{"id":8734,"date":"2026-03-09T16:54:02","date_gmt":"2026-03-09T08:54:02","guid":{"rendered":""},"modified":"2026-03-09T16:55:08","modified_gmt":"2026-03-09T08:55:08","slug":"high-purity-sic-crystal-growth-precision-manufacturing-standards","status":"publish","type":"post","link":"https:\/\/www.sic-wafers.com\/tr\/high-purity-sic-crystal-growth-precision-manufacturing-standards\/","title":{"rendered":"Y\u00fcksek Safl\u0131kta SiC Kristal B\u00fcy\u00fctme: Hassas \u00dcretim Standartlar\u0131"},"content":{"rendered":"
<\/div>\n

Silisyum Karb\u00fcr, modern g\u00fc\u00e7 elektroni\u011fi ve y\u00fcksek s\u0131cakl\u0131k uygulamalar\u0131nda en \u00f6nemli geni\u015f bant aral\u0131kl\u0131 yar\u0131 iletken malzemelerden biri olarak ortaya \u00e7\u0131km\u0131\u015ft\u0131r. Silisyum gibi geleneksel yar\u0131 iletken malzemelerle kar\u015f\u0131la\u015ft\u0131r\u0131ld\u0131\u011f\u0131nda SiC, elektrikli ara\u00e7lar, yenilenebilir enerji sistemleri ve y\u00fcksek frekansl\u0131 g\u00fc\u00e7 elektroni\u011fi i\u00e7in y\u00fcksek verimli cihazlar\u0131n geli\u015ftirilmesini sa\u011flayan \u00fcst\u00fcn elektriksel, termal ve mekanik \u00f6zellikler sunar.<\/p>\n\n\n\n

Ancak, yar\u0131 iletken cihazlar i\u00e7in uygun y\u00fcksek safl\u0131kta SiC kristalleri \u00fcretmek son derece zordur. Kristal b\u00fcy\u00fctme s\u0131cakl\u0131k, bas\u0131n\u00e7, safs\u0131zl\u0131k ve kusur olu\u015fumunun s\u0131k\u0131 bir \u015fekilde kontrol edilmesini gerektirir. Sonu\u00e7 olarak, hassas \u00fcretim standartlar\u0131 SiC gofretlerin kalitesini, g\u00fcvenilirli\u011fini ve \u00f6l\u00e7eklenebilirli\u011fini sa\u011flamada \u00f6nemli bir fakt\u00f6r haline gelmi\u015ftir.<\/p>\n\n\n\n

Bu makale a\u015fa\u011f\u0131dakilere genel bir bak\u0131\u015f sunmaktad\u0131r y\u00fcksek safl\u0131kta SiC<\/a> kristal b\u00fcy\u00fctme teknolojileri ve yar\u0131 iletken s\u0131n\u0131f\u0131 SiC alt tabakalar\u0131n \u00fcretimine rehberlik eden hassas \u00fcretim standartlar\u0131.<\/p>\n\n\n\n

\"\"<\/figure>\n\n\n\n

Y\u00fcksek Safl\u0131kta SiC Kristalleri Neden \u00d6nemlidir?<\/h2>\n\n\n\n

SiC g\u00fc\u00e7 cihazlar\u0131n\u0131n performans\u0131 b\u00fcy\u00fck \u00f6l\u00e7\u00fcde altta yatan kristal alt tabakan\u0131n kalitesine ba\u011fl\u0131d\u0131r. Kristal yap\u0131daki k\u00fc\u00e7\u00fck kusurlar bile cihaz verimlili\u011fini ve g\u00fcvenilirli\u011fini \u00f6nemli \u00f6l\u00e7\u00fcde etkileyebilir.<\/p>\n\n\n\n

Yar\u0131 iletken s\u0131n\u0131f\u0131 SiC kristalleri i\u00e7in temel gereksinimler \u015funlard\u0131r:<\/p>\n\n\n\n

