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Ultra-Durable High-Purity 4-Inch SiC Tray for Superior Semiconductor Processing Efficiency

    SiC Tray‘s Abstrat

    In the realm of semiconductor manufacturing, Silicon Carbide (SiC) trays play a pivotal role in facilitating the growth of high-quality epitaxial layers. SiC, known for its excellent thermal and mechanical properties, offers superior resistance to thermal shock and chemical corrosion compared to traditional silicon-based materials. This abstract explores the design, fabrication, and performance evaluation of SiC trays, highlighting their significance in epitaxial growth processes. Through a combination of advanced manufacturing techniques and material properties, SiC trays not only enhance the efficiency and yield of epitaxial growth but also contribute to the development of robust and reliable semiconductor devices for various applications.

    The role of SiC (Silicon Carbide) trays as a sustainable solution in high-temperature processing environments. With the escalating demand for energy-efficient and environmentally friendly manufacturing processes, SiC trays emerge as a promising alternative to conventional graphite or quartz trays due to their inherent thermal stability and resistance to chemical degradation. This study delves into the environmental impact and lifecycle assessment of SiC trays, elucidating their potential for reducing carbon footprint and waste generation in semiconductor fabrication facilities. Through comprehensive analyses and case studies, the abstract highlights the viability of SiC trays as a sustainable choice, contributing to the advancement of eco-conscious practices in the semiconductor industry.

    SiC Tray
    SiC Tray

    SiC Tray‘s properties

    Silicon Carbide (SiC) trays possess a range of properties that make them highly desirable for various industrial applications, particularly in semiconductor manufacturing. Some key properties include:

    1. High Thermal Conductivity: SiC trays exhibit excellent thermal conductivity, enabling efficient heat dissipation during high-temperature processes such as epitaxial growth or annealing. This property helps in maintaining uniform temperature distribution across the substrate, promoting consistent and precise manufacturing outcomes.
    2. Chemical Inertness: SiC is highly resistant to chemical corrosion and reactions with common semiconductor processing chemicals, acids, and alkalis. This inertness ensures the purity of the processed materials and extends the longevity of the trays in aggressive chemical environments.
    3. Mechanical Strength: SiC trays possess exceptional mechanical strength and rigidity, making them resistant to mechanical stresses and thermal shock. This property reduces the risk of deformation or breakage during handling and thermal cycling, thereby enhancing the durability and reliability of the trays.
    4. Low Thermal Expansion Coefficient: SiC exhibits a low coefficient of thermal expansion, which minimizes the risk of dimensional changes or warping at high temperatures. This property ensures dimensional stability and accuracy in semiconductor processing applications, maintaining tight tolerances and uniformity across substrates.
    5. High Temperature Resistance: SiC trays can withstand extreme temperatures, typically up to 2000°C or higher in inert atmospheres. This high temperature resistance allows for the processing of materials at elevated temperatures without compromising the integrity of the trays, making them suitable for a wide range of high-temperature applications.
    6. Electrical Insulation: SiC is an excellent electrical insulator, preventing electrical leakage and interference during semiconductor processing steps that involve electrical or plasma-based techniques. This property is essential for maintaining the integrity of electronic devices and preventing unwanted electrical interactions between components.
    7. Lightweight: SiC trays are relatively lightweight compared to alternative materials such as quartz or graphite, which facilitates handling and reduces the overall weight burden in manufacturing setups.
    8. Wide Bandgap: Silicon Carbide has a wide bandgap, typically around 3.0 to 3.3 electron volts (eV) depending on the crystal structure. This wide bandgap enables SiC trays to operate at higher temperatures and voltages compared to traditional semiconductor materials like silicon, making them suitable for high-power and high-frequency electronic applications.
    9. Optical Transparency: While not applicable to all SiC formulations, some varieties of SiC can exhibit optical transparency in certain spectral ranges, particularly in the ultraviolet (UV) region. This property can be advantageous for specific applications such as UV lithography or optical sensing where transparency to certain wavelengths is desired.
    10. Radiation Resistance: Silicon Carbide demonstrates resilience to ionizing radiation, including gamma rays and neutron radiation. This property makes SiC trays suitable for use in environments with radiation exposure, such as nuclear power plants or space applications, where conventional materials may degrade or fail under radiation exposure.
    11. Low Coefficient of Friction: Some SiC formulations exhibit a low coefficient of friction, which can be beneficial in applications where smooth sliding or movement is required, such as in semiconductor wafer transfer systems or mechanical handling equipment.
    12. Biocompatibility: Certain types of SiC, particularly in its ceramic form, have been found to be biocompatible, meaning they are well-tolerated by living tissues and cells. This property opens up potential applications for SiC trays in medical devices, implants, or biotechnology applications where biocompatibility is crucial.
    13. Environmental Stability: SiC trays are resistant to environmental degradation from factors such as moisture, humidity, and exposure to harsh weather conditions. This stability ensures consistent performance and longevity of SiC trays in various operating environments, including outdoor or industrial settings.

