{"id":8802,"date":"2026-04-02T13:23:00","date_gmt":"2026-04-02T05:23:00","guid":{"rendered":"https:\/\/www.sic-wafers.com\/?p=8802"},"modified":"2026-04-09T10:01:43","modified_gmt":"2026-04-09T02:01:43","slug":"detailed-overview-of-silicon-carbide-sic-power-device-fabrication","status":"publish","type":"post","link":"https:\/\/www.sic-wafers.com\/vi\/detailed-overview-of-silicon-carbide-sic-power-device-fabrication\/","title":{"rendered":"T\u1ed5ng quan chi ti\u1ebft v\u1ec1 quy tr\u00ecnh s\u1ea3n xu\u1ea5t thi\u1ebft b\u1ecb \u0111i\u1ec7n t\u1eed b\u1eb1ng cacbua silic (SiC)"},"content":{"rendered":"
<\/div>\n

Cacbua silic (SiC) \u0111\u00e3 tr\u1edf th\u00e0nh v\u1eadt li\u1ec7u quan tr\u1ecdng trong c\u00e1c thi\u1ebft b\u1ecb b\u00e1n d\u1eabn c\u00f4ng su\u1ea5t hi\u1ec7u su\u1ea5t cao nh\u1edd kho\u1ea3ng c\u00e1ch d\u1ea3i n\u0103ng l\u01b0\u1ee3ng r\u1ed9ng, \u0111\u1ed9 d\u1eabn nhi\u1ec7t cao, \u0111i\u1ec7n tr\u01b0\u1eddng ph\u00e1 v\u1ee1 cao v\u00e0 t\u1ed1c \u0111\u1ed9 tr\u00f4i \u0111i\u1ec7n t\u1eed cao. Nh\u1eefng \u0111\u1eb7c t\u00ednh n\u00e0y khi\u1ebfn c\u00e1c thi\u1ebft b\u1ecb c\u00f4ng su\u1ea5t SiC tr\u1edf n\u00ean l\u00fd t\u01b0\u1edfng cho xe \u0111i\u1ec7n, h\u1ec7 th\u1ed1ng l\u01b0u tr\u1eef n\u0103ng l\u01b0\u1ee3ng v\u00e0 b\u1ed9 bi\u1ebfn t\u1ea7n n\u0103ng l\u01b0\u1ee3ng t\u00e1i t\u1ea1o, mang l\u1ea1i t\u1ed5n th\u1ea5t d\u1eabn \u0111i\u1ec7n th\u1ea5p h\u01a1n v\u00e0 hi\u1ec7u su\u1ea5t cao h\u01a1n so v\u1edbi c\u00e1c thi\u1ebft b\u1ecb silicon truy\u1ec1n th\u1ed1ng. B\u00e0i vi\u1ebft n\u00e0y cung c\u1ea5p m\u1ed9t c\u00e1i nh\u00ecn t\u1ed5ng quan k\u1ef9 thu\u1eadt chi ti\u1ebft v\u1ec1 quy tr\u00ecnh ch\u1ebf t\u1ea1o thi\u1ebft b\u1ecb \u0111i\u1ec7n SiC, t\u1eadp trung v\u00e0o c\u00e1c ch\u1ee7 \u0111\u1ec1 nh\u01b0 ch\u1ea5t n\u1ec1n, qu\u00e1 tr\u00ecnh ph\u00e1t tri\u1ec3n l\u1edbp ph\u1ee7, ki\u1ec3m so\u00e1t pha t\u1ea1p, qu\u1ea3n l\u00fd khuy\u1ebft t\u1eadt v\u00e0 c\u00e1c xu h\u01b0\u1edbng hi\u1ec7n t\u1ea1i trong ng\u00e0nh.<\/p>\n\n\n\n

