{"id":8968,"date":"2026-06-09T11:41:47","date_gmt":"2026-06-09T03:41:47","guid":{"rendered":"https:\/\/www.sic-wafers.com\/?post_type=product&p=8968"},"modified":"2026-06-09T11:59:07","modified_gmt":"2026-06-09T03:59:07","slug":"device-grade-hbn-single-crystal-for-advanced-electronic-and-photonic-applications","status":"publish","type":"product","link":"https:\/\/www.sic-wafers.com\/zh\/product\/device-grade-hbn-single-crystal-for-advanced-electronic-and-photonic-applications\/","title":{"rendered":"Device-Grade hBN Single Crystal for Advanced Electronic and Photonic Applications"},"content":{"rendered":"

Device-Grade hBN Single Crystal is a premium hexagonal boron nitride material developed for advanced semiconductor research, two-dimensional materials, graphene electronics, and next-generation photonic devices. Produced through a proprietary crystal growth process under atmospheric pressure, these high-quality hBN crystals exhibit excellent crystallinity, low defect density, outstanding dielectric properties, and exceptional optical performance.<\/p>\n

As a wide-bandgap layered material, hBN has become one of the most important building blocks in the rapidly growing field of two-dimensional materials. Its atomically smooth surface, chemical stability, and superior electrical insulation make it an ideal substrate and encapsulation layer for graphene and other van der Waals materials.<\/p>\n

Our device-grade hBN crystals are supplied as millimeter-scale bulk single crystals with natural growth facets, providing researchers and technology developers with a reliable platform for high-performance device fabrication.<\/p>\n

\"Device-Grade \"Device-Grade \"Device-Grade<\/p>\n

\n
\n<\/div>\n

Key Benefits<\/h2>\n

Exceptional Crystal Quality<\/h3>\n

Carefully controlled crystal growth results in large single-crystal domains with excellent structural integrity and low impurity levels.<\/p>\n

Ideal for Graphene Devices<\/h3>\n

The atomically flat surface minimizes carrier scattering and supports ultra-high mobility graphene electronic devices.<\/p>\n

Excellent Electrical Insulation<\/h3>\n

High dielectric breakdown strength enables reliable operation in advanced nanoelectronic and quantum devices.<\/p>\n

Superior Optical Properties<\/h3>\n

The material demonstrates strong ultraviolet band-edge emission and excellent optical characteristics suitable for photonic applications.<\/p>\n

Easy Exfoliation<\/h3>\n

The layered crystal structure allows the preparation of thin hBN flakes for research and device fabrication.<\/p>\n

\n
\n<\/div>\n

\u6280\u8853\u898f\u683c<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n
\u8ca1\u7522<\/th>\n\u50f9\u503c<\/th>\n<\/tr>\n
\u6750\u8cea<\/td>\nHexagonal Boron Nitride (hBN)<\/td>\n<\/tr>\n
Crystal Type<\/td>\nSingle Crystal<\/td>\n<\/tr>\n
\u7b49\u7d1a<\/td>\nDevice Grade<\/td>\n<\/tr>\n
\u6210\u9577\u65b9\u5f0f<\/td>\nProprietary Atmospheric-Pressure Growth<\/td>\n<\/tr>\n
Crystal Form<\/td>\nBulk Crystal<\/td>\n<\/tr>\n
Typical Lateral Size<\/td>\n\u2265 1 mm<\/td>\n<\/tr>\n
Surface Condition<\/td>\nNatural Growth Surface<\/td>\n<\/tr>\n
Package Type<\/td>\nChip Carrier<\/td>\n<\/tr>\n
Quantity per Package<\/td>\n5\u201310 Crystals<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

Electrical Characteristics<\/h3>\n\n\n\n\n
\u53c3\u6578<\/td>\n\u5178\u578b\u503c<\/td>\n<\/tr>\n
Dielectric Breakdown Field<\/td>\n1.64 \u00b1 0.06 V\/nm<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

Optical Characteristics<\/h3>\n\n\n\n\n\n\n
\u53c3\u6578<\/td>\n\u5178\u578b\u503c<\/td>\n<\/tr>\n
UV Band-Edge Emission<\/td>\nApproximately 215 nm<\/td>\n<\/tr>\n
Optical Transparency<\/td>\n\u9ad8<\/td>\n<\/tr>\n
Luminescence Quality<\/td>\nAdvanced Research Grade<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

Raman Properties<\/h3>\n\n\n\n\n
\u53c3\u6578<\/td>\n\u5178\u578b\u503c<\/td>\n<\/tr>\n
E\u2082g Raman Peak Linewidth<\/td>\n7.88 cm\u207b\u00b9<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

