":"lydia","author_link":"https:\/\/www.sic-wafers.com\/tr\/author\/lydia\/"},"uagb_comment_info":0,"uagb_excerpt":"Silicon carbide (SiC) wafers have become a critical material for high-power electronics, electric vehicles, and advanced semiconductor devices. As the demand for higher efficiency, smaller form-factor devices grows, semiconductor manufacturers face a strategic decision: whether to transition from conventional 200mm (8-inch) SiC wafers to 300mm (12-inch) wafers. While larger wafers promise cost savings per device,&hellip;","_links":{"self":[{"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/posts\/8718","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/comments?post=8718"}],"version-history":[{"count":1,"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/posts\/8718\/revisions"}],"predecessor-version":[{"id":8719,"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/posts\/8718\/revisions\/8719"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/media\/8379"}],"wp:attachment":[{"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/media?parent=8718"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/categories?post=8718"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/tags?post=8718"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}