설명

그리고 Silicon Carbide (SiC) Rectangle Substrate is a high-performance single-crystal semiconductor material designed for next-generation electronic and photonic devices. With its wide bandgap, excellent thermal conductivity, superior chemical resistance, and high mechanical strength, SiC is widely regarded as one of the most advanced substrate materials for high-power, high-temperature, and high-frequency applications.

This rectangular SiC substrate offers flexible dimension customization, making it ideal for device R&D, prototype fabrication, optical components, epitaxy growth, and high-reliability industrial systems.

Key Features & Advantages

1. Wide Bandgap Semiconductor

• Bandgap of ~3.2–3.3 eV, significantly higher than silicon

• Supports high breakdown voltage and ultra-efficient switching performance

2. Excellent Thermal Conductivity

• 3.0–4.9 W/cm·K, ensuring efficient heat dissipation

• Suitable for high-density power modules and RF devices

3. High Mechanical Strength

• Mohs hardness ~9.2, almost as hard as diamond

• Resistant to wear during wire-sawing, CMP, and device process steps

4. High-Temperature Stability

• Maintains electrical and structural integrity above 600°C

• Ideal for aerospace, automotive, and extreme-environment electronics

5. Customizable Dimensions & Doping

• Various rectangle sizes available

• N-type, P-type, semi-insulating options

• Surface finish available in single / double polished, epi-ready

Manufacturing Process (PVT Growth)

1. Raw Material Loading
   Ultra-high-purity SiC powders are placed inside a graphite crucible.

2. Crystal Growth (>2000°C)
   Using Physical Vapor Transport (PVT), SiC sublimates and recondenses on a seed crystal.

3. Ingot Processing
   The crystal boule is ground and oriented (C-plane, 0° or 4° off-axis).

4. High-Precision Slicing
   Diamond wire saws cut the crystal into rectangle plates or wafers.

5. Lapping & Grinding
   Ensures flatness, uniform thickness, and removes slicing marks.

6. 화학적 기계적 연마(CMP)
   Produces a mirror-grade surface suitable for epitaxial deposition.

7. Optional Doping
   Nitrogen (N-type), Aluminum/Boron (P-type), or SI/HPSI for RF & detector applications.

8. 품질 검사
   Micropipe density, warp, bow, Ra value, and TTV are fully tested.

애플리케이션

전력 전자

• SiC MOSFET

• Schottky barrier diodes (SBD)

• EV traction inverters

• High-voltage rectifiers

RF & Microwave Devices

• Radar transmitters

• 5G base station modules

• Satellite communication systems

Optoelectronics

• UV lasers

• UV photodetectors

• High-power LED substrates

Extreme-Environment Electronics

• Aerospace & defense

• 고온 센서

• High-radiation equipment

R&D and Prototype Development

• Material characterization

• Epitaxial testing

• Device structure optimization

기술 사양

1. General Specifications

2. Physical & Electrical Properties

3. Surface & Quality Parameters

4. Customization Options

자주 묻는 질문

Q1: Can the rectangle substrate be made in any size?
Yes. Fully customizable rectangular dimensions are available based on your design.

Q2: Do you provide epitaxy services?
We offer epi-ready polishing, and epitaxial layers can be added upon request.

Q3: What’s the typical lead time?
Standard production lead time is about 30 days.

Q4: Is research-grade and device-grade quality available?
Yes. Both grades are produced according to customer requirements.

Packaging & Delivery

• 포장: Custom anti-static boxes, vacuum-sealed or nitrogen-filled

• Shipping: Protective cushioning for safe transport

• Lead Time: 2-4 weeks

• Supply Capability: Flexible based on order volume