P-Type 4H-SiC Substrates for Ultra-High-Voltage Power Devices: Resistivity, Aluminum Doping, Defect Control and SiC IGBT Applications
Most commercial silicon carbide power devices today are built on n-type 4H-SiC substrates. However, as SiC power electronics move toward ultra-high-voltage applications, particularly devices operating above several kilovolts, p-type 4H-SiC substrates are attracting increasing attention. One important example is the n-channel SiC insulated gate bipolar transistor, or SiC IGBT. Unlike conventional unipolar SiC MOSFETs, ultra-high-voltage […]
8-Inch (200mm) SiC Epitaxial Wafers for 1200V MOSFETs: Epilayer Thickness, Doping Uniformity, BPD Control and Substrate Requirements
The transition from 150 mm to 200 mm silicon carbide wafers is moving from development programs toward practical device manufacturing. One of the most important applications is the 1200 V SiC MOSFET, widely used in electric vehicles, charging infrastructure, solar inverters, energy storage systems, industrial drives and high-efficiency power conversion. In September 2026, an 8-inch […]