P-Type 4H-SiC Substrates for Ultra-High-Voltage Power Devices: Resistivity, Aluminum Doping, Defect Control and SiC IGBT Applications
Most commercial silicon carbide power devices today are built on n-type 4H-SiC substrates. However, as SiC power electronics move toward ultra-high-voltage applications, particularly devices operating above several kilovolts, p-type 4H-SiC substrates are attracting increasing attention. One important example is the n-channel SiC insulated gate bipolar transistor, or SiC IGBT. Unlike conventional unipolar SiC MOSFETs, ultra-high-voltage […]