説明
The High-Purity SiC Ceramic End Effector is designed for ultra-clean and high-precision wafer handling in semiconductor manufacturing. Made from ≥99% purity Silicon Carbide, it provides outstanding thermal stability, chemical resistance, mechanical strength, and ultra-low particle generation—making it ideal for harsh environments such as etching, deposition, diffusion, and high-temperature transfer systems.
Engineered with tight dimensional tolerances, this SiC ceramic end effector ensures smooth, stable, and contamination-free wafer transport for 4″, 6″, 8″, and 12″ wafer platforms. Customizable shapes, mounting interfaces, and surface finishes allow seamless integration with various robotic handling systems.
製品の特徴
High-purity SiC construction for exceptional hardness and rigidity
Withstands temperatures up to 1600°C for high-temperature processing
Excellent resistance to acids, bases, and plasma environments
Ultra-low particle generation for cleanroom operations
High mechanical strength with superior dimensional stability
Customizable shape, thickness, slots, and installation interface
Suitable for advanced robotic wafer-handling systems
Product Specifications
| パラメータ | 仕様 |
|---|---|
| 素材 | High-Purity Silicon Carbide (≥99%) |
| Available Wafer Sizes | Customizable for 4″, 6″, 8″, 12″ |
| 密度 | 3.21 g/cm³ |
| 表面仕上げ | Polished or matte |
| 厚さ | Customized per design |
| 抵抗率 | 0.1–60 Ω·cm |
| 機械的強度 | Flexural strength > 400 MPa |
| Thermal Resistance | Up to 1600°C |
| 耐薬品性 | Resistant to acids, bases, solvents, and plasma |
| Cleanroom Compatibility | Suitable for Class 1–100 environments |
| Custom Machining | Slots, mounting holes, vacuum channels available |
| パッケージング | Foam cushion + protective carton |
アプリケーション
Robotic wafer loading and unloading
High-temperature wafer transfer
Etching (RIE/DRIE), CVD/PVD, ALD process tools
Diffusion furnaces and oxidation systems
Wafer inspection, chip sorting, and IC packaging
Automated semiconductor manufacturing lines
よくあるご質問
1. Can the SiC ceramic end effector be customized for my robotic system?
Yes, we offer full customization including dimensions, mounting holes, vacuum grooves, thickness, and special shapes to match your equipment.
2. Is SiC suitable for high-temperature or plasma environments?
Absolutely. SiC withstands temperatures up to 1600°C and maintains excellent resistance to plasma, acids, and bases, making it ideal for harsh semiconductor process chambers.
3. Does the SiC end effector generate particles during operation?
SiC is extremely hard and wear-resistant. With a dense microstructure and polished surface, it produces very low particle generation—ideal for Class 1–100 cleanrooms.
レビュー
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