Graphene Device Reference Performance<\/h3>\n\n\n\n\n\n
\u53c3\u6578<\/td>\n\u5178\u578b\u503c<\/td>\n<\/tr>\n
Graphene Mobility at Room Temperature<\/td>\nApproximately 80,000 cm\u00b2\/V\u00b7s<\/td>\n<\/tr>\n
Carrier Density<\/td>\n1 \u00d7 10\u00b9\u00b2 cm\u207b\u00b2<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

\"Device-Grade<\/p>\n

 <\/p>\n

 <\/p>\n

\u61c9\u7528<\/h2>\n

Graphene Electronics<\/h3>\n

Widely used as an ultra-flat substrate and encapsulation layer for graphene transistors, sensors, and high-speed electronic devices.<\/p>\n

Two-Dimensional Material Research<\/h3>\n

Suitable for constructing van der Waals heterostructures involving graphene, MoS\u2082, WS\u2082, WSe\u2082, and other layered materials.<\/p>\n

Quantum Devices<\/h3>\n

Provides an ideal platform for quantum transport studies, correlated electronic systems, and advanced quantum technologies.<\/p>\n

Nanophotonics<\/h3>\n

Supports phonon-polariton phenomena and nanoscale light manipulation for next-generation photonic devices.<\/p>\n

Deep Ultraviolet Technologies<\/h3>\n

The intrinsic UV emission properties of hBN make it attractive for deep-UV detectors, emitters, and optical research.<\/p>\n

Advanced Semiconductor Research<\/h3>\n

Used in universities, national laboratories, and industrial R&D centers working on future semiconductor technologies.<\/p>\n

\n
\n<\/div>\n

Why Choose Device-Grade hBN Single Crystal?<\/h2>\n
    \n
  • High-purity single-crystal material<\/li>\n
  • Large usable crystal domains<\/li>\n
  • Excellent electrical insulation<\/li>\n
  • Outstanding optical properties<\/li>\n
  • Proven performance in graphene devices<\/li>\n
  • Suitable for advanced research and prototype development<\/li>\n
  • Reliable packaging and handling<\/li>\n
  • Available for customized selection<\/li>\n<\/ul>\n

    \"Device-Grade<\/p>\n

    \n
    \n<\/div>\n

    Packaging Information<\/h2>\n

    Device-Grade hBN Single Crystals are carefully packaged in protective chip carriers to prevent contamination and mechanical damage during transportation and storage.<\/p>\n

    Customized packaging and crystal selection services are available according to customer requirements.<\/p>\n

    \n
    \n<\/div>\n

    \u5e38\u898b\u554f\u984c<\/h2>\n

    What is Device-Grade hBN?<\/h3>\n

    Device-grade hBN is a high-quality single-crystal form of hexagonal boron nitride specifically developed for advanced electronic, photonic, and quantum device applications.<\/p>\n

    Why is hBN important for graphene research?<\/h3>\n

    Its atomically smooth and electrically insulating surface enables graphene devices to achieve significantly improved carrier mobility and overall performance.<\/p>\n

    Can hBN be used as a substrate material?<\/h3>\n

    Yes. hBN is one of the most widely used substrate materials for graphene, two-dimensional materials, and van der Waals heterostructures.<\/p>\n

    What crystal size is available?<\/h3>\n

    Standard crystals typically provide lateral dimensions greater than 1 mm. Custom crystal selection may be available upon request.<\/p>\n

    Is this material suitable for academic and industrial research?<\/h3>\n

    Yes. Device-grade hBN single crystals are widely used in universities, research institutes, semiconductor laboratories, and advanced technology development programs worldwide.<\/p>","protected":false},"excerpt":{"rendered":"