Parametre<\/th>Tipik Gereksinim<\/th><\/tr><\/thead>
Kimyasal safl\u0131k<\/td>\u2265 99,9999% (6N)<\/td><\/tr>
Mikro boru yo\u011funlu\u011fu<\/td>< 1 cm-\u00b2<\/td><\/tr>
Dislokasyon yo\u011funlu\u011fu<\/td>< 10\u2074 cm-\u00b2<\/td><\/tr>
Gofret \u00e7ap\u0131<\/td>100 mm - 200 mm (4-8 in\u00e7)<\/td><\/tr>
Y\u00fczey p\u00fcr\u00fczl\u00fcl\u00fc\u011f\u00fc<\/td>< 0,5 nm (parlatma i\u015fleminden sonra)<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

Y\u00fcksek safl\u0131ktaki SiC kristalleri, \u00fcreticilerin a\u015fa\u011f\u0131daki gibi geli\u015fmi\u015f cihazlar \u00fcretmesine olanak tan\u0131r:<\/p>\n\n\n\n

    \n
  • SiC MOSFET'ler<\/li>\n\n\n\n
  • Schottky bariyer diyotlar\u0131<\/li>\n\n\n\n
  • Y\u00fcksek s\u0131cakl\u0131k sens\u00f6rleri<\/li>\n\n\n\n
  • RF ve mikrodalga bile\u015fenleri<\/li>\n<\/ul>\n\n\n\n

    Bu cihazlar, modern elektroniklerde g\u00fc\u00e7 d\u00f6n\u00fc\u015f\u00fcm verimlili\u011fini art\u0131rmak i\u00e7in kritik \u00f6neme sahiptir.<\/p>\n\n\n\n

    Fiziksel Buhar Ta\u015f\u0131ma (PVT) B\u00fcy\u00fctme Y\u00f6ntemi<\/h2>\n\n\n\n

    Y\u0131\u011f\u0131n SiC kristallerini b\u00fcy\u00fctmek i\u00e7in en yayg\u0131n kullan\u0131lan y\u00f6ntem Fiziksel Buhar Ta\u015f\u0131n\u0131m\u0131 (PVT)<\/strong> tekni\u011fi olarak da bilinen s\u00fcblimasyon y\u00f6ntemi<\/strong>.<\/p>\n\n\n\n

    Temel S\u00fcre\u00e7<\/h3>\n\n\n\n

    PVT s\u00fcrecinde:<\/p>\n\n\n\n

      \n
    1. Y\u00fcksek safl\u0131kta SiC tozu bir grafit potan\u0131n dibine yerle\u015ftirilir.<\/li>\n\n\n\n
    2. Krozenin \u00fcst k\u0131sm\u0131na bir tohum kristali monte edilmi\u015ftir.<\/li>\n\n\n\n
    3. Sistem \u015fu s\u0131cakl\u0131\u011fa kadar \u0131s\u0131t\u0131l\u0131r 2000-2400 \u00b0C<\/strong> inert bir atmosferde, tipik olarak argon.<\/li>\n\n\n\n
    4. SiC tozu gaz halindeki t\u00fcrlere s\u00fcblimle\u015fir.<\/li>\n\n\n\n
    5. Buhar yukar\u0131 do\u011fru hareket eder ve tohum kristali \u00fczerinde yeniden kristalle\u015ferek toplu bir SiC k\u00fcl\u00e7esi olu\u015fturur.<\/li>\n<\/ol>\n\n\n\n

      Bu s\u00fcre\u00e7, yar\u0131 iletken uygulamalar\u0131 i\u00e7in gerekli safl\u0131k seviyelerini korurken b\u00fcy\u00fck tek kristallerin kontroll\u00fc b\u00fcy\u00fcmesini sa\u011flar.<\/p>\n\n\n\n