\"\"<\/figure>\n\n\n\n

1. V\u1eadt li\u1ec7u l\u00f5i: Ch\u1ea5t n\u1ec1n tinh th\u1ec3 \u0111\u01a1n 4H-SiC<\/a><\/h2>\n\n\n\n

4H-SiC l\u00e0 d\u1ea1ng tinh th\u1ec3 \u0111\u01b0\u1ee3c s\u1eed d\u1ee5ng ph\u1ed5 bi\u1ebfn nh\u1ea5t trong s\u1ea3n xu\u1ea5t thi\u1ebft b\u1ecb \u0111i\u1ec7n. K\u00fd hi\u1ec7u \u201c4H\u201d ch\u1ec9 tr\u00ecnh t\u1ef1 x\u1ebfp ch\u1ed3ng d\u1ecdc theo tr\u1ee5c c, trong \u0111\u00f3 b\u1ed1n l\u1edbp k\u00e9p Si-C t\u1ea1o th\u00e0nh m\u1ed9t \u00f4 \u0111\u01a1n v\u1ecb l\u1ee5c gi\u00e1c (tr\u00ecnh t\u1ef1 x\u1ebfp ch\u1ed3ng ABCB). C\u00e1c \u01b0u \u0111i\u1ec3m ch\u00ednh c\u1ee7a v\u1eadt li\u1ec7u n\u00e0y bao g\u1ed3m:<\/p>\n\n\n\n

T\u00e0i s\u1ea3n<\/th>Gi\u00e1 tr\u1ecb<\/th>\u00dd ngh\u0129a<\/th><\/tr><\/thead>
Kho\u1ea3ng c\u00e1ch n\u0103ng l\u01b0\u1ee3ng<\/td>~3,3 eV<\/td>Ho\u1ea1t \u0111\u1ed9ng \u1edf nhi\u1ec7t \u0111\u1ed9 cao<\/td><\/tr>
Tr\u01b0\u1eddng Ph\u00e2n t\u00edch Chi ti\u1ebft<\/td>2\u20133 mV\/cm<\/td>Kh\u1ea3 n\u0103ng ch\u1ecbu \u0111i\u1ec7n \u00e1p cao<\/td><\/tr>
\u0110\u1ed9 d\u1eabn nhi\u1ec7t<\/td>~4,9 W\/cm\u00b7K<\/td>T\u1ea3n nhi\u1ec7t hi\u1ec7u qu\u1ea3<\/td><\/tr>
T\u1ed1c \u0111\u1ed9 tr\u00f4i c\u1ee7a electron<\/td>~2 \u00d7 10\u2077 cm\/s<\/td>Th\u00edch h\u1ee3p cho ho\u1ea1t \u0111\u1ed9ng \u1edf t\u1ea7n s\u1ed1 cao<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

Nh\u1eefng \u0111\u1eb7c t\u00ednh n\u00e0y khi\u1ebfn 4H-SiC tr\u1edf th\u00e0nh v\u1eadt li\u1ec7u l\u00fd t\u01b0\u1edfng \u0111\u1ec3 s\u1ea3n xu\u1ea5t c\u00e1c thi\u1ebft b\u1ecb ho\u1ea1t \u0111\u1ed9ng \u1edf \u0111i\u1ec1u ki\u1ec7n \u0111i\u1ec7n \u00e1p cao, d\u00f2ng \u0111i\u1ec7n l\u1edbn, nhi\u1ec7t \u0111\u1ed9 cao v\u00e0 t\u1ea7n s\u1ed1 cao.<\/p>\n\n\n\n

2. H\u01b0\u1edbng c\u1ee7a ch\u1ea5t n\u1ec1n v\u00e0 thi\u1ebft k\u1ebf l\u1ec7ch tr\u1ee5c<\/h2>\n\n\n\n

C\u00e1c m\u1eb7t tinh th\u1ec3 SiC {0001} c\u00f3 th\u1ec3 \u0111\u01b0\u1ee3c ph\u00e2n lo\u1ea1i th\u00e0nh:<\/p>\n\n\n\n

    \n
  • Si-face (0001)<\/strong>: C\u00e1c nguy\u00ean t\u1eed \u1edf l\u1edbp tr\u00ean c\u00f9ng l\u00e0 silic. C\u00e1c t\u00ednh ch\u1ea5t b\u1ec1 m\u1eb7t t\u1ea1o \u0111i\u1ec1u ki\u1ec7n thu\u1eadn l\u1ee3i cho qu\u00e1 tr\u00ecnh ph\u00e1t tri\u1ec3n epitactic c\u00f3 ki\u1ec3m so\u00e1t v\u00e0 m\u1eadt \u0111\u1ed9 khuy\u1ebft t\u1eadt th\u1ea5p.<\/li>\n\n\n\n
  • C-face (000-1)<\/strong>: C\u00e1c nguy\u00ean t\u1eed \u1edf l\u1edbp ngo\u00e0i c\u00f9ng l\u00e0 carbon. Ho\u1ea1t t\u00ednh h\u00f3a h\u1ecdc cao d\u1eabn \u0111\u1ebfn t\u1ed1c \u0111\u1ed9 ph\u00e1t tri\u1ec3n nhanh h\u01a1n nh\u01b0ng c\u0169ng l\u00e0m gia t\u0103ng s\u1ef1 h\u00ecnh th\u00e0nh khuy\u1ebft t\u1eadt v\u00e0 g\u00e2y kh\u00f3 kh\u0103n h\u01a1n trong vi\u1ec7c ki\u1ec3m so\u00e1t qu\u00e1 tr\u00ecnh pha t\u1ea1p.<\/li>\n<\/ul>\n\n\n\n