    Device-Grade hBN Single Crystal is a premium hexagonal boron nitride material developed for advanced semiconductor research, two-dimensional materials, graphene electronics, and next-generation photonic devices. Produced through a proprietary crystal growth process under atmospheric pressure, these high-quality hBN crystals exhibit excellent crystallinity, low defect density, outstanding dielectric properties, and exceptional optical performance.<\/p>","protected":false},"featured_media":8969,"comment_status":"open","ping_status":"closed","template":"","meta":{"_acf_changed":false,"_uag_custom_page_level_css":""},"product_brand":[],"product_cat":[1088,1632],"product_tag":[2552,2564,2557,2545,2559,2561,2551,2550,2548,2562,2546,2549,2547,2567,2566,2556,2569,2568,2554,2555,2563,2560,2565,2553,2558],"class_list":{"0":"post-8968","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-ceramic","7":"product_cat-other","8":"product_tag-2d-materials","9":"product_tag-advanced-materials","10":"product_tag-deep-uv-materials","11":"product_tag-device-grade-hbn","12":"product_tag-electronic-materials","13":"product_tag-graphene-electronics","14":"product_tag-graphene-encapsulation","15":"product_tag-graphene-substrate","16":"product_tag-hbn-crystal","17":"product_tag-hbn-for-graphene","18":"product_tag-hbn-single-crystal","19":"product_tag-hbn-substrate","20":"product_tag-hexagonal-boron-nitride","21":"product_tag-high-purity-hbn","22":"product_tag-layered-crystal-materials","23":"product_tag-nanophotonics","24":"product_tag-next-generation-semiconductor-materials","25":"product_tag-photonic-materials","26":"product_tag-quantum-devices","27":"product_tag-quantum-materials","28":"product_tag-research-grade-hbn","29":"product_tag-semiconductor-research-materials","30":"product_tag-single-crystal-boron-nitride","31":"product_tag-van-der-waals-materials","32":"product_tag-wide-bandgap-materials","34":"first","35":"instock","36":"shipping-taxable","37":"product-type-simple"},"acf":[],"uagb_featured_image_src":{"full":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/06\/Device-Grade-Hexagonal-Boron-Nitride-hBN-Single-Crystal-for-Advanced-2D-Electronics-and-Quantum-Materials-2-\u526f\u672c-\u526f\u672c.webp",1000,1000,false],"thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/06\/Device-Grade-Hexagonal-Boron-Nitride-hBN-Single-Crystal-for-Advanced-2D-Electronics-and-Quantum-Materials-2-\u526f\u672c-\u526f\u672c-150x150.webp",150,150,true],"medium":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/06\/Device-Grade-Hexagonal-Boron-Nitride-hBN-Single-Crystal-for-Advanced-2D-Electronics-and-Quantum-Materials-2-\u526f\u672c-\u526f\u672c-300x300.webp",300,300,true],"medium_large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/06\/Device-Grade-Hexagonal-Boron-Nitride-hBN-Single-Crystal-for-Advanced-2D-Electronics-and-Quantum-Materials-2-\u526f\u672c-\u526f\u672c-768x768.webp",768,768,true],"large":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/06\/Device-Grade-Hexagonal-Boron-Nitride-hBN-Single-Crystal-for-Advanced-2D-Electronics-and-Quantum-Materials-2-\u526f\u672c-\u526f\u672c.webp",800,800,false],"1536x1536":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/06\/Device-Grade-Hexagonal-Boron-Nitride-hBN-Single-Crystal-for-Advanced-2D-Electronics-and-Quantum-Materials-2-\u526f\u672c-\u526f\u672c.webp",1000,1000,false],"2048x2048":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/06\/Device-Grade-Hexagonal-Boron-Nitride-hBN-Single-Crystal-for-Advanced-2D-Electronics-and-Quantum-Materials-2-\u526f\u672c-\u526f\u672c.webp",1000,1000,false],"trp-custom-language-flag":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/06\/Device-Grade-Hexagonal-Boron-Nitride-hBN-Single-Crystal-for-Advanced-2D-Electronics-and-Quantum-Materials-2-\u526f\u672c-\u526f\u672c-12x12.webp",12,12,true],"woocommerce_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/06\/Device-Grade-Hexagonal-Boron-Nitride-hBN-Single-Crystal-for-Advanced-2D-Electronics-and-Quantum-Materials-2-\u526f\u672c-\u526f\u672c-300x300.webp",300,300,true],"woocommerce_single":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/06\/Device-Grade-Hexagonal-Boron-Nitride-hBN-Single-Crystal-for-Advanced-2D-Electronics-and-Quantum-Materials-2-\u526f\u672c-\u526f\u672c-600x600.webp",600,600,true],"woocommerce_gallery_thumbnail":["https:\/\/www.sic-wafers.com\/wp-content\/uploads\/2026\/06\/Device-Grade-Hexagonal-Boron-Nitride-hBN-Single-Crystal-for-Advanced-2D-Electronics-and-Quantum-Materials-2-\u526f\u672c-\u526f\u672c-100x100.webp",100,100,true]},"uagb_author_info":{"display_name":"lydia","author_link":"https:\/\/www.sic-wafers.com\/zh\/author\/"},"uagb_comment_info":0,"uagb_excerpt":"Device-Grade hBN Single Crystal is a premium hexagonal boron nitride material developed for advanced semiconductor research, two-dimensional materials, graphene electronics, and next-generation photonic devices. Produced through a proprietary crystal growth process under atmospheric pressure, these high-quality hBN crystals exhibit excellent crystallinity, low defect density, outstanding dielectric properties, and exceptional optical performance.","_links":{"self":[{"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/product\/8968","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/comments?post=8968"}],"version-history":[{"count":4,"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/product\/8968\/revisions"}],"predecessor-version":[{"id":8981,"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/product\/8968\/revisions\/8981"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/media\/8969"}],"wp:attachment":[{"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/media?parent=8968"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/product_brand?post=8968"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/product_cat?post=8968"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.sic-wafers.com\/zh\/wp-json\/wp\/v2\/product_tag?post=8968"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}