{"id":8802,"date":"2026-04-02T13:23:00","date_gmt":"2026-04-02T05:23:00","guid":{"rendered":"https:\/\/www.sic-wafers.com\/?p=8802"},"modified":"2026-04-09T10:01:43","modified_gmt":"2026-04-09T02:01:43","slug":"%e7%a2%b3%e5%8c%96%e7%9f%bd%e7%9f%bd%e5%8a%9f%e7%8e%87%e5%85%83%e4%bb%b6%e8%a3%bd%e9%80%a0%e8%a9%b3%e7%b4%b0%e6%a6%82%e8%bf%b0","status":"publish","type":"post","link":"https:\/\/www.sic-wafers.com\/zh\/detailed-overview-of-silicon-carbide-sic-power-device-fabrication\/","title":{"rendered":"\u78b3\u5316\u77fd (SiC) \u529f\u7387\u5143\u4ef6\u88fd\u9020\u8a73\u7d30\u6982\u8ff0"},"content":{"rendered":"
<\/div>\n

\u78b3\u5316\u77fd (SiC) \u56e0\u5176\u5bec\u5e36\u9699\u3001\u9ad8\u71b1\u5c0e\u7387\u3001\u9ad8\u51fb\u7a7f\u96fb\u5834\u548c\u9ad8\u96fb\u5b50\u6f02\u79fb\u901f\u5ea6\uff0c\u5df2\u6210\u70ba\u9ad8\u6027\u80fd\u529f\u7387\u534a\u5c0e\u9ad4\u5143\u4ef6\u7684\u95dc\u9375\u6750\u6599\u3002\u9019\u4e9b\u7279\u6027\u4f7f SiC \u529f\u7387\u5143\u4ef6\u6210\u70ba\u96fb\u52d5\u8eca\u3001\u5132\u80fd\u7cfb\u7d71\u548c\u53ef\u518d\u751f\u80fd\u6e90\u8b8a\u63db\u5668\u7684\u7406\u60f3\u6750\u6599\uff0c\u8207\u50b3\u7d71\u77fd\u5143\u4ef6\u76f8\u6bd4\uff0c\u5b83\u5177\u6709\u66f4\u4f4e\u7684\u50b3\u5c0e\u640d\u8017\u548c\u66f4\u9ad8\u7684\u6548\u7387\u3002\u672c\u6587\u5c07\u91dd\u5c0d SiC \u529f\u7387\u5143\u4ef6\u88fd\u9020\u63d0\u4f9b\u8a73\u7d30\u7684\u6280\u8853\u6982\u8ff0\uff0c\u91cd\u9ede\u5728\u65bc\u57fa\u677f\u3001\u78ca\u6676\u751f\u9577\u3001\u647b\u96dc\u63a7\u5236\u3001\u7f3a\u9677\u7ba1\u7406\u4ee5\u53ca\u76ee\u524d\u7684\u7522\u696d\u8da8\u52e2\u3002.<\/p>\n\n\n\n

\"\"<\/figure>\n\n\n\n

1.\u6838\u5fc3\u6750\u6599\uff1a 4H-SiC \u55ae\u6676\u57fa\u677f<\/a><\/h2>\n\n\n\n

4H-SiC \u662f\u529f\u7387\u5143\u4ef6\u88fd\u9020\u4e2d\u6700\u5e38\u7528\u7684\u591a\u6676\u77fd\u985e\u578b\u30024H \u201c\u8868\u793a\u6cbf c \u8ef8\u7684\u5806\u758a\u9806\u5e8f\uff0c\u5176\u4e2d\u56db\u500b Si-C \u96d9\u5c64\u5f62\u6210\u4e00\u500b\u516d\u89d2\u55ae\u5143\u80de\uff08ABCB \u5806\u758a\uff09\u3002\u4e3b\u8981\u7684\u6750\u6599\u512a\u52e2\u5305\u62ec<\/p>\n\n\n\n

