Beschrijving
Industrial-grade 6H-N Silicon Carbide (SiC) substrates are high-quality single-crystal wafers engineered for high-temperature, UV optoelectronic, en precision industrial electronic applications.
Compared with the widely used 4H SiC polytype, 6H SiC features excellent thermal stability, mechanical hardness, and cost advantages, making it ideal for UV LEDs, high-temperature sensors, aerospace electronics, and industrial-grade power components.
Belangrijkste kenmerken
6H Hexagonal Crystal Structure
Offers dimensional stability, mechanical strength, and reliable performance under high thermal stress.N-Type Conductivity
Suitable for high-temperature electronics, UV devices, and specialized power circuits.High Thermal Conductivity (≈390–450 W/m·K)
Ensures efficient heat removal and enhances device lifetime.Superior Mechanical & Chemical Durability
High hardness, corrosion resistance, and robustness during processing.Epi-Ready Surface Options
CMP, DSP, and SSP finishes available for epitaxial growth and R&D.Customizable Sizes & Thickness
Standard diameters and square formats available for flexible integration.
Toepassingen
High-temperature semiconductor devices and industrial sensors
UV LEDs, UV detectors, and optoelectronic modules
Aerospace and automotive electronics exposed to extreme conditions
Compact, robust industrial power devices
R&D and pilot-scale production in wide-bandgap semiconductors
Technical Specifications (Typical & Customizable)
| Parameter | Specificatie |
|---|---|
| Materiaal | Single-Crystal 6H-N SiC |
| Kristalstructuur | Hexagonal (6H) |
| Diameter / Size | 25 mm, 50 mm, 100 mm, 150 mm, 200 mm, 300 mm; square or custom |
| Dikte | 350–1,000 µm (customizable) |
| Afwerking oppervlak | CMP epi-ready, DSP, SSP |
| Total Thickness Variation (TTV) | ≤5 µm typical |
| Bow / Warp | ≤40 µm (6″ typical) |
| Micropipe Dichtheid | <0.1 cm⁻² (premium <0.01 cm⁻²) |
| Dislocatiedichtheid | <10⁴ cm⁻² |
| Conductivity | N-type (conductive), SI optional |
| Epi-Ready | Yes — supports epitaxial growth |
Square Substrate Advantages
Enhanced electrode alignment for UV LEDs en hoge temperatuur sensoren
Improved device integration for industrial control circuits
Semi-insulating option enables RF and microwave low-loss performance
Manufacturing Process
High-purity SiC powder synthesis
Seed attachment and 6H polytype configuration
Sublimation crystal growth at 2300–2500°C
Diamond wire sawing into wafers
CMP or diamond polishing to achieve epi-ready surfaces
Optical inspection and CoA certification
Key Use Cases
High-temperature and high-voltage electronics
UV optoelectronic modules
Aerospace and defense systems
Industrial power solutions for harsh environments
Laboratory research and pilot device development
FAQ
1. What differentiates 6H-N SiC from 4H SiC?
6H-N SiC has slightly lower electron mobility but superior thermal stability and cost advantages for UV and high-temperature applications, while 4H SiC is optimized for fast, high-efficiency power devices.
2. Can 6H-N SiC operate under extreme temperatures?
Yes. It maintains structural and electrical stability at very high temperatures.
3. Are sizes and finishes customizable?
Absolutely — diameter, thickness, surface finish, and conductivity are fully customizable for R&D or mass production.
4. Which industries commonly use 6H-N SiC substrates?
UV optoelectronics, high-temperature sensors, aerospace, automotive electronics, and industrial-grade power modules.
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