{"id":6494,"date":"2024-04-18T21:10:19","date_gmt":"2024-04-18T13:10:19","guid":{"rendered":"https:\/\/www.sic-wafers.com\/?p=6494"},"modified":"2024-04-18T21:10:22","modified_gmt":"2024-04-18T13:10:22","slug":"silicon-carbide-wafers-have-both-c-face-and-si","status":"publish","type":"post","link":"https:\/\/www.sic-wafers.com\/vi\/silicon-carbide-wafers-have-both-c-face-and-si\/","title":{"rendered":"Do ph\u01b0\u01a1ng ph\u00e1p nu\u00f4i c\u1ea5y, c\u00e1c t\u1ea5m wafer cacbua silic c\u00f3 c\u1ea3 hai h\u01b0\u1edbng m\u1eb7t C v\u00e0 m\u1eb7t Si."},"content":{"rendered":"
<\/div>\n


Silicon carbide wafers(SiC)<\/a> is a binary compound formed by silicon (Si) and carbon (C) in a 1:1 ratio, with its basic structural unit being the Si-C tetrahedron.<\/h4>\n\n\n\n
\"sic<\/a><\/figure>\n\n\n\n

Take an example: Si atoms have a larger diameter, equivalent to apples, while C atoms have a smaller diameter, equivalent to oranges. When an equal number of oranges and apples are stacked together, it forms a Silicon carbide<\/a>crystal.<\/p>\n\n\n\n

Silicon carbide<\/a> is a binary compound, where the Si-Si bond atomic distance is 3.89 \u00c5. How to understand this distance? Currently, the most advanced lithography machines on the market have a lithographic precision of 3 nm, which is equivalent to a distance of 30 \u00c5. The lithographic precision is eight times the atomic distance.<\/p>\n\n\n\n

The Si-Si bond energy is 310 kJ\/mol, which can be understood as the force required to pull these two atoms apart. The greater the bond energy, the greater the force required to separate them.<\/p>\n\n\n\n

The Si-C bond atomic distance is 1.89 \u00c5, and the bond energy is 447 kJ\/mol.<\/p>\n\n\n\n

From the bond energy, it can be seen that compared to traditional silicon-based semiconductor materials, silicon carbide-based semiconductor materials have more stable chemical properties.<\/p>\n\n\n\n

From the diagram, it can be observed that any C atom is connected to the nearest four Si atoms, and vice versa, any Si atom is connected to the nearest four C atoms.<\/p>\n\n\n\n

\"\"<\/a><\/figure>\n\n\n\n

The crystal structure of Silicon carbide<\/a> can also be described using a layered structure method, as shown in the diagram. In the crystal, several C atoms occupy hexagonal lattice sites in the same plane, forming a layer of densely packed C atoms, while Si atoms also occupy hexagonal lattice sites in the same plane, forming a layer of densely packed Si atoms.<\/p>\n\n\n\n

Each C atom in the densely packed layer is connected to the nearest Si atom, and vice versa, the same applies to the densely packed layer of Si atoms. Every two adjacent C and Si atom densely packed layers constitute a carbon-silicon bilayer.<\/p>\n\n\n\n

The arrangement of SiC crystals is extremely diverse, with over 200 different crystal types discovered so far. This is similar to a Tetris game, where although the smallest unit blocks are the same, when combined, they form different shapes.<\/p>\n\n\n\n

The spatial structure of SiC is slightly more complex than Tetris; its smallest unit changes from a small square to a small tetrahedron composed of C and Si atoms.<\/p>\n\n\n\n

To distinguish between different crystal types of SiC, the Ramsdell method is primarily used for labeling. This method combines letters and numbers to represent the different crystal types of SiC.<\/p>\n\n\n\n

The letter is placed at the end to indicate the crystal’s cell type: C represents cubic crystal structure, H represents hexagonal crystal structure, and R represents rhombic crystal structure. The number is placed at the beginning to indicate the number of layers of the basic repeating unit of the Si-C bilayer.<\/p>\n\n\n\n