\u8ca1\u7522<\/th>\u50f9\u503c<\/th>\u610f\u7fa9<\/th><\/tr><\/thead>
\u5e36\u9699<\/td>~3.3 eV<\/td>\u9ad8\u6eab\u64cd\u4f5c<\/td><\/tr>
\u95dc\u9375\u5206\u89e3\u9818\u57df<\/td>2-3 MV\/cm<\/td>\u9ad8\u96fb\u58d3\u8010\u53d7\u6027<\/td><\/tr>
\u71b1\u50b3\u5c0e<\/td>~4.9 W\/cm-K<\/td>\u9ad8\u6548\u6563\u71b1<\/td><\/tr>
\u96fb\u5b50\u6f02\u79fb\u901f\u5ea6<\/td>~2\u00d710\u2077 cm\/s<\/td>\u9069\u5408\u9ad8\u983b\u64cd\u4f5c<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

\u9019\u4e9b\u7279\u6027\u4f7f 4H-SiC \u6210\u70ba\u88fd\u9020\u9ad8\u96fb\u58d3\u3001\u9ad8\u96fb\u6d41\u3001\u9ad8\u6eab\u548c\u9ad8\u983b\u5143\u4ef6\u7684\u7406\u60f3\u9078\u64c7\u3002.<\/p>\n\n\n\n

2.\u57fa\u677f\u65b9\u5411\u8207\u96e2\u8ef8\u8a2d\u8a08<\/h2>\n\n\n\n

SiC {0001} \u6676\u9762\u53ef\u5206\u70ba\u4ee5\u4e0b\u5e7e\u7a2e\uff1a<\/p>\n\n\n\n

    \n
  • Si-face (0001)<\/strong>:\u6700\u4e0a\u9762\u7684\u539f\u5b50\u662f\u77fd\u3002\u8868\u9762\u7279\u6027\u6709\u5229\u65bc\u53d7\u63a7\u7684\u5916\u5ef6\u751f\u9577\u548c\u4f4e\u7f3a\u9677\u5bc6\u5ea6\u3002.<\/li>\n\n\n\n
  • C \u9762 (000-1)<\/strong>:\u6700\u4e0a\u9762\u7684\u539f\u5b50\u662f\u78b3\u3002\u9ad8\u5316\u5b78\u6d3b\u6027\u6703\u5c0e\u81f4\u66f4\u5feb\u7684\u6210\u9577\u901f\u5ea6\uff0c\u4f46\u6703\u589e\u52a0\u7f3a\u9677\u7684\u5f62\u6210\uff0c\u4ee5\u53ca\u66f4\u5177\u6311\u6230\u6027\u7684\u647b\u96dc\u63a7\u5236\u3002.<\/li>\n<\/ul>\n\n\n\n

    \u5546\u7528\u529f\u7387\u5143\u4ef6\u5e7e\u4e4e\u5b8c\u5168\u4f7f\u7528\u77fd\u9762\u96e2\u8ef8\u57fa\u677f\uff0c\u901a\u5e38\u671d \u65b9\u5411\u50be\u659c 3.5\u00b0-4\u00b0\u3002\u9019\u6703\u7522\u751f\u539f\u5b50\u968e\u68af\uff0c\u652f\u63f4\u968e\u68af\u5f0f\u751f\u9577\u3001\u6291\u5236\u4e8c\u7dad\u6838\u5f62\u6210\u3001\u6e1b\u5c11\u7f3a\u9677\uff0c\u4e26\u7522\u751f\u539f\u5b50\u7d1a\u5e73\u5766\u7684\u78ca\u6676\u5c64\u3002.<\/p>\n\n\n\n

    3.SiC \u78ca\u6676\u6210\u9577\u88fd\u7a0b<\/h2>\n\n\n\n

    \u5916\u5ef6\u751f\u9577\u662f\u5728\u55ae\u6676\u57fa\u677f\u4e0a\u6c89\u7a4d\u55ae\u6676 SiC \u5c64\uff0c\u4e26\u4fdd\u6301\u76f8\u540c\u7684\u6676\u9ad4\u7d50\u69cb\u3002\u5b83\u5f62\u6210\u88dd\u7f6e\u7684\u6709\u6e90\u5340\u57df\uff0c\u4f8b\u5982 MOSFET \u6f02\u79fb\u5c64\u548c P+ \u5c64\u3002\u6a19\u6e96\u7684\u65b9\u6cd5\u662f \u5316\u5b78\u6c23\u76f8\u6c89\u7a4d (CVD)<\/strong>.<\/p>\n\n\n\n