    Overall, the combination of these properties makes SiC trays an ideal choice for demanding semiconductor processing environments, offering superior performance, durability, and reliability.

    Silicon Carbide Properties

    Compound FormulaSiC
    Molecular Weight40.1
    AppearanceBlack
    Melting Point2,730° C (4,946° F) (decomposes)
    Density3.0 to 3.2 g/cm3
    Electrical Resistivity1 to 4 10x Ω-m
    Poisson’s Ratio0.15 to 0.21
    Specific Heat670 to 1180 J/kg-K

    Silicon Carbide Tray Specifications

     TypeRecrystallized SiCSintered SiCReaction Bonded SiC
    Purity of Silicon Carbide99.5%98%>88%
    Max. Working Temp. (`C)165015501300
    Bulk Density (g/cm3)2.73.1>3
    Appearance Porosity<15%2.50.1
    Flexural strength (MPa)110400380
    Compressive strength (MPa)>30022002100
    Thermal expansion (10^-6/`C)4.6 (1200`C)4.0 (<500`C)4.4 (<500`C)
    Thermal conductivity (W/m.K)35~3611065
    Main characteristicsHigh temp. High resistance.
    High purity
    Fracture ToughnessChemical Resistance

    SiC Tray‘s applications

    1. Semiconductor Manufacturing: SiC wafer trays are used for the handling and processing of silicon carbide wafers during various semiconductor fabrication processes, including epitaxial growth, ion implantation, and thermal processing.
    2. Wafer Inspection and Testing: These trays serve as carriers for silicon carbide wafers during inspection, testing, and metrology procedures in semiconductor manufacturing facilities.
    3. Wafer Transportation and Storage: SiC wafer trays provide a secure and stable platform for transporting and storing silicon carbide wafers within cleanroom environments, ensuring their protection from contamination and damage.
    4. Research and Development: In research laboratories and academic institutions, SiC wafer trays are used for experimental studies, materials characterization, and prototype development related to silicon carbide-based semiconductor devices and materials.
    5. LED Production: SiC wafer trays facilitate the fabrication of silicon carbide-based light-emitting diodes (LEDs) by providing a stable platform for the deposition and processing of semiconductor layers used in LED manufacturing.
    6. Power Electronics: These trays are utilized in the manufacturing of silicon carbide power semiconductor devices, such as Schottky diodes and MOSFETs, which are employed in high-power and high-frequency applications, including electric vehicles, renewable energy systems, and industrial power supplies.
    7. Solar Cell Manufacturing: SiC wafer trays are used in the production of silicon carbide-based solar cells, providing support for the deposition and processing of semiconductor materials used in solar cell fabrication.
    8. Optoelectronics: In optoelectronic device manufacturing, SiC wafer trays are employed for the production of photonic devices, such as silicon carbide-based photodetectors and optical sensors.
    9. Wafer Dicing and Packaging: These trays are used in the dicing and packaging processes of silicon carbide wafers, providing a stable platform for wafer handling and alignment during die singulation and assembly.
    10. MEMS (Microelectromechanical Systems) Fabrication: SiC wafer trays play a role in the fabrication of silicon carbide-based MEMS devices, providing support for the deposition, etching, and patterning of MEMS structures on silicon carbide substrates.
    11. Aerospace and Defense: SiC wafer trays find applications in aerospace and defense industries for the production of silicon carbide-based electronic components used in harsh environments, including high temperatures, radiation, and corrosive conditions.
    12. Automotive Electronics: These trays are utilized in the manufacturing of silicon carbide-based electronic components for automotive applications, including power electronics, sensors, and control systems, due to their high-temperature performance and reliability.
    13. Medical Devices: SiC wafer trays are used in the production of silicon carbide-based medical devices, such as implantable sensors and diagnostic tools, benefiting from the material’s biocompatibility and chemical stability.
    14. Optical Coating Deposition: In optics and photonics applications, SiC wafer trays provide support for the deposition of thin films and coatings on silicon carbide substrates, enabling the production of optical components with enhanced performance and durability.
    15. MEMS Sensors and Actuators: SiC wafer trays are employed in the fabrication of silicon carbide-based MEMS sensors and actuators used in automotive, aerospace, consumer electronics, and industrial applications, leveraging the material’s mechanical and thermal properties.