      Temel Avantajlar<\/h3>\n\n\n\n
        \n
      • Y\u00fcksek kristal safl\u0131\u011f\u0131<\/li>\n\n\n\n
      • Nispeten istikrarl\u0131 b\u00fcy\u00fcme ortam\u0131<\/li>\n\n\n\n
      • Daha b\u00fcy\u00fck yonga plakas\u0131 \u00e7aplar\u0131na \u00f6l\u00e7eklenebilir<\/li>\n\n\n\n
      • End\u00fcstriyel \u00fcretim ile uyumlu<\/li>\n<\/ul>\n\n\n\n

        Bu avantajlara ra\u011fmen, tutarl\u0131 kristal kalitesini korumak s\u0131k\u0131 \u00fcretim kontrol\u00fc gerektirir.<\/p>\n\n\n\n

        SiC Kristal B\u00fcy\u00fctmede Hassas \u00dcretim Standartlar\u0131<\/h2>\n\n\n\n

        Modern SiC kristal b\u00fcy\u00fcmesi, malzeme m\u00fchendisli\u011fi, termal y\u00f6netim ve s\u00fcre\u00e7 izlemenin bir kombinasyonuna dayan\u0131r. \u00dcretim boyunca \u00e7e\u015fitli hassas standartlar korunmal\u0131d\u0131r.<\/p>\n\n\n\n

        1. Ultra Y\u00fcksek Safl\u0131kta Hammaddeler<\/h3>\n\n\n\n

        Al\u00fcminyum, bor ve nitrojen gibi safs\u0131zl\u0131klar SiC'nin elektriksel \u00f6zelliklerini \u00f6nemli \u00f6l\u00e7\u00fcde de\u011fi\u015ftirebilir. Bu nedenle, kristal b\u00fcy\u00fctmede kullan\u0131lan hammaddeler son derece kat\u0131 safl\u0131k gereksinimlerini kar\u015f\u0131lamal\u0131d\u0131r.<\/p>\n\n\n\n

        Tipik standartlar \u015funlar\u0131 i\u00e7erir:<\/p>\n\n\n\n

          \n
        • 6N veya daha y\u00fcksek safl\u0131kta SiC kaynak tozu<\/li>\n\n\n\n
        • Y\u00fcksek safl\u0131kta grafit potalar<\/li>\n\n\n\n
        • Ultra temiz f\u0131r\u0131n ortamlar\u0131<\/li>\n<\/ul>\n\n\n\n

          Kirlilik kontrol\u00fc kritik \u00f6nem ta\u015f\u0131r \u00e7\u00fcnk\u00fc eser miktardaki safs\u0131zl\u0131klar bile kristal kafeste derin seviyeli kusurlara yol a\u00e7abilir.<\/p>\n\n\n\n

          2. S\u0131cakl\u0131k Alan Kontrol\u00fc<\/h3>\n\n\n\n

          SiC kristal b\u00fcy\u00fcmesi son derece y\u00fcksek s\u0131cakl\u0131klarda ger\u00e7ekle\u015fir, bu da termal kararl\u0131l\u0131\u011f\u0131 en \u00f6nemli proses parametrelerinden biri haline getirir.<\/p>\n\n\n\n

          Hassas kontrol \u015funlar\u0131 i\u00e7erir:<\/p>\n\n\n\n

            \n
          • Optimize edilmi\u015f f\u0131r\u0131n yal\u0131t\u0131m tasar\u0131m\u0131<\/li>\n\n\n\n
          • \u00c7ok b\u00f6lgeli \u0131s\u0131tma sistemleri<\/li>\n\n\n\n
          • Kontroll\u00fc termal gradyanlar<\/li>\n<\/ul>\n\n\n\n

            Kararl\u0131 bir s\u0131cakl\u0131k gradyan\u0131, d\u00fczg\u00fcn kristal b\u00fcy\u00fcmesini sa\u011flar ve istifleme hatalar\u0131 ve \u00e7\u0131k\u0131klar gibi yap\u0131sal kusurlar\u0131 en aza indirir.<\/p>\n\n\n\n