    3.1 \u57fa\u6750\u88fd\u5099<\/h3>\n\n\n\n
    \u6b65\u9a5f<\/th>\u76ee\u7684<\/th>\u5178\u578b\u53c3\u6578<\/th><\/tr><\/thead>
    \u6c2b\u8755\u523b<\/td>\u53bb\u9664\u522e\u75d5\u3001\u539f\u751f\u6c27\u5316\u7269\u3001\u6c61\u67d3\uff0c\u5f62\u6210\u539f\u5b50\u968e\u5c64<\/td>1500-1650\u00b0C, \u6578\u5206\u9418<\/td><\/tr>
    \u6e05\u6f54<\/td>\u53bb\u9664\u5fae\u7c92\u548c\u91d1\u5c6c\u96e2\u5b50<\/td>RCA \u7121\u7dda (SC1\u3001SC2\u3001DHF)<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

    3.2 \u78ca\u6676\u751f\u9577\u53c3\u6578<\/h3>\n\n\n\n
    \u53c3\u6578<\/th>\u5178\u578b\u7bc4\u570d<\/th>\u6ce8\u610f\u4e8b\u9805<\/th><\/tr><\/thead>
    \u6eab\u5ea6<\/td>1500-1650\u00b0C<\/td>\u9ad8\u6eab\u53ef\u4fc3\u9032\u524d\u9ad4\u5206\u89e3\u548c\u539f\u5b50\u8868\u9762\u64f4\u6563<\/td><\/tr>
    \u58d3\u529b<\/td>100-300 \u6beb\u5df4<\/td>\u4f4e\u58d3\u53ef\u6539\u5584\u539a\u5ea6\u5747\u52fb\u6027\uff0c\u6e1b\u5c11\u5fae\u7c92\u5f62\u6210<\/td><\/tr>
    \u77fd\u6e90<\/td>SiH\u2084 \u6216 SiH\u2082Cl\u2082<\/td>SiH\u2082Cl\u2082 \u512a\u5148\u6291\u5236 3C-SiC \u805a\u985e\u548c\u4e09\u89d2\u5f62\u7f3a\u9677<\/td><\/tr>
    \u78b3\u6e90<\/td>C\u2083H\u2088 (\u4e19\u70f7) \u6216 C\u2082H\u2084 (\u4e59\u70ef)<\/td>\u4e19\u70f7\u6700\u5e38\u898b\uff1b\u4e59\u70ef\u7528\u65bc\u4f4e\u6eab\u751f\u9577\u6216\u6539\u5584\u5747\u4e00\u6027<\/td><\/tr>
    Si\/C \u6bd4\u7387<\/td>0.7-1.0<\/td>\u7565\u5fae\u5bcc\u542b C\uff0c\u4ee5\u907f\u514d\u77fd\u6ef4\u548c\u591a\u6676\u578b\u5167\u542b\u7269<\/td><\/tr>
    \u647b\u96dc\uff08N \u578b\uff09<\/td>N\u2082 \u6216 NH\u2083<\/td>NH\u2083 \u63d0\u4f9b\u66f4\u9ad8\u7684\u6548\u7387\u548c\u66f4\u5c11\u7684\u524d\u9ad4\u9700\u6c42<\/td><\/tr>
    \u647b\u96dc\uff08P \u578b\uff09<\/td>TMA \u6216 TEA<\/td>\u6548\u7387\u4f4e\uff0c\u9700\u8981\u7cbe\u78ba\u63a7\u5236\u4ee5\u9632\u6b62 Al-C \u8907\u5408\u7269\u7684\u5f62\u6210<\/td><\/tr>
    \u6210\u9577\u7387<\/td>5-20 \u00b5m\/h<\/td>\u5e73\u8861\u751f\u7522\u6548\u7387\u8207\u7455\u75b5\u63a7\u5236<\/td><\/tr>
    \u968e\u68af\u5f0f\u6210\u9577<\/td>\u900f\u904e\u96e2\u8ef8\u57fa\u677f\u548c\u53ef\u63a7\u6eab\u5ea6\u3001\u58d3\u529b\u3001Si\/C \u6bd4\u7387\u5be6\u73fe<\/td>\u6291\u5236 2D \u6210\u6838\u3001\u6e1b\u5c11\u7f3a\u9677\u3001\u78ba\u4fdd\u539f\u5b50\u5e73\u9762\u5ea6<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