    C\u00e1c thi\u1ebft b\u1ecb \u0111i\u1ec7n t\u1eed th\u01b0\u01a1ng m\u1ea1i h\u1ea7u nh\u01b0 ch\u1ec9 s\u1eed d\u1ee5ng c\u00e1c ch\u1ea5t n\u1ec1n Si-face l\u1ec7ch tr\u1ee5c, th\u01b0\u1eddng nghi\u00eang 3,5\u00b0\u20134\u00b0 theo h\u01b0\u1edbng . \u0110i\u1ec1u n\u00e0y t\u1ea1o ra c\u00e1c b\u1eadc thang nguy\u00ean t\u1eed h\u1ed7 tr\u1ee3 qu\u00e1 tr\u00ecnh ph\u00e1t tri\u1ec3n theo b\u1eadc thang, \u1ee9c ch\u1ebf s\u1ef1 h\u00ecnh th\u00e0nh nh\u00e2n hai chi\u1ec1u, gi\u1ea3m thi\u1ec3u khuy\u1ebft t\u1eadt v\u00e0 t\u1ea1o ra c\u00e1c l\u1edbp epitaksi ph\u1eb3ng \u1edf c\u1ea5p \u0111\u1ed9 nguy\u00ean t\u1eed.<\/p>\n\n\n\n

    3. Quy tr\u00ecnh ph\u00e1t tri\u1ec3n l\u1edbp ph\u1ee7 SiC<\/h2>\n\n\n\n

    S\u1ef1 ph\u00e1t tri\u1ec3n epitaxial l\u00e0 qu\u00e1 tr\u00ecnh l\u1eafng \u0111\u1ecdng m\u1ed9t l\u1edbp SiC \u0111\u01a1n tinh th\u1ec3 l\u00ean m\u1ed9t ch\u1ea5t n\u1ec1n \u0111\u01a1n tinh th\u1ec3, \u0111\u1ed3ng th\u1eddi duy tr\u00ec c\u1ea5u tr\u00fac tinh th\u1ec3 gi\u1ed1ng h\u1ec7t nhau. Qu\u00e1 tr\u00ecnh n\u00e0y t\u1ea1o th\u00e0nh c\u00e1c v\u00f9ng ho\u1ea1t \u0111\u1ed9ng c\u1ee7a c\u00e1c thi\u1ebft b\u1ecb nh\u01b0 l\u1edbp tr\u00f4i c\u1ee7a MOSFET v\u00e0 l\u1edbp P+. Ph\u01b0\u01a1ng ph\u00e1p ti\u00eau chu\u1ea9n l\u00e0 Ph\u01b0\u01a1ng ph\u00e1p l\u1eafng \u0111\u1ecdng h\u01a1i h\u00f3a h\u1ecdc (CVD)<\/strong>.<\/p>\n\n\n\n

    3.1 Chu\u1ea9n b\u1ecb ch\u1ea5t n\u1ec1n<\/h3>\n\n\n\n
    B\u01b0\u1edbc<\/th>M\u1ee5c \u0111\u00edch<\/th>C\u00e1c th\u00f4ng s\u1ed1 ti\u00eau bi\u1ec3u<\/th><\/tr><\/thead>
    Kh\u1eafc b\u1eb1ng hydro<\/td>Lo\u1ea1i b\u1ecf v\u1ebft x\u01b0\u1edbc, l\u1edbp oxit t\u1ef1 nhi\u00ean, t\u1ea1p ch\u1ea5t v\u00e0 c\u00e1c b\u1eadc nguy\u00ean t\u1eed<\/td>1500\u20131650\u00b0C, v\u00e0i ph\u00fat<\/td><\/tr>
    V\u1ec7 sinh<\/td>Lo\u1ea1i b\u1ecf c\u00e1c h\u1ea1t v\u00e0 ion kim lo\u1ea1i<\/td>RCA s\u1ea1ch (SC1, SC2, DHF)<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

