SiC Epi-Wafer Uniformity for High-Temperature Electronics: Epitaxy Thickness, Doping, Defects and 6-Inch Wafer-Level Qualification
Silicon carbide is increasingly being considered for electronic systems that must operate beyond the practical temperature limits of conventional silicon electronics. Applications such as aerospace sensing, jet engines, geothermal drilling, industrial furnaces and extreme-environment monitoring require semiconductor devices that can maintain stable electrical characteristics under severe thermal conditions. For these applications, however, high-temperature performance cannot […]
8-Inch (200mm) SiC Epitaxial Wafers for 1200V MOSFETs: Epilayer Thickness, Doping Uniformity, BPD Control and Substrate Requirements
The transition from 150 mm to 200 mm silicon carbide wafers is moving from development programs toward practical device manufacturing. One of the most important applications is the 1200 V SiC MOSFET, widely used in electric vehicles, charging infrastructure, solar inverters, energy storage systems, industrial drives and high-efficiency power conversion. In September 2026, an 8-inch […]