    \u5728\u751f\u9577\u904e\u7a0b\u4e2d\uff0c\u91d1\u5c6c\u539f\u5b50\u6703\u512a\u5148\u7d50\u5408\u5728\u968e\u68af\u908a\u7de3\uff0c\u800c\u968e\u68af\u5247\u6703\u5728\u68af\u7530\u4e0a\u64f4\u6563\uff0c\u5f62\u6210\u5e73\u6ed1\u3001\u4f4e\u7f3a\u9677\u7684\u78ca\u6676\u5c64\u3002.<\/p>\n\n\n\n

    3.3 \u51b7\u537b\u8207\u5378\u8f09<\/h3>\n\n\n\n

    \u751f\u9577\u5b8c\u6210\u5f8c\uff0c\u6676\u5713\u6703\u5728 H\u2082 \u6216\u60f0\u6027\u6c23\u9ad4\u4e0b\u51b7\u537b\uff0c\u4ee5\u9632\u6b62\u71b1\u61c9\u529b\u548c\u6676\u5713\u7834\u88c2\u3002\u53ea\u6709\u5728\u9054\u5230\u5b89\u5168\u6eab\u5ea6\u5f8c\uff0c\u6676\u5713\u624d\u6703\u5f9e\u53cd\u61c9\u5668\u4e2d\u53d6\u51fa\u3002.<\/p>\n\n\n\n

    4.\u7f3a\u9677\u985e\u578b\u8207\u6311\u6230<\/h2>\n\n\n\n

    SiC \u78ca\u6676\u5728\u7f3a\u9677\u63a7\u5236\u65b9\u9762\u9762\u81e8\u6578\u9805\u91cd\u5927\u6311\u6230\uff1a<\/p>\n\n\n\n

    \u7f3a\u9677\u985e\u578b<\/th>\u539f\u56e0<\/th>\u5c0d\u88dd\u7f6e\u7684\u5f71\u97ff<\/th><\/tr><\/thead>
    \u4e09\u89d2\u5f62\u7f3a\u9677<\/td>\u57fa\u677f\u5fae\u7c92\u3001\u522e\u75d5\u30013C-SiC \u593e\u96dc\u7269<\/td>\u964d\u4f4e\u826f\u7387\u548c\u53ef\u9760\u6027<\/td><\/tr>
    \u80e1\u863f\u8514\u7f3a\u9677<\/td>\u78b3\u96dc\u8cea\u6216\u57fa\u677f\u7f3a\u9677<\/td>\u8868\u9762\u7c97\u7cd9\u5ea6\u3001\u5c40\u90e8\u7f3a\u9677<\/td><\/tr>
    \u591a\u578b\u5305\u542b<\/td>3C-SiC \u6676\u7c92<\/td>\u7834\u58de\u55ae\u6676\u9ad4\u5b8c\u6574\u6027<\/td><\/tr>
    \u57fa\u677f\u907a\u50b3\u7f3a\u9677<\/td>\u57fa\u5e95\u5e73\u9762\u4f4d\u932f (BPD)\u3001\u7a7f\u7d0b\u908a\u7de3\u4f4d\u932f (TED)<\/td>BPD \u5728\u9ad8\u96fb\u5834\u4e0b\u53ef\u8f49\u63db\u70ba\u5806\u758a\u65b7\u5c64\uff0c\u589e\u52a0\u5c0e\u901a\u96fb\u963b<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n