    These diverse applications demonstrate the versatility and importance of SiC wafer trays in various industries, ranging from semiconductor manufacturing to optoelectronics, aerospace, automotive, and medical device production.

    Overall, the unique combination of properties exhibited by SiC trays makes them indispensable components in a wide range of industrial processes and research endeavors, driving advancements in technology, energy efficiency, and materials innovation.w

    SiC Tray‘s advantages

    Silicon Carbide (SiC) trays offer numerous advantages across various industries and applications, making them highly preferred over alternative materials. Some of the key advantages of SiC trays include:

    1. High Temperature Resistance: SiC trays can withstand extreme temperatures, typically up to 2000°C or higher in inert atmospheres. This high temperature resistance enables their use in demanding thermal processing applications without compromising structural integrity or performance.
    2. Excellent Thermal Conductivity: SiC exhibits high thermal conductivity, allowing for efficient heat transfer and uniform temperature distribution during heating and cooling processes. This property is particularly beneficial in semiconductor manufacturing, where precise temperature control is essential for device performance and yield.
    3. Chemical Inertness: SiC trays are highly resistant to chemical corrosion and reactions with acids, alkalis, and other process chemicals. This chemical inertness ensures the purity of processed materials and extends the lifespan of trays in aggressive chemical environments, reducing maintenance and replacement costs.
    4. Mechanical Strength and Durability: SiC trays possess exceptional mechanical strength and rigidity, making them resistant to mechanical stresses, thermal shock, and deformation. This durability ensures reliable performance and longevity in industrial applications, minimizing downtime and production interruptions.
    5. Dimensional Stability: SiC has a low coefficient of thermal expansion, which means SiC trays maintain dimensional stability and integrity across a wide range of temperatures. This property ensures consistent product quality and tight tolerances in manufacturing processes, contributing to higher yields and lower scrap rates.
    6. Electrical Insulation: SiC is an excellent electrical insulator, preventing electrical leakage and interference in electronic and semiconductor applications. This property is critical for maintaining device performance and reliability, particularly in high-voltage or high-frequency circuits.
    7. Lightweight: SiC trays are relatively lightweight compared to alternative materials such as quartz or graphite, making them easier to handle and transport. This lightweight design reduces the risk of operator fatigue and simplifies integration into manufacturing systems.
    8. Environmental Sustainability: SiC is a sustainable material with a long lifespan and minimal environmental impact. Its resistance to degradation from moisture, chemicals, and harsh environmental conditions reduces the need for frequent replacement and disposal, contributing to resource conservation and waste reduction.
    9. Versatility: SiC trays are versatile and adaptable to a wide range of applications across industries, including semiconductor manufacturing, solar cell production, LED fabrication, power electronics, aerospace, and research. Their compatibility with diverse processing environments and requirements makes them an ideal choice for various industrial and scientific applications.

    Overall, the combination of these advantages makes SiC trays an indispensable component in critical manufacturing processes, enabling higher efficiency, reliability, and performance in a variety of applications.

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    Q&A

    What is SiC tray?

    A SiC (Silicon Carbide) tray is a specialized component used in semiconductor manufacturing and various industrial processes. It serves as a platform or carrier for supporting and handling silicon carbide wafers or substrates during different stages of fabrication, testing, transportation, and storage.

