High-Purity SiC Ceramic End Effector for Precision Wafer Handling

The High-Purity SiC Ceramic End Effector is designed for ultra-clean and high-precision wafer handling in semiconductor manufacturing. Made from ≥99% purity Silicon Carbide, it provides outstanding thermal stability, chemical resistance, mechanical strength, and ultra-low particle generation—making it ideal for harsh environments such as etching, deposition, diffusion, and high-temperature transfer systems.

描述

The High-Purity SiC Ceramic End Effector is designed for ultra-clean and high-precision wafer handling in semiconductor manufacturing. Made from ≥99% purity Silicon Carbide, it provides outstanding thermal stability, chemical resistance, mechanical strength, and ultra-low particle generation—making it ideal for harsh environments such as etching, deposition, diffusion, and high-temperature transfer systems.

Engineered with tight dimensional tolerances, this SiC ceramic end effector ensures smooth, stable, and contamination-free wafer transport for 4″, 6″, 8″, and 12″ wafer platforms. Customizable shapes, mounting interfaces, and surface finishes allow seamless integration with various robotic handling systems.

คุณสมบัติของสินค้า

  • High-purity SiC construction for exceptional hardness and rigidity

  • Withstands temperatures up to 1600°C for high-temperature processing

  • Excellent resistance to acids, bases, and plasma environments

  • Ultra-low particle generation for cleanroom operations

  • High mechanical strength with superior dimensional stability

  • Customizable shape, thickness, slots, and installation interface

  • Suitable for advanced robotic wafer-handling systems

ข้อมูลจำเพาะของสินค้า

พารามิเตอร์ข้อกำหนด
วัสดุHigh-Purity Silicon Carbide (≥99%)
Available Wafer SizesCustomizable for 4″, 6″, 8″, 12″
ความหนาแน่น3.21 g/cm³
ผิวสำเร็จPolished or matte
ความหนาCustomized per design
ค่าความต้านทานไฟฟ้า0.1–60 Ω·cm
ความแข็งแรงเชิงกลFlexural strength > 400 MPa
Thermal ResistanceUp to 1600°C
ความต้านทานต่อสารเคมีResistant to acids, bases, solvents, and plasma
Cleanroom CompatibilitySuitable for Class 1–100 environments
Custom MachiningSlots, mounting holes, vacuum channels available
บรรจุภัณฑ์Foam cushion + protective carton

การประยุกต์ใช้

  • Robotic wafer loading and unloading

  • High-temperature wafer transfer

  • Etching (RIE/DRIE), CVD/PVD, ALD process tools

  • Diffusion furnaces and oxidation systems

  • Wafer inspection, chip sorting, and IC packaging

  • Automated semiconductor manufacturing lines

คำถามที่พบบ่อย

1. Can the SiC ceramic end effector be customized for my robotic system?
Yes, we offer full customization including dimensions, mounting holes, vacuum grooves, thickness, and special shapes to match your equipment.

2. Is SiC suitable for high-temperature or plasma environments?
Absolutely. SiC withstands temperatures up to 1600°C and maintains excellent resistance to plasma, acids, and bases, making it ideal for harsh semiconductor process chambers.

3. Does the SiC end effector generate particles during operation?
SiC is extremely hard and wear-resistant. With a dense microstructure and polished surface, it produces very low particle generation—ideal for Class 1–100 cleanrooms.

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