    3.2 C\u00e1c th\u00f4ng s\u1ed1 t\u0103ng tr\u01b0\u1edfng epitactic<\/h3>\n\n\n\n
    Tham s\u1ed1<\/th>Ph\u1ea1m vi \u0111i\u1ec3n h\u00ecnh<\/th>Ghi ch\u00fa<\/th><\/tr><\/thead>
    Nhi\u1ec7t \u0111\u1ed9<\/td>1.500\u20131.650\u00b0C<\/td>Nhi\u1ec7t \u0111\u1ed9 cao th\u00fac \u0111\u1ea9y qu\u00e1 tr\u00ecnh ph\u00e2n h\u1ee7y ti\u1ec1n ch\u1ea5t v\u00e0 s\u1ef1 khu\u1ebfch t\u00e1n nguy\u00ean t\u1eed tr\u00ean b\u1ec1 m\u1eb7t<\/td><\/tr>
    \u00c1p l\u1ef1c<\/td>100\u2013300 mbar<\/td>\u00c1p su\u1ea5t th\u1ea5p gi\u00fap c\u1ea3i thi\u1ec7n \u0111\u1ed9 \u0111\u1ed3ng \u0111\u1ec1u v\u1ec1 \u0111\u1ed9 d\u00e0y v\u00e0 gi\u1ea3m s\u1ef1 h\u00ecnh th\u00e0nh c\u00e1c h\u1ea1t<\/td><\/tr>
    Ngu\u1ed3n silicon<\/td>SiH\u2084 ho\u1eb7c SiH\u2082Cl\u2082<\/td>SiH\u2082Cl\u2082 \u0111\u01b0\u1ee3c \u01b0u ti\u00ean s\u1eed d\u1ee5ng \u0111\u1ec3 \u1ee9c ch\u1ebf d\u1ea1ng \u0111a h\u00ecnh 3C-SiC v\u00e0 c\u00e1c khuy\u1ebft t\u1eadt h\u00ecnh tam gi\u00e1c<\/td><\/tr>
    Ngu\u1ed3n carbon<\/td>C\u2083H\u2088 (Propan) ho\u1eb7c C\u2082H\u2084 (Ethylene)<\/td>Propan l\u00e0 lo\u1ea1i ph\u1ed5 bi\u1ebfn nh\u1ea5t; ethylene \u0111\u01b0\u1ee3c s\u1eed d\u1ee5ng cho vi\u1ec7c tr\u1ed3ng tr\u1ecdt \u1edf nhi\u1ec7t \u0111\u1ed9 th\u1ea5p ho\u1eb7c \u0111\u1ec3 t\u0103ng \u0111\u1ed9 \u0111\u1ed3ng \u0111\u1ec1u<\/td><\/tr>
    T\u1ef7 l\u1ec7 Si\/C<\/td>0,7\u20131,0<\/td>Ch\u1ee9a m\u1ed9t l\u01b0\u1ee3ng nh\u1ecf C \u0111\u1ec3 tr\u00e1nh s\u1ef1 h\u00ecnh th\u00e0nh c\u00e1c gi\u1ecdt Si v\u00e0 c\u00e1c t\u1ea1p ch\u1ea5t \u0111a h\u00ecnh<\/td><\/tr>
    Doping (lo\u1ea1i N)<\/td>N\u2082 ho\u1eb7c NH\u2083<\/td>NH\u2083 mang l\u1ea1i hi\u1ec7u su\u1ea5t cao h\u01a1n v\u00e0 c\u1ea7n \u00edt ti\u1ec1n ch\u1ea5t h\u01a1n<\/td><\/tr>
    Doping (lo\u1ea1i P)<\/td>TMA hay TEA<\/td>Hi\u1ec7u su\u1ea5t th\u1ea5p, c\u1ea7n ph\u1ea3i ki\u1ec3m so\u00e1t ch\u00ednh x\u00e1c \u0111\u1ec3 ng\u0103n ch\u1eb7n s\u1ef1 h\u00ecnh th\u00e0nh ph\u1ee9c h\u1ee3p Al-C<\/td><\/tr>
    T\u1ef7 l\u1ec7 t\u0103ng tr\u01b0\u1edfng<\/td>5\u201320 \u00b5m\/gi\u1edd<\/td>C\u00e2n b\u1eb1ng gi\u1eefa hi\u1ec7u qu\u1ea3 s\u1ea3n xu\u1ea5t v\u00e0 ki\u1ec3m so\u00e1t l\u1ed7i<\/td><\/tr>
    Ph\u01b0\u01a1ng ph\u00e1p nu\u00f4i c\u1ea5y theo t\u1eebng giai \u0111o\u1ea1n<\/td>\u0110\u1ea1t \u0111\u01b0\u1ee3c nh\u1edd s\u1eed d\u1ee5ng ch\u1ea5t n\u1ec1n l\u1ec7ch tr\u1ee5c v\u00e0 ki\u1ec3m so\u00e1t nhi\u1ec7t \u0111\u1ed9, \u00e1p su\u1ea5t, t\u1ef7 l\u1ec7 Si\/C<\/td>Ng\u0103n ch\u1eb7n qu\u00e1 tr\u00ecnh h\u00ecnh th\u00e0nh h\u1ea1t 2D, gi\u1ea3m thi\u1ec3u khuy\u1ebft t\u1eadt, \u0111\u1ea3m b\u1ea3o \u0111\u1ed9 ph\u1eb3ng nguy\u00ean t\u1eed<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