Except for 2H-SiC and 3C-SiC, all other crystal types can be considered as a mixture of wurtzite and zinc blende structures, which are densely packed hexagonal structures.<\/p>\n\n\n\n

\"Silicon<\/figure>\n\n\n\n

The C-face refers to the (000-1) crystal plane of silicon carbide wafers, which is the surface cut along the negative direction of the c-axis of the crystal. The terminating atoms on this surface are carbon atoms.<\/p>\n\n\n\n

The Si-face refers to the (0001) crystal plane of silicon carbide wafers, which is the surface cut along the positive direction of the c-axis of the crystal. The terminating atoms on this surface are silicon atoms.<\/p>\n\n\n\n

The differences between the C-face and Si-face will affect the physical and electrical properties of silicon carbide wafers, such as thermal conductivity, electrical conductivity, carrier mobility, interface density, etc.<\/p>\n\n\n\n

The selection of C-face or Si-face also influences the manufacturing processes and performance of silicon carbide devices, such as epitaxial growth, ion implantation, oxidation, metal deposition, contact resistance, etc.<\/p>","protected":false},"excerpt":{"rendered":"

Silicon carbide wafers(SiC) is a binary compound formed by silicon (Si) and carbon (C) in a 1:1 ratio, with its basic structural unit being the Si-C tetrahedron. Take an example: Si atoms have a larger diameter, equivalent to apples, while C atoms have a smaller diameter, equivalent to oranges. When an equal number of oranges […]<\/p>\n","protected":false},"author":2,"featured_media":6495,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"_uag_custom_page_level_css":"","footnotes":""},"categories":[12,28],"tags":[],"class_list":["post-6494","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-news","category-tips"],"acf":[],"uagb_featured_image_src":{"full":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/04\/sic-structure.webp",510,266,false],"thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/04\/sic-structure-150x150.png",150,150,true],"medium":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/04\/sic-structure-300x156.png",300,156,true],"medium_large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/04\/sic-structure.webp",510,266,false],"large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/04\/sic-structure.webp",510,266,false],"1536x1536":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/04\/sic-structure.webp",510,266,false],"2048x2048":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/04\/sic-structure.webp",510,266,false],"trp-custom-language-flag":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/04\/sic-structure.webp",18,9,false],"woocommerce_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/04\/sic-structure-300x266.webp",300,266,true],"woocommerce_single":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/04\/sic-structure.webp",510,266,false],"woocommerce_gallery_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2024\/04\/sic-structure-100x100.webp",100,100,true]},"uagb_author_info":{"display_name":"lydia","author_link":"https:\/\/www.sic-wafers.com\/vi\/author\/lydia\/"},"uagb_comment_info":0,"uagb_excerpt":"Silicon carbide wafers(SiC) is a binary compound formed by silicon (Si) and carbon (C) in a 1:1 ratio, with its basic structural unit being the Si-C tetrahedron. Take an example: Si atoms have a larger diameter, equivalent to apples, while C atoms have a smaller diameter, equivalent to oranges. When an equal number of oranges…","_links":{"self":[{"href":"https:\/\/www.sic-wafers.com\/vi\/wp-json\/wp\/v2\/posts\/6494","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.sic-wafers.com\/vi\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.sic-wafers.com\/vi\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/vi\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/vi\/wp-json\/wp\/v2\/comments?post=6494"}],"version-history":[{"count":2,"href":"https:\/\/www.sic-wafers.com\/vi\/wp-json\/wp\/v2\/posts\/6494\/revisions"}],"predecessor-version":[{"id":6499,"href":"https:\/\/www.sic-wafers.com\/vi\/wp-json\/wp\/v2\/posts\/6494\/revisions\/6499"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/vi\/wp-json\/wp\/v2\/media\/6495"}],"wp:attachment":[{"href":"https:\/\/www.sic-wafers.com\/vi\/wp-json\/wp\/v2\/media?parent=6494"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/vi\/wp-json\/wp\/v2\/categories?post=6494"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/vi\/wp-json\/wp\/v2\/tags?post=6494"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}