Laser Stealth Dicing of SiC Wafers: Subsurface Microcracks, Edge Chipping, Dicing Quality, Inspection and Yield Control
Silicon carbide wafers are increasingly used in high-power and high-temperature semiconductor devices, but they also present major challenges during singulation. Because SiC is extremely hard and brittle, conventional blade dicing can cause edge chipping, kerf loss, mechanical stress and tool wear. As device structures become smaller and wafer value increases, manufacturers are paying more attention […]