    \u512a\u5316\u7684\u968e\u68af\u6d41\u751f\u9577\u548c\u4ed4\u7d30\u7684\u57fa\u677f\u88fd\u5099\u53ef\u4ee5\u90e8\u5206\u963b\u65b7 BPD \u7684\u50b3\u64ad\u4e26\u964d\u4f4e\u5176\u5f71\u97ff\u3002.<\/p>\n\n\n\n

    5.\u7522\u696d\u8da8\u52e2<\/h2>\n\n\n\n
      \n
    1. \u8f03\u5927\u7684\u6676\u5713\u5c3a\u5bf8<\/strong>:\u5f9e 100 mm \u6676\u5713\u904e\u6e21\u5230 150 mm \u548c 200 mm \u6676\u5713\uff0c\u4ee5\u63d0\u9ad8\u55ae\u6676\u5229\u7528\u7387\u3002.<\/li>\n\n\n\n
    2. \u8f03\u4f4e\u7684\u7f3a\u9677\u5bc6\u5ea6<\/strong>:\u512a\u5316\u6eab\u5ea6\u3001\u58d3\u529b\u3001Si\/C \u6bd4\u7387\u548c\u524d\u9ad4\u9078\u64c7\uff0c\u4ee5\u6e1b\u5c11 BPD \u548c\u4e09\u89d2\u5f62\u7f3a\u9677\u3002.<\/li>\n\n\n\n
    3. \u6539\u5584\u85e5\u6aa2<\/strong>:\u7279\u5225\u9069\u7528\u65bc P \u578b\u647b\u96dc\uff0c\u4ee5\u9054\u5230\u5747\u52fb\u6027\u548c\u6548\u7387\u3002.<\/li>\n\n\n\n
    4. \u9ad8\u6210\u9577\u7387<\/strong>:\u63a2\u7d22 >30 \u00b5m\/h \u7684\u751f\u9577\u901f\u5ea6\uff0c\u540c\u6642\u4f7f\u7528 SiHCl\u2083 (TCS) \u7b49\u5148\u9032\u524d\u9ad4\u4f86\u7dad\u6301\u54c1\u8cea\u3002.<\/li>\n\n\n\n
    5. \u539f\u4f4d\u76e3\u6e2c<\/strong>:\u96f7\u5c04\u5e72\u6d89\u5100\u3001\u5149\u5b78\u9ad8\u6e29\u6e2c\u91cf\u6cd5\u548c\u6a62\u5713\u6e2c\u91cf\u6cd5\u53ef\u5373\u6642\u76e3\u63a7\u6210\u9577\u3002.<\/li>\n\n\n\n
    6. \u591a\u5c64\u7d50\u69cb<\/strong>:\u7528\u65bc MOSFET \u548c IGBT \u7b49\u8907\u96dc\u88dd\u7f6e\u7684 N+\/N-\/P-well\/N+ \u5c64\u7684\u7cbe\u5bc6\u78ca\u6676\u3002.<\/li>\n<\/ol>\n\n\n\n