            3. Kusur Yo\u011funlu\u011fu Y\u00f6netimi<\/h3>\n\n\n\n

            SiC \u00fcretimindeki en b\u00fcy\u00fck zorluklardan biri kristal kusurlar\u0131n\u0131 kontrol etmektir. Yayg\u0131n kusurlar \u015funlar\u0131 i\u00e7erir:<\/p>\n\n\n\n

              \n
            • Mikropipler<\/li>\n\n\n\n
            • Di\u015f a\u00e7ma vidas\u0131 \u00e7\u0131k\u0131klar\u0131<\/li>\n\n\n\n
            • Bazal d\u00fczlem \u00e7\u0131k\u0131klar\u0131<\/li>\n\n\n\n
            • \u0130stifleme hatalar\u0131<\/li>\n<\/ul>\n\n\n\n

              Geli\u015fmi\u015f \u00fcreticiler kusur yo\u011funlu\u011funu azaltmak i\u00e7in \u00e7e\u015fitli stratejiler uygulamaktad\u0131r:<\/p>\n\n\n\n

                \n
              • Y\u00fcksek kaliteli tohum kristali se\u00e7imi<\/li>\n\n\n\n
              • Optimize edilmi\u015f b\u00fcy\u00fcme oranlar\u0131<\/li>\n\n\n\n
              • Ger\u00e7ek zamanl\u0131 b\u00fcy\u00fcme takibi<\/li>\n<\/ul>\n\n\n\n

                Son yirmi y\u0131lda, kusur yo\u011funluklar\u0131 \u00f6nemli \u00f6l\u00e7\u00fcde azalt\u0131larak y\u00fcksek performansl\u0131 SiC cihazlar\u0131n\u0131n ticarile\u015ftirilmesi sa\u011flanm\u0131\u015ft\u0131r.<\/p>\n\n\n\n

                4. Wafer \u00c7ap\u0131 ve \u00d6l\u00e7eklendirme Standartlar\u0131<\/h3>\n\n\n\n

                Yar\u0131 iletken end\u00fcstrisi, \u00fcretim verimlili\u011fini art\u0131rmak i\u00e7in s\u00fcrekli olarak daha b\u00fcy\u00fck yonga plakas\u0131 boyutlar\u0131n\u0131 zorlamaktad\u0131r.<\/p>\n\n\n\n

                Mevcut end\u00fcstriyel standartlar \u015funlar\u0131 i\u00e7erir:<\/p>\n\n\n\n

                Gofret Boyutu<\/th>Tipik Uygulama<\/th><\/tr><\/thead>
                4 in\u00e7 (100 mm)<\/td>Ara\u015ft\u0131rma ve erken cihaz \u00fcretimi<\/td><\/tr>
                6 in\u00e7 (150 mm)<\/td>Ana ak\u0131m SiC cihaz \u00fcretimi<\/td><\/tr>
                8 in\u00e7 (200 mm)<\/td>Yeni nesil y\u00fcksek hacimli \u00fcretim<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

                8 in\u00e7lik yonga plakalar\u0131na \u00f6l\u00e7eklendirme, t\u00fcm alt tabaka boyunca e\u015fit kristal kalitesinin korunmas\u0131nda ek zorluklar ortaya \u00e7\u0131kar\u0131r.<\/p>\n\n\n\n

                5. Y\u00fczey \u0130\u015fleme ve Parlatma<\/h3>\n\n\n\n

                Kristal b\u00fcy\u00fcmesinden sonra SiC k\u00fcl\u00e7e birka\u00e7 i\u015flem a\u015famas\u0131ndan ge\u00e7er:<\/p>\n\n\n\n

