描述
The Silicon Carbide (SiC) Rectangle Substrate is a high-performance single-crystal semiconductor material designed for next-generation electronic and photonic devices. With its wide bandgap, excellent thermal conductivity, superior chemical resistance, and high mechanical strength, SiC is widely regarded as one of the most advanced substrate materials for high-power, high-temperature, and high-frequency applications.
This rectangular SiC substrate offers flexible dimension customization, making it ideal for device R&D, prototype fabrication, optical components, epitaxy growth, and high-reliability industrial systems.
คุณสมบัติเด่นและข้อได้เปรียบ
1. Wide Bandgap Semiconductor
Bandgap of ~3.2–3.3 eV, significantly higher than silicon
Supports high breakdown voltage and ultra-efficient switching performance
2. Excellent Thermal Conductivity
3.0–4.9 W/cm·K, ensuring efficient heat dissipation
Suitable for high-density power modules and RF devices
3. High Mechanical Strength
Mohs hardness ~9.2, almost as hard as diamond
Resistant to wear during wire-sawing, CMP, and device process steps
4. High-Temperature Stability
Maintains electrical and structural integrity above 600°C
Ideal for aerospace, automotive, and extreme-environment electronics
5. Customizable Dimensions & Doping
Various rectangle sizes available
N-type, P-type, semi-insulating options
Surface finish available in single / double polished, epi-ready
Manufacturing Process (PVT Growth)
Raw Material Loading
Ultra-high-purity SiC powders are placed inside a graphite crucible.Crystal Growth (>2000°C)
Using Physical Vapor Transport (PVT), SiC sublimates and recondenses on a seed crystal.Ingot Processing
The crystal boule is ground and oriented (C-plane, 0° or 4° off-axis).High-Precision Slicing
Diamond wire saws cut the crystal into rectangle plates or wafers.Lapping & Grinding
Ensures flatness, uniform thickness, and removes slicing marks.การขัดเงาทางเคมีเชิงกล (CMP)
Produces a mirror-grade surface suitable for epitaxial deposition.Optional Doping
Nitrogen (N-type), Aluminum/Boron (P-type), or SI/HPSI for RF & detector applications.การตรวจสอบคุณภาพ
Micropipe density, warp, bow, Ra value, and TTV are fully tested.
การประยุกต์ใช้
อิเล็กทรอนิกส์กำลัง
เซมิคอนดักเตอร์ไอซิค (SiC MOSFETs)
Schottky barrier diodes (SBD)
EV traction inverters
High-voltage rectifiers
RF & Microwave Devices
Radar transmitters
5G base station modules
Satellite communication systems
Optoelectronics
UV lasers
UV photodetectors
High-power LED substrates
Extreme-Environment Electronics
Aerospace & defense
เซ็นเซอร์อุณหภูมิสูง
High-radiation equipment
R&D and Prototype Development
Material characterization
Epitaxial testing
Device structure optimization
ข้อมูลจำเพาะทางเทคนิค
1. General Specifications
| รายการ | ข้อกำหนด |
|---|---|
| วัสดุ | Single-crystal Silicon Carbide (SiC) |
| Shape | Rectangle substrate / plate |
| Available Polytypes | 4H-SiC, 6H-SiC |
| การปฐมนิเทศ | C-plane (0001), Off-axis 0° / 4° |
| ความหนา | 330–500 μm (customizable) |
| ผิวสำเร็จ | SSP / DSP / Epi-ready polished |
| Doping | N-type, P-type, Semi-insulating HPSI |
| ความหนาแน่นของข้อบกพร่อง | < 0.5 cm⁻² (4H standard), optional lower |
| เกรด | Research-grade / device-grade |
2. Physical & Electrical Properties
| ทรัพย์สิน | 4H-ซิลิคอนคาร์ไบด์ | 6H-ซิก |
|---|---|---|
| แบนด์แกป | ~3.26 eV | ~3.02 eV |
| การนำความร้อน | 4.9 W/cm·K | 4.9 W/cm·K |
| ความหนาแน่น | 3.21 g/cm³ | 3.21 g/cm³ |
| Breakdown Electric Field | 2.2–2.8 MV/cm | 2.2–2.8 MV/cm |
| Electron Mobility | ~800 cm²/V·s | ~400 cm²/V·s |
| ความแข็งโมห์ส | ~9.2 | ~9.2 |
| ค่าคงที่ไดอิเล็กทริก | 9.6 | 9.66 |
3. Surface & Quality Parameters
| พารามิเตอร์ | ค่าทั่วไป |
|---|---|
| ความหยาบผิว (Ra) | ≤ 0.2 nm (polished) |
| ทีวี | < 5 μm |
| Bow | < 10 μm |
| Warp | < 15 μm |
| Particle Level | < 15 @ ≥0.3 μm |
| ความเรียบ | λ/10 @ 632.8 nm (optional) |
4. Customization Options
| Customizable Item | Options |
|---|---|
| Dimensions | Any rectangular size available |
| ความหนา | 0.33–0.50 mm standard; others on request |
| Polytype | 4H-SiC / 6H-SiC |
| การปฐมนิเทศ | 0° or 4° off-axis |
| การขัดเงา | SSP / DSP / Epi-ready |
| Doping | N-type, P-type, SI / HPSI |
| Edge Shape | Square edge / chamfered edge |
คำถามที่พบบ่อย
Q1: Can the rectangle substrate be made in any size?
Yes. Fully customizable rectangular dimensions are available based on your design.
Q2: Do you provide epitaxy services?
We offer epi-ready polishing, and epitaxial layers can be added upon request.
Q3: What’s the typical lead time?
Standard production lead time is about 30 days.
Q4: Is research-grade and device-grade quality available?
Yes. Both grades are produced according to customer requirements.
Packaging & Delivery
Packaging: Custom anti-static boxes, vacuum-sealed or nitrogen-filled
Shipping: Protective cushioning for safe transport
Lead Time: 2-4 weeks
Supply Capability: Flexible based on order volume
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