- \n
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Production-grade<\/strong> wafers: Optimized for device fabrication, epitaxial growth, and mass production processes.<\/p>\n<\/li>\n
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Dummy-grade<\/strong> wafers: Designed for equipment calibration, process tuning, and non-device runs, where surface perfection and defect control are less critical.<\/p>\n<\/li>\n<\/ul>\n
Available in both green (600 \u03bcm)<\/strong> \u548c transparent (700 \u03bcm)<\/strong> thicknesses, these wafers can meet diverse process requirements and are compatible with standard 12-inch semiconductor processing equipment.<\/p>\n
![\"\"](\"https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/\u5fae\u4fe1\u56fe\u7247_20251225172356_110_430-300x128.webp\")
<\/p>\n\n
2. 12-Inch Silicon Carbide Substrate Specification<\/h2>\n
\n\n\n\n
\n \n\u9805\u76ee<\/th>\n N-type Production Grade<\/th>\n N-type Dummy Grade<\/th>\n SI-type Production Grade<\/th>\n<\/tr>\n<\/thead>\n \n Crystal Structure (Polytype)<\/strong><\/td>\n 4H-N SiC<\/td>\n 4H-N SiC<\/td>\n 4H SiC<\/td>\n<\/tr>\n \n Doping Type<\/strong><\/td>\n N-type<\/td>\n N-type<\/td>\n \/<\/td>\n<\/tr>\n \n \u76f4\u5f91<\/strong><\/td>\n 300 \u00b1 0.5 mm<\/td>\n 300 \u00b1 0.5 mm<\/td>\n 300 \u00b1 0.5 mm<\/td>\n<\/tr>\n \n \u539a\u5ea6<\/strong><\/td>\n Green: 600 \u00b1 100 \u03bcm \/ Transparent: 700 \u00b1 100 \u03bcm<\/td>\n Same as Production<\/td>\n Same as Production<\/td>\n<\/tr>\n \n Surface Orientation<\/strong><\/td>\n 4\u00b0 toward <11-20> \u00b1 0.5\u00b0<\/td>\n Same<\/td>\n Same<\/td>\n<\/tr>\n \n Primary Flat \/ Notch<\/strong><\/td>\n Notch \/ Full Round<\/td>\n Notch \/ Full Round<\/td>\n Notch \/ Full Round<\/td>\n<\/tr>\n \n Notch Depth<\/strong><\/td>\n 1.0 \u2013 1.5 mm<\/td>\n 1.0 \u2013 1.5 mm<\/td>\n 1.0 \u2013 1.5 mm<\/td>\n<\/tr>\n \n TTV (Total Thickness Variation)<\/strong><\/td>\n \u2264 10 \u03bcm<\/td>\n NA<\/td>\n \u2264 10 \u03bcm<\/td>\n<\/tr>\n \n Micropipe Density (MPD)<\/strong><\/td>\n \u2264 5 ea\/cm\u00b2<\/td>\n NA<\/td>\n \u2264 5 ea\/cm\u00b2<\/td>\n<\/tr>\n \n Resistivity Measurement<\/strong><\/td>\n Measured at central 8-inch equivalent zone<\/td>\n NA<\/td>\n Measured at central 8-inch equivalent zone<\/td>\n<\/tr>\n \n Si-Surface Treatment<\/strong><\/td>\n CMP Polished<\/td>\n Grinding<\/td>\n CMP Polished<\/td>\n<\/tr>\n \n Edge Processing<\/strong><\/td>\n Chamfer<\/td>\n No Chamfer<\/td>\n Chamfer<\/td>\n<\/tr>\n \n Edge Chips<\/strong><\/td>\n Allowed depth < 0.5 mm<\/td>\n Allowed depth < 1.0 mm<\/td>\n Allowed depth < 0.5 mm<\/td>\n<\/tr>\n \n Laser Marking<\/strong><\/td>\n C-side marking \/ Customer specified<\/td>\n C-side marking<\/td>\n C-side marking \/ Customer specified<\/td>\n<\/tr>\n \n Polytype Inspection (Polarized Light)<\/strong><\/td>\n No polytype (3 mm edge exclusion)<\/td>\n Polytype area < 5% (3 mm edge exclusion)<\/td>\n No polytype (3 mm edge exclusion)<\/td>\n<\/tr>\n \n Crack Inspection (High-Intensity Light)<\/strong><\/td>\n No cracks (3 mm edge exclusion)<\/td>\n Not specified<\/td>\n No cracks (3 mm edge exclusion)<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n 3. Grade Definition<\/h2>\n
\u751f\u7522\u7b49\u7d1a<\/strong>
Production-grade wafers meet the highest standards of dimensional uniformity, surface quality, and defect control. They are suitable for:<\/p>\n- \n
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Epitaxial layer growth for SiC power devices<\/p>\n<\/li>\n
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High-voltage and high-frequency device fabrication<\/p>\n<\/li>\n