                  \n
                1. Kristal oryantasyon \u00f6l\u00e7\u00fcm\u00fc<\/li>\n\n\n\n
                2. Tel testere ile dilimleme<\/li>\n\n\n\n
                3. Al\u0131\u015ft\u0131rma<\/li>\n\n\n\n
                4. Kimyasal-mekanik parlatma (CMP)<\/li>\n<\/ol>\n\n\n\n

                  Bu s\u00fcre\u00e7ler, nihai yonga plakas\u0131n\u0131n atomik d\u00fczeyde p\u00fcr\u00fczs\u00fczl\u00fck ve minimum y\u00fczey alt\u0131 hasar\u0131 dahil olmak \u00fczere kat\u0131 yar\u0131 iletken y\u00fczey standartlar\u0131n\u0131 kar\u015f\u0131lamas\u0131n\u0131 sa\u011flar.<\/p>\n\n\n\n

                  SiC Kristal \u00dcretiminde Gelecek Trendleri<\/h2>\n\n\n\n

                  Enerji tasarruflu elektronik cihazlara y\u00f6nelik k\u00fcresel talep artmaya devam ederken, SiC kristal \u00fcretimi birka\u00e7 \u00f6nemli y\u00f6nde geli\u015fmektedir.<\/p>\n\n\n\n

                  Daha B\u00fcy\u00fck Wafer \u00dcretimi<\/h3>\n\n\n\n

                  6 in\u00e7lik yonga plakalar\u0131ndan 8 in\u00e7lik yonga plakalar\u0131na ge\u00e7i\u015fin cihaz \u00fcretim maliyetlerini \u00f6nemli \u00f6l\u00e7\u00fcde azaltmas\u0131 bekleniyor.<\/p>\n\n\n\n

                  Geli\u015fmi\u015f B\u00fcy\u00fcme \u0130zleme<\/h3>\n\n\n\n

                  A\u015fa\u011f\u0131dakiler gibi yeni teknolojiler in-situ optik izleme<\/strong> ve Yapay zeka destekli f\u0131r\u0131n kontrol\u00fc<\/strong> b\u00fcy\u00fcme istikrar\u0131n\u0131 ve verimi art\u0131r\u0131yor.<\/p>\n\n\n\n

                  Kusursuz Kristal Geli\u015ftirme<\/h3>\n\n\n\n

                  Ara\u015ft\u0131rma \u00e7abalar\u0131, cihaz performans\u0131n\u0131 ve g\u00fcvenilirli\u011fini daha da art\u0131racak s\u0131f\u0131ra yak\u0131n kusurlu SiC alt tabakalar \u00fcretmeye odaklanm\u0131\u015ft\u0131r.<\/p>\n\n\n\n

                  Sonu\u00e7<\/h2>\n\n\n\n

                  Y\u00fcksek safl\u0131kta SiC kristal b\u00fcy\u00fctme, yar\u0131 iletken malzeme m\u00fchendisli\u011finde en zorlu s\u00fcre\u00e7lerden birini temsil eder. PVT, s\u0131k\u0131 hammadde safla\u015ft\u0131rma ve hassas termal kontrol gibi geli\u015fmi\u015f b\u00fcy\u00fctme teknikleri sayesinde \u00fcreticiler, yeni nesil g\u00fc\u00e7 elektroni\u011fi sa\u011flayan y\u00fcksek kaliteli SiC substratlar\u0131 \u00fcretebilmektedir.<\/p>\n\n\n\n

                  End\u00fcstriler elektrifikasyona ve daha y\u00fcksek enerji verimlili\u011fine do\u011fru ilerledik\u00e7e, SiC kristalleri i\u00e7in hassas \u00fcretim standartlar\u0131 da geli\u015fmeye devam edecektir. Yonga plakas\u0131 boyutu, hata kontrol\u00fc ve s\u00fcre\u00e7 otomasyonundaki geli\u015fmeler, SiC tabanl\u0131 cihazlar i\u00e7in geni\u015fleyen k\u00fcresel pazar\u0131n desteklenmesinde \u00f6nemli bir rol oynayacakt\u0131r.<\/p>","protected":false},"excerpt":{"rendered":"