    Trong qu\u00e1 tr\u00ecnh ph\u00e1t tri\u1ec3n, c\u00e1c nguy\u00ean t\u1eed ti\u1ec1n ch\u1ea5t c\u00f3 xu h\u01b0\u1edbng t\u00edch t\u1ee5 \u01b0u ti\u00ean t\u1ea1i c\u00e1c m\u00e9p b\u1eadc thang, v\u00e0 c\u00e1c b\u1eadc thang lan r\u1ed9ng qua c\u00e1c b\u1eadc thang ngang, t\u1ea1o th\u00e0nh m\u1ed9t l\u1edbp epitactic m\u1ecbn m\u00e0ng, \u00edt khuy\u1ebft t\u1eadt.<\/p>\n\n\n\n

    3.3 L\u00e0m m\u00e1t v\u00e0 d\u1ee1 h\u00e0ng<\/h3>\n\n\n\n

    Sau qu\u00e1 tr\u00ecnh t\u0103ng tr\u01b0\u1edfng, c\u00e1c t\u1ea5m wafer \u0111\u01b0\u1ee3c l\u00e0m m\u00e1t trong m\u00f4i tr\u01b0\u1eddng kh\u00ed H\u2082 ho\u1eb7c kh\u00ed tr\u01a1 \u0111\u1ec3 ng\u0103n ng\u1eeba \u1ee9ng su\u1ea5t nhi\u1ec7t v\u00e0 hi\u1ec7n t\u01b0\u1ee3ng n\u1ee9t t\u1ea5m wafer. Ch\u1ec9 khi \u0111\u1ea1t \u0111\u1ebfn nhi\u1ec7t \u0111\u1ed9 an to\u00e0n, c\u00e1c t\u1ea5m wafer m\u1edbi \u0111\u01b0\u1ee3c l\u1ea5y ra kh\u1ecfi l\u00f2 ph\u1ea3n \u1ee9ng.<\/p>\n\n\n\n

    4. C\u00e1c lo\u1ea1i l\u1ed7i v\u00e0 th\u00e1ch th\u1ee9c<\/h2>\n\n\n\n

    Qu\u00e1 tr\u00ecnh ph\u00e1t tri\u1ec3n l\u1edbp ph\u1ee7 SiC ph\u1ea3i \u0111\u1ed1i m\u1eb7t v\u1edbi m\u1ed9t s\u1ed1 th\u00e1ch th\u1ee9c quan tr\u1ecdng trong vi\u1ec7c ki\u1ec3m so\u00e1t khuy\u1ebft t\u1eadt:<\/p>\n\n\n\n