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Mass production lines requiring tight TTV, low micropipe density, and strict crack control<\/p>\n<\/li>\n<\/ul>\n
\u5047\u8a2d\u7b49\u7d1a<\/strong>
Dummy-grade wafers are intended for:<\/p>\n- \n
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Equipment setup and calibration<\/p>\n<\/li>\n
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Process development and optimization<\/p>\n<\/li>\n
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Non-device runs where surface polishing, chamfering, and micropipe control are non-critical<\/p>\n<\/li>\n<\/ul>\n
![\"12](\"https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/\u5fae\u4fe1\u56fe\u7247_20251225173051_112_430-300x300.webp\")
<\/p>\n4. Inspection & Quality Assurance<\/h2>\n
All production-grade wafers undergo rigorous inspection to ensure reliability and consistency:<\/p>\n
- \n
- \n
Polytype verification<\/strong> using polarized light microscopy to ensure crystal uniformity<\/p>\n<\/li>\n
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Crack detection<\/strong> with high-intensity light to identify micro-cracks<\/p>\n<\/li>\n
- \n
Dimensional verification<\/strong>: diameter, thickness, and total thickness variation (TTV)<\/p>\n<\/li>\n
- \n
Surface and edge assessment<\/strong>: evaluating edge chamfer, chipping, and surface polish quality<\/p>\n<\/li>\n<\/ul>\n
Inspection zones exclude a 3 mm edge margin, consistent with industry standards, ensuring that the wafer interior meets precise electrical and mechanical specifications.<\/p>\n
5. Typical Applications<\/h2>\n
- \n
- \n
SiC Power Devices<\/strong>: MOSFETs, diodes, and IGBTs<\/p>\n<\/li>\n
- \n
High-Voltage Applications<\/strong>: Automotive, industrial, and renewable energy inverters<\/p>\n<\/li>\n
- \n
RF and Microwave Devices<\/strong>: Semi-insulating (SI) wafers for RF, microwave, and high-frequency applications<\/p>\n<\/li>\n
- \n
Process Development & Equipment Qualification<\/strong>: Using dummy wafers for calibration, laser tuning, and prototype runs<\/p>\n<\/li>\n<\/ul>\n
6. Frequently Asked Questions (FAQ)<\/h2>\n
Q1: What is the difference between 4H-N SiC and SI-type 4H SiC?<\/strong>
4H-N SiC is N-type conductive material ideal for power devices, while SI-type 4H SiC is semi-insulating, used mainly in RF and high-frequency applications.<\/p>\nQ2: Why measure resistivity in the central 8-inch equivalent zone?<\/strong>
The central region of a 12-inch wafer offers the most uniform electrical properties. Measuring this zone ensures stable and comparable resistivity across wafers.<\/p>\nQ3: Can the notch orientation or laser marking be customized?<\/strong>
Yes. Both notch configuration and laser marking content can be customized to meet specific customer requirements.<\/p>\nQ4: Are dummy wafers suitable for epitaxy or device fabrication?<\/strong>
No. Dummy wafers are designed solely for equipment setup and process testing, not for device production.<\/p>\nQ5: What edge quality is guaranteed for production wafers?<\/strong>
Production-grade wafers feature chamfered edges with edge chipping depth \u2264 0.5 mm for safe handling and process compatibility.<\/p>\nQ6: Are green and transparent wafers available?<\/strong>
Yes. Green wafers (600 \u03bcm) and transparent wafers (700 \u03bcm) are available depending on processing needs.<\/p>\nQ7: Can the wafers be used in extreme high-temperature or high-voltage processes?<\/strong>