      6.\u7e3d\u7d50<\/h2>\n\n\n\n

      \u5728 4H-SiC Si \u9762\u96e2\u8ef8\u57fa\u677f\u4e0a\u9032\u884c SiC \u5916\u5ef6\u751f\u9577\u662f\u9ad8\u6027\u80fd\u529f\u7387\u5668\u4ef6\u7684\u57fa\u790e\u3002\u638c\u63e1\u57fa\u677f\u53d6\u5411\u3001\u96e2\u8ef8\u8a2d\u8a08\u3001\u968e\u6bb5\u6d41\u751f\u9577\u4ee5\u53ca CVD \u53c3\u6578\u7684\u7cbe\u78ba\u63a7\u5236\u5c0d\u65bc\u5be6\u73fe\u4f4e\u7f3a\u9677\u3001\u5747\u52fb\u4e14\u9ad8\u54c1\u8cea\u7684\u78ca\u6676\u5c64\u81f3\u95dc\u91cd\u8981\u3002\u6676\u5713\u5c3a\u5bf8\u3001\u751f\u9577\u7387\u3001\u7f3a\u9677\u63a7\u5236\u548c\u539f\u4f4d\u76e3\u63a7\u65b9\u9762\u7684\u6301\u7e8c\u9032\u6b65\uff0c\u5c07\u7e7c\u7e8c\u63a8\u52d5 SiC \u88dd\u7f6e\u671d\u8457\u66f4\u9ad8\u6548\u80fd\u3001\u66f4\u4f4e\u6210\u672c\u548c\u66f4\u5ee3\u6cdb\u61c9\u7528\u65bc\u7bc0\u80fd\u96fb\u5b50\u7522\u54c1\u7684\u65b9\u5411\u767c\u5c55\u3002.<\/p>","protected":false},"excerpt":{"rendered":"

      Silicon carbide (SiC) has emerged as a critical material in high-performance power semiconductor devices due to its wide bandgap, high thermal conductivity, high breakdown field, and high electron drift velocity. These properties make SiC power devices ideal for electric vehicles, energy storage systems, and renewable energy inverters, offering lower conduction losses and higher efficiency compared […]<\/p>\n","protected":false},"author":2,"featured_media":8803,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"_uag_custom_page_level_css":"","footnotes":""},"categories":[12,27],"tags":[1166,2175,2173,2178,1305,1306,1819,1313,1240,1048,2185,2183,2184,1338,1781,2182,2181,1340,2177,1807,2176,2180,2170,2171,1056,1776,1111,2174,2172,2179],"class_list":["post-8802","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-news","category-companynews","tag-4h-sic","tag-atomic-steps","tag-c-face","tag-carrot-defects","tag-chemical-vapor-deposition","tag-cvd","tag-defect-control","tag-doping-control","tag-epitaxial-growth","tag-epitaxy","tag-high-performance-semiconductor","tag-high-temperature-growth","tag-igbt","tag-jbs-diode","tag-large-diameter-wafer-2","tag-layer-uniformity","tag-low-pressure-growth","tag-mosfet","tag-n-type-doping","tag-off-axis-substrate","tag-p-type-doping","tag-polytype-inclusion","tag-power-device","tag-si-face","tag-sic","tag-sic-power-device","tag-silicon-carbide","tag-step-flow-growth","tag-substrate-preparation","tag-triangular-defects"],"acf":[],"uagb_featured_image_src":{"full":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1.webp",600,600,false],"thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1-150x150.webp",150,150,true],"medium":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1-300x300.webp",300,300,true],"medium_large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1.webp",600,600,false],"large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1.webp",600,600,false],"1536x1536":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1.webp",600,600,false],"2048x2048":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1.webp",600,600,false],"trp-custom-language-flag":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1-12x12.webp",12,12,true],"woocommerce_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1-300x300.webp",300,300,true],"woocommerce_single":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1.webp",600,600,false],"woocommerce_gallery_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/04\/12inch-Sic-wafer-1-100x100.webp",100,100,true]},"uagb_author_info":{"display_name":"lydia","author_link":"https:\/\/www.sic-wafers.com\/zh\/author\/lydia\/"},"uagb_comment_info":0,"uagb_excerpt":"Silicon carbide (SiC) has emerged as a critical material in high-performance power semiconductor devices due to its wide bandgap, high thermal conductivity, high breakdown field, and high electron drift velocity. These properties make SiC power devices ideal for electric vehicles, energy storage systems, and renewable energy inverters, offering lower conduction losses and higher efficiency compared...","_links":{"self":[{"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/posts\/8802","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/comments?post=8802"}],"version-history":[{"count":1,"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/posts\/8802\/revisions"}],"predecessor-version":[{"id":8804,"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/posts\/8802\/revisions\/8804"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/media\/8803"}],"wp:attachment":[{"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/media?parent=8802"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/categories?post=8802"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/tags?post=8802"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}