    Lo\u1ea1i l\u1ed7i<\/th>Nguy\u00ean nh\u00e2n<\/th>\u1ea2nh h\u01b0\u1edfng \u0111\u1ebfn thi\u1ebft b\u1ecb<\/th><\/tr><\/thead>
    C\u00e1c khuy\u1ebft t\u1eadt h\u00ecnh tam gi\u00e1c<\/td>C\u00e1c h\u1ea1t v\u1eadt li\u1ec7u n\u1ec1n, v\u1ebft x\u01b0\u1edbc, t\u1ea1p ch\u1ea5t 3C-SiC<\/td>L\u00e0m gi\u1ea3m n\u0103ng su\u1ea5t v\u00e0 \u0111\u1ed9 tin c\u1eady<\/td><\/tr>
    C\u00e1c khuy\u1ebft t\u1eadt c\u1ee7a c\u1ee7 c\u00e0 r\u1ed1t<\/td>C\u00e1c t\u1ea1p ch\u1ea5t cacbon ho\u1eb7c khuy\u1ebft t\u1eadt n\u1ec1n<\/td>\u0110\u1ed9 nh\u00e1m b\u1ec1 m\u1eb7t, khuy\u1ebft t\u1eadt c\u1ee5c b\u1ed9<\/td><\/tr>
    S\u1ef1 xu\u1ea5t hi\u1ec7n c\u1ee7a polytype<\/td>H\u1ea1t 3C-SiC<\/td>L\u00e0m suy gi\u1ea3m t\u00ednh to\u00e0n v\u1eb9n c\u1ee7a tinh th\u1ec3 \u0111\u01a1n<\/td><\/tr>
    C\u00e1c khuy\u1ebft t\u1eadt di truy\u1ec1n t\u1eeb ch\u1ea5t n\u1ec1n<\/td>Dislocation m\u1eb7t n\u1ec1n (BPD), dislocation m\u00e9p ren (TED)<\/td>BPD c\u00f3 th\u1ec3 chuy\u1ec3n th\u00e0nh l\u1ed7i x\u1ebfp ch\u1ed3ng d\u01b0\u1edbi t\u00e1c \u0111\u1ed9ng c\u1ee7a t\u1eeb tr\u01b0\u1eddng m\u1ea1nh, l\u00e0m t\u0103ng \u0111i\u1ec7n tr\u1edf khi d\u1eabn \u0111i\u1ec7n<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

    Vi\u1ec7c t\u1ed1i \u01b0u h\u00f3a quy tr\u00ecnh ph\u00e1t tri\u1ec3n t\u1eebng b\u01b0\u1edbc v\u00e0 chu\u1ea9n b\u1ecb ch\u1ea5t n\u1ec1n c\u1ea9n th\u1eadn c\u00f3 th\u1ec3 ng\u0103n ch\u1eb7n m\u1ed9t ph\u1ea7n s\u1ef1 l\u00e2y lan c\u1ee7a BPD v\u00e0 gi\u1ea3m thi\u1ec3u t\u00e1c \u0111\u1ed9ng c\u1ee7a ch\u00fang.<\/p>\n\n\n\n