Absolutely. 4H-N SiC substrates provide superior thermal conductivity and electrical stability, making them ideal for high-temperature, high-voltage, and high-frequency device manufacturing.<\/p>","protected":false},"excerpt":{"rendered":"The 12-inch 4H-N silicon carbide (SiC) substrate is a premium material platform engineered for the most demanding applications in power electronics, high-voltage devices, and RF\/microwave components.<\/p>","protected":false},"featured_media":8324,"comment_status":"open","ping_status":"closed","template":"","meta":{"_acf_changed":false,"_uag_custom_page_level_css":""},"product_brand":[],"product_cat":[1091],"product_tag":[1530,1594,1474,1597,1595,1596],"class_list":{"0":"post-8323","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-4h-n","7":"product_tag-12-inch-sic-wafer","8":"product_tag-4h-n-sic","9":"product_tag-n-type-sic","10":"product_tag-power-electronics","11":"product_tag-si-type-sic","12":"product_tag-silicon-carbide-substrate","14":"first","15":"instock","16":"shipping-taxable","17":"product-type-simple"},"acf":[],"uagb_featured_image_src":{"full":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/\u672a\u547d\u540d\u7684\u8bbe\u8ba1-37.webp",1000,1000,false],"thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/\u672a\u547d\u540d\u7684\u8bbe\u8ba1-37-150x150.webp",150,150,true],"medium":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/\u672a\u547d\u540d\u7684\u8bbe\u8ba1-37-300x300.webp",300,300,true],"medium_large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/\u672a\u547d\u540d\u7684\u8bbe\u8ba1-37-768x768.webp",768,768,true],"large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/\u672a\u547d\u540d\u7684\u8bbe\u8ba1-37.webp",800,800,false],"1536x1536":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/\u672a\u547d\u540d\u7684\u8bbe\u8ba1-37.webp",1000,1000,false],"2048x2048":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/\u672a\u547d\u540d\u7684\u8bbe\u8ba1-37.webp",1000,1000,false],"trp-custom-language-flag":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/\u672a\u547d\u540d\u7684\u8bbe\u8ba1-37.webp",12,12,false],"woocommerce_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/\u672a\u547d\u540d\u7684\u8bbe\u8ba1-37-300x300.webp",300,300,true],"woocommerce_single":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/\u672a\u547d\u540d\u7684\u8bbe\u8ba1-37-600x600.webp",600,600,true],"woocommerce_gallery_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2025\/12\/\u672a\u547d\u540d\u7684\u8bbe\u8ba1-37-100x100.webp",100,100,true]},"uagb_author_info":{"display_name":"lydia","author_link":"https:\/\/www.sic-wafers.com\/zh\/author\/"},"uagb_comment_info":0,"uagb_excerpt":"The 12-inch 4H-N silicon carbide (SiC) substrate is a premium material platform engineered for the most demanding applications in power electronics, high-voltage devices, and RF\/microwave components.","_links":{"self":[{"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/product\/8323","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/comments?post=8323"}],"version-history":[{"count":2,"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/product\/8323\/revisions"}],"predecessor-version":[{"id":8331,"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/product\/8323\/revisions\/8331"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/media\/8324"}],"wp:attachment":[{"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/media?parent=8323"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/product_brand?post=8323"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/product_cat?post=8323"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/product_tag?post=8323"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}
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