                  Silicon Carbide has emerged as one of the most important wide-bandgap semiconductor materials in modern power electronics and high-temperature applications. Compared with conventional semiconductor materials such as Silicon, SiC offers superior electrical, thermal, and mechanical properties, enabling the development of high-efficiency devices for electric vehicles, renewable energy systems, and high-frequency power electronics. However, producing high-purity […]<\/p>\n","protected":false},"author":2,"featured_media":8735,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"_uag_custom_page_level_css":"","footnotes":""},"categories":[27,12],"tags":[1999,1998,2003,2000,1754,2002,1997,2001,1125],"class_list":["post-8734","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-companynews","category-news","tag-high-purity-sic","tag-pvt-crystal-growth","tag-sic-crystal-defects","tag-sic-semiconductor-substrates","tag-sic-wafer-manufacturing","tag-sic-wafer-production","tag-silicon-carbide-crystal-growth","tag-silicon-carbide-power-devices","tag-wide-bandgap-semiconductors"],"acf":[],"uagb_featured_image_src":{"full":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/03\/High-Purity-SiC-Crystal-Growth-Precision-Manufacturing-Standards-1.webp",712,281,false],"thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/03\/High-Purity-SiC-Crystal-Growth-Precision-Manufacturing-Standards-1-150x150.webp",150,150,true],"medium":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/03\/High-Purity-SiC-Crystal-Growth-Precision-Manufacturing-Standards-1-300x118.webp",300,118,true],"medium_large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/03\/High-Purity-SiC-Crystal-Growth-Precision-Manufacturing-Standards-1.webp",712,281,false],"large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/03\/High-Purity-SiC-Crystal-Growth-Precision-Manufacturing-Standards-1.webp",712,281,false],"1536x1536":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/03\/High-Purity-SiC-Crystal-Growth-Precision-Manufacturing-Standards-1.webp",712,281,false],"2048x2048":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/03\/High-Purity-SiC-Crystal-Growth-Precision-Manufacturing-Standards-1.webp",712,281,false],"trp-custom-language-flag":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/03\/High-Purity-SiC-Crystal-Growth-Precision-Manufacturing-Standards-1-18x7.webp",18,7,true],"woocommerce_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/03\/High-Purity-SiC-Crystal-Growth-Precision-Manufacturing-Standards-1-300x281.webp",300,281,true],"woocommerce_single":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/03\/High-Purity-SiC-Crystal-Growth-Precision-Manufacturing-Standards-1-600x237.webp",600,237,true],"woocommerce_gallery_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/03\/High-Purity-SiC-Crystal-Growth-Precision-Manufacturing-Standards-1-100x100.webp",100,100,true]},"uagb_author_info":{"display_name":"lydia","author_link":"https:\/\/www.sic-wafers.com\/tr\/author\/lydia\/"},"uagb_comment_info":0,"uagb_excerpt":"Silicon Carbide has emerged as one of the most important wide-bandgap semiconductor materials in modern power electronics and high-temperature applications. Compared with conventional semiconductor materials such as Silicon, SiC offers superior electrical, thermal, and mechanical properties, enabling the development of high-efficiency devices for electric vehicles, renewable energy systems, and high-frequency power electronics. However, producing high-purity…","_links":{"self":[{"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/posts\/8734","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/comments?post=8734"}],"version-history":[{"count":1,"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/posts\/8734\/revisions"}],"predecessor-version":[{"id":8736,"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/posts\/8734\/revisions\/8736"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/media\/8735"}],"wp:attachment":[{"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/media?parent=8734"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/categories?post=8734"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/tr\/wp-json\/wp\/v2\/tags?post=8734"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}