SiC Epi-Wafer Uniformity for High-Temperature Electronics: Epitaxy Thickness, Doping, Defects and 6-Inch Wafer-Level Qualification
Silicon carbide is increasingly being considered for electronic systems that must operate beyond the practical temperature limits of conventional silicon electronics. Applications such as aerospace sensing, jet engines, geothermal drilling, industrial furnaces and extreme-environment monitoring require semiconductor devices that can maintain stable electrical characteristics under severe thermal conditions. For these applications, however, high-temperature performance cannot […]