ニュース
300mmウェーハの課題：大口径結晶成長の技術的ハードル（EFG vs. PVT）
Silicon carbide (SiC) has emerged as a cornerstone material for high-power electronics, electric vehicles, and next-generation semiconductor devices due to its exceptional thermal conductivity, high
Silicon carbide (SiC) has emerged as a cornerstone material for high-power electronics, electric vehicles, and next-generation semiconductor devices due to its exceptional thermal conductivity, high
炭化ケイ素（SiC）パワーデバイスは、世界のパワーエレクトロニクス市場で急速にシェアを拡大している。従来のシリコンの物理的性能限界を超えることで
Silicon carbide (SiC) wafers, a core substrate for third-generation semiconductors, are rapidly becoming essential in high-performance power electronics and next-generation devices. Thanks to their superior
In modern industrial, automotive, and aerospace applications, the demand for sensors capable of operating reliably in high-temperature environments is rapidly increasing. Conventional silicon (Si) sensors,
Wearable displays—ranging from smartwatches and augmented reality (AR) headsets to next-generation health-monitoring devices—are pushing materials science to its limits. These systems demand optical components that
炭化ケイ素（SiC）は、ニッチなワイドバンドギャップ材料から、次世代パワーエレクトロニクスの戦略的基盤へと急速に移行している。電気自動車への採用が加速する中,
Sapphire windows are widely used in high-pressure reactors, high-temperature optical observation systems, high-power laser equipment, and aerospace instrumentation due to their high hardness, excellent thermal
サファイアの光学窓は室温での透過率値で指定されることが多いが、実際の光学システムの多くは周囲条件からかけ離れたところで動作している。高温反応器、レーザー