    SiC trays are typically made from silicon carbide material due to its exceptional thermal stability, mechanical strength, chemical inertness, and resistance to high temperatures. These trays are designed to withstand the harsh conditions encountered in semiconductor processing environments, such as high-temperature annealing, chemical vapor deposition (CVD), and thermal oxidation.

    The primary purpose of SiC trays is to provide a stable and contamination-free environment for silicon carbide wafers, ensuring their protection from damage, contamination, and handling errors. SiC trays play a critical role in maintaining the integrity and quality of silicon carbide-based semiconductor devices and materials throughout the manufacturing process.

    SiC trays come in various sizes and configurations to accommodate different wafer sizes, process requirements, and equipment compatibility. They are essential components in semiconductor fabrication facilities (cleanrooms) and other industries where silicon carbide materials are used for advanced electronic, optoelectronic, and MEMS (Microelectromechanical Systems) applications.

    What is the usage of SiC tray?

    The usage of SiC (Silicon Carbide) trays encompasses a wide range of applications across various industries, primarily in semiconductor manufacturing and related processes. Some specific uses of SiC trays include:

    1. Wafer Handling and Processing: SiC trays are used to support and transport silicon carbide wafers during different stages of semiconductor fabrication processes, including epitaxial growth, ion implantation, thermal processing, and chemical vapor deposition (CVD).
    2. Wafer Inspection and Testing: These trays provide a stable platform for holding silicon carbide wafers during inspection, testing, and metrology procedures to ensure product quality and performance.
    3. Wafer Transportation and Storage: SiC trays are utilized for transporting and storing silicon carbide wafers within cleanroom environments, safeguarding them from contamination, damage, and handling errors during storage and transportation.
    4. Research and Development: SiC trays are employed in research laboratories and academic institutions for experimental studies, materials characterization, and prototype development related to silicon carbide-based semiconductor devices and materials.
    5. LED Production: SiC trays facilitate the fabrication of silicon carbide-based light-emitting diodes (LEDs) by providing a stable platform for the deposition and processing of semiconductor layers used in LED manufacturing.
    6. Power Electronics: These trays are essential in the manufacturing of silicon carbide power semiconductor devices, such as Schottky diodes and MOSFETs, which are used in high-power and high-frequency applications like electric vehicles and renewable energy systems.
    7. Solar Cell Manufacturing: SiC trays support the production of silicon carbide-based solar cells by providing a stable platform for the deposition and processing of semiconductor materials used in solar cell fabrication.
    8. Optoelectronics: SiC trays are used in the production of photonic devices, such as silicon carbide-based photodetectors and optical sensors, for applications in telecommunications, imaging, and sensing.
    9. MEMS (Microelectromechanical Systems) Fabrication: SiC trays play a role in the fabrication of silicon carbide-based MEMS devices, providing support for the deposition, etching, and patterning of MEMS structures on silicon carbide substrates.

    These applications demonstrate the versatility and importance of SiC trays in various industries, ranging from semiconductor manufacturing to optoelectronics, renewable energy, and beyond. SiC trays contribute to the efficient production of high-performance semiconductor devices and advanced materials, driving innovation and progress in technology.

    Our service

    In the first stage, we specialize in providing customized services, meticulously crafting products according to the precise specifications and preferences outlined by our customers.

    Once the design phase is complete, we move seamlessly into the production process. Leveraging state-of-the-art facilities and cutting-edge technologies, we manufacture high-quality products with precision and efficiency.

    Quality is paramount in everything we do. Therefore, our third stage involves rigorous quality testing and inspection procedures to guarantee that each product meets the highest industry standards and exceeds customer expectations.

    Following production and quality assurance, we take care of logistics and transportation arrangements. We ensure that products are delivered promptly and securely to their designated destinations, utilizing efficient and reliable transportation networks.

    Finally, our commitment to customer satisfaction extends beyond the point of sale. In our fifth stage, we offer comprehensive after-sales services. If at any point our clients are dissatisfied with our products or services, we are dedicated to addressing their concerns promptly and offering solutions, including the option for product remanufacturing if necessary.

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