    5. Xu h\u01b0\u1edbng ng\u00e0nh<\/h2>\n\n\n\n
      \n
    1. K\u00edch th\u01b0\u1edbc t\u1ea5m wafer l\u1edbn h\u01a1n<\/strong>: Chuy\u1ec3n \u0111\u1ed5i t\u1eeb t\u1ea5m wafer 100 mm sang 150 mm v\u00e0 200 mm \u0111\u1ec3 n\u00e2ng cao hi\u1ec7u qu\u1ea3 s\u1eed d\u1ee5ng tinh th\u1ec3 \u0111\u01a1n.<\/li>\n\n\n\n
    2. Gi\u1ea3m t\u1ef7 l\u1ec7 l\u1ed7i<\/strong>: T\u1ed1i \u01b0u h\u00f3a nhi\u1ec7t \u0111\u1ed9, \u00e1p su\u1ea5t, t\u1ef7 l\u1ec7 Si\/C v\u00e0 l\u1ef1a ch\u1ecdn ti\u1ec1n ch\u1ea5t \u0111\u1ec3 gi\u1ea3m thi\u1ec3u c\u00e1c khuy\u1ebft t\u1eadt BPD v\u00e0 khuy\u1ebft t\u1eadt h\u00ecnh tam gi\u00e1c.<\/li>\n\n\n\n
    3. T\u0103ng c\u01b0\u1eddng c\u00f4ng t\u00e1c ki\u1ec3m so\u00e1t doping<\/strong>: \u0110\u1eb7c bi\u1ec7t l\u00e0 \u0111\u1ed1i v\u1edbi qu\u00e1 tr\u00ecnh pha t\u1ea1p lo\u1ea1i P nh\u1eb1m \u0111\u1ea3m b\u1ea3o t\u00ednh \u0111\u1ed3ng nh\u1ea5t v\u00e0 hi\u1ec7u qu\u1ea3.<\/li>\n\n\n\n
    4. T\u1ed1c \u0111\u1ed9 t\u0103ng tr\u01b0\u1edfng cao<\/strong>: Nghi\u00ean c\u1ee9u t\u1ed1c \u0111\u1ed9 t\u0103ng tr\u01b0\u1edfng tr\u00ean 30 \u00b5m\/h \u0111\u1ed3ng th\u1eddi \u0111\u1ea3m b\u1ea3o ch\u1ea5t l\u01b0\u1ee3ng b\u1eb1ng c\u00e1ch s\u1eed d\u1ee5ng c\u00e1c ti\u1ec1n ch\u1ea5t ti\u00ean ti\u1ebfn nh\u01b0 SiHCl\u2083 (TCS).<\/li>\n\n\n\n
    5. Gi\u00e1m s\u00e1t t\u1ea1i ch\u1ed7<\/strong>: Ph\u01b0\u01a1ng ph\u00e1p giao thoa laser, \u0111o nhi\u1ec7t \u0111\u1ed9 quang h\u1ecdc v\u00e0 \u0111o \u0111\u1ed9 l\u1ec7ch h\u00ecnh elip \u0111\u1ec3 theo d\u00f5i qu\u00e1 tr\u00ecnh ph\u00e1t tri\u1ec3n theo th\u1eddi gian th\u1ef1c.<\/li>\n\n\n\n
    6. C\u1ea5u tr\u00fac nhi\u1ec1u l\u1edbp<\/strong>: Qu\u00e1 tr\u00ecnh m\u1ecdc l\u1edbp tinh th\u1ec3 ch\u00ednh x\u00e1c c\u1ee7a c\u00e1c l\u1edbp N+\/N-\/P-well\/N+ cho c\u00e1c thi\u1ebft b\u1ecb ph\u1ee9c t\u1ea1p nh\u01b0 MOSFET v\u00e0 IGBT.<\/li>\n<\/ol>\n\n\n\n

      6. K\u1ebft lu\u1eadn<\/h2>\n\n\n\n

      Qu\u00e1 tr\u00ecnh ph\u00e1t tri\u1ec3n l\u1edbp ph\u1ee7 epitaxial SiC tr\u00ean c\u00e1c ch\u1ea5t n\u1ec1n 4H-SiC c\u00f3 m\u1eb7t Si l\u1ec7ch tr\u1ee5c t\u1ea1o n\u1ec1n t\u1ea3ng cho c\u00e1c thi\u1ebft b\u1ecb \u0111i\u1ec7n c\u00f4ng su\u1ea5t cao. Vi\u1ec7c l\u00e0m ch\u1ee7 h\u01b0\u1edbng ch\u1ea5t n\u1ec1n, thi\u1ebft k\u1ebf l\u1ec7ch tr\u1ee5c, qu\u00e1 tr\u00ecnh ph\u00e1t tri\u1ec3n theo t\u1eebng b\u01b0\u1edbc v\u00e0 ki\u1ec3m so\u00e1t ch\u00ednh x\u00e1c c\u00e1c th\u00f4ng s\u1ed1 CVD l\u00e0 y\u1ebfu t\u1ed1 thi\u1ebft y\u1ebfu \u0111\u1ec3 \u0111\u1ea1t \u0111\u01b0\u1ee3c c\u00e1c l\u1edbp ph\u1ee7 epitaxial c\u00f3 \u00edt khuy\u1ebft t\u1eadt, \u0111\u1ed3ng nh\u1ea5t v\u00e0 ch\u1ea5t l\u01b0\u1ee3ng cao. Nh\u1eefng ti\u1ebfn b\u1ed9 li\u00ean t\u1ee5c v\u1ec1 k\u00edch th\u01b0\u1edbc wafer, t\u1ed1c \u0111\u1ed9 ph\u00e1t tri\u1ec3n, ki\u1ec3m so\u00e1t khuy\u1ebft t\u1eadt v\u00e0 gi\u00e1m s\u00e1t t\u1ea1i ch\u1ed7 s\u1ebd ti\u1ebfp t\u1ee5c th\u00fac \u0111\u1ea9y c\u00e1c thi\u1ebft b\u1ecb SiC h\u01b0\u1edbng t\u1edbi hi\u1ec7u su\u1ea5t cao h\u01a1n, chi ph\u00ed th\u1ea5p h\u01a1n v\u00e0 \u1ee9ng d\u1ee5ng r\u1ed9ng r\u00e3i h\u01a1n trong l\u0129nh v\u1ef1c \u0111i\u1ec7n t\u1eed ti\u1ebft ki\u1ec7m n\u0103ng l\u01b0\u1ee3ng.<\/p>","protected":false},"excerpt":{"rendered":"

