Popis
Product Description
Silicon carbide (SiC) is a cutting-edge semiconductor material known for its remarkable thermal conductivity, high chemical stability, and exceptional electrical properties. This 2-inch SiC substrate features a 6H-N type crystal structure with a thickness range of 0.33mm to 0.43mm, providing excellent performance for a wide array of high-power, high-frequency, and high-temperature applications.
The 6H-N type indicates a hexagonal crystal structure, with “N” representing the N-type semiconductor, typically achieved through nitrogen doping. These substrates are ideal for applications that demand high performance under extreme conditions, including power electronics, RF devices, sensors, and photonic devices.
With its superior thermal management, high mechanical strength, and ability to handle harsh environments, this substrate is suitable for industries such as electric vehicles, 5G communication, photovoltaic power generation, and aerospace.
Product Specifications
| Parametr | Specifikace |
|---|---|
| Materiál | Karbid křemíku (SiC) |
| Krystalová struktura | Hexagonal (6H) |
| Typ | N-Type (Nitrogen Doped) |
| Tloušťka | 0.33mm – 0.43mm |
| Průměr | 2 inches (50.8 mm) |
| Tvrdost (Mohs) | 9.2 |
| Tepelná vodivost | High (Superior to Silicon) |
| Mezera mezi pásmy | 3.3 eV |
| Breakdown Electric Field | Vysoká |
| Electron Mobility | Vysoká |
| Chemická stabilita | Excellent resistance to acids, alkalis, and radiation |
| Mechanická pevnost | High (Suitable for extreme environments) |
Klíčové vlastnosti
Tvrdost: Mohs hardness of ~9.2, ensuring resistance to wear and mechanical stress.
Krystalová struktura: Hexagonal (6H) lattice structure for enhanced material strength.
Vysoká tepelná vodivost: Excellent heat dissipation properties, ideal for power electronic devices.
Wide Band Gap: 3.3eV band gap, supporting high-temperature and high-frequency applications.
Breakdown Electric Field: High breakdown voltage and electron mobility, suitable for high-efficiency power devices like MOSFETs and IGBTs.
Chemical & Radiation Resistance: Outstanding resistance to acids, alkalis, and radiation, making it suitable for harsh environments.
Vysoká mechanická pevnost: Superior strength under high-temperature and high-pressure conditions.
Aplikace
Výkonová elektronika: Essential for high-efficiency power devices like MOSFETs, IGBTs, used in power conversion, electric vehicles, and industrial equipment.
RF Devices: Ideal for use in high-frequency amplifiers, RF power amplifiers, and communication equipment.
Photoelectric Devices: Used in LED production, especially for blue and ultraviolet light applications.
Sensors: Perfect for high-temperature sensors, particularly in extreme environments like aerospace and defense.
Military & Aerospace: Highly suited for use in high-strength, high-temperature applications in extreme environments.
Applications in Key Industries
New Energy Vehicles: Reduces power loss and increases driving range, contributing to vehicle lightweighting.
5G Communication: Enables efficient high-frequency power amplification for 5G infrastructure.
Photovoltaic Power Generation: Enhances efficiency in solar power conversion.
Rail Transit: Ideal for use in systems that require high thermal and mechanical performance.
Možnosti přizpůsobení
Tloušťka: Available in custom thicknesses based on customer specifications.
Polishing & Surface Treatments: Options for varied surface roughness and double-sided polishing.
Doping Options: Supports different doping methods (e.g., nitrogen doping) to tailor electrical properties.
Lead Time: Standard delivery time is 2-4 weeks based on customization.
Packaging & Shipping
Packaging: Anti-static and anti-seismic foam packaging to ensure substrate protection during transit.
Shipping: Various shipping options available, with tracking numbers provided for real-time logistics monitoring.
Technical Support: Ongoing technical support and consulting services to assist with any issues during usage.
Recenze
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