첨단 반도체 및 극한 환경 애플리케이션을 위한 대면적 정사각형 사파이어 기판

설명

The 310 × 310 × 1 mm Large-Area Square Sapphire Substrate is a precision-engineered sapphire plate produced from high-purity single-crystal aluminum oxide (Al₂O₃). Designed for applications that exceed the dimensional limits of conventional sapphire wafers, this ultra-large substrate provides excellent flatness, thermal endurance, and mechanical integrity across a square geometry.

This product is not a standard semiconductor wafer. Instead, it is optimized as a functional sapphire substrate or carrier plate for semiconductor processing, optical systems, and aerospace environments where large surface area, dimensional stability, and resistance to extreme conditions are required.

Typical Use Cases

• Carrier and support substrates for semiconductor processing

• GaN-on-Sapphire epitaxial carrier plates

• Large-area optical and laser windows

• High-temperature or vacuum viewports

• Structural sapphire base plates

• Research and custom industrial platforms

기술 사양

Performance Advantages

Large-Area Dimensional Stability

Maintains high flatness and tight thickness control across a 310 mm square surface, enabling reliable use in large-format systems.

높은 기계적 강도

The intrinsic hardness and strength of sapphire reduce the risk of surface damage and deformation during handling and operation.

Thermal Endurance

Capable of sustaining high-temperature cycles typical of epitaxial growth, thermal processing, and aerospace environments.

Optical-Grade Surface Finish

Sub-nanometer surface roughness enables use in optical transmission, bonding, and precision alignment applications.

화학적 불활성

Superior resistance to corrosive gases, acids, and alkalis compared with glass or fused quartz substrates.

Manufacturing & Inspection

• Synthetic sapphire crystal growth

• Precision cutting and stress-relief processing

• Large-format double-side polishing

• Interferometric flatness measurement

• Full dimensional and visual inspection prior to shipment

Frequently Asked Questions

Q1: How should this product be classified?
This product is classified as a large-area sapphire substrate or carrier plate, not a standard semiconductor wafer.

Q2: Are other sizes or thicknesses available?
Yes. Custom square or rectangular dimensions from 250 mm to 310 mm per side and various thicknesses are available upon request.

Q3: Is this suitable for GaN epitaxial processing?
Yes. It is commonly used as a GaN-on-Sapphire carrier substrate in MOCVD and related epitaxial systems.

Q4: How is surface flatness verified?
Each substrate is measured using laser interferometry to ensure λ/10 flatness at 633 nm.

Q5: How is the substrate protected during shipping?
Products are packed in custom shock-absorbing, clean-grade packaging designed specifically for ultra-large sapphire components.