      Silicon carbide (SiC) has emerged as a critical material in high-performance power semiconductor devices due to its wide bandgap, high thermal conductivity, high breakdown field, and high electron drift velocity. These properties make SiC power devices ideal for electric vehicles, energy storage systems, and renewable energy inverters, offering lower conduction losses and higher efficiency compared […]<\/p>\n","protected":false},"author":2,"featured_media":8803,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"_uag_custom_page_level_css":"","footnotes":""},"categories":[12,27],"tags":[1166,2175,2173,2178,1305,1306,1819,1313,1240,1048,2185,2183,2184,1338,1781,2182,2181,1340,2177,1807,2176,2180,2170,2171,1056,1776,1111,2174,2172,2179],"class_list":["post-8802","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-news","category-companynews","tag-4h-sic","tag-atomic-steps","tag-c-face","tag-carrot-defects","tag-chemical-vapor-deposition","tag-cvd","tag-defect-control","tag-doping-control","tag-epitaxial-growth","tag-epitaxy","tag-high-performance-semiconductor","tag-high-temperature-growth","tag-igbt","tag-jbs-diode","tag-large-diameter-wafer-2","tag-layer-uniformity","tag-low-pressure-growth","tag-mosfet","tag-n-type-doping","tag-off-axis-substrate","tag-p-type-doping","tag-polytype-inclusion","tag-power-device","tag-si-face","tag-sic","tag-sic-power-device","tag-silicon-carbide","tag-step-flow-growth","tag-substrate-preparation","tag-triangular-defects"],"acf":[],"uagb_featured_image_src":{"full":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1.webp",600,600,false],"thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1-150x150.webp",150,150,true],"medium":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1-300x300.webp",300,300,true],"medium_large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1.webp",600,600,false],"large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1.webp",600,600,false],"1536x1536":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1.webp",600,600,false],"2048x2048":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1.webp",600,600,false],"trp-custom-language-flag":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1-12x12.webp",12,12,true],"woocommerce_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1-300x300.webp",300,300,true],"woocommerce_single":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1.webp",600,600,false],"woocommerce_gallery_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1-100x100.webp",100,100,true]},"uagb_author_info":{"display_name":"lydia","author_link":"https:\/\/www.sic-wafers.com\/vi\/author\/lydia\/"},"uagb_comment_info":0,"uagb_excerpt":"Silicon carbide (SiC) has emerged as a critical material in high-performance power semiconductor devices due to its wide bandgap, high thermal conductivity, high breakdown field, and high electron drift velocity. These properties make SiC power devices ideal for electric vehicles, energy storage systems, and renewable energy inverters, offering lower conduction losses and higher efficiency compared…","_links":{"self":[{"href":"https:\/\/www.sic-wafers.com\/vi\/wp-json\/wp\/v2\/posts\/8802","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.sic-wafers.com\/vi\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.sic-wafers.com\/vi\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/vi\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/vi\/wp-json\/wp\/v2\/comments?post=8802"}],"version-history":[{"count":1,"href":"https:\/\/www.sic-wafers.com\/vi\/wp-json\/wp\/v2\/posts\/8802\/revisions"}],"predecessor-version":[{"id":8804,"href":"https:\/\/www.sic-wafers.com\/vi\/wp-json\/wp\/v2\/posts\/8802\/revisions\/8804"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/vi\/wp-json\/wp\/v2\/media\/8803"}],"wp:attachment":[{"href":"https:\/\/www.sic-wafers.com\/vi\/wp-json\/wp\/v2\/media?parent=8802"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/vi\/wp-json\/wp\/v2\/categories?post=8802"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/vi\/wp-json\/wp\/v2\/tags?post=8802"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}